MIYAJI Kousuke

Academic Assembly　School of Science and Technology　Institute of Engineering

Faculty of Engineering　Electrical and Computer Engineering　

Professor　

Researcher Information

Degree

  • Ph.D Eng., The University of Tokyo
  • M. Eng., The University of Tokyo
  • B. Eng., The University of Tokyo

Research Keyword

    Power Management Integrated Circuit Design, Package Integrated Voltage Regulator, RF Wireless Power Transfer, Isolated DC-DC Converter, High Conversion Ratio DC-DC Converter, Low Loss Magnetic Passive Component Design

Field Of Study

  • Electron device and electronic equipment, Electron device/Electronic equipment

Mail Address

    kmiyaji★shinshu-u.ac.jp

Career

  • 2024
    Professor, Department of Electrical and Computer Engineering, Shinshu University
  • 2016 - 2024
    Associate Professor, Department of Electrical and Computer Engineering, Shinshu University
  • 2015 - 2016
    Associate Professor, Department of Electrical and Electronic Engineering, Shinshu University
  • 2013 - 2015
    Assistant Professor, Department of Electrical and Electronic Engineering, Shinshu University
  • 2012 - 2013
    Assistant Professor, Research and Development Intiative, Chuo University
  • 2010 - 2012
    Assistant Professor, Institue of Industrial Science (IIS), The University of Tokyo
  • 2009 - 2010
    Researcher, Institue of Industrial Science (IIS), The University of Tokyo
  • 2007 - 2008
    日本学術振興会 特別研究員（DC2）

Educational Background

  • 2003, The University of Tokyo, Faculty of Engineering, Department of Electronic Engineering
  • 2008, The University of Tokyo, Graduate School of Engineering, Department of Electronic Engineering
  • 2005, The University of Tokyo, Graduate School of Engineering, Department of Electronic Engineering

Member History

  • 2023
    ISSCC Far East Committee Officer, IEEE ISSCC
  • 2023
    SSDM Area 12 Vice Chair, JSAP
  • 2021
    ISSCC International Technical Program Committee, IEEE ISSCC
  • 2020
    SSDM Technical Program Committee Secretary, JSAP
  • 2015 - 2018
    SSDM Program Committee Secretary, JSAP
  • 2014 - 2015
    ASP-DAC2015 Design Contest Committee, ACM, IEEE, IEICE, IPSJ
Research activity information

Award

  • 2023
    IEICE, IEICE Electronics Society Invited Paper Award 2023 (IEICE Transactions on Electronics)
  • 2021
    26th Asia and South Pacific Design Automation Conference (ASP-DAC) 2021, University LSI Design Contest, Special Feature Award
  • 2019
    24th Asia and South Pacific Design Automation Conference (ASP-DAC) 2019, University LSI Design Contest, Best Design Award

