論文 A 65nm CMOS Process Li-ion Battery Charging Cascode SIDO Boost Converter with 89% Maximum Efficiency for RF Wireless Power Transfer Receiver IEICE Transactions on Electronics,:2019CTP0003 2020(Apr.) Author:Yasuaki Isshiki, Dai Suzuki, Ryo Ishida, Kousuke Miyaji
Integrated CMOS Switch Buck DC-DC Converter Fabricated in Organic Interposer with Embedded Magnetic Core Inductor (to be published) Journal of the Magnetics Society of Japan,43(3):64-69 2019(May) Author:Tomoki Akiyama, Shu Ishida, Tomohiro Shirasawa, Takanobu Fukuoka, Shintaro Hara, Hiroshi Yoshida, Makoto Sonehara, Toshiro Sato, Kousuke Miyaji
A compact perspiration meter system with capacitive humidity sensor for wearable health-care applications Japanese Journal of Applied Physics,57(4S):04FF10 2018(Mar.) Author:Yusuke Mitani, Kousuke Miyaji, Satoshi Kaneko, Takaharu Uekura, Hideya Momose, Koh Johguchi
Pseudo-differential CMOS analog front-end circuit for wide-bandwidth optical probe current sensor Japanese Journal of Applied Physics,57(4S):04FF06 2018(Mar.) Author:Takaharu Uekura, Kousuke Oyanagi, Makoto Sonehara, Toshiro Sato, Kousuke Miyaji
A 190 mV start-up and 59.2% efficiency CMOS gate boosting voltage doubler charge pump in 0.18 um standard CMOS process for energy harvesting Japanese Journal of Applied Physics,57(4S):04FF02 2018(Feb.) Author:Minori Yoshida, Kousuke Miyaji
Number of traps and trap depth position on statistical distribution of random telegraph noise in scaled NAND flash memory Japanese Journal of Applied Physics,55(4S):04EE08 2016(Apr.) Author:Toshihiro Tomita, Kousuke Miyaji
Substrate Doping Concentration Dependence on Random Telegraph Noise Spatial and Statistical Distribution in 30nm NAND Flash Memory Japanese Journal of Applied Physics,54(4S):04DD02 2015(Apr.) Author:Toshihiro Tomita, Kousuke Miyaji
A Temperature tracking read reference current and write voltage generator for multi-level phase change memories IEICE Transactions on Electronics,E97-C(4):342-350 2014(Apr.) Author:Koh Johguchi, Toru Egami, Kousuke Miyaji, Ken Takeuchi
Co-design of application software and NAND flash memory in solid-state drive for relational database storage system Japanese Journal of Applied Physics,53(4S):04EE09 2014(Apr.) Author:Kousuke Miyaji, Chao Sun, Ayumi Soga, Ken Takeuchi
Hybrid triple-level-cell /multi-level-cell NAND flash storage array with chip exchangeable method Japanese Journal of Applied Physics,53(4S):04EE04 2014(Apr.) Author:Shogo Hachiya, Koh Johguchi, Kousuke Miyaji, Ken Takeuchi
A High Performance and Energy-Efficient Cold Data Eviction Algorithm for 3D-TSV Hybrid ReRAM/MLC NAND SSD IEEE Transactions on Circuit and Systems I,61(2):382-392 2014(Feb.) Author:Chao Sun, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi
Control gate length, spacing, channel hole diameter, and stacked layer number design for bit-cost scalable-type three-dimensional stackable NAND flash memory Japanese Journal of Applied Physics,53(2):024201 2014(Jan.) Author:Kousuke Miyaji, Yuki Yanagihara, Reo Hirasawa, Sheyang Ning, Ken Takeuchi
A 6T-SRAM With a Post-Process Electron Injection Scheme That Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy IEEE Journal of Solid-State Circuits,48(9):2239-2249 2013(Sep.) Author:Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano, Ken Takeuchi
Near Threshold Voltage Word-line Voltage Injection Self-Convergence Scheme for Local Electron Injected Asymmetric Pass Gate Transistor 6T-SRAM IEEE Trans. Circuit and Systems I,59(8):1635-1643 2012(Aug.) Author:Kousuke Miyaji Yasuhiro Shinozuka, Shinji Miyano, Ken Takeuchi
Endurance Enhancement and High Speed Set/Reset of 50nm Generation HfO2–based Resistive Random Access Memory (ReRAM) Cell by Intelligent Set/Reset Pulse Shape Optimization and Verify Scheme Japanese Journal of Applied Physics,51(2):02BD07 2012(Apr.) Author:Kazuhide Higuchi, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi
Initialize&and Weak-Program Erasing Scheme and Single-Pulse Programming Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive IEICE Transactions on Electronics,E95-C(4):609-616 2012(Apr.) Author:Kousuke Miyaji, Ryoji Yajima, Shigeki Sakai, Ken Takeuchi et al.
