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市田 秀樹  イチダ ヒデキ

教員組織電話番号
教育組織キャリア教育・サポートセンターFAX番号
職名特任教授メールアドレス
住所〒390-8621 長野県松本市旭3-1-1ホームページURLhttps://researchmap.jp/femfem/

プロフィール

研究分野
光物性
レーザー分光学
半導体、光物性、原子物理
光工学、光量子科学
応用物性
所属学会
所属学会
日本生物物理学会
レーザー学会
応用物理学会
日本物理学会
学歴
出身大学院
2002 , 大阪市立大学大学院 , 工学研究科 , 応用物理学専攻
1999 , 大阪市立大学大学院 , 工学研究科 , 応用物理学専攻

出身学校・専攻等(大学院を除く)
1997 , 大阪市立大学 , 工学部 , 応用物理学科

取得学位
博士(工学) , 大阪市立大学
研究職歴等
研究職歴
2022- , 大阪公立大学・国際基幹教育機構・准教授
2021- , 大阪府立大学・高等教育推進機構・准教授
2018-2021 , 信州大学 学術研究・産学連携産学官連携推進機構 准教授(URA)
2015-2018 , 日本文理大学 工学部 特任准教授
2011-2014 , 大阪大学 産学連携本部 助教
2007-2011 , 大阪大学 先端科学イノベーションセンター 助教
2004-2007 , 大阪大学 先端科学イノベーションセンター 助手
2004-2004 , 大阪大学 先端科学イノベーションセンター 特任研究員
2003-2004 , 大阪大学 ベンチャービジネスラボラトリー 講師(中核的研究機関研究員)
2002-2002 , JST 研究員

研究活動業績

研究業績(著書・
発表論文等)
論文
対話型・参加型教育を促す研究公正教材の国際動向 : 「Path2Integrity」「Dilemma Game」を題材に
RI : Research Integrity Reports,5:20-40 2021(Sep. 15)
Author:市田 秀樹; 中村 征樹


共同研究で何に留意すべきか : 国内の研究不正事案からの検討
RI : Research Integrity Reports,5:41-57 2021(Sep. 15)
Author:中村 文彦; 市田 秀樹; 中村 征樹


二重投稿をめぐる動向 : 国際学会プロシーディング論文の扱いを中心に
RI : Research Integrity Reports,(4):31-48 2020(Mar. 31)
Author:市田 秀樹; 中村 征樹


Synthesis of Water-Soluble CuInS2 Quantum Dots by a Hydrothermal Method and Their Optical Properties
Bulletin of the Chemical Society of Japan,92(5):930-936 2019(Feb. 13)
Author:Kazutaka Iida; Yota Uehigashi; Hideki Ichida; Hang-Beom Bu; DaeGwi Kim
Abstract:Water-soluble CuInS2 (CIS) quantum dots (QDs) were hydrothermally prepared in the presence of N-acetyl-L-cysteine (NAC) as a stabilizer, and the optimal hydrothermal synthetic conditions for NAC-capped CIS QDs were investigated. The photoluminescence (PL) quantum yield (QY) of the CIS QDs synthesized under optimal conditions was 4%, which was comparable with the highest QY reported for water-soluble CIS core QDs. The introduction of a ZnS shell produced CIS/ZnS core/shell QDs and further increased the PL QY to 30%. Furthermore, bilayer structures consisting of Au nanoparticles and CIS/ZnS QDs were fabricated using a layer-bylayer method to enhance the PL of the CIS/ZnS QDs on the basis of the localized surface plasmon resonance of Au nanoparticles.


Hierarchical construction of SHG-active polar crystals by using multi-component crystals
CHEMICAL COMMUNICATIONS,52(94):13710-13713 2016
Author:Tetsuya Miyano; Tatsuya Sakai; Ichiro Hisaki; Hideki Ichida; Yasuo Kanematsu; Norimitsu Tohnai
Abstract:Organic salts composed of chiral amines and sulfonic acid with high hyperpolarizability allowed the construction of polar crystals with incorporated guest molecules. The polarity of the crystals was precisely regulated by employing suitable guest molecules. As a result, the crystals generated a strong second harmonic generation property.


Theory of the lifetime of an exciton incoherently created below its resonance frequency by inelastic scattering
PHYSICAL REVIEW B,91(23):235205/01-13 2015(Jun.)
Author:Motoaki Bamba; Shuji Wakaiki; Hideki Ichida; Kohji Mizoguchi; DaeGwi Kim; Masaaki Nakayama; Yasuo Kanematsu
Abstract:When an exciton in semiconductor is scattered and its energy is decreased far below the resonance energy of the bare exciton state, it has been considered that an exciton-polariton is created immediately by the scattering process because there is no exciton level at that energy. However, according to the recent time-resolved measurements of P emission originating from inelastic exciton-exciton scattering, it looks rather natural to consider that the exciton-polariton is created in a finite time scale which is restricted by a coherence volume of the exciton after the scattering. In this interpretation, the exciton remains in this time scale far below its resonance energy as a transient state in a series of processes. We propose an expression of the P-emission lifetime depending on the coherence volume of the scattered excitons through the conversion process from them to the polaritons. The coherence volume of the scattered excitons appears in the calculation of the inelastic scattering process on the assumption of a finite coherence volume of the bottleneck excitons. Time-resolved optical-gain measurements could be a way for investigating the validity of our interpretation.


Emission-energy dependence of ultrafast P-emission decay in ZnO from bulk to nanofilm
JOURNAL OF LUMINESCENCE,152:250-253 2014(Aug.)
Author:Shuji Wakaiki; Hideki Ichida; Motoaki Bamba; Toshiki Kawase; Masaki Kawakami; Kohji Mizoguchi; DaeGwi Kim; Masaaki Nakayama; Yasuo Kanematsu
Abstract:We have performed time-resolved photoluminescence (PL) spectroscopy for ZnO thin films with thicknesses of 90, 460, and 2800 nm under intense excitation condition. We clearly observed the P emission due to inelastic exciton-exciton scattering. It was found that, in the 460- and 2800-nm thick samples, the decay time of the P emission considerably depends on the detection energy inversely proportional to the group velocity of the polariton in a bulk crystal with each factor of proportionality. In contrast, the energy dependence is less remarkable in the 90-nm thick sample. The decay times are basically shortened with a decrease in the film thickness. The thickness dependence of the P-emission-decay profiles is explained by considering the crossover from the polariton modes in the 2800-nm thick sample (bulk-like film) to the exciton-/photon-like modes in the 90-nm thick sample (nanofilm). (C) 2013 Elsevier B.V. All rights reserved.


Thickness dependence of photoluminescence-decay profiles of exciton-exciton scattering in ZnO thin films
EUROPEAN PHYSICAL JOURNAL B,86(9):387/01-4 2013(Sep.)
Author:Shuji Wakaiki; Hideki Ichida; Toshiki Kawase; Kohji Mizoguchi; DaeGwi Kim; Masaaki Nakayama; Yasuo Kanematsu
Abstract:We have investigated the photoluminescence (PL) dynamics of ZnO thin films under intense excitation conditions using an optical-Kerr-gating method. The PL bands originating from exciton-exciton scattering (P emission) and biexciton (M emission) have been observed at 10 K. The ultrashort gating time of 0.6 ps has enabled us to obtain precise information of the temporal profiles of the peak energies and the intensities of the P- and M-PL bands. We have found that the decay time of the P emission becomes longer with increasing film thickness, while that of the M emission is independent of the film thickness. Although the decay time of the P emission is an increasing function of the film thickness, the relation is not in proportion, which is contrary to the predicted proportionality based on a simple model of photon-like polariton propagation.


Slow propagation of photon-like polaritons generated by exciton-exciton scattering in ZnO thin films
XVIIITH INTERNATIONAL CONFERENCE ON ULTRAFAST PHENOMENA,41:04014/01-3 2013
Author:H. Ichida; S. Wakaiki; T. Kawase; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu
Abstract:We report on the first observation of the thickness-dependent photoluminescence-decay time of exciton-exciton scattering in ZnO thin films, which indicates the slower propagation of photon-like polaritons compared to that in bulk by two orders magnitude.


Photoluminescence dynamics due to biexcitons and exciton-exciton scattering in the layered-type semiconductor PbI 2
Physical Review B - Condensed Matter and Materials Physics,86(15):155206 2012(Oct. 08)
Author:M. Ando; M. Yazaki; I. Katayama; H. Ichida; S. Wakaiki; Y. Kanematsu; J. Takeda
Abstract:The dynamics of photoluminescence due to biexcitons and exciton-exciton scattering (M and P emissions, respectively) has been investigated in the layered-type semiconductor PbI 2 by using the optical Kerr gate method. We simultaneously observed P and M emissions under high-density excitation. The M emission emerges instantaneously, whereas the P emission shows a delayed onset whose latency increases as the excitation photon energy increases. The latency to onset indicates that the P emission takes place after the relaxation of excitons with excess energy toward the bottleneck region via exciton-longitudinal optical (LO) phonon scattering processes. Based on the time-dependent peak energy shift of the P emission and a line-shape analysis of the M emission, we evaluated the effective temperatures of both photogenerated excitonic and biexcitonic systems as well as the self-energy due to the collisions among biexcitons. We conclude that these systems are separately formed in space owing to potential fluctuations between PbI 2 layers, and independently reach thermal equilibrium after ∼30 ps with different cooling processes. The exciton-exciton and exciton-LO phonon scattering processes play an important role in cooling the excitonic system, whereas the biexciton-biexciton and biexciton-exciton collisions are dominant in cooling the biexcitonic system. © 2012 American Physical Society.


Photoluminescence dynamics due to biexcitons and exciton-exciton scattering in the layered-type semiconductor PbI2
PHYSICAL REVIEW B,86(15):155206/01-6 2012(Oct.)
Author:M. Ando; M. Yazaki; I. Katayama; H. Ichida; S. Wakaiki; Y. Kanematsu; J. Takeda
Abstract:The dynamics of photoluminescence due to biexcitons and exciton-exciton scattering (M and P emissions, respectively) has been investigated in the layered-type semiconductor PbI2 by using the optical Kerr gate method. We simultaneously observed P and M emissions under high-density excitation. The M emission emerges instantaneously, whereas the P emission shows a delayed onset whose latency increases as the excitation photon energy increases. The latency to onset indicates that the P emission takes place after the relaxation of excitons with excess energy toward the bottleneck region via exciton-longitudinal optical (LO) phonon scattering processes. Based on the time-dependent peak energy shift of the P emission and a line-shape analysis of the M emission, we evaluated the effective temperatures of both photogenerated excitonic and biexcitonic systems as well as the self-energy due to the collisions among biexcitons. We conclude that these systems are separately formed in space owing to potential fluctuations between PbI2 layers, and independently reach thermal equilibrium after similar to 30 ps with different cooling processes. The exciton-exciton and exciton-LO phonon scattering processes play an important role in cooling the excitonic system, whereas the biexciton-biexciton and biexciton-exciton collisions are dominant in cooling the biexcitonic system.


