博士（工学）, 信州大学

Applied physical properties, Applied materials

Crystal engineering, Crystal engineering

2021
信州大学工学部電子情報システム工学科　教授

2011 - 2021
信州大学工学部　准教授

2009 - 2011
信州大学カーボン科学研究所　助教

2006 - 2009
東北大学金属材料研究所　助教

2004 - 2006
信州大学教育学部産学官連携研究員

2001 - 2004
日本学術振興会特別研究員（PD）

1998, 長岡技術科学大学, 工学研究科, 生物機能工学専攻

2001, 信州大学, 工学研究科, 材料工学専攻

2009
本多記念会 第49回原田研究奨励賞

2003
第33回日本結晶成長学会　論文賞

2002
第32回日本結晶成長学会　講演奨励賞

1999
平成11年度日本物理学会北陸支部応用物理学会北陸・信越支部合同講演会　講演奨励賞

Lithiation/Delithiation of Silicon Heavily Doped with Boron Synthesized Using the Czochralski Process
M. Shimizu, K. Kimoto, A. Kikuchi, T. Taishi, S. Arai
Energy Adv.,, 2, 813, Apr. 2023

Line-shaped defects in β-Ga2O3 crystals grown by the vertical Bridgman (VB) method
T. Taishi, N. Kobayashi, E. Ohba, K. Hoshikawa
Jpn. J. Appl. Phys., 62, SF1025, Mar. 2023

Polycrystalline SiC coating on large-sized SiC ceramics using Si vapor
Yuuki KAGAMI, Syuuichi YAMAMOTO, Yuta YOKOBAYASHI, Ryunosuke,UCHIDA, Koki SUZUKI, Seiichi TARUTA and Toshinori TAISHI
J. Ceram. Soc. Japan, 129(12), 1-7, Sep. 2021

Dopant Effect on Lithiation/Delithiation of Highly Crystalline Silicon Synthesized Using the Czochralski Process
M. Shimizu, K. Kimoto, T. Kawai, T. Taishi, S. Arai
Appl. Energy Matter., 4, 7922, Jul. 2021

Growth of (100), (010) and (001) b-Ga2O3 single crystals by vertical Bridgman method
E. Ohba, T. Kobayashi, T. Taishi, K. Hoshikawa
J. Cryst. Growth, 556, 125990, Feb. 2021

バルク結晶育成における融液中および結晶中の温度勾配測定
太子敏則
日本結晶成長学会誌, 47(2), 47-2-01, Jul. 2020

酸化物および化合物半導体バルク結晶成長における温度勾配
宇田聡, 川瀬智博, 太子敏則
日本結晶成長学会誌, 47(2), 47-2-05, Jul. 2020

Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth
K. Hyun, S.J. Kim, T. Taishi
Feb. 2020

Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth
K. Hyun, S.J. Kim, T. Taishi
Applied Surface Science, 513, 145798, Feb. 2020

The effect of Al addition to a Cr solvent without molten Si on the surface morphology in a solution growth of SiC
K. Suzuki, T. Taishi
Japanese Journal of Applied Physics, 59, 025504(1-6), Jan. 2020

Solution growth of SiC from the crucible bottom with dipping under unsaturation state of carbon in solvent
T. Taishi，M. Takahashi，N. Tsuchimoto，K. Suzuki, K. Hyun
Mater. Sci. Forum, 924, 51-54, Jun. 2018

Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M=Transition Metals) Solvents for the Solution Growth of SiC
K. Hyun, T. Taishi, K. Teshima
Mater. Sci. Forum, 924, 43-46, Jun. 2018

The effect of the structure of seed attachment on polytype and morphology in solution growth of SiC by TSSG method
K. Suzuki, K. Hyun, T. Taishi
Mater. Sci. Forum, 924, 35-38, Jun. 2018

垂直ブリッジマン法によるタンタル酸ニオブ酸カリウム（KTN）単結晶の育成と組成均一化
太子敏則、干川圭吾、小島孝広、笹浦正弘、小松貴幸
日本結晶成長学会誌, 43, 23-31, Oct. 2016

Anisotropy of ionic conduction in single-crystal LixLa(1%x)/3NbO3 solid electrolyte grown by directional solidification
Y. Fujiwara, T. Taishi, K. Hoshikawa, K. Kohama, H. Iba
Jpn. J. Appl. Phys., 55, 090306-1-090306-3, Sep. 2016

The Growth of Potassium Tantalate Niobate (KTaxNb1-xO3) Single Crystal by Vertical Bridgman Method
T. Taishi, K. Hosokawa, K. Hoshikawa, T. Kojima, J. Osada, M. Sasaura, Y. Furukawa, T. Komatsu
Additive Manufacturing and Strategic Technologies in Advanced Ceramics: Ceramic Transactions, 258, 105-112, Aug. 2016