Analysis of Operation Margin and Read Speed in 6T- and 8T-SRAM with Local Electron Injected Asymmetric Pass Gate Transistor IEICE Transactions on Electronics,E95-C(4):564-571 2012(Apr.) Author:Kousuke Miyaji, Kentaro Honda, Shinji Miyano, Ken Takeuchi et al.
Zero Additional Process, Local Charge Trap, Embedded Flash Memory with Drain-side Assisted Erase Scheme Using Minimum Channel Length/Width Standard CMOS Single Transistor Cell Japanese Journal of Applied Physics,51(4):04DD02 2012(Apr.) Author:Kousuke Miyaji, Yasuhiro Shinozuka, Ken Takeuchi
Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in sub-20nm Bulk/SOI NAND Flash Memory Japanese Journal of Applied Physics,51(4):04DD12 2012(Apr.) Author:Kousuke Miyaji, Chinglin Hung, Ken Takeuchi
Improvement of Read Margin and its Distribution by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor Formed by Post-Process Local Electron Injection IEEE Journal of Solid-State Circuits,46(9):2180-2188 2011(Sep.) Author:Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda, Ken Takeuchi et al.
A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD Solid-State Electronics,58:34-41 2011(Jan.) Author:Kousuke Miyaji, Shinji Noda, Shigeki Sakai, Ken Takeuchi et al.
A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors Japanese Journal of Applied Physics,49(12):121501 2010(Dec.) Author:Shuhei Tanakamaru, Kousuke Miyaji, Shigeki Sakai, Ken Takeuchi et al.
A 1.2V Power Supply, 2.43 Times Power Efficient, Adaptive Charge Pump Circuit with Optimized VTH at Each Pump Stage for Ferroelectric (Fe)-NAND Flash Memories Japanese Journal of Applied Physics,49(4S):04DD10 2010(Apr.) Author:Shinji Noda, Kousuke Miyaji, Shigeki Sakai, Ken Takeuchi et al.
Silicon nanowire n-type metal-oxide-semiconductor field-effect transistors and single-electron transistors at room temperature under uniaxial tensile strain Journal of Applied Physics (JAP),105(8):084514 2009(Jun.) Author:Jeong YeonJoo, Kousuke Miyaji, Takuya Saraya, Toshiro Hiramoto
Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance-Voltage Method Japanese Journal of Applied Physics,48(1):011205 2009(Jan.) Author:Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Toshiro Hiramoto et al.
