Ph.D Eng., The University of Tokyo

M. Eng., The University of Tokyo

B. Eng., The University of Tokyo

Electron device and electronic equipment, Electron device/Electronic equipment

2024
Professor, Department of Electrical and Computer Engineering, Shinshu University

2016 - 2024
Associate Professor, Department of Electrical and Computer Engineering, Shinshu University

2015 - 2016
Associate Professor, Department of Electrical and Electronic Engineering, Shinshu University

2013 - 2015
Assistant Professor, Department of Electrical and Electronic Engineering, Shinshu University

2012 - 2013
Assistant Professor, Research and Development Intiative, Chuo University

2010 - 2012
Assistant Professor, Institue of Industrial Science (IIS), The University of Tokyo

2009 - 2010
Researcher, Institue of Industrial Science (IIS), The University of Tokyo

2007 - 2008
日本学術振興会 特別研究員（DC2）

2003, The University of Tokyo, Faculty of Engineering, Department of Electronic Engineering

2008, The University of Tokyo, Graduate School of Engineering, Department of Electronic Engineering

2005, The University of Tokyo, Graduate School of Engineering, Department of Electronic Engineering

2023
ISSCC Far East Committee Officer, IEEE ISSCC

2023
SSDM Area 12 Vice Chair, JSAP

2021
ISSCC International Technical Program Committee, IEEE ISSCC

2020
SSDM Technical Program Committee Secretary, JSAP

2015 - 2018
SSDM Program Committee Secretary, JSAP

2014 - 2015
ASP-DAC2015 Design Contest Committee, ACM, IEEE, IEICE, IPSJ

2023
IEICE, IEICE Electronics Society Invited Paper Award 2023 (IEICE Transactions on Electronics)

2021
26th Asia and South Pacific Design Automation Conference (ASP-DAC) 2021, University LSI Design Contest, Special Feature Award

2019
24th Asia and South Pacific Design Automation Conference (ASP-DAC) 2019, University LSI Design Contest, Best Design Award

A 24V-to-1V integrated dual-charging path dual-inductor hybrid converter for improved step-up load transient response
Kazuya Nishijima, Toma Umeki, Kousuke Miyaji
Japanese Journal of Applied Physics, 62, SC1047, Feb. 2023

Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter
Kousuke Miyaji
IEICE Transactions on Electronics, E105-C(10), 521-533, Oct. 2022, Invited

A 65nm CMOS Process Li-ion Battery Charging Cascode SIDO Boost Converter with 89% Maximum Efficiency for RF Wireless Power Transfer Receiver
Yasuaki Isshiki, Dai Suzuki, Ryo Ishida, Kousuke Miyaji
IEICE Transactions on Electronics, 2019CTP0003, Apr. 2020

Integrated CMOS Switch Buck DC-DC Converter Fabricated in Organic Interposer with Embedded Magnetic Core Inductor
Tomoki Akiyama, Shu Ishida, Tomohiro Shirasawa, Takanobu Fukuoka, Shintaro Hara, Hiroshi Yoshida, Makoto Sonehara, Toshiro Sato, Kousuke Miyaji
Journal of the Magnetics Society of Japan, 43(3), 64-69, May 2019

Pseudo-differential CMOS analog front-end circuit for wide-bandwidth optical probe current sensor
Takaharu Uekura, Kousuke Oyanagi, Makoto Sonehara, Toshiro Sato, Kousuke Miyaji
Japanese Journal of Applied Physics, 57(4S), 04FF06, Mar. 2018

A compact perspiration meter system with capacitive humidity sensor for wearable health-care applications
Yusuke Mitani, Kousuke Miyaji, Satoshi Kaneko, Takaharu Uekura, Hideya Momose, Koh Johguchi
Japanese Journal of Applied Physics, 57(4S), 04FF10, Mar. 2018