Photoluminescence dynamics originating from exciton-exciton and exciton-electron scattering in a GaN thin film
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12,9(12):2497-2500 2012
Author:Shuji Wakaiki; Hitoshi Tokumaru; Hideki Ichida; Kohji Mizoguchi; DaeGwi Kim; Yasuo Kanematsu; Masaaki Nakayama
Abstract:We have investigated the photoluminescence (PL) dynamics of a GaN thin film under intense excitation conditions using an optical-Kerr-gating method. It has been found that the PL originating from the exciton-exciton scattering (P emission) appears at the temperatures lower than around 100 K, while at higher temperatures P emission vanishes and the PL originating from exciton-electron scattering (H emission) dominates. The ultrashort gating time of 0.6 ps enabled us to obtain precise information of the temporal profiles of the peak energy, the bandwidth, and the intensity of the P emission and H emission. We have found that the decay time of the H emission is shorter than that of the P emission. By taking into account the strong correlation between the decay time and the peak-energy position of the emissions, we conclude that the difference in the decay times is attributed to a change of the photon-like characteristics of the lower polariton branch that is the final state of the scattering process; namely, the photon-like component of the H emission is larger than that of the P emission. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


Photoluminescence of excitons and biexcitons in (C4H9NH3)(2)PbBr4 crystals under high excitation density
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12,9(12):2501-2504 2012
Author:Yasuo Yamamoto; Goro Oohata; Kohji Mizoguchi; Hideki Ichida; Yasuo Kanematsu
Abstract:Optical properties in (C4H9NH3)(2)PbBr4 single crystals under high density excitation have been investigated by photoluminescence (PL) spectroscopy. The PL bands associated with the Gamma(1), Gamma(2) and Gamma(5) excitons and the biexcitons have been observed. While the Gamma(2) exciton and biexciton PL intensities are proportional to the 0.9 and 1.7 power of the excitation density, respectively, the Gamma(5) exciton PL intensity shows the nonlinear dependence on the excitation density. The excitation-density dependence of the PL bands is calculated by taking account of the dynamical change of the exciton and biexciton populations in an exciton-biexciton system consisting of two exciton states and a biexciton state. The calculated results well explain the nonlinear dependence of the Gamma(5) exciton PL intensity on the excitation density. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


Selective Photoinduced Energy Transfer from a Thiophene Rotaxane to Acceptor
ORGANIC LETTERS,13(4):672-675 2011(Feb.)
Author:Kazuya Sakamoto; Yoshinori Takashima; Norio Hamada; Hideki Ichida; Hiroyasu Yamaguchi; Hitoshi Yamamoto; Akira Harada
Abstract:An energy transfer process was investigated using cyclodextrin-oligothiophene rotaxanes (2T-[2]rotaxane). The excited energy of 2T-[2]rotaxane is transferred to the sexithiophene derivative which is included in the cavity of beta-CD stoppers of 2T-[2]rotaxane.


Photoluminescence decay profiles of exciton-exciton scattering in a ZnO thin film
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 1,8(1):116-119 2011
Author:Shuji Wakaiki; Hideki Ichida; Kohji Mizoguchi; DaeGwi Kim; Yasuo Kanematsu; Masaaki Nakayama
Abstract:We have investigated the photoluminescence (PL) dynamics of a ZnO thin film under intense excitation conditions at 10 K. In the ZnO thin film, a PL band due to exciton-exciton scattering, the so-called P emission, appears. The optical-Kerr-gating method with the ultrashort gating time of 0.6 ps enabled us to obtain precise information of the temporal profiles including the peak energy, the bandwidth and the intensity of the P emission, at various detection energies. We have found that the decay time of the P emission gradually shortens with decreasing detection energy. The change in the decay time can be reasonably attributed to the photon-like characteristics of the lower polariton branch that is the final state of the exciton-exciton scattering. Furthermore, we have shown that the decay time of the P emission is phenomenologically determined by the group velocity of the final state although the origin of the long decay time remains to be elucidated. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


Single-Shot Time-Frequency Imaging of Phonon-Polariton Dispersion in Ferroelectric LiNbO3
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO),:CFO5: pp.1-2 2011
Author:Ikufumi Katayama; Hiroyuki Sakaibara; Hideki Ichida; Yasuo Kanematsu; Jun Takeda
Abstract:Single-shot observation of phonon-polariton dispersion in LiNbO3 is demonstrated using optical Kerr-gate method with an echelon mirror. Forward-and backward-propagating phonon-polaritons are observed in the time-frequency two-dimensional image. (C)2009 Optical Society of America


Nonradiative Transition Processes between the Relaxed Excited States of Ag- Centers Doped in KI Crystals
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,79(12):124708/01-6 2010(Dec.)
Author:Taketoshi Kawai; Keita Hirayama; Hideki Ichida; Yasuo Kanematsu; Kohji Mizoguchi
Abstract:Decay kinetics and intensities of the luminescence bands for Ag- centers doped in KI single crystals have been investigated over a wide temperature range between 5 and 310 K. The Ag- centers doped in KI exhibit a broad and largely Stokes-shifted C* luminescence band at about 1.60 eV in addition to the A' and C' luminescence bands, whose peaks are 2.65 and 3.67 eV, respectively. The luminescence intensities of these bands change with temperature while complementing each other. Decay times of the luminescence decrease in the temperature range where the luminescence diminishes with increasing temperature. The temperature evolutions of the decay times and the intensities of the luminescence are analyzed on the basis of a configuration coordinate model including the thermally activated nonradiative transitions among the relaxed excited states. From the analysis results, the parameters characterizing the respective nonradiative transitions are determined.


Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature
OPTICAL MATERIALS,31(9):1323-1326 2009(Jul.)
Author:Yoshikazu Terai; Takehiro Tokuno; Hideki Ichida; Yasuo Kanematsu; Yasufumi Fujiwara
Abstract:Low-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light-emitting diode (LED) grown by organometallic vapor phase epitaxy. Under forward bias at 77 K, the EL spectra from a cleaved edge of the LED were dominated by the luminescence due to an Er-20 center, indicating that injected carriers contribute effectively to the excitation of the Er-20 center. Excitation cross-sections of Er ions by current injection were obtained by the current density dependence of the EL intensity and its time response. The excitation cross-sections depended on temperature and the active layer thickness of the LED. (C) 2008 Published by Elsevier B.V.


Decay kinetics of the luminescence of Ag- centers doped in alkali halide crystals
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,246(6):1327-1333 2009(Jun.)
Author:Taketoshi Kawai; Ichiro Akai; Hideki Ichida; Yasuo Kanematsu; Kohji Mizoguchi; Tsutomu Karasawa
Abstract:Decay kinetics of the luminescence of Ag centers doped in NaCl, KBr, and CsBr single crystals have been investigated in the temperature range from 4 K to 260 K. At low temperature, the radiative transitions from the T-1(lu) states in the Ag centers exhibit the luminescence with the decay time constants of about 1.3 ns. With increasing temperature, the decay time constants decrease, fleeting a thermally activated non-radiative transition process from the 1T(lu) to T-3(lu) states. On the other hand the luminescence due to the radiative transitions from the 3T(lu) states have the decay time constants of about 1.0 ms at low temperature and about 10 mu s above 80 K from the analysis of the temperature dependence of the decay time constants, the parameters of a three-level model and a thermally activated non-radiative process from the T-1(lu) to T-3(lu) states are obtained. The parameters are discussed as compared with those of other Tl+-type centers doped in alkali halide crystals. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


Ultrafast Dynamics of Electron-Hole Plasma Coupled to Optical Phonons in a ZnO Thin Film
ULTRAFAST PHENOMENA XVI,92:226-+ 2009
Author:Hideki Ichida; Shuji Wakaiki; Kohji Mizoguchi; DaeGwi Kim; Yasuo Kanematsu; Masaaki Nakayama
Abstract:We have investigated ultrafast photoluminescence dynamics of electron-hole plasma coupled to longitudinal optical phonons in a ZnO thin film. The dynamical change of the electron-hole-pair density is characterized by time-resolved photoluminescence spectra measured with an optical-Kerr-gating method.


Transient vibronic structure in ultrafast fluorescence spectra of photoactive yellow protein
PHOTOCHEMISTRY AND PHOTOBIOLOGY,84(4):937-940 2008(Jul.)
Author:Ryosuke Nakamura; Norio Hamada; Hideki Ichida; Fumio Tokunaga; Yasuo Kanematsu
Abstract:The ultrafast photo-induced dynamics of wild-type photoactive yellow protein and its site-directed mutant of E46Q in aqueous solution was studied at room temperature by femtosecond fluorescence spectroscopy using the optical Kerr-gate method. The vibronic structure appears, depending on the excitation photon energy, in the time-resolved fluorescence spectra just after photoexcitation, which winds with time and disappears on a time scale of sub-picoseconds. This result indicates that the wavepacket is localized in the electronic excited state followed by dumped oscillations and broadening, and also that the initial condition of the wavepacket prepared depending on the excitation photon energy affects much the following ultrafast dynamics in the electronic excited state.


Fast photoluminescence dynamics in ZnO thin films under high-density excitation conditions
JOURNAL OF LUMINESCENCE,128(5-6):1059-1061 2008(May)
Author:H. Ichida; S. Wakaiki; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama
Abstract:We have investigated the photoluminescence (PL) dynamics of crystalline ZnO thin films prepared by an rf-magnetron sputtering method under high-density excitation conditions at 10 K using an optical-Kerr gating (OKG.) method. In the time-resolved PL spectra, we clearly observed the change of the PL properties with increasing time delay. In the initial time region up to about 5 ps, a broad PL band appears at the low-energy side of the free exciton band, which is considered to be due to the electron-hole plasma (EHP) accompanied with a band-gap renormalization. After the broad PL band vanishes, a narrow PL band originating from exciton-exciton scattering, the so-called P emission, appears; namely, its peak energy reaches the energy lower than the free exciton energy by the exciton binding energy. Thus, the time-resolved PL spectra clearly demonstrate the dynamical change from the EHP emission to the P emission at the cross-point time of about 5 ps, which corresponds to the dynamical phase transition from the EHP state to the exciton state. (C) 2008 Elsevier B.V. All rights reserved.


Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5 mu m light-emitting devices with extremely stable wavelength
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,205(1):64-67 2008(Jan.)
Author:Yasufumi Fujiwara; Shouichi Takemoto; Takehiro Tokuno; Keiji Hidaka; Hideki Ichida; Masato Suzuki; Yoshikazu Terai; Yasuo Kanematsu; Masayoshi Tonouchi
Abstract:Energy-transfer processes in Er,O-codoped GaAs (GaAs: Er,O) have been investigated by means of a pump and probe reflection technique. Time-resolved reflectivity exhibited a characteristic dip; a negative signal due to bandgap re-normalization in less than 1 ps and then a gradual recovery. In the recovery process, there were two components, fast and slow. The fast recovery time (several ps) was inversely proportional to Er concentration. The analysis based on a rate equation indicated that it is due to the capture of electrons by charged traps. The slow recovery (30-60 ps) was well coincident with the time (54 ps) predicted theoretically in the framework of a multiphonon-assisted model. Optical excitation cross section of Er ions in GaAs:Er,O has also been studied in various samples and shown to depend strongly on Er concentration. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5 μm light-emitting devices with extremely stable wavelength
Physica Status Solidi (A) Applications and Materials Science,205(1):64-67 2008(Jan.)
Author:Yasufumi Fujiwara; Shouichi Takemoto; Takehiro Tokuno; Keiji Hidaka; Hideki Ichida; Masato Suzuki; Yoshikazu Terai; Yasuo Kanematsu; Masayoshi Tonouchi
Abstract:Energy-transfer processes in Er,O-codoped GaAs (GaAs : Er,O) have been investigated by means of a pump and probe reflection technique. Time-resolved reflectivity exhibited a characteristic dip; a negative signal due to bandgap renormalization in less than 1 ps and then a gradual recovery. In the recovery process, there were two components, fast and slow. The fast recovery time (several ps) was inversely proportional to Er concentration. The analysis based on a rate equation indicated that it is due to the capture of electrons by charged traps. The slow recovery (30-60 ps) was well coincident with the time (54 ps) predicted theoretically in the framework of a multiphonon-assisted model. Optical excitation cross section of Er ions in GaAs:Er,O has also been studied in various samples and shown to depend strongly on Er concentration. © 2008 WILEY VCH Verlag GmbH & Co. KGaA.