On the Origin of Negative Differential Conductance in Ultranarrow Wire Channel Silicon Single-Electron and Single-Hole Transistor Japanese Journal of Applied Physics,47(3):1813-1817 2008(Mar.) Author:Masaharu Kobayashi, Kousuke Miyaji, Toshiro Hiramoto
Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor Applied Physics Letters,92(7):073502 2008(Feb.) Author:Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi, Toshiro Hiramoto
Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature Applied Physics Letters,91(5):053509 2007(Aug.) Author:Kousuke Miyaji, Toshiro Hiramoto
Compact Analytical Model for Room-Temperature-Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels IEEE Transactions on Nanotechnology,5(3):167-173 2006(May) Author:Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors Applied Physics Letters,88(14):143505 2006(Apr.) Author:Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
Temperature Dependence of Off-Currentin Bulk and FD SOI MOSFETs Japanese Journal of Applied Physics,44(4B):2371-2375 2005(Apr.) Author:Kousuke Miyaji, Masumi Saitoh, Toshiharu Nagumo, Toshiro Hiramoto
Fundamentals of High Frequency DC-DC Converters IEEE International Solid-State Circuits Conference (ISSCC) 2022 Tutorial 2022(Feb.) Presenter:Kousuke Miyaji
A 5.7GHz RF Wireless Power Transfer Receiver Using 84.5% Efficiency 12V SIDO Buck-Boost DC-DC Converter with Internal Power Supply Mode IEEE Asian Solid-State Circuits Conference (A-SSCC) 2.4-1-3 2021(Nov.) Presenter:Tomohiro Higuchi, Dai Suzuki, Ryo Ishida, Yasuaki Isshiki, Kazuki Arai, Kohei Onizuka, Kousuke Miyaji
3D-Integrated Magnetics using Fe-based Metal Composite Materials for Beyond-10MHz Switching Power Supply 2021 International Workshop on Power Supply On Chip (PwrSoC) 3.2 2021(Oct.) Presenter:Kousuke Miyaji
光プローブ電流センサ向け容量型トランスインピーダンスアンプの広帯域化の検討 電子情報通信学会信越支部大会 59 2021(Sep.) Presenter:Nguyen La Hong Phuc, 赤羽和哉, 曽根原誠, 佐藤敏郎, 宮地幸祐
A 24V VIN 5-to-20V VOUT 10MHz 2-Phase GaN DC-DC Buck Converter with CF-AOOT Control for Wide Range Voltage Conversion Ratio International Conference on Solid State Devices and Materials (SSDM) 714-715 2021(Sep.) Presenter:Motohiro Kanai, Ryuya Maki, Norifumi Matsuda, Kyohei Tanimura, Hidetoshi Taki, Kousuke Miyaji
A 65nm CMOS Process Li-ion Battery Charging Cascode SIDO Boost Converter with 89% Maximum Efficiency for RF Wireless Power Transfer Receiver Asia and South Pacific Design Automation Conferenece 91-92 2021(Jan.) Presenter:Yasuaki Isshiki, Dai Suzuki, Ryo Ishida, Kousuke Miyaji
容量型TIAを用いた光プローブ電流センサ向けCMOSアナログフロントエンド回路の精度改善 電子情報通信学会信越支部大会 126 2020(Sep.) Presenter:赤羽和哉, Nguyen La Hong Phuc, 曽根原誠, 佐藤敏朗, 宮地幸祐
A 65nm CMOS Process 4.2V Battery Charging Cascode SIDO Boost Converter with 87% Maximum Efficiency for RF Wireless Power Transfer Receiver International Conference on Solid State Devices and Materials (SSDM) 535-536 2019(Sep.) Presenter:Yasuaki Isshiki, Dai Suzuki, Ryo Ishida, Kousuke Miyaji
A CMOS Integrated Sweat Monitoring System for Medical Applications International Symposium on Devices, Circuits (ISDCS) 9-2 2019(Mar.) Presenter:Tera Sakata, Yusuke Mitani, Kousuke Miyaji, Satoshi Kaneko, Takaharu Uekura, Hidetoshi Taki, Hideya Momose, Koh Johguchi
An 86% Efficiency, 20MHz, 3D-Integrated Buck Converter with Magnetic Core Inductor Embedded in Interposer Fabricated by Epoxy/Magnetic-Filler Composite Build-Up Sheet IEEE Applied Power Electronics Conference and Exposition (APEC) 1561-1566 2019(Mar.) Presenter:Takanobu Fukuoka, Yuki Karasawa, Tomoki Akiyama, Ryoutaro Oka, Shu Ishida, Tomohiro Shirasawa, Makoto Sonehara, Toshiro Sato, Kousuke Miyaji
A Wide Conversion Ratio, 92.8% Efficiency, 3-Level Buck Converter with Adaptive On/Off-Time Control and Shared Charge Pump Intermediate Voltage Regulator Asia and South Pacific Design Automation Conferenece 1A-1 2019(Jan.) Presenter:Kousuke Miyaji, Yuki Karasawa, Takanobu Fukuoka