A 190 mV start-up and 59.2% efficiency CMOS gate boosting voltage doubler charge pump in 0.18 um standard CMOS process for energy harvesting
Minori Yoshida, Kousuke Miyaji
Japanese Journal of Applied Physics, 57(4S), 04FF02, Feb. 2018

Number of traps and trap depth position on statistical distribution of random telegraph noise in scaled NAND flash memory
Toshihiro Tomita, Kousuke Miyaji
Japanese Journal of Applied Physics, 55(4S), 04EE08, Apr. 2016

Substrate Doping Concentration Dependence on Random Telegraph Noise Spatial and Statistical Distribution in 30nm NAND Flash Memory
Toshihiro Tomita, Kousuke Miyaji
Japanese Journal of Applied Physics, 54(4S), 04DD02, Apr. 2015

Hybrid triple-level-cell /multi-level-cell NAND flash storage array with chip exchangeable method
Shogo Hachiya, Koh Johguchi, Kousuke Miyaji, Ken Takeuchi
Japanese Journal of Applied Physics, 53(4S), 04EE04, Apr. 2014

Co-design of application software and NAND flash memory in solid-state drive for relational database storage system
Kousuke Miyaji, Chao Sun, Ayumi Soga, Ken Takeuchi
Japanese Journal of Applied Physics, 53(4S), 04EE09, Apr. 2014

A temperature tracking read reference current and write voltage generator for multi-level phase change memories
Koh Johguchi, Toru Egami, Kousuke Miyaji, Ken Takeuchi
IEICE Transactions on Electronics, E97-C(4), 342-350, Apr. 2014

A high performance and energy-efficient cold data eviction algorithm for 3D-TSV hybrid ReRAM/MLC NAND SSD
Chao Sun, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi
IEEE Transactions on Circuit and Systems I, 61(2), 382-392, Feb. 2014

Control gate length, spacing, channel hole diameter, and stacked layer number design for bit-cost scalable-type three-dimensional stackable NAND flash memory
Kousuke Miyaji, Yuki Yanagihara, Reo Hirasawa, Sheyang Ning, Ken Takeuchi
Japanese Journal of Applied Physics, 53(2), 024201, Jan. 2014

A 6T-SRAM With a Post-Process Electron Injection Scheme That Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy
Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano, Ken Takeuchi
IEEE Journal of Solid-State Circuits, 48(9), 2239-2249, Sep. 2013

Near Threshold Voltage Word-line Voltage Injection Self-Convergence Scheme for Local Electron Injected Asymmetric Pass Gate Transistor 6T-SRAM
Kousuke Miyaji Yasuhiro Shinozuka, Shinji Miyano, Ken Takeuchi
IEEE Trans. Circuit and Systems I, 59(8), 1635-1643, Aug. 2012

Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in sub-20nm Bulk/SOI NAND Flash Memory
Kousuke Miyaji, Chinglin Hung, Ken Takeuchi
Japanese Journal of Applied Physics, 51(4), 04DD12, Apr. 2012

Zero Additional Process, Local Charge Trap, Embedded Flash Memory with Drain-side Assisted Erase Scheme Using Minimum Channel Length/Width Standard CMOS Single Transistor Cell
Kousuke Miyaji, Yasuhiro Shinozuka, Ken Takeuchi
Japanese Journal of Applied Physics, 51(4), 04DD02, Apr. 2012

Analysis of Operation Margin and Read Speed in 6T- and 8T-SRAM with Local Electron Injected Asymmetric Pass Gate Transistor
Kousuke Miyaji, Kentaro Honda, Shinji Miyano, Ken Takeuchi et al.
IEICE Transactions on Electronics, E95-C(4), 564-571, Apr. 2012

Initialize&and Weak-Program Erasing Scheme and Single-Pulse Programming Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive
Kousuke Miyaji, Ryoji Yajima, Shigeki Sakai, Ken Takeuchi et al.
IEICE Transactions on Electronics, E95-C(4), 609-616, Apr. 2012