Colony structure in Ce-doped Al2O3/YAG eutectic systems grown by vertical Bridgman technique
S. Yamada, M. Yoshimura, S. Sakata, T. Taishi, K. Hoshikawa
J. Cryst. Growth, 448, 1-5, Jul. 2016

Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor
Htay, MT; Mandokoro, T; Seki, H; Sakaizawa, T; Momose, N; Taishi, T; Hashimoto, Y; Ito, K
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 140, 312-319, Sep. 2015

The growth of Al2O3/YAG:Ce melt growth composite by the vertical Bridgman technique using an a-axis Al2O3 seed
Masafumi Yoshimura, Shin-ichi Sakata, Seiya Yamada, Toshinori Taishi, Keigo Hoshikawa
J. Cryst. Growth, 427, 16-20, 2015

Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals
T.Taishi, T.Kobayashi, M.Shinozuka, E.Ohba, C.Miyagawa, K.Hoshikawa
J. Cryst. Growth, 401, 388-391, 01 Sep. 2014

Vertical Bridgman growth of sapphire crystals, with thin-neck formation process
Hoshikawa, K; Taishi, T; Ohba, E; Miyagawa, C; Kobayashi, T; Yanagisawa, J; Shinozuka, M
Journal of Crystal Growth, 401, 146-149, Sep. 2014

Constitutional supercooling in heavily As-doped Czochralski Si crystal growth
T. Taishi, Y. Ohno, I. Yonenaga
J. Cryst. Growth, 393, 42-44, 01 May 2014

Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation
C. Miyagawa, T. Kobayashi, T. Taishi, K. Hoshikawa
J. Cryst. Growth, 402, 83-89, 2014

Growth of potassium tantalate (KTaO3) crystalsby directional solidification
Toshinori Taishi, Takayuki Takenaka,Kazuya Hosokawa,Noriko Bamba,Keigo Hoshikawa
J. Cryst. Growth, 380, 39-42, 01 Oct. 2013

Demonstration of crack-free c-axis sapphire crystal growth using the vertical Bridgman method
Chihiro Miyagawa, Takumi Kobayashi, Toshinori Taishi, Keigo Hoshikawa
J. Cryst. Growth, 372, 95-99, 2013

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3
T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa and I.Yonenaga
J. Cryst. Growth, 360, 47-51, 01 Dec. 2012

Growth and characterization of germanium crystals from B2O3-coverd melt
T. Taishi
2012 3CG Collaborative Conference on Crystal Growth, Dec. 2012

Fabrication of flower-shaped Bi(2)O(3) superstructure by a facile template-free process
Zhang, Li; Hashimoto, Yoshio; Taishi, Toshinori; Nakamura, Isao; Ni, Qing-Qing
Applied Surface Science, 257(15), 6577-6582, May 2011

Oxygen doped Ge crystals Czochralski-grown from the B2O3-fully-covered melt
T. Taishi, Y. Ohno, I. Yonenaga
Miroelectro. Eng., 88, 496-498, Feb. 2011, Refereed

Mild hydrothermal treatment to prepare highly dispersed multi-walled carbon nanotubes
Zhang, Li; Hashimoto, Yoshio; Taishi, Toshinori; Ni, Qing-Qing
Applied Surface Science, 257(6), 1845-1849, Jan. 2011

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities
T. Taishi, H. Ise, Y. Murao, T. Osawa, M. Suezawa, Y. Tokumoto, Y. Ohno, K. Hoshikawa and I. Yonenaga
J. Cryst. Growth, 312, 2783-2787, Jun. 2010, Refereed

Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth
T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga
Physica B, 404, 4612-4615, Dec. 2009, Refereed

Opto-TEM法によるZnO中の転位の光学応答解析
大野裕, 太子敏則, 徳本有紀, 米永一郎
まてりあ, 48, 625, Dec. 2009, Refereed

Generation and suppression of misfit dislocations at the seed/crystal interface in Si bulk crystal growth
T. Taishi, K. Hoshikawa, Y. Ohno and I. Yonenaga
Phys. Stat. Sol. (C), 6, 1886-1891, Jun. 2009, Refereed

Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt
T. Taishi, Y. Ohno, I. Yonenaga
J. Cryst Growth, 311, 4615-4618, Jun. 2009, Refereed

Single cyrystal growth of langataite (La3Ta0.5Ga5.5O14) by vertical Bridgman (VB) method along [21-1-0]in air and an Ar atmosphere
T. Taishi, N. Bamba, K. Hoshikawa and I. Yonenaga
J. Cryst Growth, 311, 205-208, Dec. 2008, Refereed