A 92.8% Efficiency Adaptive-On/Off-Time Control 3-Level Buck Converter for Wide Conversion Ratio with Shared Charge Pump Intermediate Voltage Regulator IEEE Symposium on VLSI Circuits 227-228 2018(Jun.) Presenter:Yuki Karasawa, Takanobu Fukuoka, Kousuke Miyaji
Comparisons of Wire Bonding and Flip-Chip Bonding Assembly in High Frequency Hysteretic DC-DC Buck Converters International Conference on Solid State Devices and Materials (SSDM) 513-514 2017(Sep.) Presenter:Yuki Karasawa, Yusuke Gotou, Shintaro Hara, Takanobu Fukuoka, Kousuke Miyaji
A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Technique in 0.18um Standard CMOS Process for Energy Harvesting International Conference on Solid State Devices and Materials (SSDM) 509-510 2017(Sep.) Presenter:Minori Yoshida, Kousuke Miyaji
A 120dBohm 16MHz Pseudo Differential CMOS Analog Front End Circuit for Optical Probe Current Sensor International Conference on Solid State Devices and Materials (SSDM) 351-352 2017(Sep.) Presenter:Takaharu Uekura, Kousuke Oyanagi, Makoto Sonehara, Toshiro Sato, Kousuke Miyaji
A Compact Sweat Monitoring System with CMOS Capacitive Humidity Sensor for Wearable Health-Care Application International Conference on Solid State Devices and Materials (SSDM) 261-262 2017(Sep.) Presenter:Yusuke Mitani, Kousuke Miyaji, Satoshi Kaneko, Takaharu Uekura, Hideya Momose, Koh Johguchi
A ZVS active diode rectifier for wireless power transmission using voltage-time-conversion DLL IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) TH_1A_1 2017(Aug.) Presenter:Kousuke Miyaji, Hideki Shinohara
A 13.56MHz CMOS Active Diode Full-Wave Rectifier Achieving ZVS with Voltage-Time-Conversion Delay-Locked Loop for Wireless Power Transmission Asia and South Pacific Design Automation Conferenece 27-28 2017(Jan.) Presenter:Keita Yogosawa, Hideki Shinohara, Kousuke Miyaji
A ZVS CMOS Active Diode Rectifier with Voltage-Time-Conversion Delay-Locked Loop for Wireless Power Transmission IEEE Asian Solid-State Circuits Conference (A-SSCC) 15-3 2015(Nov.) Presenter:Hideki Shinohara, Kousuke Miyaji
Effects of Cell Vth State and Number of Traps on Statistical Distribution of Random Telegraph Noise in Scaled NAND Flash Memory International Conference on Solid State Devices and Materials (SSDM) 1188-1189 2015(Sep.) Presenter:Toshihiro Tomita, Kousuke Miyaji
Substrate Doping Concentration Dependence on Random Telegraph Noise Spatial and Statistical Distribution in 30nm NAND Flash Memory International Conference on Solid State Devices and Materials (SSDM) 462-463 2014(Sep.) Presenter:Toshihiro Tomita, Kousuke Miyaji
TLC/MLC NAND Flash Mix-and-Match Design with Exchangeable Storage Array International Conference on Solid State Devices and Materials (SSDM) 894-895 2013(Sep.) Presenter:Shogo Hachiya, Koh Johguchi, Kousuke Miyaji and Ken Takeuchi
Co-Design of Application Software and NAND Flash Memory for Database Storage System International Conference on Solid State Devices and Materials (SSDM) 130-131 2013(Sep.) Presenter:Kousuke Miyaji, Chao Sun and Ken Takeuchi
Hybrid ReRAM and MLC NAND SSD Memory System with Data Fragmentation Suppression Flash Memory Summit 2013(Aug.) Presenter:Tomoko Iwasaki, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Chao Sun, Ken Takeuchi
High Performance and Energy-efficient Hybrid ReRAM/MLC NAND Flash SSD with Intelligent Data Management Algorithm Symposium on Advanced Computing Systems and Infrastructures (SACSIS) 117-118 2013(Jun.) Presenter:Chao Sun, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi and Ken Takeuchi
Write Voltage and Read Reference Current Generator for Multi-Level Ge2Sb2Te5-based Phase Change Memories with Temperature Characteristics Tracking IEEE International Memory Workshop (IMW) 104-107 2013(May) Presenter:Koh Johguchi, Toru Egami, Kousuke Miyaji and Ken Takeuchi