Endurance Enhancement and High Speed Set/Reset of 50nm Generation HfO2–based Resistive Random Access Memory (ReRAM) Cell by Intelligent Set/Reset Pulse Shape Optimization and Verify Scheme
Kazuhide Higuchi, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi
Japanese Journal of Applied Physics, 51(2), 02BD07, Apr. 2012

Improvement of Read Margin and its Distribution by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor Formed by Post-Process Local Electron Injection
Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda, Ken Takeuchi et al.
IEEE Journal of Solid-State Circuits, 46(9), 2180-2188, Sep. 2011

A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD
Kousuke Miyaji, Shinji Noda, Shigeki Sakai, Ken Takeuchi et al.
Solid-State Electronics, 58, 34-41, Jan. 2011

A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors
Shuhei Tanakamaru, Kousuke Miyaji, Shigeki Sakai, Ken Takeuchi et al.
Japanese Journal of Applied Physics, 49(12), 121501, Dec. 2010

A 1.2V Power Supply, 2.43 Times Power Efficient, Adaptive Charge Pump Circuit with Optimized VTH at Each Pump Stage for Ferroelectric (Fe)-NAND Flash Memories
Shinji Noda, Kousuke Miyaji, Shigeki Sakai, Ken Takeuchi et al.
Japanese Journal of Applied Physics, 49(4S), 04DD10, Apr. 2010

Silicon nanowire n-type metal-oxide-semiconductor field-effect transistors and single-electron transistors at room temperature under uniaxial tensile strain
Jeong YeonJoo, Kousuke Miyaji, Takuya Saraya, Toshiro Hiramoto
Journal of Applied Physics (JAP), 105(8), 084514, Jun. 2009

Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance-Voltage Method
Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Toshiro Hiramoto et al.
Japanese Journal of Applied Physics, 48(1), 011205, Jan. 2009

On the Origin of Negative Differential Conductance in Ultranarrow Wire Channel Silicon Single-Electron and Single-Hole Transistor
Masaharu Kobayashi, Kousuke Miyaji, Toshiro Hiramoto
Japanese Journal of Applied Physics, 47(3), 1813-1817, Mar. 2008

Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor
Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi, Toshiro Hiramoto
APPLIED PHYSICS LETTERS, 92(7), 073502, Feb. 2008

Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature
Kousuke Miyaji, Toshiro Hiramoto
APPLIED PHYSICS LETTERS, 91(5), 053509, Aug. 2007

Compact Analytical Model for Room-Temperature-Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels
Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
IEEE Transactions on Nanotechnology, 5(3), 167-173, May 2006

Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors
Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
APPLIED PHYSICS LETTERS, 88(14), 143505, Apr. 2006

Temperature Dependence of Off-Currentin Bulk and FD SOI MOSFETs
Kousuke Miyaji, Masumi Saitoh, Toshiharu Nagumo, Toshiro Hiramoto
Japanese Journal of Applied Physics, 44(4B), 2371-2375, Apr. 2005

科学情報出版株式会社
田代晋久、脇若弘之、佐藤敏郎、曽根原誠、水野勉、卜穎剛、宮地幸祐、中澤達夫、生稲弘明、笠井利幸, Joint work, 環境磁界発電-原理と設計法-
Mar. 2016

A 0.67A/mm2 Fully Package Integrated CMOS Class-D LC Oscillator Converter
Atsuya Kakuta, Kousuke Miyaji
International Conference on Solid State Devices and Materials(SSDM), N-7-01, Sep. 2024

A 64.4% Efficiency 5.8GHz RF Wireless Power Transfer Receiver with GaAs E-pHEMT Rectifier and 45.2μs MPPT Time SIDITO Buck-Boost Converter using VOC Prediction Scheme
Kyohei Ichikawa, Tatsuki Iwata, Saya Onishi, Tomohiro Higuchi, Yuya Hirose, Naoki Sakai, Kenji Itoh, and Kousuke Miyaji
IEEE International Solid-State Circuits Conference (ISSCC), Feb. 2024

