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TAISHI Toshinori

Academic OrganizationAcademic Assembly School of Science and Technology Institute of EngineeringTEL
Education and Research OrganizationFaculty of Engineering Electrical and Computer EngineeringFAX
PositionProfessorMail Address
Address4-17-1, Wakasato, Nagano 380-8553Web site


Research Field
Applied materials
Crystal engineering
Keywords:Crystal growth , Evaluation of crystalline defects , Silicon , Germanium , Oxide crystals
Current Subject
Keywords:Silicon , single crystal growth , dislocation , 2021-2025
Study on polycrystalline SiC coating
Keywords:Silicon carbide , coating , 多結晶膜 , 2019-2022
Crystal growth of beta-gallium oxide
Keywords:Gallium oxide , crystal growth , 転位密度 , 電気的特性 , 2016-2025
Crystal growth of complete solid solution materials
Keywords:Complete solid solution , crystal growth , 傾斜組成分布 , 2013-2018
Solution growth of silicon carbide
Keywords:Silicon carbide , Solution growth , 炭素溶解 , 輸送解析 , 2012-2022
High quality germanium crystal growth
Keywords:Germanium , crystal growth , dislocation , mechanical strength , 2006-2013
Oxide crystal growth by vertical Bridgman method
Keywords:Oxide crystals , crystal growth , vertical Bridgman , 2003-2006
Czochralski growth of silicon crystals and evaluation of crystalline defects
Keywords:Silicon , crystal growth , Czochralsk , dislocation , defects , 1998-2003
Academic Societies
Academic Societies
International Workshop on Gallium Oxide and Related Materials 2021 Local Arrangement Committee Chair
応用物理学会先進パワー半導体分科会 幹事
The Forum on the Science and Technology of Silicon Materials 2024 Chair
日本学術振興会第161委員会 運営委員
応用物理学会シリコンテクノロジー分科会 幹事
日本結晶成長学会 理事
日本学術振興会第145委員会 幹事/運営委員
Academic Background
Graduate School
信州大学 , (材料工学専攻 , 工学研究科) , 2001
長岡技術科学大学 , (生物機能工学専攻 , 工学研究科) , 1998

博士(工学) , 信州大学
2009 , 本多記念会 第49回原田研究奨励賞
2003 , 第33回日本結晶成長学会 論文賞
2002 , 第32回日本結晶成長学会 講演奨励賞
1999 , 平成11年度日本物理学会北陸支部応用物理学会北陸・信越支部合同講演会 講演奨励賞
Research Career
Research Career
2021- , 信州大学工学部電子情報システム工学科 教授
2011-2021 , 信州大学工学部 准教授
2009-2011 , 信州大学カーボン科学研究所 助教
2006-2009 , 東北大学金属材料研究所 助教
2004-2006 , 信州大学教育学部産学官連携研究員
2001-2004 , 日本学術振興会特別研究員(PD)


Books, Articles, etc.
Lithiation/delithiation of silicon heavily doped with boron synthesized using the Czochralski process
Energy Adv.,,2:813 2023(Apr.)
Author:M. Shimizu, K. Kimoto, A. Kikuchi, T. Taishi, S. Arai

Line-shaped defects in β-Ga2O3 crystals grown by the vertical Bridgman (VB) method
Jpn. J. Appl. Phys.,62:SF1025 2023(Mar.)
Author:T. Taishi, N. Kobayashi, E. Ohba, K. Hoshikawa

Polycrystalline SiC coating on large-sized SiC ceramics using Si vapor
J. Ceram. Soc. Japan,129(12):1-7 2021(Sep.)
Author:Yuuki KAGAMI, Syuuichi YAMAMOTO, Yuta YOKOBAYASHI, Ryunosuke,UCHIDA, Koki SUZUKI, Seiichi TARUTA and Toshinori TAISHI

Dopant Effect on Lithiation/Delithiation of Highly Crystalline Silicon Synthesized Using the Czochralski Process
Appl. Energy Matter.,4:7922 2021(Jul.)
Author:M. Shimizu, K. Kimoto, T. Kawai, T. Taishi, S. Arai

Growth of (100), (010) and (001) b-Ga2O3 single crystals by vertical Bridgman method
J. Cryst. Growth,556:125990 2021(Feb.)
Author:E. Ohba, T. Kobayashi, T. Taishi, K. Hoshikawa

日本結晶成長学会誌,47(2):47-2-05 2020(Jul.)
Author:宇田聡, 川瀬智博, 太子敏則

日本結晶成長学会誌,47(2):47-2-01 2020(Jul.)

Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth
Applied Surface Science,513:145798 2020(Feb.)
Author:K. Hyun, S.J. Kim, T. Taishi

Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth
Author:K. Hyun, S.J. Kim, T. Taishi

The effect of Al addition to a Cr solvent without molten Si on the surface morphology in a solution growth of SiC
Japanese Journal of Applied Physics,59:025504(1-6) 2020(Jan.)
Author:K. Suzuki, T. Taishi

The effect of the structure of seed attachment on polytype and morphology in solution growth of SiC by TSSG method
Mater. Sci. Forum,924:35-38 2018(Jun.)
Author:K. Suzuki, K. Hyun, T. Taishi

Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M=Transition Metals) Solvents for the Solution Growth of SiC
Mater. Sci. Forum,924:43-46 2018(Jun.)
Author:K. Hyun, T. Taishi, K. Teshima

Solution growth of SiC from the crucible bottom with dipping under unsaturation state of carbon in solvent
Mater. Sci. Forum,924:51-54 2018(Jun.)
Author:T. Taishi,M. Takahashi,N. Tsuchimoto,K. Suzuki, K. Hyun

日本結晶成長学会誌,43:23-31 2016(Oct.)

Anisotropy of ionic conduction in single-crystal LixLa(1%x)/3NbO3 solid electrolyte grown by directional solidification
Jpn. J. Appl. Phys.,55:090306-1-090306-3 2016(Sep.)
Author:Y. Fujiwara, T. Taishi, K. Hoshikawa, K. Kohama, H. Iba

The Growth of Potassium Tantalate Niobate (KTaxNb1-xO3) Single Crystal by Vertical Bridgman Method
Additive Manufacturing and Strategic Technologies in Advanced Ceramics: Ceramic Transactions,258:105-112 2016(Aug.)
Author:T. Taishi, K. Hosokawa, K. Hoshikawa, T. Kojima, J. Osada, M. Sasaura, Y. Furukawa, T. Komatsu

Colony structure in Ce-doped Al2O3/YAG eutectic systems grown by vertical Bridgman technique
J. Cryst. Growth,448:1-5 2016(Jul.)
Author:S. Yamada, M. Yoshimura, S. Sakata, T. Taishi, K. Hoshikawa

Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor
Author:Htay, MT; Mandokoro, T; Seki, H; Sakaizawa, T; Momose, N; Taishi, T; Hashimoto, Y; Ito, K

The growth of Al2O3/YAG:Ce melt growth composite by the vertical Bridgman technique using an a-axis Al2O3 seed
J. Cryst. Growth,427:16-20 2015
Author:Masafumi Yoshimura, Shin-ichi Sakata, Seiya Yamada, Toshinori Taishi, Keigo Hoshikawa

Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals
J. Cryst. Growth,401:388-391 2014(Sep. 01)
Author:T.Taishi, T.Kobayashi, M.Shinozuka, E.Ohba, C.Miyagawa, K.Hoshikawa

Vertical Bridgman growth of sapphire crystals, with thin-neck formation process
JOURNAL OF CRYSTAL GROWTH,401:146-149 2014(Sep.)
Author:Hoshikawa, K; Taishi, T; Ohba, E; Miyagawa, C; Kobayashi, T; Yanagisawa, J; Shinozuka, M

Constitutional supercooling in heavily As-doped Czochralski Si crystal growth
J. Cryst. Growth,393:42-44 2014(May 01)
Author:T. Taishi, Y. Ohno, I. Yonenaga

Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation
J. Cryst. Growth,402:83-89 2014
Author:C. Miyagawa, T. Kobayashi, T. Taishi, K. Hoshikawa

Growth of potassium tantalate (KTaO3) crystalsby directional solidification
J. Cryst. Growth,380:39-42 2013(Oct. 01)
Author:Toshinori Taishi, Takayuki Takenaka,Kazuya Hosokawa,Noriko Bamba,Keigo Hoshikawa

Demonstration of crack-free c-axis sapphire crystal growth using the vertical Bridgman method
J. Cryst. Growth,372:95-99 2013
Author:Chihiro Miyagawa, Takumi Kobayashi, Toshinori Taishi, Keigo Hoshikawa

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3
J. Cryst. Growth,360:47-51 2012(Dec. 01)
Author:T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa and I.Yonenaga