SCM capacity and NAND over-provisioning requirements for SCM/NAND flash hybrid enterprise SSD IEEE International Memory Workshop (IMW) 64-67 2013(May) Presenter:Chao Sun, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi
Analysis on Static Noise Margin Improvement in 40nm 6T-SRAM with Post-Process Local Electron Injected Asymmetric Pass Gate Transistor IEEE International Reliability Physics Symposium (IRPS) 3B.6.1-3B.6.5 2013(Apr.) Presenter:Kousuke Miyaji, Daisuke Kobayashi, Shinji Miyano and Ken Takeuchi
Over 10-times High-speed, Energy Efficient 3D TSV-Integrated Hybrid ReRAM/MLC NAND SSD by Intelligent Data Fragmentation Suppression Asia and South Pacific Design Automation Conferenece 81-82 2013(Jan.) Presenter:Chao Sun, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Ken Takeuchi
An Integrated Variable Positive/Negative Temperature Coefficient Read Reference Generator for MLC PCM/NAND Hybrid 3D SSD IEEE Asian Solid-State Circuits Conference (A-SSCC) 313-316 2012(Nov.) Presenter:Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi and Ken Takeuchi
x11 Performance Increase, x6.9 Endurance Enhancement, 93% Energy Reduction of 3D TSV-Integrated Hybrid ReRAM/MLC NAND SSDs by Data Fragmentation Suppression IEEE Symposium on VLSI Circuits 134-135 2012(Jun.) Presenter:Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi et al.
Control Gate Length, Spacing and Stacked Layer Number Design for 3D-Stackable NAND Flash Memory IEEE International Memory Workshop (IMW) 84-87 2012(May) Presenter:Yuki Yanagihara, Kousuke Miyaji and Ken Takeuchi
A 6T-SRAM with a Carrier Injection Scheme to Pinpoint and Repair Fails that Achieves 57% Faster Read and 31% Lower Read Energy IEEE International Solid-State Circuits Conference (ISSCC) 232-233 2012(Feb.) Presenter:Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano and Ken Takeuchi
Pushing Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage from 13nm to 8nm with SOI NAND Flash Memory Cells International Conference on Solid State Devices and Materials (SSDM) 128-129 2011(Sep.) Presenter:Kousuke Miyaji, Chinglin Hung and Ken Takeuchi
A Zero Additional Process to Standard CMOS, 8F2, Scalable Embedded Flash Memory with Drain-side Assisted Erase Scheme International Conference on Solid State Devices and Materials (SSDM) 981-982 2011(Sep.) Presenter:Yasuhiro Shinozuka, Kousuke Miyaji and Ken Takeuchi
50nm HfO2 ReRAM with 50-Times Endurance Enhancement by Set/Reset Turnback Pulse&Verify Scheme International Conference on Solid State Devices and Materials (SSDM) 1011-1012 2011(Sep.) Presenter:Kazuhide Higuchi, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi
Statistical VTH Shift Variation Self-Convergence Scheme Using Near Threshold VWL Injection for Local Electron Injected Asymmetric Pass Gate Transistor SRAM IEEE Custom Integrated Circuits Conference (CICC) T-9 2011(Sep.) Presenter:Kousuke Miyaji, Yasuhiro Shinozuka, Shinji Miyano and Ken Takeuchi
Initialize&Weak-Program Erasing Scheme for Elimination of Cell VTH Shift Variation Due to History Effect in Ferroelectric (Fe)-NAND Flash Memories IEEESilicon Nanoelectronics Workshop 81-82 2011(Jun.) Presenter:Kousuke Miyaji, Ryoji Yajima, Shigeki Sakai, Ken Takeuchi et al.
0.5V Bit-Line-Voltage Self-Boost-Programming in Ferroelectric-NAND Flash Memory IEEE International Memory Workshop (IMW) 155-158 2011(May) Presenter:Zhang Xizhen, Kousuke Miyaji, Mitsue Takahashi, Ken Takeuchi, and Shigeki Sakai
Elimination of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor IEEE Custom Integrated Circuits Conference (CICC) M-10 2010(Sep.) Presenter:Kentaro Honda, Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano and Ken Takeuchi
70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection IEEE Symposium on VLSI Circuits 41-42 2010(Jun.) Presenter:Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano, Ken Takeuchi et al.