High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors
I. Yonenaga, H. Koizumi, Y. Ohno and T. Taishi
J. Appl. Phys., 103, 093502(1-4), May 2008, Refereed

無ネック無転位シリコン単結晶成長
干川圭吾, 太子敏則, 黄新明
日本結晶成長学会誌, 34, 17-22, Apr. 2008, Refereed

トモ・トポグラフィ技術を併用した放射光白色トポグラフィによる転位の3D構造決定
川戸清爾、太子敏則、飯田敏、近浦吉則、梶原堅太郎
まてりあ, 46, 823, Dec. 2007, Refereed

Si multicrystals grown by the Czochralski method with multi-seeds
T. Hoshikawa, T. Taishi, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa
J. Cryst. Growth, 307, 466-471, Jul. 2007, Refereed

Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime
T. Taishi, T. Hoshikawa, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa
J. Cryst. Growth, 306, 452-457, May 2007, Refereed

Single-crystal growth of langasite (La3Ga5SiO14) by the vertical Bridgman (VB) method in air and in an Ar atmosphere
T. Taishi, T. Hayashi, T. Fukami, K. Hoshikawa and I. Yonenaga
J. Cryst. Growth, 304, 4-6, Mar. 2007, Refereed

Segregation and constitutional supercooling in heavily doped silicon single crystal growth by Czochralski method
Toshinori Taishi
The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies,, 05 Jun. 2023, Invited

Solution growth of SiC　-Unique approach by vertical-Bridgman-like technique-
Toshinori Taishi
Third International Workshop on Advanced Functional Nanomaterials, Dec. 2015

Growth of potassium tantalate niobate (KTaxNb1-xO3: KTN) crystals by the vertical Bridgman (VB) method
Toshinori Taishi, Kazuya Hosokawa, Keigo Hoshikawa, Takahiro Kojima, Junya Osada, Masahiro Sasaura, Yasunori Furukawa, Takayuki Komatsu
11th International Conference on Ceramic Materials and Components for Energy and Environmental Applications, 2015

SiC溶液成長　～溶剤添加効果と炭素の溶解・輸送・成長のバランス～
太子敏則、日根賢人
応用物理学会第1回先進パワー半導体分科会, 20 Nov. 2014

液状酸化ホウ素（B2O3）を用いた無転位・酸素添加ゲルマニウム結晶の育成
太子敏則、米永一郎
まてりあ 50 10 431, May 2011

Czochralski germanium crystal growth with low dislocation density and oxygen impurities
T. Taishi
TheForum on the Science and Technology of Silicon Materials 2010, Nov. 2010

Mar. 1999
応用物理学会

Jul. 1999
日本結晶成長学会

Jul. 2002
応用物理学会シリコンテクノロジー分科会

Jul. 2001
応用物理学会結晶工学分科会

Apr. 2007
日本フラックス成長研究会

Oct. 2012
日本学術振興会第145委員会　幹事/運営委員

Apr. 2017
応用物理学会シリコンテクノロジー分科会　幹事

Apr. 2016
日本結晶成長学会　理事

Jan. 2018
日本学術振興会第161委員会　運営委員

Apr. 2019
応用物理学会先進パワー半導体分科会　幹事

Nov. 2018
The Forum on the Science and Technology of Silicon Materials 2024 Chair

Aug. 2019
International Workshop on Gallium Oxide and Related Materials 2021 Local Arrangement Committee Chair

CZシリコン結晶成長における組成的過冷却および転位挙動評価
2021 - 2025

Study on polycrystalline SiC coating
2019 - 2022

Crystal growth of beta-gallium oxide
2016 - 2025

Crystal growth of complete solid solution materials
2013 - 2018

Solution growth of silicon carbide
2012 - 2022

High quality germanium crystal growth
2006 - 2013

Oxide crystal growth by vertical Bridgman method
2003 - 2006

Czochralski growth of silicon crystals and evaluation of crystalline defects
1998 - 2003

無転位シリコン単結晶の製造方法, 特願2000-049667, Patent right

ランガサイト系単結晶の作製方法及び作製装置並びにその単結晶を用いた燃焼圧センサ, 特願2006-354972, Patent right

低転位密度ゲルマニウム単結晶の製造方法, 特願2009-109980, Patent right

リチウムイオン電池用負極材料, 特願2013-271074, Patent right

ろ過器およびその製造方法ならびにこれを用いた金属回収方法, 特願2015-046885, Patent right

SiC単結晶の製造方法, 特願2015-193699, Patent right

SiC単結晶の製造方法, 特願2017- 67147, Patent right