Growth and characterization of germanium crystals from B2O3-coverd melt
,2012 3CG Collaborative Conference on Crystal Growth 2012(Dec.)
Author:T. Taishi

Fabrication of flower-shaped Bi(2)O(3) superstructure by a facile template-free process
APPLIED SURFACE SCIENCE,257(15):6577-6582 2011(May)
Author:Zhang, Li; Hashimoto, Yoshio; Taishi, Toshinori; Nakamura, Isao; Ni, Qing-Qing

Oxygen doped Ge crystals Czochralski-grown from the B2O3-fully-covered melt
Miroelectro. Eng.,88:496-498 2011(Feb.)
Author:T. Taishi, Y. Ohno, I. Yonenaga

Mild hydrothermal treatment to prepare highly dispersed multi-walled carbon nanotubes
APPLIED SURFACE SCIENCE,257(6):1845-1849 2011(Jan.)
Author:Zhang, Li; Hashimoto, Yoshio; Taishi, Toshinori; Ni, Qing-Qing

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities
J. Cryst. Growth,312:2783-2787 2010(Jun.)
Author:T. Taishi, H. Ise, Y. Murao, T. Osawa, M. Suezawa, Y. Tokumoto, Y. Ohno, K. Hoshikawa and I. Yonenaga

まてりあ,48:625 2009(Dec.)
Author:大野裕, 太子敏則, 徳本有紀, 米永一郎

Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth
Physica B,404:4612-4615 2009(Dec.)
Author:T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga

Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt
J. Cryst Growth,311:4615-4618 2009(Jun.)
Author:T. Taishi, Y. Ohno, I. Yonenaga

Generation and suppression of misfit dislocations at the seed/crystal interface in Si bulk crystal growth
Phys. Stat. Sol. (C),6:1886-1891 2009(Jun.)
Author:T. Taishi, K. Hoshikawa, Y. Ohno and I. Yonenaga

Single cyrystal growth of langataite (La3Ta0.5Ga5.5O14) by vertical Bridgman (VB) method along [21-1-0]in air and an Ar atmosphere
J. Cryst Growth,311:205-208 2008(Dec.)
Author:T. Taishi, N. Bamba, K. Hoshikawa and I. Yonenaga

High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors
J. Appl. Phys.,103:093502(1-4) 2008(May)
Author:I. Yonenaga, H. Koizumi, Y. Ohno and T. Taishi

日本結晶成長学会誌,34:17-22 2008(Apr.)
Author:干川圭吾, 太子敏則, 黄新明

まてりあ,46:823 2007(Dec.)

Si multicrystals grown by the Czochralski method with multi-seeds
J. Cryst. Growth,307:466-471 2007(Jul.)
Author:T. Hoshikawa, T. Taishi, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa

Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime
J. Cryst. Growth,306:452-457 2007(May)
Author:T. Taishi, T. Hoshikawa, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa

Single-crystal growth of langasite (La3Ga5SiO14) by the vertical Bridgman (VB) method in air and in an Ar atmosphere
J. Cryst. Growth,304:4-6 2007(Mar.)
Author:T. Taishi, T. Hayashi, T. Fukami, K. Hoshikawa and I. Yonenaga

Segregation and constitutional supercooling in heavily doped silicon single crystal growth by Czochralski method
The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, 2023(Jun. 05)
Presenter:Toshinori Taishi

Solution growth of SiC -Unique approach by vertical-Bridgman-like technique-
Third International Workshop on Advanced Functional Nanomaterials 2015(Dec.)
Presenter:Toshinori Taishi

Growth of potassium tantalate niobate (KTaxNb1-xO3: KTN) crystals by the vertical Bridgman (VB) method
11th International Conference on Ceramic Materials and Components for Energy and Environmental Applications 2015
Presenter:Toshinori Taishi, Kazuya Hosokawa, Keigo Hoshikawa, Takahiro Kojima, Junya Osada, Masahiro Sasaura, Yasunori Furukawa, Takayuki Komatsu

SiC溶液成長 ~溶剤添加効果と炭素の溶解・輸送・成長のバランス~
応用物理学会第1回先進パワー半導体分科会 2014(Nov. 20)

まてりあ 50 10 431 2011(May)

Czochralski germanium crystal growth with low dislocation density and oxygen impurities
TheForum on the Science and Technology of Silicon Materials 2010 2010(Nov.)
Presenter:T. Taishi

Themes for Joint Research