A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD IEEE International Memory Workshop (IMW) 42-45 2010(May) Presenter:Kousuke Miyaji, Shinji Noda, Shigeki Sakai, Ken Takeuchi et al.
A Ferroelectric NAND Flash Memory for Low-Power and Highly Reliable Enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V Low-Power CPU and SoC Materials Research Society (MRS) Spring Meeting 2010(Apr.) Presenter:Kousuke Miyaji, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi et al.
Advanced NAND Flash Memory Devices and Solid-State Drives Materials Research Society (MRS) Spring Meeting Tutorial G 2010(Apr.) Presenter:Kousuke Miyaji, Ken Takeuchi
Experimental Study of Mobility in [110]- and [100]-Directed Multiple Silicon Nanowire GAA MOSFETs on (100) SOI IEEE Symposium on VLSI Technology 32-33 2008(Jun.) Presenter:Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Toshiro Hiramoto et al.
Experimental Study on Silicon Nanowire nMOSFET and Single-Electron Transistor at Room Temperature under Uniaxial Tensile Strain IEEE Silicon Nanoelectronics Workshop M0930 2008(Jun.) Presenter:Yeon Joo Jeong, Kousuke Miyaji and Toshiro Hiramoto
Characteristic Modulation of Silicon MOSFETs and Single Electron Transistors with a Movable Gate Electrode IEEE Silicon Nanoelectronics Workshop S1015 2008(Jun.) Presenter:Jong Sin Park, Takuya Saraya, Kousuke Miyaji, Toshiro Hiramoto et Al.
Transport in Silicon Nanowire and Single-Electron Transistor International Conference on Simulation of Semiconductor Devices and Processes (SISPAD) 209-215 2007(Sep.) Presenter:Toshiro Hiramoto, Kousuke Miyaji, Masaharu Kobayashi
Novel Long-Range-Extension of Coulomb Blockade Region in Room-Temperature Operating Silicon Single-Hole Transistor IEEE Silicon Nanoelectronics Workshop 115-116 2007(Jun.) Presenter:Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi and Toshiro Hiramoto
Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor International Conference on Solid State Devices and Materials (SSDM) 836-837 2006(Sep.) Presenter:Kousuke Miyaji and Toshiro Hiramoto
Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors International Conference on Solid State Devices and Materials (SSDM) 806-807 2006(Sep.) Presenter:Masaharu Kobayashi, Kousuke Miyaji and Toshiro Hiramoto
On the Accuracy of Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels International Semiconductor Device Research Symposium (ISDRS) WP7-07-06 2005(Dec.) Presenter:Kousuke Miyaji, Masaharu Kobayashi, Tetsu Ohtou and Toshiro Hiramoto
Large Temperature Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Electron/Single-Hole Transistor International Semiconductor Device Research Symposium (ISDRS) TP3-03 2005(Dec.) Presenter:Masaharu Kobayashi, Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto
Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain International Conference on Solid State Devices and Materials (SSDM) 166-167 2005(Sep.) Presenter:Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto
Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels IEEE Silicon Nanoelectronics Workshop 82-83 2005(Jun.) Presenter:Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto
Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs International Conference on Solid State Devices and Materials (SSDM) 236-237 2004(Sep.) Presenter:Kousuke Miyaji, Masumi Saitoh, Toshiharu Nagumo and Toshiro Hiramoto
学術専門雑誌等編集 2020- , International Conference on Solid State Devices and Materials TPC Member 2020- , International Solid-State Circuits Conference TPC Member 2016- , IEICE Transactions on Electronics 2015- , IEICE Transactions on Electronics Special Section on VLSI Design and CAD Algorithms 2012- , IEICE Transactions on Electronics Special Section on Solid-State Circuit Design - Architecture, Circuit, Device and Design Methodology Asia and South Pacific Design Automation Conference University Design Contest TPC Co-Chair Asia and South Pacific Design Automation Conference University Design Contest TPC Co-Chair 2015-2021 , Asia and South Pacific Design Automation Conference University Design Contest TPC Member 2015-2017 , International Conference on Solid State Devices and Materials TPC Secretary
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