TAISHI Toshinori

Academic Assembly School of Science and Technology Institute of Engineering

Faculty of Engineering Electrical and Computer Engineering 

Professor 

Degree

  • 博士(工学), 信州大学

Research Keyword

    Crystal growth, Evaluation of crystalline defects, Silicon, Germanium, Oxide crystals

Field Of Study

  • Applied physical properties, Applied materials
  • Crystal engineering, Crystal engineering

Career

  • 2021
    信州大学工学部電子情報システム工学科 教授
  • 2011 - 2021
    信州大学工学部 准教授
  • 2009 - 2011
    信州大学カーボン科学研究所 助教
  • 2006 - 2009
    東北大学金属材料研究所 助教
  • 2004 - 2006
    信州大学教育学部産学官連携研究員
  • 2001 - 2004
    日本学術振興会特別研究員(PD)

Educational Background

  • 1998, 長岡技術科学大学, 工学研究科, 生物機能工学専攻
  • 2001, 信州大学, 工学研究科, 材料工学専攻

Award

  • 2009
    本多記念会 第49回原田研究奨励賞
  • 2003
    第33回日本結晶成長学会 論文賞
  • 2002
    第32回日本結晶成長学会 講演奨励賞
  • 1999
    平成11年度日本物理学会北陸支部応用物理学会北陸・信越支部合同講演会 講演奨励賞