A Collaboration from High Frequency Soft Magnetic Materials to Integrated Circuit Design for beyond 10MHz Switching Power Supply
Kousuke Miyaji, Makoto Sonehara, and Toshiro Sato
IEEE International Magnetics Conference 2023 (INTERMAG2023), FA-06, May 2023

A Design Methodology for 30MHz Fe-based Metal Composite Core Isolation Power Transformer and LLC Resonant Converter
Mizuki Muramatsu, Jun Kawasaki, Kazuhiro Shimura, Nanami Kawada, Mitsuhide Sato, Makoto Sonehara, Toshiro Sato, Tsutomu Mizuno, and Kousuke Miyaji
International Symposium on Integrated Magnetics 2023 (iSIM 2023), p. 45, May 2023., May 2023

A 289nH 20MHz Isolation Planar Power Transformer with Fe-based Metal Composite Magnetic Core
Jun Kawasaki, Kazuhiro Shimura, Mizuki Muramatsu, Nanami Kawada, Mitsuhide Sato, Makoto Sonehara, Toshiro Sato, Tsutomu Mizuno, and Kousuke Miyaji
International Symposium on Integrated Magnetics 2023 (iSIM 2023), p. 46, May 2023

Crossed Anisotropy Multilayered Nanogranular Films Combining High Permeability, Ferromagnetic Resonance Frequency, and Resistivity
Masayuki Naoe, Makoto Sonehara, Kousuke Miyaji, Toshiro Sato, Yasushi Endo, Nobuyuki Kobayashi, and Ken-Ichi Arai
IEEE International Magnetics Conference 2023 (INTERMAG2023), VPB-14, May 2023

A 15MHz GaN FET AZVT Buck Converter that Achieves 7.2-point Efficiency Increase at Heavy Load
Motohiro Kanai, Hidetoshi Taki, Kyohei Tanimura, Kousuke Miyaji
IEEE Energy Conversion Congress & Exposition (ECCE), 0367, Oct. 2022

A 24V-to-1V On-Chip Switch Dual-Charging Path Dual-Inductor Hybrid Converter Achieving Improved Load Transient Response
Kazuya Nishijima, Toma Umeki, Kousuke Miyaji
International Conference on Solid State Devices and Materials (SSDM) 794–795, Sep. 2022

3D-Integrated Beyond-10MHz Buck Converter with Fe-based Metal Composite Magnetic Core Inductor
Kousuke Miyaji, Makoto Sonehara, Toshiro Sato
IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), T5B.5, Aug. 2022

Fundamentals of High Frequency DC-DC Converters
Kousuke Miyaji
IEEE International Solid-State Circuits Conference (ISSCC) 2022 Tutorial, Feb. 2022

A 5.7GHz RF Wireless Power Transfer Receiver Using 84.5% Efficiency 12V SIDO Buck-Boost DC-DC Converter with Internal Power Supply Mode
Tomohiro Higuchi, Dai Suzuki, Ryo Ishida, Yasuaki Isshiki, Kazuki Arai, Kohei Onizuka, Kousuke Miyaji
IEEE Asian Solid-State Circuits Conference (A-SSCC) 2.4-1-3, Nov. 2021

3D-Integrated Magnetics using Fe-based Metal Composite Materials for Beyond-10MHz Switching Power Supply
Kousuke Miyaji
2021 International Workshop on Power Supply On Chip (PwrSoC) 3.2, Oct. 2021

A 24V VIN 5-to-20V VOUT 10MHz 2-Phase GaN DC-DC Buck Converter with CF-AOOT Control for Wide Range Voltage Conversion Ratio
Motohiro Kanai, Ryuya Maki, Norifumi Matsuda, Kyohei Tanimura, Hidetoshi Taki, Kousuke Miyaji
International Conference on Solid State Devices and Materials (SSDM) 714-715, Sep. 2021

