Electric and electronic materials, electron/electronic material engineering

Crystal engineering, Crystal engineering

2024
Shinshu University, Department of Electrical and Computer Engineering, Faculty of Engineering, Associate Professor

2012 - 2015, Toyohashi University of Technology, 工学研究科, Electrical and Electron Information Engineerign

長野地区幹事, 応用物理学会北陸•信越支部

電子情報通信学会　信越支部　支部委員

Bulk photovoltaic effect of an alpha-phase indium selenide (α-In2Se3) crystal along the out-of-plane direction
Noriyuki Urakami ; Sho Ozaki; Yoshio Hashimoto
Applied Physics Letters, 125, 073102, 2024
Lead, Corresponding

Layered carbon nitride films deposited under an oxygen-containing atmosphere and their electronic properties
Higuchi, Kota; Tachibana, Masaki; Urakami, Noriyuki ; Hashimoto Yoshio;
AIP Advances, 14(2), 025047, 2024
Corresponding

Schottky barrier diode consisting of van der Waals heterojunction of MoS2 film and PtCoO2 contact
Urakami, Noriyuki; Fukai, Masaya; Hashimoto, Yoshio;
SOLID-STATE ELECTRONICS, 207, 108685, 2023
Lead, Corresponding

Thermal chemical vapor deposition of layered carbon nitride films under a hydrogen gas atmosphere
Urakami, Noriyuki; Takashima, Kensuke; Shimizu, Masahiro; Hashimoto, Yoshio;
CrystEngComm, 25(5), 877-883, 2023
Lead, Corresponding

Fabrication of a layered gallium selenide photodetector array via oxygen plasma etching
Urakami, Noriyuki; Nakakura, Shinya; Hashimoto, Yoshio;
APPLIED PHYSICS EXPRESS, 16(5), 056503, 2023
Lead, Corresponding

Solid-source vapor growth and optoelectronic properties of arsenic-based layered group-IV monopnictides
Kagami, Shu; Urakami, Noriyuki; Suzuki, Yuichiro; Hashimoto, Yoshio;
CrystEngComm, 24(22), 4085-4092, 2022
Corresponding

Oxidation of tantalum disulfide (TaS2) films for gate dielectric and process design of two-dimensional field-effect device
Takeuchi, Hayate; Urakami, Noriyuki; Hashimoto, Yoshio;
Nanotechnology, 33(37), 375204, 2022
Corresponding

Electrical Properties in Ta2NiSe5 Film and van der Waals Heterojunction
Fukai, Masaya; Urakami, Noriyuki; Hashimoto, Yoshio;
COATINGS, 11(12), 1485, Dec. 2021
Corresponding

Demonstration of electronic devices in graphitic carbon nitride crystalline film
Urakami, Noriyuki; Ogihara, Kohei; Futamura, Hatsuki; Takashima, Kensuke; Hashimoto, Yoshio;
AIP Advances, 11(7), Jul. 2021
Lead, Corresponding

Solid-source vapor growth of rectangular germanium arsenide (GeAs) film
Suzuki, Yuichiro; Urakami, Noriyuki; Hashimoto, Yoshio;
Materials Letters, 283, Jan. 2021
Corresponding

Electronic transport and device application of crystalline graphitic carbon nitride film
Takashima, Kensuke; Urakami, Noriyuki; Hashimoto, Yoshio;
Materials Letters, 281, Dec. 2020
Corresponding

Photoluminescence of Layered Semiconductor Materials for Emission-Color Conversion of Blue Micro Light-Emitting Diode (mu LED)
Tsuboi, Yuma; Urakami, Noriyuki; Hashimoto, Yoshio;
COATINGS, 10(10), 985, Oct. 2020
Corresponding

Crystalline trigonal selenium flakes grown by vapor deposition and its photodetector application
Suzuki, Yuichiro; Doi, Fumiaki; Urakami, Noriyuki; Hashimoto, Yoshio;
Materials Letters, 275, 128207, Sep. 2020
Corresponding

Kinetics Study and Degradation Analysis through Raman Spectroscopy of Graphite as a Negative-Electrode Material for Potassium-Ion Batteries
Shimizu, Masahiro; Koya, Taro; Nakahigashi, Atsuhito; Urakami, Noriyuki; Yamakami, Tomohiko; Arai, Susumu;
JOURNAL OF PHYSICAL CHEMISTRY C, 124(24), 13008-13016, Jun. 2020

Chemical Vapor Deposition of Boron-Incorporated Graphitic Carbon Nitride Film for Carbon-Based Wide Bandgap Semiconductor Materials
Urakami, Noriyuki; Kosaka, Maito; Hashimoto, Yoshio;
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 257(2), Feb. 2020
Lead, Corresponding

Direct growth of NbSe2 and TiSe2 thin flakes via deposited film selenization
Hachiya, Ren; Urakami, Noriyuki; Hashimoto, Yoshio;
Japanese Journal of Applied Physics, 59, 2020
Corresponding