Paper

  • A 24V-to-1V integrated dual-charging path dual-inductor hybrid converter for improved step-up load transient response
    Kazuya Nishijima, Toma Umeki, Kousuke Miyaji
    Japanese Journal of Applied Physics, 62, SC1047, Feb. 2023
  • Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter
    Kousuke Miyaji
    IEICE Transactions on Electronics, E105-C(10), 521-533, Oct. 2022, Invited
  • A 65nm CMOS Process Li-ion Battery Charging Cascode SIDO Boost Converter with 89% Maximum Efficiency for RF Wireless Power Transfer Receiver
    Yasuaki Isshiki, Dai Suzuki, Ryo Ishida, Kousuke Miyaji
    IEICE Transactions on Electronics, 2019CTP0003, Apr. 2020
  • Integrated CMOS Switch Buck DC-DC Converter Fabricated in Organic Interposer with Embedded Magnetic Core Inductor
    Tomoki Akiyama, Shu Ishida, Tomohiro Shirasawa, Takanobu Fukuoka, Shintaro Hara, Hiroshi Yoshida, Makoto Sonehara, Toshiro Sato, Kousuke Miyaji
    Journal of the Magnetics Society of Japan, 43(3), 64-69, May 2019
  • Pseudo-differential CMOS analog front-end circuit for wide-bandwidth optical probe current sensor
    Takaharu Uekura, Kousuke Oyanagi, Makoto Sonehara, Toshiro Sato, Kousuke Miyaji
    Japanese Journal of Applied Physics, 57(4S), 04FF06, Mar. 2018
  • A compact perspiration meter system with capacitive humidity sensor for wearable health-care applications
    Yusuke Mitani, Kousuke Miyaji, Satoshi Kaneko, Takaharu Uekura, Hideya Momose, Koh Johguchi
    Japanese Journal of Applied Physics, 57(4S), 04FF10, Mar. 2018
  • A 190 mV start-up and 59.2% efficiency CMOS gate boosting voltage doubler charge pump in 0.18 um standard CMOS process for energy harvesting
    Minori Yoshida, Kousuke Miyaji
    Japanese Journal of Applied Physics, 57(4S), 04FF02, Feb. 2018
  • Number of traps and trap depth position on statistical distribution of random telegraph noise in scaled NAND flash memory
    Toshihiro Tomita, Kousuke Miyaji
    Japanese Journal of Applied Physics, 55(4S), 04EE08, Apr. 2016
  • Substrate Doping Concentration Dependence on Random Telegraph Noise Spatial and Statistical Distribution in 30nm NAND Flash Memory
    Toshihiro Tomita, Kousuke Miyaji
    Japanese Journal of Applied Physics, 54(4S), 04DD02, Apr. 2015
  • Hybrid triple-level-cell /multi-level-cell NAND flash storage array with chip exchangeable method
    Shogo Hachiya, Koh Johguchi, Kousuke Miyaji, Ken Takeuchi
    Japanese Journal of Applied Physics, 53(4S), 04EE04, Apr. 2014
  • Co-design of application software and NAND flash memory in solid-state drive for relational database storage system
    Kousuke Miyaji, Chao Sun, Ayumi Soga, Ken Takeuchi
    Japanese Journal of Applied Physics, 53(4S), 04EE09, Apr. 2014
  • A temperature tracking read reference current and write voltage generator for multi-level phase change memories
    Koh Johguchi, Toru Egami, Kousuke Miyaji, Ken Takeuchi
    IEICE Transactions on Electronics, E97-C(4), 342-350, Apr. 2014
  • A high performance and energy-efficient cold data eviction algorithm for 3D-TSV hybrid ReRAM/MLC NAND SSD
    Chao Sun, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi
    IEEE Transactions on Circuit and Systems I, 61(2), 382-392, Feb. 2014
  • Control gate length, spacing, channel hole diameter, and stacked layer number design for bit-cost scalable-type three-dimensional stackable NAND flash memory
    Kousuke Miyaji, Yuki Yanagihara, Reo Hirasawa, Sheyang Ning, Ken Takeuchi
    Japanese Journal of Applied Physics, 53(2), 024201, Jan. 2014
  • A 6T-SRAM With a Post-Process Electron Injection Scheme That Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy
    Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano, Ken Takeuchi
    IEEE Journal of Solid-State Circuits, 48(9), 2239-2249, Sep. 2013
  • Near Threshold Voltage Word-line Voltage Injection Self-Convergence Scheme for Local Electron Injected Asymmetric Pass Gate Transistor 6T-SRAM
    Kousuke Miyaji Yasuhiro Shinozuka, Shinji Miyano, Ken Takeuchi
    IEEE Trans. Circuit and Systems I, 59(8), 1635-1643, Aug. 2012
  • Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in sub-20nm Bulk/SOI NAND Flash Memory
    Kousuke Miyaji, Chinglin Hung, Ken Takeuchi
    Japanese Journal of Applied Physics, 51(4), 04DD12, Apr. 2012
  • Zero Additional Process, Local Charge Trap, Embedded Flash Memory with Drain-side Assisted Erase Scheme Using Minimum Channel Length/Width Standard CMOS Single Transistor Cell
    Kousuke Miyaji, Yasuhiro Shinozuka, Ken Takeuchi
    Japanese Journal of Applied Physics, 51(4), 04DD02, Apr. 2012
  • Analysis of Operation Margin and Read Speed in 6T- and 8T-SRAM with Local Electron Injected Asymmetric Pass Gate Transistor
    Kousuke Miyaji, Kentaro Honda, Shinji Miyano, Ken Takeuchi et al.
    IEICE Transactions on Electronics, E95-C(4), 564-571, Apr. 2012
  • Initialize&and Weak-Program Erasing Scheme and Single-Pulse Programming Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive
    Kousuke Miyaji, Ryoji Yajima, Shigeki Sakai, Ken Takeuchi et al.
    IEICE Transactions on Electronics, E95-C(4), 609-616, Apr. 2012
  • Endurance Enhancement and High Speed Set/Reset of 50nm Generation HfO2–based Resistive Random Access Memory (ReRAM) Cell by Intelligent Set/Reset Pulse Shape Optimization and Verify Scheme
    Kazuhide Higuchi, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi
    Japanese Journal of Applied Physics, 51(2), 02BD07, Apr. 2012
  • Improvement of Read Margin and its Distribution by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor Formed by Post-Process Local Electron Injection
    Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda, Ken Takeuchi et al.
    IEEE Journal of Solid-State Circuits, 46(9), 2180-2188, Sep. 2011
  • A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD
    Kousuke Miyaji, Shinji Noda, Shigeki Sakai, Ken Takeuchi et al.
    Solid-State Electronics, 58, 34-41, Jan. 2011
  • A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors
    Shuhei Tanakamaru, Kousuke Miyaji, Shigeki Sakai, Ken Takeuchi et al.
    Japanese Journal of Applied Physics, 49(12), 121501, Dec. 2010
  • A 1.2V Power Supply, 2.43 Times Power Efficient, Adaptive Charge Pump Circuit with Optimized VTH at Each Pump Stage for Ferroelectric (Fe)-NAND Flash Memories
    Shinji Noda, Kousuke Miyaji, Shigeki Sakai, Ken Takeuchi et al.
    Japanese Journal of Applied Physics, 49(4S), 04DD10, Apr. 2010
  • Silicon nanowire n-type metal-oxide-semiconductor field-effect transistors and single-electron transistors at room temperature under uniaxial tensile strain
    Jeong YeonJoo, Kousuke Miyaji, Takuya Saraya, Toshiro Hiramoto
    Journal of Applied Physics (JAP), 105(8), 084514, Jun. 2009
  • Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance-Voltage Method
    Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Toshiro Hiramoto et al.
    Japanese Journal of Applied Physics, 48(1), 011205, Jan. 2009
  • On the Origin of Negative Differential Conductance in Ultranarrow Wire Channel Silicon Single-Electron and Single-Hole Transistor
    Masaharu Kobayashi, Kousuke Miyaji, Toshiro Hiramoto
    Japanese Journal of Applied Physics, 47(3), 1813-1817, Mar. 2008
  • Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor
    Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi, Toshiro Hiramoto
    APPLIED PHYSICS LETTERS, 92(7), 073502, Feb. 2008
  • Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature
    Kousuke Miyaji, Toshiro Hiramoto
    APPLIED PHYSICS LETTERS, 91(5), 053509, Aug. 2007
  • Compact Analytical Model for Room-Temperature-Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels
    Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
    IEEE Transactions on Nanotechnology, 5(3), 167-173, May 2006
  • Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors
    Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
    APPLIED PHYSICS LETTERS, 88(14), 143505, Apr. 2006
  • Temperature Dependence of Off-Currentin Bulk and FD SOI MOSFETs
    Kousuke Miyaji, Masumi Saitoh, Toshiharu Nagumo, Toshiro Hiramoto
    Japanese Journal of Applied Physics, 44(4B), 2371-2375, Apr. 2005

