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TAISHI Toshinori

Academic OrganizationAcademic Assembly School of Science and Technology Institute of EngineeringTEL
Education and Research OrganizationInterdisciplinary Cluster for Cutting Edge Research, Center for Energy and Environmental ScienceFAX
PositionAssociate ProfessorMail Address
Address4-17-1, Wakasato, Nagano 380-8553Web site

Profile

Research Field
Applied materials
Crystal engineering
Current Subject
High quality germanium crystal growth
Keywords:Germanium , crystal growth , dislocation , mechanical strength , 2006-2013
Oxide crystal growth by vertical Bridgman method
Keywords:Oxide crystals , crystal growth , vertical Bridgman , 2003-2006
Solution growth of silicon carbide
Keywords:Silicon carbide , Solution growth , 2002-2004
Crystal growth of complete solid solution materials
Keywords:Complete solid solution , crystal growth , 2002-2004
Crystal growth of beta-gallium oxide
Keywords:Gallium oxide , crystal growth , 2002-2004
Czochralski growth of silicon crystals and evaluation of crystalline defects
Keywords:Silicon , crystal growth , Czochralsk , dislocation , defects , 1998-2003
Academic Background
Graduate School
2001
1998
Awards
2009
2003
2002
1999
Research Career
Research Career
2009-2011
2006-2009
2004-2006
2001-2004

Research

Books, Articles, etc.
Articles
垂直ブリッジマン法によるタンタル酸ニオブ酸カリウム(KTN)単結晶の育成と組成均一化
日本結晶成長学会誌,43:23-31 2016(Oct.)
Author:太子敏則、干川圭吾、小島孝広、笹浦正弘、小松貴幸


Anisotropy of ionic conduction in single-crystal LixLa(1%x)/3NbO3 solid electrolyte grown by directional solidification
Jpn. J. Appl. Phys.,55:090306-1-3 2016(Sep.)
Author:Y. Fujiwara, T. Taishi, K. Hoshikawa, K. Kohama, H. Iba


The Growth of Potassium Tantalate Niobate (KTaxNb1-xO3) Single Crystal by Vertical Bridgman Method
Additive Manufacturing and Strategic Technologies in Advanced Ceramics: Ceramic Transactions,258:105-112 2016(Aug.)
Author:T. Taishi, K. Hosokawa, K. Hoshikawa, T. Kojima, J. Osada, M. Sasaura, Y. Furukawa, T. Komatsu


Colony structure in Ce-doped Al2O3/YAG eutectic systems grown by vertical Bridgman technique
J. Cryst. Growth,448:1-5 2016(Jul.)
Author:S. Yamada, M. Yoshimura, S. Sakata, T. Taishi, K. Hoshikawa


Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor
SOLAR ENERGY MATERIALS AND SOLAR CELLS,140:312-319 2015(Sep.)
Author:Htay, MT; Mandokoro, T; Seki, H; Sakaizawa, T; Momose, N; Taishi, T; Hashimoto, Y; Ito, K


The growth of Al2O3/YAG:Ce melt growth composite by the vertical Bridgman technique using an a-axis Al2O3 seed
J. Cryst. Growth,427:16-20 2015
Author:Masafumi Yoshimura, Shin-ichi Sakata, Seiya Yamada, Toshinori Taishi, Keigo Hoshikawa


Vertical Bridgman growth of sapphire crystals, with thin-neck formation process
JOURNAL OF CRYSTAL GROWTH,401:146-149 2014(Sep. 01)
Author:Hoshikawa, K; Taishi, T; Ohba, E; Miyagawa, C; Kobayashi, T; Yanagisawa, J; Shinozuka, M


Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals
J. Cryst. Growth,401:388-391 2014(Sep. 01)
Author:T.Taishi, T.Kobayashi, M.Shinozuka, E.Ohba, C.Miyagawa, K.Hoshikawa


Constitutional supercooling in heavily As-doped Czochralski Si crystal growth
J. Cryst. Growth,393:42-44 2014(May 01)
Author:T. Taishi, Y. Ohno, I. Yonenaga


Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation
J. Cryst. Growth,402:83-89 2014
Author:C. Miyagawa, T. Kobayashi, T. Taishi, K. Hoshikawa


Growth of potassium tantalate (KTaO3) crystalsby directional solidification
J. Cryst. Growth,380:39-42 2013(Oct. 01)
Author:Toshinori Taishi, Takayuki Takenaka,Kazuya Hosokawa,Noriko Bamba,Keigo Hoshikawa


Demonstration of crack-free c-axis sapphire crystal growth using the vertical Bridgman method
J. Cryst. Growth,372:95-99 2013
Author:Chihiro Miyagawa, Takumi Kobayashi, Toshinori Taishi, Keigo Hoshikawa


Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3
J. Cryst. Growth,360:47-51 2012(Dec. 01)
Author:T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa and I.Yonenaga


Growth and characterization of germanium crystals from B2O3-coverd melt
,2012 3CG Collaborative Conference on Crystal Growth 2012(Dec.)
Author:T. Taishi