Paper

  • Lithiation/Delithiation of Silicon Heavily Doped with Boron Synthesized Using the Czochralski Process
    M. Shimizu, K. Kimoto, A. Kikuchi, T. Taishi, S. Arai
    Energy Adv.,, 2, 813, Apr. 2023
  • Line-shaped defects in β-Ga2O3 crystals grown by the vertical Bridgman (VB) method
    T. Taishi, N. Kobayashi, E. Ohba, K. Hoshikawa
    Jpn. J. Appl. Phys., 62, SF1025, Mar. 2023
  • Polycrystalline SiC coating on large-sized SiC ceramics using Si vapor
    Yuuki KAGAMI, Syuuichi YAMAMOTO, Yuta YOKOBAYASHI, Ryunosuke,UCHIDA, Koki SUZUKI, Seiichi TARUTA and Toshinori TAISHI
    J. Ceram. Soc. Japan, 129(12), 1-7, Sep. 2021
  • Dopant Effect on Lithiation/Delithiation of Highly Crystalline Silicon Synthesized Using the Czochralski Process
    M. Shimizu, K. Kimoto, T. Kawai, T. Taishi, S. Arai
    Appl. Energy Matter., 4, 7922, Jul. 2021
  • Growth of (100), (010) and (001) b-Ga2O3 single crystals by vertical Bridgman method
    E. Ohba, T. Kobayashi, T. Taishi, K. Hoshikawa
    J. Cryst. Growth, 556, 125990, Feb. 2021
  • バルク結晶育成における融液中および結晶中の温度勾配測定
    太子敏則
    日本結晶成長学会誌, 47(2), 47-2-01, Jul. 2020
  • 酸化物および化合物半導体バルク結晶成長における温度勾配
    宇田聡, 川瀬智博, 太子敏則
    日本結晶成長学会誌, 47(2), 47-2-05, Jul. 2020
  • Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth
    K. Hyun, S.J. Kim, T. Taishi
    Feb. 2020
  • Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth
    K. Hyun, S.J. Kim, T. Taishi
    Applied Surface Science, 513, 145798, Feb. 2020
  • The effect of Al addition to a Cr solvent without molten Si on the surface morphology in a solution growth of SiC
    K. Suzuki, T. Taishi
    Japanese Journal of Applied Physics, 59, 025504(1-6), Jan. 2020
  • Solution growth of SiC from the crucible bottom with dipping under unsaturation state of carbon in solvent
    T. Taishi,M. Takahashi,N. Tsuchimoto,K. Suzuki, K. Hyun
    Mater. Sci. Forum, 924, 51-54, Jun. 2018
  • Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M=Transition Metals) Solvents for the Solution Growth of SiC
    K. Hyun, T. Taishi, K. Teshima
    Mater. Sci. Forum, 924, 43-46, Jun. 2018
  • The effect of the structure of seed attachment on polytype and morphology in solution growth of SiC by TSSG method
    K. Suzuki, K. Hyun, T. Taishi
    Mater. Sci. Forum, 924, 35-38, Jun. 2018
  • 垂直ブリッジマン法によるタンタル酸ニオブ酸カリウム(KTN)単結晶の育成と組成均一化
    太子敏則、干川圭吾、小島孝広、笹浦正弘、小松貴幸
    日本結晶成長学会誌, 43, 23-31, Oct. 2016
  • Anisotropy of ionic conduction in single-crystal LixLa(1%x)/3NbO3 solid electrolyte grown by directional solidification
    Y. Fujiwara, T. Taishi, K. Hoshikawa, K. Kohama, H. Iba
    Jpn. J. Appl. Phys., 55, 090306-1-090306-3, Sep. 2016
  • The Growth of Potassium Tantalate Niobate (KTaxNb1-xO3) Single Crystal by Vertical Bridgman Method
    T. Taishi, K. Hosokawa, K. Hoshikawa, T. Kojima, J. Osada, M. Sasaura, Y. Furukawa, T. Komatsu
    Additive Manufacturing and Strategic Technologies in Advanced Ceramics: Ceramic Transactions, 258, 105-112, Aug. 2016
  • Colony structure in Ce-doped Al2O3/YAG eutectic systems grown by vertical Bridgman technique
    S. Yamada, M. Yoshimura, S. Sakata, T. Taishi, K. Hoshikawa
    J. Cryst. Growth, 448, 1-5, Jul. 2016
  • Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor
    Htay, MT; Mandokoro, T; Seki, H; Sakaizawa, T; Momose, N; Taishi, T; Hashimoto, Y; Ito, K
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 140, 312-319, Sep. 2015WebofScienceリポジトリ電子ジャーナル
  • The growth of Al2O3/YAG:Ce melt growth composite by the vertical Bridgman technique using an a-axis Al2O3 seed
    Masafumi Yoshimura, Shin-ichi Sakata, Seiya Yamada, Toshinori Taishi, Keigo Hoshikawa
    J. Cryst. Growth, 427, 16-20, 2015
  • Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals
    T.Taishi, T.Kobayashi, M.Shinozuka, E.Ohba, C.Miyagawa, K.Hoshikawa
    J. Cryst. Growth, 401, 388-391, 01 Sep. 2014WebofScienceリポジトリ電子ジャーナル
  • Vertical Bridgman growth of sapphire crystals, with thin-neck formation process
    Hoshikawa, K; Taishi, T; Ohba, E; Miyagawa, C; Kobayashi, T; Yanagisawa, J; Shinozuka, M