Books and other publications

  • 科学情報出版株式会社
    田代晋久、脇若弘之、佐藤敏郎、曽根原誠、水野勉、卜穎剛、宮地幸祐、中澤達夫、生稲弘明、笠井利幸, Joint work, 環境磁界発電-原理と設計法-
    Mar. 2016

Lectures, oral presentations, etc.

  • A 0.67A/mm2 Fully Package Integrated CMOS Class-D LC Oscillator Converter
    Atsuya Kakuta, Kousuke Miyaji
    International Conference on Solid State Devices and Materials(SSDM), N-7-01, Sep. 2024
  • A 64.4% Efficiency 5.8GHz RF Wireless Power Transfer Receiver with GaAs E-pHEMT Rectifier and 45.2μs MPPT Time SIDITO Buck-Boost Converter using VOC Prediction Scheme
    Kyohei Ichikawa, Tatsuki Iwata, Saya Onishi, Tomohiro Higuchi, Yuya Hirose, Naoki Sakai, Kenji Itoh, and Kousuke Miyaji
    IEEE International Solid-State Circuits Conference (ISSCC), Feb. 2024
  • A Collaboration from High Frequency Soft Magnetic Materials to Integrated Circuit Design for beyond 10MHz Switching Power Supply
    Kousuke Miyaji, Makoto Sonehara, and Toshiro Sato
    IEEE International Magnetics Conference 2023 (INTERMAG2023), FA-06, May 2023
  • A Design Methodology for 30MHz Fe-based Metal Composite Core Isolation Power Transformer and LLC Resonant Converter
    Mizuki Muramatsu, Jun Kawasaki, Kazuhiro Shimura, Nanami Kawada, Mitsuhide Sato, Makoto Sonehara, Toshiro Sato, Tsutomu Mizuno, and Kousuke Miyaji
    International Symposium on Integrated Magnetics 2023 (iSIM 2023), p. 45, May 2023., May 2023
  • A 289nH 20MHz Isolation Planar Power Transformer with Fe-based Metal Composite Magnetic Core
    Jun Kawasaki, Kazuhiro Shimura, Mizuki Muramatsu, Nanami Kawada, Mitsuhide Sato, Makoto Sonehara, Toshiro Sato, Tsutomu Mizuno, and Kousuke Miyaji
    International Symposium on Integrated Magnetics 2023 (iSIM 2023), p. 46, May 2023
  • Crossed Anisotropy Multilayered Nanogranular Films Combining High Permeability, Ferromagnetic Resonance Frequency, and Resistivity
    Masayuki Naoe, Makoto Sonehara, Kousuke Miyaji, Toshiro Sato, Yasushi Endo, Nobuyuki Kobayashi, and Ken-Ichi Arai
    IEEE International Magnetics Conference 2023 (INTERMAG2023), VPB-14, May 2023
  • A 15MHz GaN FET AZVT Buck Converter that Achieves 7.2-point Efficiency Increase at Heavy Load
    Motohiro Kanai, Hidetoshi Taki, Kyohei Tanimura, Kousuke Miyaji
    IEEE Energy Conversion Congress & Exposition (ECCE), 0367, Oct. 2022
  • A 24V-to-1V On-Chip Switch Dual-Charging Path Dual-Inductor Hybrid Converter Achieving Improved Load Transient Response
    Kazuya Nishijima, Toma Umeki, Kousuke Miyaji
    International Conference on Solid State Devices and Materials (SSDM) 794–795, Sep. 2022
  • 3D-Integrated Beyond-10MHz Buck Converter with Fe-based Metal Composite Magnetic Core Inductor
    Kousuke Miyaji, Makoto Sonehara, Toshiro Sato
    IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), T5B.5, Aug. 2022
  • Fundamentals of High Frequency DC-DC Converters
    Kousuke Miyaji
    IEEE International Solid-State Circuits Conference (ISSCC) 2022 Tutorial, Feb. 2022
  • A 5.7GHz RF Wireless Power Transfer Receiver Using 84.5% Efficiency 12V SIDO Buck-Boost DC-DC Converter with Internal Power Supply Mode
    Tomohiro Higuchi, Dai Suzuki, Ryo Ishida, Yasuaki Isshiki, Kazuki Arai, Kohei Onizuka, Kousuke Miyaji
    IEEE Asian Solid-State Circuits Conference (A-SSCC) 2.4-1-3, Nov. 2021
  • 3D-Integrated Magnetics using Fe-based Metal Composite Materials for Beyond-10MHz Switching Power Supply
    Kousuke Miyaji
    2021 International Workshop on Power Supply On Chip (PwrSoC) 3.2, Oct. 2021
  • A 24V VIN 5-to-20V VOUT 10MHz 2-Phase GaN DC-DC Buck Converter with CF-AOOT Control for Wide Range Voltage Conversion Ratio
    Motohiro Kanai, Ryuya Maki, Norifumi Matsuda, Kyohei Tanimura, Hidetoshi Taki, Kousuke Miyaji
    International Conference on Solid State Devices and Materials (SSDM) 714-715, Sep. 2021
  • A 65nm CMOS Process Li-ion Battery Charging Cascode SIDO Boost Converter with 89% Maximum Efficiency for RF Wireless Power Transfer Receiver
    Yasuaki Isshiki, Dai Suzuki, Ryo Ishida, Kousuke Miyaji
    Asia and South Pacific Design Automation Conferenece 91-92, Jan. 2021
  • A 65nm CMOS Process 4.2V Battery Charging Cascode SIDO Boost Converter with 87% Maximum Efficiency for RF Wireless Power Transfer Receiver