A 65nm CMOS Process Li-ion Battery Charging Cascode SIDO Boost Converter with 89% Maximum Efficiency for RF Wireless Power Transfer Receiver
Yasuaki Isshiki, Dai Suzuki, Ryo Ishida, Kousuke Miyaji
Asia and South Pacific Design Automation Conferenece 91-92, Jan. 2021

A 65nm CMOS Process 4.2V Battery Charging Cascode SIDO Boost Converter with 87% Maximum Efficiency for RF Wireless Power Transfer Receiver
Yasuaki Isshiki, Dai Suzuki, Ryo Ishida, Kousuke Miyaji
International Conference on Solid State Devices and Materials (SSDM) 535-536, Sep. 2019

An 86% Efficiency, 20MHz, 3D-Integrated Buck Converter with Magnetic Core Inductor Embedded in Interposer Fabricated by Epoxy/Magnetic-Filler Composite Build-Up Sheet
Takanobu Fukuoka, Yuki Karasawa, Tomoki Akiyama, Ryoutaro Oka, Shu Ishida, Tomohiro Shirasawa, Makoto Sonehara, Toshiro Sato, Kousuke Miyaji
IEEE Applied Power Electronics Conference and Exposition (APEC) 1561-1566, Mar. 2019

A CMOS integrated sweat monitoring system for medical applications
Tera Sakata, Yusuke Mitani, Kousuke Miyaji, Satoshi Kaneko, Takaharu Uekura, Hidetoshi Taki, Hideya Momose, Koh Johguchi
International Symposium on Devices, Circuits (ISDCS) 9-2, Mar. 2019

A Wide Conversion Ratio, 92.8% Efficiency, 3-Level Buck Converter with Adaptive On/Off-Time Control and Shared Charge Pump Intermediate Voltage Regulator
Kousuke Miyaji, Yuki Karasawa, Takanobu Fukuoka
Asia and South Pacific Design Automation Conferenece 1A-1, Jan. 2019

A 92.8% Efficiency Adaptive-On/Off-Time Control 3-Level Buck Converter for Wide Conversion Ratio with Shared Charge Pump Intermediate Voltage Regulator
Yuki Karasawa, Takanobu Fukuoka, Kousuke Miyaji
IEEE Symposium on VLSI Circuits 227-228, Jun. 2018

A compact sweat monitoring system with CMOS capacitive humidity sensor for wearable health-care application
Yusuke Mitani, Kousuke Miyaji, Satoshi Kaneko, Takaharu Uekura, Hideya Momose, Koh Johguchi
International Conference on Solid State Devices and Materials (SSDM) 261-262, Sep. 2017

A 120dBohm 16MHz Pseudo Differential CMOS Analog Front End Circuit for Optical Probe Current Sensor
Takaharu Uekura, Kousuke Oyanagi, Makoto Sonehara, Toshiro Sato, Kousuke Miyaji
International Conference on Solid State Devices and Materials (SSDM) 351-352, Sep. 2017

A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Technique in 0.18um Standard CMOS Process for Energy Harvesting
Minori Yoshida, Kousuke Miyaji
International Conference on Solid State Devices and Materials (SSDM) 509-510, Sep. 2017

Comparisons of Wire Bonding and Flip-Chip Bonding Assembly in High Frequency Hysteretic DC-DC Buck Converters
Yuki Karasawa, Yusuke Gotou, Shintaro Hara, Takanobu Fukuoka, Kousuke Miyaji
International Conference on Solid State Devices and Materials (SSDM) 513-514, Sep. 2017

A ZVS active diode rectifier for wireless power transmission using voltage-time-conversion DLL
Kousuke Miyaji, Hideki Shinohara
IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) TH_1A_1, Aug. 2017