Nonradiative processes at low temperature in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9,5(9):2864-+ 2008
Author:A. Fujita; T. Tokuno; K. Hidaka; K. Fujii; K. Tachibana; H. Ichida; Y. Terai; Y. Kanematsu; Y. Fujiwara
Abstract:Er-related photoluminescence (PL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) grown by organometallic vapor phase epitaxy. The GaAs:Er,O which was slightly doped with Er exhibited both strong Er-related and band-edge luminescence. In the temperature dependence of the Er-related PL intensity, the intensity decreased with increasing temperature from 4.2 K to 30 K. The temperature region was quite coincident with the region where the Carbon-related PL intensity decreased. This behaviour implies the existence of a Carbon-related nonradiative process in GaAs. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Coherent oscillations in ultrafast fluorescence of photoactive yellow protein
JOURNAL OF CHEMICAL PHYSICS,127(21):215102/01-7 2007(Dec.)
Author:Ryosuke Nakamura; Norio Hamada; Hideki Ichida; Fumio Tokunaga; Yasuo Kanematsu
Abstract:The ultrafast photoinduced dynamics of photoactive yellow protein in aqueous solution were studied at room temperature by femtosecond fluorescence spectroscopy using an optical Kerr-gate technique. Coherent oscillations of the wave packet were directly observed in the two-dimensional time-energy map of ultrafast fluorescence with 180 fs time resolution and 5 nm spectral resolution. The two-dimensional map revealed that four or more oscillatory components exist within the broad bandwidth of the fluorescence spectrum, each of which is restricted in the respective narrow spectral region. Typical frequencies of the oscillatory modes are 50 and 120 cm(-1). In the landscape on the map, the oscillatory components were recognized as the ridges which were winding and descending with time. The amplitude of the oscillatory and winding behaviors is a few hundred cm(-1), which is the same order as the frequencies of the oscillations. The mean spectral positions of the oscillatory components in the two-dimensional map are well explained by considering the vibrational energies of intramolecular modes in the electronic ground state of the chromophore. The entire view of the wave packet oscillations and broadening in the electronic excited state, accompanied by fluorescence transitions to the vibrational sublevels belonging to the electronic ground state, was obtained. (c) 2007 American Institute of Physics.


Energy-relaxation dynamics of photogenerated excitons observed from time-resolved photoluminescence of exciton-exciton scattering in CuI thin films
PHYSICAL REVIEW B,76(8):085417/01-5 2007(Aug.)
Author:H. Ichida; Y. Kanematsu; K. Mizoguchi; D. Kim; M. Nakayama
Abstract:We have investigated the excitation-photon-energy dependence of time-resolved photoluminescence spectra of the P emission due to exciton-exciton scattering at 10 K in CuI thin films from the viewpoint of energy-relaxation dynamics of photogenerated excitons. The ultrashort time resolution of 0.4 ps using an optical-Kerr-gating method enabled us to obtain precise information of the relaxation dynamics under various excitation-photon-energy conditions. It is found that the onset time of the P emission, which corresponds to the time required for the appearance of the P emission after the irradiation of an excitation pulse, increases with increasing excitation-photon energy, while the rise and decay times of the P emission are independent on the excitation-photon energy. These results indicate that the onset time is connected with an energy-relaxation time of the photogenerated excitons toward the bottleneck region of the exciton-polariton. On the basis of a Frohlich-interaction model, we have quantitatively analyzed the energy-relaxation time, taking account of interactions between the excitons and longitudinal optical (LO) phonons, the so-called cascade process of LO-phonon scattering, in momentum space.


Ultrafast dynamics of photoactive yellow protein via the photoexcitation and emission processes
PHOTOCHEMISTRY AND PHOTOBIOLOGY,83(2):397-402 2007(Mar.)
Author:Ryosuke Nakamura; Norio Hamada; Hideki Ichida; Fumio Tokunaga; Yasuo Kanematsu
Abstract:Pump-dump fluorescence spectroscopy was performed for photoactive yellow protein (PYP) at room temperature. The effect of the dump pulse on the population of the potential energy surface of the electronic excited state was examined as depletion in the stationary fluorescence intensity. The dynamic behavior of the population in the electronic excited state was successfully probed in the various combinations of the pump-dump delay, the dump-pulse wavelength, the dump-pulse energy and the observation wavelength. The experimental results were compared with the results obtained by the femtosecond time-resolved fluorescence spectroscopy.


Dynamical process of exciton-exciton scattering in CuI thin films
JOURNAL OF LUMINESCENCE,122:396-398 2007(Jan.)
Author:Hideki Ichida; Takeya Shimomura; Kohji Mizoguchi; DaeGwi Kim; Yasuo Kanematsu; Masaaki Nakayama
Abstract:We have investigated the time-resolved photoluminescence (PL) spectra of CuI thin films under intense excitation conditions in the time region up to 25 ps. In the time-integrated PL spectra, we have clearly observed the PL band originated from the inelastic scattering of excitons, so-called P emission. The time-resolved PL spectra obtained by using an optical Kerr gating method exhibit that the peak energy of the P-emission band temporally changes in a picosecond region, which reflects the variation of the effective temperature of excitonic system. In the time profile of the P-emission band, we found the following two characteristic properties. One is that the decay time hardly depends on the excitation power. The other is that the rise time becomes considerably faster with increasing excitation power. Moreover, we have found that the inverse of the rise time of the P emission exhibits an almost quadratic dependence on the excitation power. (c) 2006 Elsevier B.V. All rights reserved.


Double-gated spectral snapshots for biomolecular fluorescence
JOURNAL OF LUMINESCENCE,122:297-300 2007(Jan.)
Author:Ryosuke Nakamura; Norio Hamada; Hideki Ichida; Fumio Tokunaga; Yasuo Kanematsu
Abstract:A versatile method to take femtosecond spectral snapshots of fluorescence has been developed based on a double gating technique in the combination of an optical Kerr gate and an image intensifier as an electrically driven gate set in front of a charge-coupled device detector. The application of a conventional optical-Kerr-gate method is limited to molecules with the short fluorescence lifetime up to a few hundred picoseconds, because long-lifetime fluorescence itself behaves as a source of the background signal due to insufficiency of the extinction ratio of polarizers employed for the Kerr gate. By using the image intensifier with the gate time of 200ps, we have successfully suppressed the background signal and overcome the application limit of optical-Kerr-gate method. The system performance has been demonstrated by measuring time-resolved fluorescence spectra for laser dye solution and the riboflavin solution as a typical sample of biomolecule. (c) 2006 Elsevier B.V. All rights reserved.


Visible and near-infrared luminescence from self-assembled lanthanide(III) clusters with organic photo sensitizers
JOURNAL OF LUMINESCENCE,122:262-264 2007(Jan.)
Author:Kazuhiro Manseki; Yasuchika Hasegawa; Yuji Wada; Hideki Ichida; Yasuo Kanematsu; Takashi Kushida
Abstract:Synthesis and photophysical properties of nonanuclear lanthanide(III) clusters, H-10[Ln(9)(hesa)(16)(mu-O)(10)(NO3)] (hesa = hexylsalicylate, Ln = Gd, Tb and Yb) were investigated. By the ligand excitation at 380 nm in methanol, the Tb cluster exhibited luminescence due to the 4f-4f transitions of Tb(III) around 487, 549, 580, 621, 646, 670, and 680 nm (D-5(4) -> 7F(i): i = 6, 5, 4, 3, 2, 1, 0). The Yb cluster also showed the photosensitized luminescence at around 980 nm (F-2(7/2) -> F-5/2). Especially, the Tb cluster gave a high emission quantum yield (Phi(s) > 0.90) in methanol. (c) 2006 Elsevier B.V. All rights reserved.


Temperature dependence of dynamical processes of photoluminescence from exciton-exciton scattering in CuI thin films
JOURNAL OF LUMINESCENCE,119:457-461 2006(Jul.)
Author:H Ichida; KO Mizoguchi; D Kim; Y Kanematsu; M Nakayama
Abstract:We have investigated the time-resolved photoluminescence spectra of the P emission due to exciton-exciton scattering in CuI thin films at various temperatures by using an optical-Kerr-gating method with a time resolution of 0.4 ps. It is found that the rise time of the P emission hardly changes with temperature. Since the rise time reflects collision processes of excitons in the lowest (n = 1) exciton state, the temperature dependence demonstrates that the exciton-collision rate is hardly influenced by temperature. On the other hand, the decay time of the P emission becomes faster from 8 to 5 ps with increasing temperature from 10 to 150K. This is due to the enhancement of the contribution of the photon state away from the polariton-bottleneck region to the photon-like polariton state leading to the P emission owing to thermal broadening in momentum space; namely the photon nature of the photon-like polariton becomes considerable. (c) 2006 Elsevier B.V. All rights reserved.


Inhomogeneity observed in the photocycle of photoactive yellow protein
JOURNAL OF LUMINESCENCE,119:122-126 2006(Jul.)
Author:N Hamada; K Matsumoto; K Soda; R Nakamura; H Ichida; F Tokunaga; Y Kanematsu
Abstract:In order to obtain insight into the hydrogen-bonding network surrounding the chromophore in biologically photofunctional proteins, photoactive yellow protein (PYP) has been modified by a combination of a site-directed mutagenesis and a substitution of the chromophore with an analogue. Fluorescence excitation and emission spectroscopies have been performed to evaluate the inhomogeneous nature of the spectra originated from the variation of conformational substates of the modified proteins. Noticeable inhomogeneity including contributions from two distinct substates has been observed for a PYP hybrid with the E46Q mutation and a substitution of the p-coumaric acid chromophore with caffeic acid. Transient absorption spectroscopy has been also conducted to clarify whether inhomogeneity affects the recovering kinetics or not. For the PYP hybrid, a remarkable difference of the recovery time from the signaling state has been observed, depending on the wavelength of the excitation light triggering the photocycle. Although this observation is preliminary, it indicates that kinetically inhomogeneous species likely exist in the PYP hybrid. (c) 2006 Elsevier B.V. All rights reserved.