    Yasuaki Isshiki, Dai Suzuki, Ryo Ishida, Kousuke Miyaji
    International Conference on Solid State Devices and Materials (SSDM) 535-536, Sep. 2019
  • An 86% Efficiency, 20MHz, 3D-Integrated Buck Converter with Magnetic Core Inductor Embedded in Interposer Fabricated by Epoxy/Magnetic-Filler Composite Build-Up Sheet
    Takanobu Fukuoka, Yuki Karasawa, Tomoki Akiyama, Ryoutaro Oka, Shu Ishida, Tomohiro Shirasawa, Makoto Sonehara, Toshiro Sato, Kousuke Miyaji
    IEEE Applied Power Electronics Conference and Exposition (APEC) 1561-1566, Mar. 2019
  • A CMOS integrated sweat monitoring system for medical applications
    Tera Sakata, Yusuke Mitani, Kousuke Miyaji, Satoshi Kaneko, Takaharu Uekura, Hidetoshi Taki, Hideya Momose, Koh Johguchi
    International Symposium on Devices, Circuits (ISDCS) 9-2, Mar. 2019
  • A Wide Conversion Ratio, 92.8% Efficiency, 3-Level Buck Converter with Adaptive On/Off-Time Control and Shared Charge Pump Intermediate Voltage Regulator
    Kousuke Miyaji, Yuki Karasawa, Takanobu Fukuoka
    Asia and South Pacific Design Automation Conferenece 1A-1, Jan. 2019
  • A 92.8% Efficiency Adaptive-On/Off-Time Control 3-Level Buck Converter for Wide Conversion Ratio with Shared Charge Pump Intermediate Voltage Regulator
    Yuki Karasawa, Takanobu Fukuoka, Kousuke Miyaji
    IEEE Symposium on VLSI Circuits 227-228, Jun. 2018
  • A compact sweat monitoring system with CMOS capacitive humidity sensor for wearable health-care application
    Yusuke Mitani, Kousuke Miyaji, Satoshi Kaneko, Takaharu Uekura, Hideya Momose, Koh Johguchi
    International Conference on Solid State Devices and Materials (SSDM) 261-262, Sep. 2017
  • A 120dBohm 16MHz Pseudo Differential CMOS Analog Front End Circuit for Optical Probe Current Sensor
    Takaharu Uekura, Kousuke Oyanagi, Makoto Sonehara, Toshiro Sato, Kousuke Miyaji
    International Conference on Solid State Devices and Materials (SSDM) 351-352, Sep. 2017
  • A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Technique in 0.18um Standard CMOS Process for Energy Harvesting
    Minori Yoshida, Kousuke Miyaji
    International Conference on Solid State Devices and Materials (SSDM) 509-510, Sep. 2017
  • Comparisons of Wire Bonding and Flip-Chip Bonding Assembly in High Frequency Hysteretic DC-DC Buck Converters
    Yuki Karasawa, Yusuke Gotou, Shintaro Hara, Takanobu Fukuoka, Kousuke Miyaji
    International Conference on Solid State Devices and Materials (SSDM) 513-514, Sep. 2017
  • A ZVS active diode rectifier for wireless power transmission using voltage-time-conversion DLL
    Kousuke Miyaji, Hideki Shinohara
    IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) TH_1A_1, Aug. 2017
  • A 13.56MHz CMOS Active Diode Full-Wave Rectifier Achieving ZVS with Voltage-Time-Conversion Delay-Locked Loop for Wireless Power Transmission
    Keita Yogosawa, Hideki Shinohara, Kousuke Miyaji
    Asia and South Pacific Design Automation Conferenece 27-28, Jan. 2017
  • A ZVS CMOS Active Diode Rectifier with Voltage-Time-Conversion　Delay-Locked Loop for Wireless Power Transmission
    Hideki Shinohara, Kousuke Miyaji
    IEEE Asian Solid-State Circuits Conference (A-SSCC) 15-3, Nov. 2015
  • Effects of Cell Vth State and Number of Traps on Statistical Distribution of Random Telegraph Noise in Scaled NAND Flash Memory
    Toshihiro Tomita, Kousuke Miyaji
    International Conference on Solid State Devices and Materials (SSDM) 1188-1189, Sep. 2015
  • Substrate Doping Concentration Dependence on Random Telegraph Noise Spatial and Statistical Distribution in 30nm NAND Flash Memory
    Toshihiro Tomita, Kousuke Miyaji
    International Conference on Solid State Devices and Materials (SSDM) 462-463, Sep. 2014
  • 3D-Integrated Storage Class Memory/NAND Flash Hybrid SSDs for Cloud Data Centers
    Shun Okamoto, Chao Sun, Shogo Hachiya, Koh Johguchi, Kousuke Miyaji, Ken Takeuchi
    Non-Volatile Memories Workshop (NVMW) Poster 64, Mar. 2014
  • Co-Design of Application Software and NAND Flash Memory for Database Storage System
    Kousuke Miyaji, Chao Sun and Ken Takeuchi
    International Conference on Solid State Devices and Materials (SSDM) 130-131, Sep. 2013