Thermal chemical vapor deposition and luminescence property of graphitic carbon nitride film for carbon-based semiconductor systems
Urakami, Noriyuki; Kosaka, Maito; Hashimoto, Yoshio;
Japanese Journal of Applied Physics, 58(1), Jan. 2019
Lead, Corresponding

Temperature-dependent Raman spectroscopy of Cu2Sn1-xGexS3 thin films
Okamura, Takayoshi; Htay, Myo Than; Yamaguchi, Kohei; Urakami, Noriyuki; Momose, Noritaka; Ito, Kentaro; Hashimoto, Yoshio;
Japanese Journal of Applied Physics, 57(8), Aug. 2018

Epitaxial growth of ReS2(001) thin film via deposited-Re sulfurization
Urakami, Noriyuki; Okuda, Tetsuya; Hashimoto, Yoshio;
Japanese Journal of Applied Physics, 57(2), Feb. 2018
Lead, Corresponding

Formation of graphitic carbon nitride and boron carbon nitride film on sapphire substrate
Kosaka, Maito; Urakami, Noriyuki; Hashimoto, Yoshio;
Japanese Journal of Applied Physics, 57(2), Feb. 2018
Corresponding

Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation
Urakami, Noriyuki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro;
Journal of Crystal Growth, 435, 19-23, 2016
Lead

III-V-N Compounds for Multi-Junction Solar Cells on Si
Yamane, K (Yamane, Keisuke) ; Urakami, N (Urakami, Noriyuki) ; Sekiguchi, H (Sekiguchi, Hiroto) ; Wakahara, A (Wakahara, Akihiro)
2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2792-2796, Jun. 2014, Refereed

Growth of dilute BGaP alloys by molecular beam epitaxy
Urakami, N.; Fukami, F.; Sekiguchi, H.; Okada, H.; Wakahara, A.;
Journal of Crystal Growth, 378, 96-99, 2013
Lead

Annealing behavior on luminescence properties of self-assembled InGaAsN/GaP quantum dots
Urakami, N.; Umeno, K.; Furukawa, Y.; Fukami, F.; Mitsuyoshi, S.; Okada, H.; Yonezu, H.; Wakahara, A.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, 8(2), 263-265, Feb. 2011, Refereed
Lead

Analysis of quantum levels for self-assembled InGaAsN/GaP quantum dots
Fukami, F.; Umeno, K.; Furukawa, Y.; Urakami, N.; Mitsuyoshi, S.; Okada, H.; Yonezu, H.; Wakahara, A.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, 8(2), 322-324, Feb. 2011, Refereed

Electrical and luminescence properties of Mg-doped p-type GaPN grown by molecular beam epitaxy
Mitsuyoshi, S.; Umeno, K.; Furukawa, Y.; Urakami, N.; Wakahara, A.; Yonezu, H.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, 7(10), 2498-2501, Sep. 2010, Refereed

Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy
Umeno, K.; Furukawa, Y.; Urakami, N.; Noma, R.; Mitsuyoshi, S.; Wakahara, A.; Yonezu, H.;
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 42(10), 2772-2776, Sep. 2010

Growth and luminescence characterization of dilute InPN alloys grown by molecular beam epitaxy
Umeno, K.; Furukawa, Y.; Urakami, N.; Mitsuyoshi, S.; Yonezu, H.; Wakahara, A.; Ishikawa, F.; Kondow, M.;
Journal of Vacuum Science & Technology B, 28(3), May 2010

Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE
Umeno, K.; Furukawa, Y.; Urakami, N.; Mitsuyoshi, S.; Yonezu, H.; Wakahara, A.;
Journal of Crystal Growth, 312(2), 231-237, 2010

応用物理学会

Japan Society of Applied Physics

層状窒化炭素膜における面内方向に沿う電荷輸送制御とノーマ リーオフ電子素子への展開
工学研究奨励援助金, 公益財団法人 服部報公会
Oct. 2024 - Dec. 2025

シリコンを基礎材料とした異種接合フォトダイオードの開発
助成金, 公益財団法人TAKEUCHI育英奨学会
Apr. 2024 - Mar. 2025

新規 p 型二次元物質による電界効果素子の開発
研究助成, 一般財団法人信州大学工学部若里会
Apr. 2024 - Mar. 2025

層状窒化炭素薄膜における室温強磁性の発現
豊田理研スカラー, 公益財団法人 豊田理化学研究所
Apr. 2024 - Mar. 2025

ノーマリーオフ動作二次元チャネル電子素子の開発
研究助成, 公益財団法人 中部電気利用基礎研究振興財団, A2研究
Apr. 2024 - Mar. 2025

グラファイト状窒化炭素膜の半導体素子への展開
日本学術振興会 科学研究費助成事業, 若手研究
Apr. 2021 - Mar. 2024

低環境負荷半導体材料の創成に向けたグラファイト状窒化炭素のバンドギャップ制御
日本学術振興会 科学研究費助成事業, 若手研究
Apr. 2019 - Mar. 2021