Ultrafast photoluminescence dynamics of biexcitons in a CuCl thin film grown by vacuum deposition
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 10,3(10):3464-+ 2006
Author:M. Nakayama; S. Wakaiki; K. Mizoguchi; D. Kim; H. Ichida; Y. Kanematsu
Abstract:We have investigated the ultrafast dynamics of the biexciton photoluminescence (PL) in a 500-nm thick CuCl thin film at 10 K using an optical Kerr gating method with a time resolution of similar to 1 ps. The CuCl thin film was grown by vacuum deposition. It is found that the biexciton-PL intensity has an excitation-power dependent rise time, which reflects the formation process of biexcitons, while its decay time is independent of the excitation power: 6.0 ps that is dominated by the transit time of the exciton polaritons travelling through the thin film. Furthermore, from the time-resolved PL spectra of the biexciton, we have observed a peak shift as a function of time, which is connected with the heating and cooling processes of the effective temperature in the excitonic system. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


Photoluminescence dynamics of exciton-exciton scattering processes in CuI thin films
PHYSICAL REVIEW B,72(4):045210/01-5 2005(Jul.)
Author:H Ichida; Y Kanematsu; T Shimomura; K Mizoguchi; D Kim; M Nakayama
Abstract:We have investigated the dynamical process of exciton-exciton scattering in CuI thin films grown on a (100) NaCl substrate under intense-excitation conditions. The time-integrated photoluminescence spectra clearly exhibit two photoluminescence bands which originate from the excitonic molecule and the inelastic scattering of excitons, so-called P emission. The time-resolved PL spectra obtained by using an optical Kerr gating method show that the peak energy of the P-emission band temporally changes in a picosecond region, which reflects the thermal distribution of excitons. In the time profile of the P-emission band, the rise time that is around 1 ps becomes remarkably fast with increasing excitation power, while the decay time hardly depends on the excitation power. Moreover, we have found that the inverse of the rise time of the P emission exhibits an almost quadratic dependence for the excitation power. This finding suggests that the inverse of the rise time corresponds to the rate of the exciton-exciton scattering.


Entire view of coherent oscillations in ultrafast fluorescence for photoactive yellow protein
ULTRAFAST PHENOMENA XIV,79:607-609 2005
Author:R Nakamura; N Hamada; H Ichida; Y Kanematsu; F Tokunaga
Abstract:Remarkable oscillatory components are observed in the 2-dimentional-time-wavelength map of ultrafast fluorescence for photoactive yellow protein, by using the optical Kerr gating system with 180-fs time resolution and 5-nm spectral resolution.


Bose-Einstein statistics behaviors of exciton-biexciton photoluminescence decay processes in a GaAs/AlAs type-II superlattice
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,21(2-4):651-655 2004(Mar.)
Author:M Nakayama; H Ichida
Abstract:We have investigated the Bose-Einstein (BE) statistics behavior of the exciton-biexciton (EX-BEX) system during the photoluminescence decay processes at 5 K in a (GaAs)(12)/(AlAs)(12) type-II superlattice. Owing to the long lifetime of the type-II exciton, which is of the order of microseconds due to the indirect transition nature, we have precisely evaluated the density relation between the EX and BEX from the line-shape analysis of time-resolved photoluminescence spectra. At an EX density around 1 x 10(10)/cm(2), the BEX density suddenly increases with a threshold-like profile. This behavior is quantitatively explained by the framework of BE statistics of the EX-BEX system. It is demonstrated that the threshold-like increase of the BEX density is recurred by the incidence of a second-excitation pulse with a time delay, which leads to the dynamical control of the BE statistics behavior. (C) 2003 Elsevier B.V. All rights reserved.


Quantum-statistics behavior of the exciton-biexciton system in GaAs/AlAs type-II superlattices
PHASE TRANSITIONS,75(7-8):979-987 2002(Oct.)
Author:M Nakayama; H Ichida
Abstract:We have investigated the quantum-statistics behavior of the exciton-biexciton system from the photoluminescence properties in (GaAs)(m)/(AlAs)(m) type-II superlattices with m = 12 and 13 monolayers, where the lowest-energy type-II exciton consists of the n = 1X electron of AlAs and n = 1Gamma heavy hole of GaAs. The long exciton lifetime of the order of mus due to the indirect transition nature enables us to obtain precisely the density relation between the exciton and biexciton from the line-shape analysis of time-resolved photoluminescence spectra. In a relatively low exciton-density region, the biexciton density obeys a well-known square law. At an exciton density around 1 x 10(10) cm(-2), the biexciton density suddenly increases with a threshold-like nature. This behavior, which is realized at a bath temperature up to 8 K under an excitation power of the order of 100 mW/cm(2), results from the characteristics of Bose-Einstein statistics of the exciton-biexciton system.


Control of Bose-Einstein statistics behavior of the exciton-biexciton system in a GaAs/AlAs type-II superlattice
Nonlinear Optics,29(4-6):203-209 2002(Jun.)
Author:Hideki Ichida; Masaaki Nakayama


Trtansition from biexcitons to electron-hole plasma in photoluminescence properties of a GaAs/AlAs multiple-quantum-well structure
INTERNATIONAL JOURNAL OF MODERN PHYSICS B,15(28-30):3793-3796 2001(Dec.)
Author:H Ichida; K Tsuji; K Mizoguchi; H Nishimura; M Nakayama
Abstract:We report photoluminescence (PL) properties under various excitation-power conditions in a GaAs (15.0 nm)/AlAs(15.0 nm) multiple-quantum-well structure. We have clearly observed the PL bands from the biexciton and electron-hole plasma, and estimated the biexciton binding energy and the band-gap renormalization in the electron-hole plasma. The spectral change of the PL bands as a function of the excitation power demonstrates the transition from the biexciton to the electron-hole plasma under intense excitation conditions.


Boson characteristics of the exciton-biexciton system in a GaAs/AlAs type-II superlattice
JOURNAL OF LUMINESCENCE,94:379-383 2001(Dec.)
Author:H Ichida; M Nakayama
Abstract:We report on the appearance of Bose-Einstein statistics of the exciton-biexciton system in a (GaAs)(12)/(AlAs)(12) type-II superlattice. The density relation of the exciton and biexciton is estimated from time-resolved photoluminescence spectra at various excitation powers and bath temperatures. The long lifetime of the type-II exciton, e.g., 2 mus at 5 K. enables us to obtain the precise information of the density relation. In a relatively low exciton-density region, the biexciton density obeys a well-known square law. At an exciton density around I x 10(10) cm(-2), the biexciton density suddenly increases with a threshold-like nature. This behavior, which is realized at temperatures up to 8 K, can be understood from Bose-Einstein statistics. (C) 2001 Elsevier Science B.V. All rights reserved.


Evidence for quantum statistics of the exciton-biexciton system in a GaAs/AlAs type-II superlattice
PHYSICAL REVIEW B,63(19):195316/01-6 2001(May)
Author:H Ichida; M Nakayama
Abstract:We have investigated the decay processes of the photoluminescence from excitons and biexcitons in a (GaAs)(12)(AlAs)(12) type-II superlattice, where electrons and holes are confined in the X-valley potential of the AlAs layer and in the Gamma -valley potential of the GaAs layer, respectively. The long lifetime of the type-II exciton, e.g., similar to2 mus at a bath temperature of 5 K, enables us to obtain the precise information of the exciton-biexciton density relation estimated from the line-shape analysis of time-resolved photoluminescence spectra. In a relatively low-exciton-density region (a time region later than similar to1 mus), the biexciton density obeys a well-known square law. At an exciton density around 1 x 10(10) cm(-2). the biexciton density suddenly increases with a thresholdlike nature. This behavior can be understood from Bose-Einstein statistics of the exciton-biexciton system. We have examined the quantum-statistics characteristics of the exciton-biexciton system at various excitation powers and bath temperatures. It is found that the quantum-statistics regime is realized at the bath temperature up to 8 K under a low excitation power of the order of 100 mW/cm(2) and that it continues in a long time range of the order of submicroseconds.


Transition from Biexciton to Electron-Hole Plasma in Photoluminescence Properties of a GaAs/AlAs Multiple-Quantum-Well Structure
Int. J. Modern Physics B,15(28-30):3793-3796 2001
Author:H. Ichida; K. Tsuji; K. Mizoguchi; H. Nishimura; M. Nakayama


Trtansition from biexcitons to electron-hole plasma in photoluminescence properties of a GaAs/AlAs multiple-quantum-well structure
PROCEEDINGS OF THE 2000 INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER,:225-228 2001
Author:H Ichida; K Tsuji; K Mizoguchi; H Nishimura; M Nakayama
Abstract:We report photoluminescence (PL) properties under various excitation-power conditions in a GaAs (15.0 nm)/AlAs(15.0 nm) multiple-quantum-well structure. We have clearly observed the PL bands from the biexciton and electron-hole plasma, and estimated the biexciton binding energy and the band-gap renormalization in the electron-hole plasma. The spectral change of the PL bands as a function of the excitation power demonstrates the transition from the biexciton to the electron-hole plasma under intense excitation conditions.


Stimulated emission from exciton-exciton scattering in CuBr thin films
JOURNAL OF LUMINESCENCE,87-9:235-237 2000(May)
Author:H Ichida; M Nakayama; H Nishimura
Abstract:We have investigated the photoluminescence properties under intense-excitation conditions in a CuBr thin film with the thickness of 100 nm grown on a (0 0 0 1) Al2O3 substrate by a vacuum deposition method. We have detected a new photoluminescence band with the intensity dependence on the excitation power exhibiting threshold behavior and almost quadratic characteristics. The threshold power at excitation by a pulsed nitrogen laser is similar to 8 mu J/cm(2) at 10 K, and the emission energy is lower than that of the n = 1 free exciton by the energy difference of the n = 1 and 2 excitons. In addition, we have observed the optical gain in the energy region of the new photoluminescence band. From the above results. we conclude that the new photoluminescence band results from the stimulated emission due to the inelastic scattering between n = 1 excitons, so-called Pt emission. (C) 2000 Elsevier Science B.V. Ail rights reserved.


Thermal-strain-induced splitting of heavy- and light-hole exciton energies in CuI thin films grown by vacuum evaporation
PHYSICAL REVIEW B,60(19):13879-13884 1999(Nov.)
Author:D Kim; M Nakayama; O Kojima; Tanaka, I; H Ichida; T Nakanishi; H Nishimura
Abstract:We hz;ve investigated thermal strain effects on excitons in CuI thin films with a thickness of 10-3000 nm grown by vacuum evaporation onto (0001) Al2O3, fused silica (quartz), and (001) NaCl substrates. The x-ray-diffraction patterns indicate that the crystalline thin film grown on every substrate is preferentially oriented along the [111] crystal axis. All the absorption spectra for the films with a thickness of 10-100 nm clearly show a doublet structure of the heavy-hole and light-hole excitons which are degenerate under a strain-free condition: The heavy-hole exciton has the higher energy for the Al2O3 and quartz substrates, while it has the lower energy for the NaCl one. The splitting energy increases as temperature decreases. This indicates that the in-plane strain, which results from the difference of the thermal expansion coefficients of CuI and the substrate, induces the splitting. The critical layer thickness for the thermal strain relaxation in the: Al2O3 substrate is estimated to be 400 nm from the observed exciton energies as a function of the layer thickness. The shifts of the exciton energies due to the thermal strain effects are successfully analyzed on the basis of a k.p perturbation theory. [S0163-1829(99)04543-9].


Bound-biexciton photoluminescence in CuCl thin films grown by vacuum deposition
JOURNAL OF PHYSICS-CONDENSED MATTER,11(39):7653-7662 1999(Oct.)
Author:M Nakayama; H Ichida; H Nishimura
Abstract:We report on the photoluminescence properties of CuCl thin films with the thicknesses of 20 and 100 nm under intense-excitation conditions produced with a pulsed nitrogen laser. We have clearly observed two photoluminescence bands with a superlinear (almost quadratic) excitation-power dependence. The high-energy band is attributed to the well-known free-biexciton photoluminescence. The excitation-power dependence of the low-energy band exhibits a saturation behaviour when the free-biexciton band grows remarkably. In addition, the energy and shape of the low-energy band do not change with the excitation power, which is contrary to the characteristics of the free-biexciton photoluminescence reflecting the thermal distribution in the energy dispersion. From these facts, we conclude that the origin of the low-energy band is a bound biexciton. Furthermore, we find from the temperature dependence of the PL properties that the thermal dissociation of the bound exciton induces the instability of the bound biexciton.