A 13.56MHz CMOS Active Diode Full-Wave Rectifier Achieving ZVS with Voltage-Time-Conversion Delay-Locked Loop for Wireless Power Transmission
Keita Yogosawa, Hideki Shinohara, Kousuke Miyaji
Asia and South Pacific Design Automation Conferenece 27-28, Jan. 2017

A ZVS CMOS Active Diode Rectifier with Voltage-Time-Conversion　Delay-Locked Loop for Wireless Power Transmission
Hideki Shinohara, Kousuke Miyaji
IEEE Asian Solid-State Circuits Conference (A-SSCC) 15-3, Nov. 2015

Effects of Cell Vth State and Number of Traps on Statistical Distribution of Random Telegraph Noise in Scaled NAND Flash Memory
Toshihiro Tomita, Kousuke Miyaji
International Conference on Solid State Devices and Materials (SSDM) 1188-1189, Sep. 2015

Substrate Doping Concentration Dependence on Random Telegraph Noise Spatial and Statistical Distribution in 30nm NAND Flash Memory
Toshihiro Tomita, Kousuke Miyaji
International Conference on Solid State Devices and Materials (SSDM) 462-463, Sep. 2014

3D-Integrated Storage Class Memory/NAND Flash Hybrid SSDs for Cloud Data Centers
Shun Okamoto, Chao Sun, Shogo Hachiya, Koh Johguchi, Kousuke Miyaji, Ken Takeuchi
Non-Volatile Memories Workshop (NVMW) Poster 64, Mar. 2014

Co-Design of Application Software and NAND Flash Memory for Database Storage System
Kousuke Miyaji, Chao Sun and Ken Takeuchi
International Conference on Solid State Devices and Materials (SSDM) 130-131, Sep. 2013

TLC/MLC NAND flash mix-and-match design with exchangeable storage array
Shogo Hachiya, Koh Johguchi, Kousuke Miyaji and Ken Takeuchi
International Conference on Solid State Devices and Materials (SSDM) 894-895, Sep. 2013

Hybrid ReRAM and MLC NAND SSD Memory System with Data Fragmentation Suppression
Tomoko Iwasaki, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Chao Sun, Ken Takeuchi
Flash Memory Summit, Aug. 2013

High Performance and Energy-efficient Hybrid ReRAM/MLC NAND Flash SSD with Intelligent Data Management Algorithm
Chao Sun, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi and Ken Takeuchi
Symposium on Advanced Computing Systems and Infrastructures (SACSIS) 117-118, Jun. 2013

SCM capacity and NAND over-provisioning requirements for SCM/NAND flash hybrid enterprise SSD
Chao Sun, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi
IEEE International Memory Workshop (IMW) 64-67, May 2013

Write Voltage and Read Reference Current Generator for Multi-Level Ge2Sb2Te5-based Phase Change Memories with Temperature Characteristics Tracking
Koh Johguchi, Toru Egami, Kousuke Miyaji and Ken Takeuchi
IEEE International Memory Workshop (IMW) 104-107, May 2013

Analysis on Static Noise Margin Improvement in 40nm 6T-SRAM with Post-Process Local Electron Injected Asymmetric Pass Gate Transistor
Kousuke Miyaji, Daisuke Kobayashi, Shinji Miyano and Ken Takeuchi
IEEE International Reliability Physics Symposium (IRPS) 3B.6.1-3B.6.5, Apr. 2013

Over 10-times high-speed, energy efficient 3D TSV-integrated hybrid ReRAM/MLC NAND SSD by intelligent data fragmentation suppression
Chao Sun, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Ken Takeuchi
Asia and South Pacific Design Automation Conferenece 81-82, Jan. 2013

An integrated variable positive/negative temperature coefficient read reference generator for MLC PCM/NAND hybrid 3D SSD
Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi and Ken Takeuchi
IEEE Asian Solid-State Circuits Conference (A-SSCC) 313-316, Nov. 2012

x11 performance increase, x6.9 endurance enhancement, 93% energy reduction of 3D TSV-integrated hybrid ReRAM/MLC NAND SSDs by data fragmentation suppression
Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi et al.
IEEE Symposium on VLSI Circuits 134-135, Jun. 2012