Fabrication of flower-shaped Bi(2)O(3) superstructure by a facile template-free process
APPLIED SURFACE SCIENCE,257(15):6577-6582 2011(May)
Author:Zhang, Li; Hashimoto, Yoshio; Taishi, Toshinori; Nakamura, Isao; Ni, Qing-Qing


Oxygen doped Ge crystals Czochralski-grown from the B2O3-fully-covered melt
Miroelectro. Eng.,88:496-498 2011(Feb.)
Author:T. Taishi, Y. Ohno, I. Yonenaga


Mild hydrothermal treatment to prepare highly dispersed multi-walled carbon nanotubes
APPLIED SURFACE SCIENCE,257(6):1845-1849 2011(Jan.)
Author:Zhang, Li; Hashimoto, Yoshio; Taishi, Toshinori; Ni, Qing-Qing


Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities
J. Cryst. Growth,312:2783-2787 2010(Jun.)
Author:T. Taishi, H. Ise, Y. Murao, T. Osawa, M. Suezawa, Y. Tokumoto, Y. Ohno, K. Hoshikawa and I. Yonenaga


Opto-TEM法によるZnO中の転位の光学応答解析
まてりあ,48:625 2009(Dec.)
Author:大野裕, 太子敏則, 徳本有紀, 米永一郎


Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth
Physica B,404:4612-4615 2009(Dec.)
Author:T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga


Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt
J. Cryst Growth,311:4615-4618 2009(Jun.)
Author:T. Taishi, Y. Ohno, I. Yonenaga


Generation and suppression of misfit dislocations at the seed/crystal interface in Si bulk crystal growth
Phys. Stat. Sol. (C),6:1886-1891 2009(Jun.)
Author:T. Taishi, K. Hoshikawa, Y. Ohno and I. Yonenaga


Single cyrystal growth of langataite (La3Ta0.5Ga5.5O14) by vertical Bridgman (VB) method along [21-1-0]in air and an Ar atmosphere
J. Cryst Growth,311:205-208 2008(Dec.)
Author:T. Taishi, N. Bamba, K. Hoshikawa and I. Yonenaga


High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors
J. Appl. Phys.,103:093502(1-4) 2008(May)
Author:I. Yonenaga, H. Koizumi, Y. Ohno and T. Taishi


無ネック無転位シリコン単結晶成長
日本結晶成長学会誌,34:17-22 2008(Apr.)
Author:干川圭吾, 太子敏則, 黄新明


トモ・トポグラフィ技術を併用した放射光白色トポグラフィによる転位の3D構造決定
まてりあ,46:823 2007(Dec.)
Author:川戸清爾、太子敏則、飯田敏、近浦吉則、梶原堅太郎


Si multicrystals grown by the Czochralski method with multi-seeds
J. Cryst. Growth,307:466-471 2007(Jul.)
Author:T. Hoshikawa, T. Taishi, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa


Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime
J. Cryst. Growth,306:452-457 2007(May)
Author:T. Taishi, T. Hoshikawa, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa


Single-crystal growth of langasite (La3Ga5SiO14) by the vertical Bridgman (VB) method in air and in an Ar atmosphere
J. Cryst. Growth,304:4-6 2007(Mar.)
Author:T. Taishi, T. Hayashi, T. Fukami, K. Hoshikawa and I. Yonenaga


Presentations
Solution growth of SiC -Unique approach by vertical-Bridgman-like technique-
Third International Workshop on Advanced Functional Nanomaterials 2015(Dec.)
Author:Toshinori Taishi


Growth of potassium tantalate niobate (KTaxNb1-xO3: KTN) crystals by the vertical Bridgman (VB) method
11th International Conference on Ceramic Materials and Components for Energy and Environmental Applications 2015
Author:Toshinori Taishi, Kazuya Hosokawa, Keigo Hoshikawa, Takahiro Kojima, Junya Osada, Masahiro Sasaura, Yasunori Furukawa, Takayuki Komatsu


SiC溶液成長 ~溶剤添加効果と炭素の溶解・輸送・成長のバランス~
応用物理学会第1回先進パワー半導体分科会 2014(Nov. 20)
Author:太子敏則、日根賢人


液状酸化ホウ素(B2O3)を用いた無転位・酸素添加ゲルマニウム結晶の育成
まてりあ , 50(10):431 2011(May)
Author:太子敏則、米永一郎


Czochralski germanium crystal growth with low dislocation density and oxygen impurities
TheForum on the Science and Technology of Silicon Materials 2010 2010(Nov.)
Author:T. Taishi

Patents
Patents
無転位シリコン単結晶の製造方法
ランガサイト系単結晶の作製方法及び作製装置並びにその単結晶を用いた燃焼圧センサ
低転位密度ゲルマニウム単結晶の製造方法
リチウムイオン電池用負極材料
ろ過器およびその製造方法ならびにこれを用いた金属回収方法
SiC単結晶の製造方法
SiC単結晶の製造方法