Photoluminescence of biexcitons and bound biexcitons from CuCl thin films
PROCEEDINGS OF THE THIRD INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER - EXCON '98,98(25):489-494 1998
Author:H Ichida; D Kim; M Nakayama; H Nishimura
Abstract:We have investigated the photoluminescence (PL) properties of CuCl thin films grown by a vacuum deposition under a high-density-excitation conditions with a pulsed nitrogen laser. We have clearly observed the PL band with superlinear excitation-power dependence in the low-energy side of the free-biexciton band. This band has two characteristics with the excitation-power dependence: The intensity exhibits the saturation behavior before the remarkable growth of the free-biexciton band, and the peak energy does not change. From these facts, we conclude that the origin is the bound biexciton: The binding energy is estimated to be 45 +/- 2 meV. In addition, we discuss the thermal stability of the bound biexciton from the temperature dependence of the PL spectra. We find that the thermal stability of the bound biexciton is similar to that of the bound exciton with the lowest binding energy of the exciton complexes.


Epitaxy effects on excitons in CuI thin films
PROCEEDINGS OF THE THIRD INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER - EXCON '98,98(25):477-482 1998
Author:D Kim; Tanaka, I; O Kojima; H Ichida; M Nakayama; H Nishimura
Abstract:We have investigated the absorption and luminescence spectra of the excitons in CuI thin films with thickness of 5-50 nm grown on (0001) Al2O3 and (001) NaCl substrates by vacuum deposition. The observed exciton energies indicate that the crystal structure of the CuI thin films on the Al2O3 substrate is a hexagonal (zincblende) type in the thickness region thinner (thicker) than 9 nm. On the other hand, for the fee-type NaCl substrate, such a crystal-structure change does not occur at any film thickness: All the films have a zincblende structure. In the zincblende-type CuI thin films, the absorption spectra clearly exhibit doublet structures around the Z(1,2) exciton energy. The doublet structures are due to the splitting of the heavy-hole- and light-hole-exciton energies, which are caused by the thermal strains arising from the difference of the thermal expansion coefficients of CuI and the substrate.


講演・口頭発表等
Building a system that enables research institutions to conduct RCR surveys on their initiatives
ENRIO 2023 Congress on Research Integrity Practice 2023(Sep. 08)
Presenter:Masaki Nakamura; Hideki Ichida; Asako Miura; Jin Higashijima


Development of a Questionnaire to Assess the Current State of Research Integrity in Japan
Asia Pacific Research Integrity Network Meeting 2023 Tokyo, Japan 2023(Mar. 21)
Presenter:Masaki Nakamura; Hideki Ichida; Asako Miura; Jin Higashijima; Toshiya Kobayashi; Shoko Yamane; Fumihiko Nakamura; Mei Yamagata


A practical and systematic questionnaire survey to promote research integrity in Japan
Asia Pacific Research Integrity Network Meeting 2023 Tokyo, Japan 2023(Mar. 20)
Presenter:Hideki Ichida; Masaki Nakamura; Asako Miura; Jin Higashijima; Toshiya Kobayashi; Shoko Yamane; Fumihiko Nakamura; Mei Yamagata


MMG 計測筋繊維活動推定量とエコー画像変位量の相関分析による対応の一検討
日本音響学会2021年春季研究発表会 2-1P-18 2021(Mar. 11)
Presenter:大里一矢,山下涼介,石川 直生,上原 正志,樋口 幸, 市田 秀樹,福島 学,石井 秀樹,森竹 隆広,柳川 博文


上腕上部下部同時MMG 計測による筋活動計測の一検討
日本音響学会 2019年秋季研究発表会 1-Q-27 2019(Sep. 04)
Presenter:大里 一矢; 山下 涼介; 石川 直生; 上原 正志; 樋口 幸; 市田 秀樹; 福島 学; 森竹 隆広; 風間 道子; 柳川 博文


筋音計測(MMG)による微小筋肉活動計測に関する一検討
日本音響学会 2019年春季研究発表会 2-Q-49 2019(Mar. 06)
Presenter:大里 一矢; 河合 修平; 上原 正志; 樋口 幸; 市田 秀樹; 福島 学; 森竹 隆広; 風間 道子; 柳川 博文


水熱合成法による ZnS-CuInS2混晶ナノ粒子の作製
第79回応用物理学会秋季学術講演会 20p-PB2-12 2018(Sep. 20)
Presenter:上東洋太; 中谷泰輔; 飯田和貴; 市田秀樹; 金大貴


筋音計測データのPLATE 法による時間・周波数分析に関する一検討
日本音響学会 2018年秋季研究発表会 1-P-42 2018(Sep. 12)
Presenter:大里 一矢; 大塚 柊; 河合 修平; 上原 正志; 樋口 幸; 市田 秀樹; 福島 学; 森竹 隆広; 柳川 博文


Preparation and optical properties of ZnS-CuInS2 quantum dots
EXCON2018 (The 12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials) 2018(Jul. 10)
Presenter:Yota Uehigashi; Taisuke Nakatani; Kazutaka Iida; Hideki Ichida; DaeGwi Kim


水熱合成法により作製したCuInS2 ナノ粒子の発光特性
第65回応用物理学会春季学術講演会 19p-P8-8 2018(Mar. 19)
Presenter:上東 洋太; 飯田 和貴; 市田 秀樹; 金 大貴


科学技術を社会に生かす仕組み作りとその課題: オープンイノベーションの視点から
科学技術社会論学会 第16回年次研究大会 C-1-1(OS) 2017(Nov. 25)
Presenter:市田 秀樹; 松本 康史; 森 淳一; 影山 隆之; 濱中 良志; 伊東 朋子; 東島 仁


高大社の協働講座による地域人材育成の可能性
大学教育学会第39回大会 2017(Jun. 11)
Presenter:吉村充功; 島岡成治; 近藤正一; 橋本堅次郎; 池畑義人; 市田秀樹; 鈴木照夫


地域企業求人動画制作を通した地域創生人材の育成~日本文理大学COC事業による“おおいた,つくりびと”プロジェクト~
第65回九州地区大学教育研究協議会 2016(Sep. 03)
Presenter:市田秀樹; 鈴木照男; 小牧渉; 泉丙完; 吉村充功


コロイド法により作製したCdTe/CdSナノ粒子の光学特性の温度依存性
日本物理学会 第70回年次大会 23pPSA-44 2015(Mar. 23)
Presenter:渡辺 太一; 市田 秀樹; 高橋 幸司; 志村 邦夫; 中山 正昭; 金 大貴


ZnO薄膜における励起子間散乱から発光に至るまでのダイナミクス
日本物理学会 第70回年次大会 21pCP-12 2015(Mar. 21)
Presenter:若生 周治; 市田 秀樹; 馬場 基彰; 川瀬 稔貴; 川上 将輝; 溝口 幸司; 金 大貴; 中山 正昭; 兼松 泰男


共鳴準位より低いエネルギーに散乱された励起子は速やかにポラリトンになるのか?
日本物理学会 第70回年次大会 21pCP-11 2015(Mar. 21)
Presenter:馬場 基彰; 若生 周治; 市田 秀樹; 溝口 幸司; 金 大貴; 中山 正昭; 兼松 泰男


コロイド法により作製したCdTeナノ粒子の光学特性の温度依存性
日本物理学会 2014年秋季大会 10aPS-33 2014(Sep. 10)
Presenter:渡辺 太一; 市田 秀樹; 高橋 幸司; 志村 邦夫; 中山 正昭; 金 大貴


P-emission decay in ZnO from bulk to nanofilm
ICSCE-7(The 7th International Conference on Spontaneous Coherence in Excitonic Systems) 2014(Apr. 23)
Presenter:M. Bamba; S. Wakaiki; H. Ichida; M. Kawakami; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu


ZnO薄膜における励起子-励起子散乱発光ダイナミクスの膜厚依存性
日本物理学会 第69回年次大会 27aCD-14 2014(Mar. 27)
Presenter:若生 周治; 市田 秀樹; 馬場 基彰; 川瀬 稔貴; 川上 将輝; 溝口 幸司; 金 大貴; 中山 正昭; 兼松 泰男


Peculiar thickness-dependent behavior of the ultrafast P-emission dynamics for ZnO thin films I
DPC'13(18th International Conference on Dynamical Processes in Excited States of Solids) 2013(Aug. 08)
Presenter:S. Wakaiki; H. Ichida; T. Kawase; M. Kawakami; M. Bamba; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu


ZnO薄膜における励起子-励起子散乱発光の時間分解発光特性
日本物理学会 第68回年次大会 28pEJ-13 2013(Mar. 28)
Presenter:若生 周治; 市田 秀樹; 川瀬 稔貴; 川上 将輝; 溝口 幸司; 金 大貴; 中山 正昭; 兼松 泰男


有機・無機複合半導体(C_4H_9NH_3)_2PbBr_4における励起子・励起子分子発光の緩和過程
日本物理学会 2012年秋季大会 18aPSB-28 2012(Sep. 18)
Presenter:山本 康男; 大畠 悟郎; 溝口 幸司; 市田 秀樹; 兼松 泰男


CuBrマイクロキャビティにおけるポラリトンレーザー発振
日本物理学会 2012年秋季大会 18pHB-8 2012(Sep. 18)
Presenter:川瀬 稔貴; 金谷 侑佳; 市田 秀樹; 若生 周治; 金 大貴; 兼松 泰男; 中山 正昭


Slow propagation of photon-like polaritons generated by exciton-exciton scattering in ZnO thin films
UP2012 (18th International Conference on Ultrafast Phenomena) 2012(Jul. 09)
Presenter:H. Ichida; S. Wakaiki; T. Kawase; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu


Thickness dependence of photoluminescence-decay profiles of exciton-exciton scattering in ZnO thin films
10th International Conference on Excitonic Processes in Condensed Matter, Nanostructured and Molecular Materials: EXCON2012 2012(Jul. 03)
Presenter:S. Wakaiki; H. Ichida; T. Kawase; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu


ZnO薄膜における励起子−励起子散乱発光寿命の膜厚依存性
第59回応用物理学関係連合講演会 2012(Mar. 16)
Presenter:若生周治; 市田秀樹; 川瀬稔貴; 溝口幸司; 金大貴; 中山正昭; 兼松泰男


LiNbO_3におけるテラヘルツフォノンポラリトンの検出波長依存性(24aTL 非線形光学・高密度励起,領域5(光物性))
日本物理学会 2011年秋季大会 24aTL-4 2011(Sep. 24)
Presenter:堺原 弘行; 片山 郁文; 市田 秀樹; 兼松 泰男; 武田 淳


フェムト秒近赤外光から波形制御中赤外光への高効率変換のための分極反転構造
日本物理学会 2011年秋季大会 21pPSA-41 2011(Sep. 21)
Presenter:中村 亮介; 市田 秀樹; 兼松 泰男