Control Gate Length, Spacing and Stacked Layer Number Design for 3D-Stackable NAND Flash Memory
Yuki Yanagihara, Kousuke Miyaji and Ken Takeuchi
IEEE International Memory Workshop (IMW) 84-87, May 2012

A 6T-SRAM with a Carrier Injection Scheme to Pinpoint and Repair Fails that Achieves 57% Faster Read and 31% Lower Read Energy
Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano and Ken Takeuchi
IEEE International Solid-State Circuits Conference (ISSCC) 232-233, Feb. 2012

Statistical VTH Shift Variation Self-Convergence Scheme Using Near Threshold VWL Injection for Local Electron Injected Asymmetric Pass Gate Transistor SRAM
Kousuke Miyaji, Yasuhiro Shinozuka, Shinji Miyano and Ken Takeuchi
IEEE Custom Integrated Circuits Conference (CICC) T-9, Sep. 2011

50nm HfO2 ReRAM with 50-Times Endurance Enhancement by Set/Reset Turnback Pulse&Verify Scheme
Kazuhide Higuchi, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi
International Conference on Solid State Devices and Materials (SSDM) 1011-1012, Sep. 2011

A Zero Additional Process to Standard CMOS, 8F2, Scalable Embedded Flash Memory with Drain-side Assisted Erase Scheme
Yasuhiro Shinozuka, Kousuke Miyaji and Ken Takeuchi
International Conference on Solid State Devices and Materials (SSDM) 981-982, Sep. 2011

Pushing Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage from 13nm to 8nm with SOI NAND Flash Memory Cells
Kousuke Miyaji, Chinglin Hung and Ken Takeuchi
International Conference on Solid State Devices and Materials (SSDM) 128-129, Sep. 2011

Initialize&Weak-Program Erasing Scheme for Elimination of Cell VTH Shift Variation Due to History Effect in Ferroelectric (Fe)-NAND Flash Memories
Kousuke Miyaji, Ryoji Yajima, Shigeki Sakai, Ken Takeuchi et al.
IEEESilicon Nanoelectronics Workshop 81-82, Jun. 2011

0.5V Bit-Line-Voltage Self-Boost-Programming in Ferroelectric-NAND Flash Memory
Zhang Xizhen, Kousuke Miyaji, Mitsue Takahashi, Ken Takeuchi, and Shigeki Sakai
IEEE International Memory Workshop (IMW) 155-158, May 2011

Elimination of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor
Kentaro Honda, Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano and Ken Takeuchi
IEEE Custom Integrated Circuits Conference (CICC) M-10, Sep. 2010

70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection
Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano, Ken Takeuchi et al.
IEEE Symposium on VLSI Circuits 41-42, Jun. 2010

A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD
Kousuke Miyaji, Shinji Noda, Shigeki Sakai, Ken Takeuchi et al.
IEEE International Memory Workshop (IMW) 42-45, May 2010

Advanced NAND Flash Memory Devices and Solid-State Drives
Kousuke Miyaji, Ken Takeuchi
Materials Research Society (MRS) Spring Meeting Tutorial G, Apr. 2010, Invited

A Ferroelectric NAND Flash Memory for Low-Power and Highly Reliable Enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V Low-Power CPU and SoC
Kousuke Miyaji, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi et al.
Materials Research Society (MRS) Spring Meeting, Apr. 2010, Invited

Characteristic Modulation of Silicon MOSFETs and Single Electron Transistors with a Movable Gate Electrode
Jong Sin Park, Takuya Saraya, Kousuke Miyaji, Toshiro Hiramoto et Al.
IEEE Silicon Nanoelectronics Workshop S1015, Jun. 2008