  • TLC/MLC NAND flash mix-and-match design with exchangeable storage array
    Shogo Hachiya, Koh Johguchi, Kousuke Miyaji and Ken Takeuchi
    International Conference on Solid State Devices and Materials (SSDM) 894-895, Sep. 2013
  • Hybrid ReRAM and MLC NAND SSD Memory System with Data Fragmentation Suppression
    Tomoko Iwasaki, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Chao Sun, Ken Takeuchi
    Flash Memory Summit, Aug. 2013
  • High Performance and Energy-efficient Hybrid ReRAM/MLC NAND Flash SSD with Intelligent Data Management Algorithm
    Chao Sun, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi and Ken Takeuchi
    Symposium on Advanced Computing Systems and Infrastructures (SACSIS) 117-118, Jun. 2013
  • SCM capacity and NAND over-provisioning requirements for SCM/NAND flash hybrid enterprise SSD
    Chao Sun, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi
    IEEE International Memory Workshop (IMW) 64-67, May 2013
  • Write Voltage and Read Reference Current Generator for Multi-Level Ge2Sb2Te5-based Phase Change Memories with Temperature Characteristics Tracking
    Koh Johguchi, Toru Egami, Kousuke Miyaji and Ken Takeuchi
    IEEE International Memory Workshop (IMW) 104-107, May 2013
  • Analysis on Static Noise Margin Improvement in 40nm 6T-SRAM with Post-Process Local Electron Injected Asymmetric Pass Gate Transistor
    Kousuke Miyaji, Daisuke Kobayashi, Shinji Miyano and Ken Takeuchi
    IEEE International Reliability Physics Symposium (IRPS) 3B.6.1-3B.6.5, Apr. 2013
  • Over 10-times high-speed, energy efficient 3D TSV-integrated hybrid ReRAM/MLC NAND SSD by intelligent data fragmentation suppression
    Chao Sun, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Ken Takeuchi
    Asia and South Pacific Design Automation Conferenece 81-82, Jan. 2013
  • An integrated variable positive/negative temperature coefficient read reference generator for MLC PCM/NAND hybrid 3D SSD
    Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi and Ken Takeuchi
    IEEE Asian Solid-State Circuits Conference (A-SSCC) 313-316, Nov. 2012
  • x11 performance increase, x6.9 endurance enhancement, 93% energy reduction of 3D TSV-integrated hybrid ReRAM/MLC NAND SSDs by data fragmentation suppression
    Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi et al.
    IEEE Symposium on VLSI Circuits 134-135, Jun. 2012
  • Control Gate Length, Spacing and Stacked Layer Number Design for 3D-Stackable NAND Flash Memory
    Yuki Yanagihara, Kousuke Miyaji and Ken Takeuchi
    IEEE International Memory Workshop (IMW) 84-87, May 2012
  • A 6T-SRAM with a Carrier Injection Scheme to Pinpoint and Repair Fails that Achieves 57% Faster Read and 31% Lower Read Energy
    Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano and Ken Takeuchi
    IEEE International Solid-State Circuits Conference (ISSCC) 232-233, Feb. 2012
  • Statistical VTH Shift Variation Self-Convergence Scheme Using Near Threshold VWL Injection for Local Electron Injected Asymmetric Pass Gate Transistor SRAM
    Kousuke Miyaji, Yasuhiro Shinozuka, Shinji Miyano and Ken Takeuchi
    IEEE Custom Integrated Circuits Conference (CICC) T-9, Sep. 2011
  • 50nm HfO2 ReRAM with 50-Times Endurance Enhancement by Set/Reset Turnback Pulse&Verify Scheme
    Kazuhide Higuchi, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi
    International Conference on Solid State Devices and Materials (SSDM) 1011-1012, Sep. 2011
  • A Zero Additional Process to Standard CMOS, 8F2, Scalable Embedded Flash Memory with Drain-side Assisted Erase Scheme
    Yasuhiro Shinozuka, Kousuke Miyaji and Ken Takeuchi
    International Conference on Solid State Devices and Materials (SSDM) 981-982, Sep. 2011
  • Pushing Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage from 13nm to 8nm with SOI NAND Flash Memory Cells
    Kousuke Miyaji, Chinglin Hung and Ken Takeuchi
    International Conference on Solid State Devices and Materials (SSDM) 128-129, Sep. 2011
  • Initialize&Weak-Program Erasing Scheme for Elimination of Cell VTH Shift Variation Due to History Effect in Ferroelectric (Fe)-NAND Flash Memories
    Kousuke Miyaji, Ryoji Yajima, Shigeki Sakai, Ken Takeuchi et al.