KI結晶中のAg^-センターにおけるヤン・テラー歪みに起因した断熱ポテンシャル間の緩和過程
日本物理学会 2011年秋季大会 21pPSA-65 2011(Sep. 21)
Presenter:平山 景太; 河相 武利; 市田 秀樹; 兼松 泰男; 溝口 幸司


ZnO薄膜における電子・正孔プラズマ発光から励起子・励起子散乱発光への動的変遷過程
日本物理学会 2011年秋季大会 21pPSB-15 2011(Sep. 21)
Presenter:若生 周治; 市田 秀樹; 溝口 幸司; 金 大貴; 兼松 泰男; 中山 正昭


Photoluminescence dynamics originating from exciton-exciton and exciton-electron scattering in a GaN thin film
5th International Conference on Optical, Optoelectronic and Photonic Materials and Applications: ICOOPMA2012 2011(Jun. 28)
Presenter:S. Wakaiki; H. Tokumaru; H. Ichida; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama


Photoluminescence Dynamics due to Biexciton and Exciton-Exciton Scattering Process in Layered-type Semiconductor PbI2
16th International Conference on Luminescence & Optical Spectroscopy of Condensed Matter: ICL'11 2011(Jun. 28)
Presenter:M. Ando; M. Yazaki; I. Katayama; H. Ichida; S. Wakaiki; Y.Kanematsu; J. Takeda


Single-Shot Time-Frequency Imaging of Phonon-Polariton Dispersion in Ferroelectric LiNbO3
CLEO 2011: Laser Science to Photonic Applications 2011(May 01)
Presenter:I. Katayama; H. Sakaibara; H. Ichida; Y. Kanematsu; J. Takeda


LiNbO_3におけるフォノンポラリトン分散のシングルショット時間周波数イメージング計測
日本物理学会 第66回年次大会 26aHA-4 2011(Mar. 26)
Presenter:堺原 弘行; 片山 郁文; 市田 秀樹; 兼松 泰男; 武田 淳


層状半導体PbI_2における励起子・励起子散乱及び励起子分子の発光ダイナミクスII
日本物理学会 第66回年次大会 25pPSA-46 2011(Mar. 25)
Presenter:安藤 光健; 片山 郁文; 市田 秀樹; 若生 周治; 兼松 泰男; 武田 淳


KI:Ag^-における過渡吸収分光
日本物理学会 2010年秋季大会 25pPSB-54 2010(Sep. 25)
Presenter:平山 景太; 河相 武利; 市田 秀樹; 兼松 泰男; 溝口 幸司


Photoluminescence decay profiles of exciton-exciton scattering in a ZnO thin film
9th International Conference on Excitonic and Photonic Processes in Condensed and Nano Materials: EXCON10 2010(Jul. 13)
Presenter:S. Wakaiki; H. Ichida; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama


Pump-Dump-蛍光スペクトルにおけるRed-edge dumping[IV]
日本物理学会 第65回年次大会 23aPS-32 2010(Mar. 23)
Presenter:市田 秀樹; 中村 亮介; 濱田 格雄; 兼松 泰男


ZnO薄膜における励起子−励起子散乱発光寿命の発光エネルギー依存性
第57回応用物理学関係連合講演会 2010(Mar. 19)
Presenter:若生周治; 市田秀樹; 溝口幸司; 金大貴; 兼松泰男; 中山正昭


Pump-Dump-蛍光スペクトルにおけるRed-edge dumping [III]
日本物理学会 2009年秋季大会 27aPS-39 2009(Sep. 27)
Presenter:市田 秀樹; 中村 亮介; 濱田 格雄; 兼松 泰男


KI:Ag^-の発光ダイナミクス
日本物理学会 2009年秋季大会 27aPS-51 2009(Sep. 27)
Presenter:平山 景太; 河相 武利; 市田 秀樹; 兼松 泰男; 溝口 幸司


Pump-Dump-蛍光スペクトルにおけるRed-edge dumping[I]
日本物理学会 第64回年次大会 30pVA-1 2009(Mar. 30)
Presenter:市田 秀樹; 中村 亮介; 濱田 格雄; 兼松 泰男


Pump-Dump-蛍光スペクトルにおけるRed-edge dumping [II]
日本物理学会 第64回年次大会 28pPSA-22 2009(Mar. 28)
Presenter:兼松 泰男; 市田 秀樹; 濱田 格雄; 中村 亮介


固定化された蛋白質の動きの観察
日本物理学会 2008年秋季大会 20aPS-96 2008(Sep. 20)
Presenter:濱田 格雄; 市田 秀樹; 中村 亮介; 井尻 宏志; 森 肇; 兼松 泰男


整形光パルス列による分子認識
日本物理学会 2008年秋季大会 20aYG-10 2008(Sep. 20)
Presenter:兼松 泰男; 市田 秀樹; 谷川 健人; 濱田 格雄; 中村 亮介


Time-resolved photoluminescence spectra of electron-hole plasma coupled to longitudinal optical phonons in ZnO thin film
The 15th International Conference on Luminescence and OpticalSpectroscopy of Condensed Matter: ICL08 2008(Jul. 09)
Presenter:H. Ichida; S. Wakaiki; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama


Ultrafast Dynamics of Electron-Hole Plasma Coupled to Optical Phonons in a ZnO Thin Film
16th International Conference on Ultrafast Phenomena: UP2008 2008(Jun. 10)
Presenter:H. Ichida; S. Wakaiki; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama


ZnO薄膜における電子・正孔プラズマ状態特有のフォノンサイドバンドの過渡吸収特性
日本物理学会 第63回年次大会 26aPS-46 2008(Mar. 26)
Presenter:市田 秀樹; 若生 周治; 溝口 幸司; 金 大貴; 兼松 泰男; 中山 正昭


光受容蛋白の光誘起初期ダイナミクス : 励起波長依存性
日本物理学会 第63回年次大会 26aPS-33 2008(Mar. 26)
Presenter:中村 亮介; 濱田 格雄; 市田 秀樹; 徳永 史生; 兼松 泰男


蛋白質結晶のテラヘルツ振動
日本物理学会 第63回年次大会 23pYD-3 2008(Mar. 23)
Presenter:兼松 泰男; 中村 亮介; 市田 秀樹; 濱田 格雄; 菅原 洋子; 安宅 光男; 占部 久子


KI結晶中のAg^-センターにおける断熱ポテンシャル間の緩和過程
日本物理学会 第63回年次大会 26aPS-35 2008(Feb. 29)
Presenter:河相 武利; 市田 秀樹; 兼松 泰男; 溝口 幸司


昆虫ウイルス由来タンパク質ポリヘドリンを用いた外来タンパク質固定化技術の開発
第45回日本生物物理学会年会 1P325 2007(Dec. 21)
Presenter:濱田 格雄; 中村 亮介; 井尻 宏志; 中井 大介; 赤木 祐一郎; 日比 華子; 広畠 利江; 市田 秀樹; 徳永 史生; 兼松 泰男; 森 肇


ラマン散乱およびテラヘルツ分光によるリゾチームおよびBRTI結晶の低振動数モードの観測
第45回日本生物物理学会年会 1P353 2007(Dec. 21)
Presenter:市田 秀樹; 中村 亮介; 濱田 格雄; 菅原 洋子; 安宅 光雄; 占部 久子; 兼松 泰男


Low frequency modes of proteins observed by Raman scattering and terahertz spectroscopy
The 6th International Conference on Biological Physics: ICBP2007 2007(Sep. 28)
Presenter:Y. Kanematsu; R. Nakamura; H. Ichida; N. Hamada; Y. Sugawara; M. Ataka; H. Urabe


ZnO薄膜における電子・正孔プラズマ状態特有のフォノンサイドバンド発光のダイナミクス
日本物理学会 第62回年次大会 23pPSB-12 2007(Sep. 23)
Presenter:市田 秀樹; 若生 周治; 溝口 幸司; 金 大貴; 兼松 泰男; 中山 正昭


チャープパルスを用いたパンプ・ダンプ分光
日本物理学会 第62回年次大会 23pPSA-101 2007(Sep. 23)
Presenter:中村 亮介; 濱田 格雄; 市田 秀樹; 徳永 史生; 兼松 泰男


ラマン散乱およびテラヘルツ分光による蛋白質結晶の低振動数モードの観測
日本物理学会 第62回年次大会 21aRK-5 2007(Sep. 21)
Presenter:兼松 泰男; 中村 亮介; 市田 秀樹; 濱田 格雄; 菅原 洋子; 安宅 光男; 占部 久子


電流注入型Er,O共添加GaAs発光デバイスにおけるEr励起プロセスの評価
第68回応用物理学会学術講演会 2007(Sep. 04)
Presenter:藤田麻史; 徳野剛大; 日高圭二; 市田秀樹; 寺井慶和; 兼松泰男; 藤原康文


Ultrafast Photoluminescence Dynamics in ZnO Thin Films under Intense Excitation COnditions
16th International Conference on Dynamical Processes in Excited States of Solids: DPC07 2007(Jun. 18)
Presenter:H. Ichida; S. Wakaiki; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama


Er,O共添加GaAsにおけるEr発光強度の測定温度依存性
第54回応用物理学関係連合講演会 2007(Mar. 30)
Presenter:藤田麻史; 徳野剛大; 日高圭二; 藤井 慧; 橘 康介; 市田秀樹; 寺井慶和; 兼松泰男; 藤原康文


光カーゲート法を用いたZnO薄膜の時間分解発光スペクトル(III) : 温度依存性
日本物理学会 2007年春季大会 19pPSB-21 2007(Mar. 19)
Presenter:若生 周治; 市田 秀樹; 溝口 幸司; 金 大貴; 兼松 泰男; 中山 正昭


パンプ・ダンプ蛍光分光による光受容蛋白質の初期ダイナミクス
日本物理学会 2007年春季大会 19aZA-4 2007(Mar. 19)
Presenter:兼松 泰男; 中村 亮介; 濱田 格雄; 市田 秀樹; 徳永 史生


光受容蛋白質における水素結合ネットワークが発色団電子状態に与える効果
日本物理学会 2007年春季大会 19pTC-10 2007(Mar. 19)
Presenter:岡本 健太郎; 中村 亮介; 市田 秀樹; 濱田 格雄; 岡村 高明; 山本 仁; 兼松 泰男


ZnO薄膜における高密度励起条件での時間分解発光と過渡吸収特性
日本物理学会 2007年春季大会 18pZB-8 2007(Mar. 18)
Presenter:市田 秀樹; 若生 周治; 溝口 幸司; 金 大貴; 兼松 泰男; 中山 正昭


The first observation of THz time-domain reflection spectra of lysozyme crystals
Fifth East Asian Biophysics Symposium & Forty-Fourth Annual Meeting of the Biophysical Society of Japan 2P504 2006(Nov. 15)
Presenter:H. Ichida; R. Nakamura; Y. Sugawara; H. Urabe; Y. Kanematsu


Pump-dump fluorescence spectroscopy for photoactive yellow protein
Fifth East Asian Biophysics Symposium & Forty-Fourth Annual Meeting of the Biophysical Society of Japan 1P437 2006(Nov. 13)
Presenter:Y. Kanemtsu; R. Nakamura; N. Hamada; H. Ichida; F. Tokunga


Enhancement of photoreaction in Photoactive Yellow Protein by infrared laser pulse irradiation
Fifth East Asian Biophysics Symposium & Forty-Fourth Annual Meeting of the Biophysical Society of Japan 1P438 2006(Nov. 13)
Presenter:S. ida; H. Ichida; R. Nakamura; N. Hamada; Y. Kanematsu; F. Tokunada