    Journal of Crystal Growth, 401, 146-149, Sep. 2014WebofScienceリポジトリ電子ジャーナル
  • Constitutional supercooling in heavily As-doped Czochralski Si crystal growth
    T. Taishi, Y. Ohno, I. Yonenaga
    J. Cryst. Growth, 393, 42-44, 01 May 2014WebofScienceリポジトリ電子ジャーナル
  • Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation
    C. Miyagawa, T. Kobayashi, T. Taishi, K. Hoshikawa
    J. Cryst. Growth, 402, 83-89, 2014
  • Growth of potassium tantalate (KTaO3) crystalsby directional solidification
    Toshinori Taishi, Takayuki Takenaka,Kazuya Hosokawa,Noriko Bamba,Keigo Hoshikawa
    J. Cryst. Growth, 380, 39-42, 01 Oct. 2013WebofScienceリポジトリ電子ジャーナル
  • Demonstration of crack-free c-axis sapphire crystal growth using the vertical Bridgman method
    Chihiro Miyagawa, Takumi Kobayashi, Toshinori Taishi, Keigo Hoshikawa
    J. Cryst. Growth, 372, 95-99, 2013
  • Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3
    T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa and I.Yonenaga
    J. Cryst. Growth, 360, 47-51, 01 Dec. 2012WebofScienceリポジトリ電子ジャーナル
  • Growth and characterization of germanium crystals from B2O3-coverd melt
    T. Taishi
    2012 3CG Collaborative Conference on Crystal Growth, Dec. 2012
  • Fabrication of flower-shaped Bi(2)O(3) superstructure by a facile template-free process
    Zhang, Li; Hashimoto, Yoshio; Taishi, Toshinori; Nakamura, Isao; Ni, Qing-Qing
    Applied Surface Science, 257(15), 6577-6582, May 2011WebofScienceリポジトリ電子ジャーナル
  • Oxygen doped Ge crystals Czochralski-grown from the B2O3-fully-covered melt
    T. Taishi, Y. Ohno, I. Yonenaga
    Miroelectro. Eng., 88, 496-498, Feb. 2011, Refereed
  • Mild hydrothermal treatment to prepare highly dispersed multi-walled carbon nanotubes
    Zhang, Li; Hashimoto, Yoshio; Taishi, Toshinori; Ni, Qing-Qing
    Applied Surface Science, 257(6), 1845-1849, Jan. 2011WebofScienceリポジトリ電子ジャーナル
  • Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities
    T. Taishi, H. Ise, Y. Murao, T. Osawa, M. Suezawa, Y. Tokumoto, Y. Ohno, K. Hoshikawa and I. Yonenaga
    J. Cryst. Growth, 312, 2783-2787, Jun. 2010, RefereedWebofScienceリポジトリ電子ジャーナル
  • Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth
    T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga
    Physica B, 404, 4612-4615, Dec. 2009, Refereed
  • Opto-TEM法によるZnO中の転位の光学応答解析
    大野裕, 太子敏則, 徳本有紀, 米永一郎
    まてりあ, 48, 625, Dec. 2009, Refereed
  • Generation and suppression of misfit dislocations at the seed/crystal interface in Si bulk crystal growth
    T. Taishi, K. Hoshikawa, Y. Ohno and I. Yonenaga
    Phys. Stat. Sol. (C), 6, 1886-1891, Jun. 2009, Refereed
  • Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt
    T. Taishi, Y. Ohno, I. Yonenaga
    J. Cryst Growth, 311, 4615-4618, Jun. 2009, Refereed
  • Single cyrystal growth of langataite (La3Ta0.5Ga5.5O14) by vertical Bridgman (VB) method along [21-1-0]in air and an Ar atmosphere
    T. Taishi, N. Bamba, K. Hoshikawa and I. Yonenaga
    J. Cryst Growth, 311, 205-208, Dec. 2008, Refereed
  • High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors
    I. Yonenaga, H. Koizumi, Y. Ohno and T. Taishi
    J. Appl. Phys., 103, 093502(1-4), May 2008, Refereed
  • 無ネック無転位シリコン単結晶成長
    干川圭吾, 太子敏則, 黄新明
    日本結晶成長学会誌, 34, 17-22, Apr. 2008, Refereed
  • トモ・トポグラフィ技術を併用した放射光白色トポグラフィによる転位の3D構造決定
    川戸清爾、太子敏則、飯田敏、近浦吉則、梶原堅太郎
    まてりあ, 46, 823, Dec. 2007, Refereed
  • Si multicrystals grown by the Czochralski method with multi-seeds
    T. Hoshikawa, T. Taishi, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa
    J. Cryst. Growth, 307, 466-471, Jul. 2007, Refereed
  • Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime
    T. Taishi, T. Hoshikawa, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa
    J. Cryst. Growth, 306, 452-457, May 2007, Refereed
  • Single-crystal growth of langasite (La3Ga5SiO14) by the vertical Bridgman (VB) method in air and in an Ar atmosphere
    T. Taishi, T. Hayashi, T. Fukami, K. Hoshikawa and I. Yonenaga
    J. Cryst. Growth, 304, 4-6, Mar. 2007, Refereed