Experimental Study on Silicon Nanowire nMOSFET and Single-Electron Transistor at Room Temperature under Uniaxial Tensile Strain
Yeon Joo Jeong, Kousuke Miyaji and Toshiro Hiramoto
IEEE Silicon Nanoelectronics Workshop M0930, Jun. 2008

Experimental Study of Mobility in [110]- and [100]-Directed Multiple Silicon Nanowire GAA MOSFETs on (100) SOI
Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Toshiro Hiramoto et al.
IEEE Symposium on VLSI Technology 32-33, Jun. 2008

Transport in Silicon Nanowire and Single-Electron Transistor
Toshiro Hiramoto, Kousuke Miyaji, Masaharu Kobayashi
International Conference on Simulation of Semiconductor Devices and Processes (SISPAD) 209-215, Sep. 2007, Invited

Novel Long-Range-Extension of Coulomb Blockade Region in Room-Temperature Operating Silicon Single-Hole Transistor
Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi and Toshiro Hiramoto
IEEE Silicon Nanoelectronics Workshop 115-116, Jun. 2007

Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors
Masaharu Kobayashi, Kousuke Miyaji and Toshiro Hiramoto
International Conference on Solid State Devices and Materials (SSDM) 806-807, Sep. 2006

Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor
Kousuke Miyaji and Toshiro Hiramoto
International Conference on Solid State Devices and Materials (SSDM) 836-837, Sep. 2006

Large Temperature Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Electron/Single-Hole Transistor
Masaharu Kobayashi, Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto
International Semiconductor Device Research Symposium (ISDRS) TP3-03, Dec. 2005

On the Accuracy of Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels
Kousuke Miyaji, Masaharu Kobayashi, Tetsu Ohtou and Toshiro Hiramoto
International Semiconductor Device Research Symposium (ISDRS) WP7-07-06, Dec. 2005

Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain
Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto
International Conference on Solid State Devices and Materials (SSDM) 166-167, Sep. 2005

Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels
Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto
IEEE Silicon Nanoelectronics Workshop 82-83, Jun. 2005

Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs
Kousuke Miyaji, Masumi Saitoh, Toshiharu Nagumo and Toshiro Hiramoto
International Conference on Solid State Devices and Materials (SSDM) 236-237, Sep. 2004

Electronic Circuits
Shinshu University

CMOS Analog Integrated Circuit Design
Shinshu University

Electrical and Electronic Experiments I
Shinshu University

Physics Nearby and the Advanced Applications
Shinshu University

LSI Design
Shinshu University

2009
IEEE SSCS, EDS, CAS, PELS

2015
JSAP

2011
IEICE

体内埋め込み型医療デバイス向け小型・高効率かつ高速応答非接触給電回路システムの構築
中部電気利用基礎研究振興財団
01 Apr. 2016

フィージビリティスタディ パッケージ内蔵パワーインダクタを用いたSSD向け三次元集積統合降圧DC-DCコンバータの研究開発
共同研究, STARC
01 Apr. 2015 - 31 Mar. 2018

High efficiency power management integrated circuit design

Others
International Solid-State Circuits Conference TPC FE Associate Secretary, 2023

Others
Asia and South Pacific Design Automation Conference University Design Contest TPC Co-Chair, 2021

Others
International Conference on Solid State Devices and Materials TPC Member, 2020

Others
International Solid-State Circuits Conference TPC Member, 2020

Others
Asia and South Pacific Design Automation Conference University Design Contest TPC Co-Chair, 2019

Others
IEICE Transactions on Electronics , Jun. 2016

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IEICE Transactions on Electronics Special Section on VLSI Design and CAD Algorithms, 2015

Others
International Conference on Solid State Devices and Materials TPC Secretary, 2015 - 2017

Others
Asia and South Pacific Design Automation Conference University Design Contest TPC Member, 2015 - 2021

Others
IEICE Transactions on Electronics Special Section on Solid-State Circuit Design - Architecture, Circuit, Device and Design Methodology, 2012