光カーゲート法を用いたZnO薄膜の時間分解発光スペクトル(I) : 励起強度依存性
日本物理学会 2006年秋季大会 25pWB-8 2006(Sep. 25)
Presenter:若生 周治; 市田 秀樹; 溝口 幸司; 金 大貴; 兼松 泰男; 中山 正昭


光カーゲート法を用いたZnO薄膜の時間分解発光スペクトル(II) : 励起エネルギー依存性
日本物理学会 2006年秋季大会 25pWB-9 2006(Sep. 25)
Presenter:市田 秀樹; 若生 周治; 溝口 幸司; 金 大貴; 兼松 泰男; 中山 正昭


水素結合ネットワークによる光受容蛋白質の電子状態制御(24pPSB 領域12ポスターセッション,領域12(ソフトマター物理,化学物理,生物物理))
日本物理学会 2006年秋季大会 24pPSB-24 2006(Sep. 24)
Presenter:岡本 健太郎; 中村 亮介; 市田 秀樹; 濱田 格雄; 岡村 高明; 山本 仁; 兼松 泰男


THz分光法を用いた光受容蛋白質の低振動数モードの観測
日本物理学会 2006年秋季大会 23pRC-4 2006(Sep. 23)
Presenter:兼松 泰男; 市田 秀樹; 中村 亮介; 菅原 洋子; 占部 久子


光受容蛋白質のPUMP-DUMP分光
日本物理学会 2006年秋季大会 23pRC-3 2006(Sep. 23)
Presenter:中村 亮介; 濱田 格雄; 市田 秀樹; 徳永 史生; 兼松 泰男


光受容蛋白質PYPの光反応サイクルに対する赤外光照射効果(II)
日本物理学会 2006年秋季大会 23pRC-2 2006(Sep. 23)
Presenter:位田 卓; 市田 秀樹; 濱田 格雄; 中村 亮介; 兼松 泰里; 徳永 史生


電流注入型Er,O共添加GaAs発光デバイスにおけるEr励起断面積の測定温度依存性
第67回応用物理学会学術講演会 2006(Aug. 30)
Presenter:徳野剛大; 河村晋吾; 市田秀樹; 寺井慶和; 小泉 淳; 竹田美和; 兼松泰男; 藤原康文


CuI薄膜における励起子-励起子散乱発光ダイナミクスの励起エネルギー依存性
日本物理学会 第61回年次大会 28aPS-19 2006(Mar. 28)
Presenter:市田 秀樹; 溝口 幸司; 金 大貴; 兼松 泰男; 中山 正昭


蛋白多角体の性質
日本物理学会 第61回年次大会 28pPSB-66 2006(Mar. 28)
Presenter:濱田 格雄; 中村 亮介; 市田 秀樹; 徳永 史生; 森 肇; 兼松 泰男


光受容蛋白質PYPの光反応サイクルに対する赤外光照射効果
日本物理学会 第61回年次大会 28pPSB-57 2006(Mar. 28)
Presenter:位田 卓; 市田 秀樹; 濱田 格雄; 中村 亮介; 兼松 泰男; 徳永 史生


蛋白質の光誘起構造変調III
日本物理学会 第61回年次大会 28pPSB-56 2006(Mar. 28)
Presenter:中村 亮介; 濱田 格雄; 市田 秀樹; 徳永 史生; 兼松 泰男


光受容蛋白質の分子相互作用解析(27pTH 生物物理,領域12(ソフトマター物理,化学物理,生物物理))
日本物理学会 第61回年次大会 27pTH-6 2006(Mar. 27)
Presenter:松本 健吾; 濱田 格雄; 市田 秀樹; 中村 亮介; 兼松 泰男; 徳永 史生


Er,O共添加GaAsにおけるEr光励起断面積の酸素濃度依存性
第53回応用物理学関係連合講演会 2006(Mar. 23)
Presenter:徳野剛大; 河村晋吾; 市田秀樹; 寺井慶和; 小泉 淳; 竹田美和; 兼松泰男; 藤原康文


多角体の物性
第43回日本生物物理学会年会 3P340 2005(Nov. 25)
Presenter:濱田 格雄; 中村 亮介; 市田 秀樹; 兼松 泰男; 徳永 史生; 森 肇


光受容蛋白質のPump-Dump-蛍光分光
第43回日本生物物理学会年会 2P295 2005(Nov. 24)
Presenter:中村 亮介; 岡藤 麻子; 濱田 格雄; 市田 秀樹; 徳永 史生; 兼松 泰男


赤外光照射による光受容蛋白質PYPの光構造変調
第43回日本生物物理学会年会 1P262 2005(Nov. 23)
Presenter:市田 秀樹; 松本 健吾; 濱田 格雄; 中村 亮介; 徳永 史生; 兼松 泰男


光受容蛋白質の蛍光励起エネルギー移動の解析
日本物理学会 2005年秋季大会 22pPSA-3 2005(Sep. 22)
Presenter:濱田 格雄; 中村 亮介; 市田 秀樹; 松本 健吾; 徳永 史生; 兼松 泰男


蛋白質の光誘起構造変調I : Pump-Dump-蛍光法
日本物理学会 2005年秋季大会 21pXG-1 2005(Sep. 21)
Presenter:中村 亮介; 濱田 格雄; 市田 秀樹; 徳永 史生; 兼松 泰男


蛋白質の光構造変調II
日本物理学会 2005年秋季大会 21pXG-2 2005(Sep. 21)
Presenter:市田 秀樹; 中村 亮介; 濱田 格雄; 松本 健吾; 徳永 史生; 兼松 泰男


Cul薄膜における励起子-励起子散乱発光ダイナミクスの温度依存性
日本物理学会 2005年秋季大会 20aXB-3 2005(Sep. 20)
Presenter:市田 秀樹; 溝口 幸司; 金 大貴; 兼松 泰男; 中山 正昭


Er,O共添加GaAsにおけるEr光励起断面積の抑制機構
第66回応用物理学会学術講演会 2005(Sep. 09)
Presenter:徳野剛大; 市田秀樹; 寺井慶和; 小泉 淳; 竹田美和; 兼松泰男; 藤原康文


Temperature dependence of dynamical processes of photoluminescence from exciton-exciton scattering in CuI thin films
15th International Conference on Dynamical Processes in Exited States of Solids: DPC2005 2005(Aug. 03)
Presenter:H. Ichida; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama


Inhomogeneity of Signaling States in the Photocycle of Photoactive Yellow Protein
15th International Conference on Dynamical Processes in Exited States of Solids: DPC2005 2005(Aug. 01)
Presenter:K. Matsumoto; N. Hamada; K. Soda; H. Ichida; R. Nakamura; Y. Kanematsu; F. Tokunaga


First observation of fluorescence from a photo-induced intermediate state in photoactive yellow protein
15th International Conference on Dynamical Processes in Exited States of Solids: DPC2005 2005(Aug. 01)
Presenter:A. Okafuji; N. Hamada; K. Soda; K. Matsumoto; H. Ichida; R. Nakamura; F. Tokunaga; Y. Kanematsu


Dynamical process of exciton-exciton scattering in CuI thin films
The 14th International Conference on Luminescence:ICL05 2005(Jul. 27)
Presenter:H. Ichida; T. Shimomura; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama


Visible and near-infrared luminescence from self-assembled lanthanide(III) clusters with organic photosensitizers
The 14th International Conference on Luminescence:ICL05 2005(Jul. 27)
Presenter:K. Manseki; Y. Hasegawa; Y. Wada; H. Ichida; Y. Kanematsu; T. Kushida


Double-gated spectral snapshots for biomolecular fluorescence
The 14th International Conference on Luminescence:ICL05 2005(Jul. 27)
Presenter:R. Nakamura; N. Hamada; H. Ichida; F. Tokunaga; Y. Kanematsu


蛋白質の相互作用評価I
日本物理学会 第60回年次大会 27aPS-87 2005(Mar. 27)
Presenter:曽田 幸司; 松本 健吾; 濱田 格雄; 市田 秀樹; 中村 亮介; 兼松 泰男; 徳永 史生


蛋白質の相互作用評価II
日本物理学会 第60回年次大会 27aPS-88 2005(Mar. 27)
Presenter:濱田 格雄; 曽田 幸司; 松本 健吾; 市田 秀樹; 中村 亮介; 兼松 泰男; 徳永 史生; 森 肇


細胞外マトリックス評価へ向けた時間分解励起-蛍光分光法の開発
日本物理学会 第60回年次大会 27aPS-100 2005(Mar. 27)
Presenter:中村 亮介; 濱田 格雄; 市田 秀樹; 兼松 泰男; 徳永 史生


Cul薄膜における励起子-励起子散乱発光のダイナミクス(II)
日本物理学会 第60回年次大会 24pXQ-8 2005(Mar. 24)
Presenter:市田 秀樹; 下村 剛哉; 溝口 幸司; 金 大貴; 兼松 泰男; 中山 正昭


Er,O共添加GaAsにおけるEr光励起断面積の評価
第52回応用物理学関係連合講演会 2005(Mar. 23)
Presenter:市田秀樹; 徳野剛大; 小泉 淳; 竹田美和; 兼松泰男; 藤原康文


過渡吸収測定によるアナログPYPの光反応戻り過程の解析
第42回日本生物物理学会年会 2P263 2004(Dec. 14)
Presenter:曽田 幸司; 濱田 格雄; 市田 秀樹; 中村 亮介; 松本 健吾; 兼松 泰男; 徳永 史生


疎水プローブによるPYP M中間体における構造変化の検出
第42回日本生物物理学会年会 2P264 2004(Dec. 14)
Presenter:松本 健吾; 濱田 格雄; 市田 秀樹; 中村 亮介; 兼松 泰男; 徳永 史生


水素結合ネットワーク改変による光受容蛋白質の蛍光スペクトル解析
第42回日本生物物理学会年会 2P265 2004(Dec. 14)
Presenter:濱田 格雄; 中村 亮介; 市田 秀樹; 曽田 幸司; 松本 健吾; 兼松 泰男; 徳永 史生


THz 分光法を用いた光受容蛋白質の低振動数モードの観測
日本物理学会 2004年秋季大会 14aPS-76 2004(Sep. 14)
Presenter:市田 秀樹; 山田 寛士; 濱田 格雄; 中村 亮介; 兼松 泰男; 徳永 史生


アミノ酸残基を用いた蛋白質蛍光プローブ法の開発
日本物理学会 2004年秋季大会 14aPS-77 2004(Sep. 14)
Presenter:濱田 格雄; 市田 秀樹; 中村 亮介; 兼松 泰男; 徳永 史生


多重分光情報の一括取得・処理システムの構築 : (時間分解)励起-蛍光マトリックス
日本物理学会 2004年秋季大会 14aPS-78 2004(Sep. 14)
Presenter:中村 亮介; 濱田 格雄; 市田 秀樹; 曽田 幸司; 松本 健吾; 兼松 泰男; 徳永 史生


光受容蛋白質 PYP 結晶の光修飾効果
日本物理学会 2004年秋季大会 14aPS-79 2004(Sep. 14)
Presenter:松本 健吾; 市田 秀樹; 濱田 格雄; 中村 亮介; 兼松 泰男; 徳永 史生