Lectures, oral presentations, etc.

  • Segregation and constitutional supercooling in heavily doped silicon single crystal growth by Czochralski method
    Toshinori Taishi
    The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies,, 05 Jun. 2023, Invited
  • Solution growth of SiC -Unique approach by vertical-Bridgman-like technique-
    Toshinori Taishi
    Third International Workshop on Advanced Functional Nanomaterials, Dec. 2015
  • Growth of potassium tantalate niobate (KTaxNb1-xO3: KTN) crystals by the vertical Bridgman (VB) method
    Toshinori Taishi, Kazuya Hosokawa, Keigo Hoshikawa, Takahiro Kojima, Junya Osada, Masahiro Sasaura, Yasunori Furukawa, Takayuki Komatsu
    11th International Conference on Ceramic Materials and Components for Energy and Environmental Applications, 2015
  • SiC溶液成長 ~溶剤添加効果と炭素の溶解・輸送・成長のバランス~
    太子敏則、日根賢人
    応用物理学会第1回先進パワー半導体分科会, 20 Nov. 2014
  • 液状酸化ホウ素(B2O3)を用いた無転位・酸素添加ゲルマニウム結晶の育成
    太子敏則、米永一郎
    まてりあ 50 10 431, May 2011
  • Czochralski germanium crystal growth with low dislocation density and oxygen impurities
    T. Taishi
    TheForum on the Science and Technology of Silicon Materials 2010, Nov. 2010

Affiliated academic society

  • Mar. 1999
    応用物理学会
  • Jul. 1999
    日本結晶成長学会
  • Jul. 2002
    応用物理学会シリコンテクノロジー分科会
  • Jul. 2001
    応用物理学会結晶工学分科会
  • Apr. 2007
    日本フラックス成長研究会
  • Oct. 2012
    日本学術振興会第145委員会 幹事/運営委員
  • Apr. 2017
    応用物理学会シリコンテクノロジー分科会 幹事
  • Apr. 2016
    日本結晶成長学会 理事
  • Jan. 2018
    日本学術振興会第161委員会 運営委員
  • Apr. 2019
    応用物理学会先進パワー半導体分科会 幹事
  • Nov. 2018
    The Forum on the Science and Technology of Silicon Materials 2024 Chair
  • Aug. 2019
    International Workshop on Gallium Oxide and Related Materials 2021 Local Arrangement Committee Chair

Research Themes

  • CZシリコン結晶成長における組成的過冷却および転位挙動評価
    2021 - 2025
  • Study on polycrystalline SiC coating
    2019 - 2022
  • Crystal growth of beta-gallium oxide
    2016 - 2025
  • Crystal growth of complete solid solution materials
    2013 - 2018
  • Solution growth of silicon carbide
    2012 - 2022
  • High quality germanium crystal growth
    2006 - 2013
  • Oxide crystal growth by vertical Bridgman method
    2003 - 2006
  • Czochralski growth of silicon crystals and evaluation of crystalline defects
    1998 - 2003

Industrial Property Rights

  • 無転位シリコン単結晶の製造方法, 特願2000-049667, Patent right
  • ランガサイト系単結晶の作製方法及び作製装置並びにその単結晶を用いた燃焼圧センサ, 特願2006-354972, Patent right
  • 低転位密度ゲルマニウム単結晶の製造方法, 特願2009-109980, Patent right
  • リチウムイオン電池用負極材料, 特願2013-271074, Patent right
  • ろ過器およびその製造方法ならびにこれを用いた金属回収方法, 特願2015-046885, Patent right
  • SiC単結晶の製造方法, 特願2015-193699, Patent right
  • SiC単結晶の製造方法, 特願2017- 67147, Patent right