    IEEESilicon Nanoelectronics Workshop 81-82, Jun. 2011
  • 0.5V Bit-Line-Voltage Self-Boost-Programming in Ferroelectric-NAND Flash Memory
    Zhang Xizhen, Kousuke Miyaji, Mitsue Takahashi, Ken Takeuchi, and Shigeki Sakai
    IEEE International Memory Workshop (IMW) 155-158, May 2011
  • Elimination of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor
    Kentaro Honda, Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano and Ken Takeuchi
    IEEE Custom Integrated Circuits Conference (CICC) M-10, Sep. 2010
  • 70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection
    Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano, Ken Takeuchi et al.
    IEEE Symposium on VLSI Circuits 41-42, Jun. 2010
  • A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD
    Kousuke Miyaji, Shinji Noda, Shigeki Sakai, Ken Takeuchi et al.
    IEEE International Memory Workshop (IMW) 42-45, May 2010
  • Advanced NAND Flash Memory Devices and Solid-State Drives
    Kousuke Miyaji, Ken Takeuchi
    Materials Research Society (MRS) Spring Meeting Tutorial G, Apr. 2010, Invited
  • A Ferroelectric NAND Flash Memory for Low-Power and Highly Reliable Enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V Low-Power CPU and SoC
    Kousuke Miyaji, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi et al.
    Materials Research Society (MRS) Spring Meeting, Apr. 2010, Invited
  • Characteristic Modulation of Silicon MOSFETs and Single Electron Transistors with a Movable Gate Electrode
    Jong Sin Park, Takuya Saraya, Kousuke Miyaji, Toshiro Hiramoto et Al.
    IEEE Silicon Nanoelectronics Workshop S1015, Jun. 2008
  • Experimental Study on Silicon Nanowire nMOSFET and Single-Electron Transistor at Room Temperature under Uniaxial Tensile Strain
    Yeon Joo Jeong, Kousuke Miyaji and Toshiro Hiramoto
    IEEE Silicon Nanoelectronics Workshop M0930, Jun. 2008
  • Experimental Study of Mobility in [110]- and [100]-Directed Multiple Silicon Nanowire GAA MOSFETs on (100) SOI
    Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Toshiro Hiramoto et al.
    IEEE Symposium on VLSI Technology 32-33, Jun. 2008
  • Transport in Silicon Nanowire and Single-Electron Transistor
    Toshiro Hiramoto, Kousuke Miyaji, Masaharu Kobayashi
    International Conference on Simulation of Semiconductor Devices and Processes (SISPAD) 209-215, Sep. 2007, Invited
  • Novel Long-Range-Extension of Coulomb Blockade Region in Room-Temperature Operating Silicon Single-Hole Transistor
    Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi and Toshiro Hiramoto
    IEEE Silicon Nanoelectronics Workshop 115-116, Jun. 2007
  • Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors
    Masaharu Kobayashi, Kousuke Miyaji and Toshiro Hiramoto
    International Conference on Solid State Devices and Materials (SSDM) 806-807, Sep. 2006
  • Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor
    Kousuke Miyaji and Toshiro Hiramoto
    International Conference on Solid State Devices and Materials (SSDM) 836-837, Sep. 2006
  • Large Temperature Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Electron/Single-Hole Transistor
    Masaharu Kobayashi, Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto
    International Semiconductor Device Research Symposium (ISDRS) TP3-03, Dec. 2005
  • On the Accuracy of Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels
    Kousuke Miyaji, Masaharu Kobayashi, Tetsu Ohtou and Toshiro Hiramoto
    International Semiconductor Device Research Symposium (ISDRS) WP7-07-06, Dec. 2005
  • Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain
    Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto
    International Conference on Solid State Devices and Materials (SSDM) 166-167, Sep. 2005
  • Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels
    Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto
    IEEE Silicon Nanoelectronics Workshop 82-83, Jun. 2005
  • Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs
    Kousuke Miyaji, Masumi Saitoh, Toshiharu Nagumo and Toshiro Hiramoto
    International Conference on Solid State Devices and Materials (SSDM) 236-237, Sep. 2004

