所属学会 8th International Symposium onAdvanced Science and Technology of Silicon Materials 2022 Vice Chair International Workshop on Gallium Oxide and Related Materials 2021 Local Arrangement Committee Chair 応用物理学会先進パワー半導体分科会 幹事 The Forum on the Science and Technology of Silicon Materials 2024 Chair 日本学術振興会第161委員会 運営委員 応用物理学会シリコンテクノロジー分科会 幹事 日本結晶成長学会 理事 日本学術振興会第145委員会 幹事/運営委員 日本フラックス成長研究会 応用物理学会シリコンテクノロジー分科会 応用物理学会結晶工学分科会 日本結晶成長学会 応用物理学会
論文 Growth of (100), (010) and (001) b-Ga2O3 single crystals by vertical Bridgman method J. Cryst. Growth,556:125990 2021(Feb. 15) Author:E. Ohba, T. Kobayashi, T. Taishi, K. Hoshikawa
Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth Applied Surface Science,513:145798 2020(Feb. 15) Author:K. Hyun, S.J. Kim, T. Taishi
Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth 2020(Feb. 15) Author:K. Hyun, S.J. Kim, T. Taishi
The effect of Al addition to a Cr solvent without molten Si on the surface morphology in a solution growth of SiC Japanese Journal of Applied Physics,59:025504(1-6) 2020(Jan. 09) Author:K. Suzuki, T. Taishi
TSSG 法によるSiC 結晶成長における溶液中の炭素濃度の経時変化と種子づけ後の結晶品質に与える影響 J. Flux Growth,14:25-29 2019(Jun. 30) Author:太子敏則，土本直道，高橋大，玄光龍，鈴木皓己
The effect of the structure of seed attachment on polytype and morphology in solution growth of SiC by TSSG method Mater. Sci. Forum,924:35-38 2018(Jun.) Author:K. Suzuki, K. Hyun, T. Taishi
Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M=Transition Metals) Solvents for the Solution Growth of SiC Mater. Sci. Forum,924:43-46 2018(Jun.) Author:K. Hyun, T. Taishi, K. Teshima
Solution growth of SiC from the crucible bottom with dipping under unsaturation state of carbon in solvent Mater. Sci. Forum,924:51-54 2018(Jun.) Author:T. Taishi，M. Takahashi，N. Tsuchimoto，K. Suzuki, K. Hyun
Anisotropy of ionic conduction in single-crystal LixLa(1%x)/3NbO3 solid electrolyte grown by directional solidification Jpn. J. Appl. Phys.,55:090306-1-090306-3 2016(Sep.) Author:Y. Fujiwara, T. Taishi, K. Hoshikawa, K. Kohama, H. Iba
The Growth of Potassium Tantalate Niobate (KTaxNb1-xO3) Single Crystal by Vertical Bridgman Method Additive Manufacturing and Strategic Technologies in Advanced Ceramics: Ceramic Transactions,258:105-112 2016(Aug.) Author:T. Taishi, K. Hosokawa, K. Hoshikawa, T. Kojima, J. Osada, M. Sasaura, Y. Furukawa, T. Komatsu
Colony structure in Ce-doped Al2O3/YAG eutectic systems grown by vertical Bridgman technique J. Cryst. Growth,448:1-5 2016(Jul.) Author:S. Yamada, M. Yoshimura, S. Sakata, T. Taishi, K. Hoshikawa
Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor SOLAR ENERGY MATERIALS AND SOLAR CELLS,140:312-319 2015(Sep.) Author:Htay, MT; Mandokoro, T; Seki, H; Sakaizawa, T; Momose, N; Taishi, T; Hashimoto, Y; Ito, K
The growth of Al2O3/YAG:Ce melt growth composite by the vertical Bridgman technique using an a-axis Al2O3 seed J. Cryst. Growth,427:16-20 2015 Author:Masafumi Yoshimura, Shin-ichi Sakata, Seiya Yamada, Toshinori Taishi, Keigo Hoshikawa
Vertical Bridgman growth of sapphire crystals, with thin-neck formation process JOURNAL OF CRYSTAL GROWTH,401:146-149 2014(Sep. 01) Author:Hoshikawa, K; Taishi, T; Ohba, E; Miyagawa, C; Kobayashi, T; Yanagisawa, J; Shinozuka, M
Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals J. Cryst. Growth,401:388-391 2014(Sep. 01) Author:T.Taishi, T.Kobayashi, M.Shinozuka, E.Ohba, C.Miyagawa, K.Hoshikawa
Constitutional supercooling in heavily As-doped Czochralski Si crystal growth J. Cryst. Growth,393:42-44 2014(May 01) Author:T. Taishi, Y. Ohno, I. Yonenaga
Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation J. Cryst. Growth,402:83-89 2014 Author:C. Miyagawa, T. Kobayashi, T. Taishi, K. Hoshikawa
Growth of potassium tantalate (KTaO3) crystalsby directional solidification J. Cryst. Growth,380:39-42 2013(Oct. 01) Author:Toshinori Taishi, Takayuki Takenaka,Kazuya Hosokawa,Noriko Bamba,Keigo Hoshikawa
Demonstration of crack-free c-axis sapphire crystal growth using the vertical Bridgman method J. Cryst. Growth,372:95-99 2013 Author:Chihiro Miyagawa, Takumi Kobayashi, Toshinori Taishi, Keigo Hoshikawa
Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3 J. Cryst. Growth,360:47-51 2012(Dec. 01) Author:T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa and I.Yonenaga
Growth and characterization of germanium crystals from B2O3-coverd melt ,2012 3CG Collaborative Conference on Crystal Growth 2012(Dec.) Author:T. Taishi
Fabrication of flower-shaped Bi(2)O(3) superstructure by a facile template-free process APPLIED SURFACE SCIENCE,257(15):6577-6582 2011(May) Author:Zhang, Li; Hashimoto, Yoshio; Taishi, Toshinori; Nakamura, Isao; Ni, Qing-Qing
Oxygen doped Ge crystals Czochralski-grown from the B2O3-fully-covered melt Miroelectro. Eng.,88:496-498 2011(Feb.) Author:T. Taishi, Y. Ohno, I. Yonenaga
Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities J. Cryst. Growth,312:2783-2787 2010(Jun.) Author:T. Taishi, H. Ise, Y. Murao, T. Osawa, M. Suezawa, Y. Tokumoto, Y. Ohno, K. Hoshikawa and I. Yonenaga
Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth Physica B,404:4612-4615 2009(Dec.) Author:T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga
Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt J. Cryst Growth,311:4615-4618 2009(Jun.) Author:T. Taishi, Y. Ohno, I. Yonenaga
Generation and suppression of misfit dislocations at the seed/crystal interface in Si bulk crystal growth Phys. Stat. Sol. (C),6:1886-1891 2009(Jun.) Author:T. Taishi, K. Hoshikawa, Y. Ohno and I. Yonenaga
Single cyrystal growth of langataite (La3Ta0.5Ga5.5O14) by vertical Bridgman (VB) method along [21-1-0]in air and an Ar atmosphere J. Cryst Growth,311:205-208 2008(Dec.) Author:T. Taishi, N. Bamba, K. Hoshikawa and I. Yonenaga
High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors J. Appl. Phys.,103:093502(1-4) 2008(May) Author:I. Yonenaga, H. Koizumi, Y. Ohno and T. Taishi
Si multicrystals grown by the Czochralski method with multi-seeds J. Cryst. Growth,307:466-471 2007(Jul.) Author:T. Hoshikawa, T. Taishi, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa
Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime J. Cryst. Growth,306:452-457 2007(May) Author:T. Taishi, T. Hoshikawa, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa
Single-crystal growth of langasite (La3Ga5SiO14) by the vertical Bridgman (VB) method in air and in an Ar atmosphere J. Cryst. Growth,304:4-6 2007(Mar.) Author:T. Taishi, T. Hayashi, T. Fukami, K. Hoshikawa and I. Yonenaga
Solution growth of SiC -Unique approach by vertical-Bridgman-like technique- Third International Workshop on Advanced Functional Nanomaterials 2015(Dec.) Presenter:Toshinori Taishi
Growth of potassium tantalate niobate (KTaxNb1-xO3: KTN) crystals by the vertical Bridgman (VB) method 11th International Conference on Ceramic Materials and Components for Energy and Environmental Applications 2015 Presenter:Toshinori Taishi, Kazuya Hosokawa, Keigo Hoshikawa, Takahiro Kojima, Junya Osada, Masahiro Sasaura, Yasunori Furukawa, Takayuki Komatsu
Czochralski germanium crystal growth with low dislocation density and oxygen impurities TheForum on the Science and Technology of Silicon Materials 2010 2010(Nov.) Presenter:T. Taishi
研究者総覧
