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UENO Takumi|Shinshu University Researcher List

UENO Takumi

Faculty of Textile Science and Technology 

Professor 

Researcher Information

Degree

  • 理学(博士), 東京工業大学

Mail Address

    ueno-t★shinshu-u.ac.jp
Research activity information

Paper

  • Influence of Viscosity on Photopolymerization in Film as Studied by Real Time FTIR
    A. Nicolas and T. Ueno
    J. Photopolym. Sci. Technol., 20, 141-142, 2007, Refereed
  • Low Temperature Curing of Polyimide Precursors by Variable Frequency Microwave
    H. Matsutani, T. Hattori, M. Ohe, et al.
    J. Photopolym. Sci. Technol., 18, 327-332, 2005, Refereed
  • Dissolution inhibitory effect of urea additives on a carboxyl polymer through a supramolecular structure
    Y. Maekawa, T. Ueno, T. Miwa,et al.
    J. Photopolym. Sci. Technol., 11, 533-537, 1998, Refereed
  • Negative Resists Using Acid-catalyzed dehydration of phenylcarbinols: correlation between chemical structure and resist sensitivity
    K. Kojima, S. Uchino, N. Asai et al.
    Chem. Mater., 8, 2433-2438, 1996, Refereed
  • Delay-free deprotection approach to robust chemically amplified resist
    T. Hattori, A. Imai, R. Yamanaka et al.
    J. Photopolym. Sci. Technol., 9, 611-617, 1996, Refereed
  • Highly sensitive electron-beam negative resists utilizing phenylcarbinol as dissolution-inhibitor precursor
    S. Migitaka, S. Uchino, T. Ueno etal.
    J. Photopolym. Sci. Technol., 9, 685-690, 1996, Refereed
  • KrF trilayer resist system using azide-phenol resin resist
    N. Asai , A. Imai, T. Ueno et al.
    J. Photopolym. Sci. Technol., 7, 23-27, 1994, Refereed
  • Chemical amplification resists for future lithography
    T. Ueno, H. Shiraishi, S. Uchino et al.
    J. Photopolym. Sci. Technol., 7, 397-403, 1994, Refereed
  • Nanometer-scale imaging characteristics of novolak resin-based chemical amplification negative resist systems and molecular weight distribution effects of resin matix
    H. Shiraishi, T. Yoshimura, T. Sakamizu et al.
    J. Vac. Sci. Technol. B, 12, 3895-3900, 1994, Refereed
  • Development of positive electron-beam resist for 50 kV electron-beam direct-writing lithography
    T. Sakamizu, H. Yamaguchi, H. Shiraishi et al.
    J. Vac. Sci. Technol. B, 11, 2812-2816, 1993, Refereed
  • Chemical amplification positive deep ultraviolet resist by means of partially tetrahydropyranyl-protected polyvinylphenol
    T. Hattori, L. Schlegel, A. Imai et al.
    Opt. Eng., 32, 2368-2373, 1993, Refereed
  • Bisazidobiphenyl / novolak resin negativeresist systems for i-line phase-shifting lithography
    K. T. Hattori, T. Hattori, S. Uchino et al.
    Jpn. J. Appl. Phys., 31, 4307-4310, 1992, Refereed
  • Acid-catalyzed reactions of tetrahydropyranyl-protected polyvinylphenol in a novolak-resin-based positive resist
    T. Sakamizu, H. Shiraishi, H. Yamaguchi et al.
    Jpn. J. Appl. Phys., 31, 4288-4291, 1992, Refereed
  • Acid formation from various sulfonates in a chmical amplification resists
    T. Ueno, L. Schlegel, N. Hayashi et al.
    Polym. Eng. Sci., 32, 1511-1517, 1992, Refereed
  • Dissolution inhibition of phenolic resins by diazonaphthoquinone: effect of polymer structure
    T. Hattori, T. Ueno, H. Shiraishi et al.
    Jpn. J. Appl. Phys., 30, 3125-3130, 1991, Refereed