Courses

  • Electronic Circuits
    Shinshu University
  • CMOS Analog Integrated Circuit Design
    Shinshu University
  • Electrical and Electronic Experiments I
    Shinshu University
  • Physics Nearby and the Advanced Applications
    Shinshu University
  • LSI Design
    Shinshu University

Affiliated academic society

  • 2009
    IEEE SSCS, EDS, CAS, PELS
  • 2015
    JSAP
  • 2011
    IEICE

Research Themes

  • 体内埋め込み型医療デバイス向け小型・高効率かつ高速応答非接触給電回路システムの構築
    中部電気利用基礎研究振興財団
    01 Apr. 2016
  • フィージビリティスタディ パッケージ内蔵パワーインダクタを用いたSSD向け三次元集積統合降圧DC-DCコンバータの研究開発
    共同研究, STARC
    01 Apr. 2015 - 31 Mar. 2018
  • High efficiency power management integrated circuit design

Academic Contribution Activities

  • Others
    International Solid-State Circuits Conference TPC FE Associate Secretary, 2023
  • Others
    Asia and South Pacific Design Automation Conference University Design Contest TPC Co-Chair, 2021
  • Others
    International Conference on Solid State Devices and Materials TPC Member, 2020
  • Others
    International Solid-State Circuits Conference TPC Member, 2020
  • Others
    Asia and South Pacific Design Automation Conference University Design Contest TPC Co-Chair, 2019
  • Others
    IEICE Transactions on Electronics , Jun. 2016
  • Others
    IEICE Transactions on Electronics Special Section on VLSI Design and CAD Algorithms, 2015
  • Others
    International Conference on Solid State Devices and Materials TPC Secretary, 2015 - 2017
  • Others
    Asia and South Pacific Design Automation Conference University Design Contest TPC Member, 2015 - 2021
  • Others
    IEICE Transactions on Electronics Special Section on Solid-State Circuit Design - Architecture, Circuit, Device and Design Methodology, 2012