CuI 薄膜における励起子-励起子散乱発光のダイナミクス
日本物理学会 2004年秋季大会 13pPSA-36 2004(Sep. 13)
Presenter:下村 剛哉; 溝口 幸司; 金 大貴; 市田 秀樹; 兼松 泰男; 中山 正昭


超高速スペクトログラムスコープを用いたシングルショット分光
日本物理学会 2004年秋季大会 13pPSA-84 2004(Sep. 13)
Presenter:市田 秀樹; 大西 岳仁; 谷村 和紀; 兼松 泰男; 小西 毅


Ultrafast Coherent Vibrational Motion of Photoactive Yellow Protein Molecules
The 5th International Conference on Biological Physics: ICBP2004 2004(Aug. 23)
Presenter:Y. Kanematsu; R. Nakamura; N. Hamada; H. Ichida; F. Tokunaga


THz-time-domain-reflection spectroscopy of D96N bacteriorhodopsin
The 5th International Conference on Biological Physics: ICBP2004 2004(Aug. 23)
Presenter:H. Ichida; H. Yoshitomi; N. Hamada; R. Nakamura; F. Tokunaga; Y. Kanematsu


Entire view of coherent oscillations in ultrafast fluorescence for photoactive yellow protein
14th International Conference on Ultrafast Phenomena 2004(Jul. 29)
Presenter:R. Nakamura; N. Hamada; H. Ichida; Y. Kanematsu; F. Tokunaga


光受容蛋白質を用いたTHz分光測定の試み
日本物理学会 第59回年次大会 30aPS-31 2004(Mar. 30)
Presenter:吉富 寛; 市田 秀樹; 濱田 格雄; 熊内 雅人; 中村 亮介; 兼松 泰男; 徳永 史生


光受容蛋白質PYPの結晶状態における分光学的特性
日本物理学会 第59回年次大会 29pPSB-22 2004(Mar. 29)
Presenter:市田 秀樹; 濱田 格雄; 中村 亮介; 兼松 康男; 徳永 史生


新規蛋白質プローブ法の開発
日本物理学会 第59回年次大会 29pPSB-24 2004(Mar. 29)
Presenter:松本 健吾; 濱田 格雄; 中村 亮介; 市田 秀樹; 兼松 泰男; 徳永 史生


蛍光測定による光受容蛋白質の光反応過程追跡
日本物理学会 第59回年次大会 29pPSB-25 2004(Mar. 29)
Presenter:曽田 幸司; 濱田 格雄; 中村 亮介; 市田 秀樹; 兼松 泰男; 徳永 史生


水素結合ネットワーク改変による光受容蛋白質の蛍光スペクトル解析
日本物理学会 第59回年次大会 29pPSB-27 2004(Mar. 29)
Presenter:濱田 格雄; 中村 亮介; 市田 秀樹; 曽田 幸司; 松本 健吾; 吉富 寛; 山田 寛士; 兼松 泰男; 徳永 史生


プローブ導入による光受容蛋白質の蛍光スペクトル解析
日本物理学会 第59回年次大会 29pPSB-35 2004(Mar. 29)
Presenter:山田 寛士; 熊内 雅人; 濱田 格雄; Zheng Xiang-Guo; Park Il Ho; 中村 亮介; 市田 秀樹; 兼松 泰男; 吉原 和雄; 徳永 史生


光受容蛋白質の超高速ダイナミクス
日本物理学会 第59回年次大会 29pPSB-29 2004(Mar. 03)
Presenter:中村 亮介; 濱田 格雄; 市田 秀樹; 曽田 幸司; 松本 健吾; 兼松 泰男; 徳永 史生


バクテリオロドプシンの光反応サイクルと配向性の光学的特性 I
日本物理学会 2003年秋季大会 23aPS-81 2003(Sep. 23)
Presenter:中村 亮介; 濱田 格雄; 市田 秀樹; 兼松 泰男; 徳永 史生


バクテリオロドプシンの光反応サイクルと配向性の光学的特性 II
日本物理学会 2003年秋季大会 23aPS-82 2003(Sep. 23)
Presenter:濱田 格雄; 中村 亮介; 市田 秀樹; 兼松 泰男; 徳永 史生


光カーゲート法を用いたサブ 100fs 時間分解蛍光測定
日本物理学会 2003年秋季大会 22pPSA-71 2003(Sep. 22)
Presenter:市田 秀樹; 中村 亮介; 濱田 格雄; 兼松 康男


Bose-Einstein Statistics Behaviors of Exciton-Biexciton Photoluminescence Decay Processes in a GaAs/AlAs Type-II Superlattice
The 11th International Conferenceon Modulated Semiconductor Structures 2003(Jul. 14)
Presenter:M. Nakayama; H. Ichida


光受容蛋白質における光反応中間体の蛍光スペクトル
日本物理学会 第58回年次大会 29aZD-10 2003(Mar. 29)
Presenter:曽田 幸司; 濱田 格雄; 中村 亮介; 市田 秀樹; 兼松 泰男; 徳永 史生


Control of Bose-Einstein-statistics behavior of the exciton-biexciton system in a GaAs/AlAs type-II superlattice
5th International Conference on Excitonic Processes in Condensed Matter: EXCON'02 2002(Jul. 25)
Presenter:H. Ichida; M. Nakayama


GaAs/AlAsタイプ-II超格子における励起子-励起子分子のボース統計性の制御
日本物理学会 第57回年次大会 24pWE-8 2002(Mar. 24)
Presenter:市田 秀樹; 中山 正昭


GaAS/AlAsタイプ-II超格子のシュタルク階段発光に対する界面効果
日本物理学会 2001年秋季大会 19aYJ-3 2001(Sep. 19)
Presenter:市田 秀樹; 福田 一人; 中山 正昭; 堂本 千秋; 會田 田人


GaAs/AlAsタイプ-II超格子における励起子-励起子分子のポース統計性 (II)
日本物理学会 2001年秋季大会 18aPS-31 2001(Sep. 18)
Presenter:市田 秀樹; 中山 正昭


Boson characteristics of the exciton-biexciton system in a GaAs/AlAs type-II superlattice
International Conference on Dynamical Processes in Excited States of Solids: DPC'01 2001(Jul. 04)
Presenter:H. Ichida; M. Nakayama


GaAs/AlAs超格子におけるミニバンド端からの発光
日本物理学会 第56回年次大会 28pTB-3 2001(Mar. 28)
Presenter:山本 隆二; 市田 秀樹; 溝口 幸司; 中山 正昭


GaAs/AlASタイプ-II超格子における励起子-励起子分子のボース統計性
日本物理学会 第56回年次大会 28pYA-8 2001(Mar. 28)
Presenter:市田 秀樹; 中山 正昭


GaAs/AlAsタイプ-II 超格子における励起子-励起子分子系の異常分布
日本物理学会 第55回年次大会 23pRA-15 2000(Sep. 23)
Presenter:市田 秀樹; 中山 正昭


Transition from biexcitons to electron-hole plasma in photoluminescence properties of a GaAs/AlAs multiple-quantum-well structure
4th International Conference on Excitonic Processes in Condensed Matter EXCON'00 2000(Aug. 22)
Presenter:H. Ichida; K. Tsuji; K. Mizoguchi; H. Nishimura; M. Nakayama


GaAs/AlAsタイプ-I超格子における強励起条件での発光特性
日本物理学会 2000年春の分科会 24aL-9 2000(Mar. 24)
Presenter:辻 賢作; 市田 秀樹; 溝口 幸司; 中山 正昭; 西村 仁


GaAs/AlAsタイプ-II超格子におけるタイプ-I電子・正孔プラズマ発光
日本物理学会 1999年秋季大会 25aC-10 1999(Sep. 25)
Presenter:市田 秀樹; 中山 正昭; 西村 仁


Stimulated emission from exciton-exciton scattering in CuBr thin films
Int. Conf. on Luminescence and Optical Spectroscopy of Condensed Matter: ICL99 1999(Aug. 26)
Presenter:H. Ichida; M. Nakayama; H. Nishimura


GaAs/AlAsタイプ-II超格子における高密度励起状態の発光特性(III)
日本物理学会 第54回年次大会 31p-ZH-6 1999(Mar. 31)
Presenter:市田 秀樹; 中山 正昭; 西村 仁


Photoluminescence of Biexcitons and Bound Biexcitons from CuCl Thin Films
The third international conference on excitonic processes in condensed matter: EXCON ’98 1998(Nov. 04)
Presenter:H. Ichida; D. Kim; M. Nakayama; H. Nishimura


Epitaxy effects on excitons in CuI thin films
The third international conference on excitonic processes in condensed matter: EXCON ’98 1998(Nov. 04)
Presenter:D. Kim; I. Tanaka; O. Kojima; H. Ichida; M. Nakayama; H. Nishimura


GaAs/AlAsタイプ-II超格子における高密度励起状態の発光特性(II)
日本物理学会 1998年秋季大会 27a-YM-6 1998(Sep. 27)
Presenter:中山 正昭; 熊本 泰宏; 市田 秀樹; 西村 仁


真空蒸着CuCl薄膜における束縛励起子分子発光
日本物理学会 1998年秋季大会 27a-YM-7 1998(Sep. 27)
Presenter:市田 秀樹; 金 大貴; 中山 正昭; 西村 仁


真空蒸着CuCl-CuBr混晶薄膜における高密度励起状態の発光特性
日本物理学会 第53回年次大会 2p-YM-1 1998(Apr. 02)
Presenter:市田 秀樹; 金 大貴; 中山 正昭; 西村 仁


真空蒸着CuI薄膜の結晶構造と光学特性
日本物理学会 第53回年次大会 31a-YG-8 1998(Mar. 31)
Presenter:小島 摩; 田中 勇; 市田 秀樹; 金 大貴; 中山 正昭; 西村 仁


真空蒸着CuCl薄膜の高励起密度状態における発光特性
日本物理学会 1997年秋季大会 8a-J-10 1997(Sep. 08)
Presenter:市田 秀樹; 金 大貴; 中山 正昭; 西村 仁


CuBr薄膜における強励起状態の発光特性
日本物理学会 第52回年次大会 30p-YB-13 1997(Mar. 30)
Presenter:中山 正昭; 市田 秀樹; 濱崎 賢太; 西村 仁


MISC
音響技術による見守りシステム
日本文理大学紀要 = Bulletin of Nippon Bunri University,49(1):87-96 2021(Mar.)
Author:福島 学; 大里 一矢; 山下 涼介; 樋口 幸; 市田 秀樹; 石井 秀樹; 森竹 隆広


デザインを社会に活かす仕組みづくりとその課題 ~生きがいのあるくらしを創る オープンイノベーション・ワークショップを事例として~
大分県立芸術文化短期大学研究紀要 = Bulletin of Oita prefectural College of Arts and Culture,(57):159-172 2020(Mar. 13)
Author:松本 康史; 市田 秀樹; 森 淳一; 影山 隆之; 濱中 良志; 伊東 朋子
Abstract:超高齢・人口減少社会を背景に、介護・福祉現場に焦点を合わせ、デザインや科学技術を地域社会に活かす方法の確立に向けたワークショッフ群の試行と検討を行った。介護・福祉の現場において必要とされる「モノ」について、多様な専門家や研究者、医療関係者、学生、企業、一般市民など様々なセクターの参加者が集まり、それぞれの専門的な立場からの対話を通したモノづくりワークショップを実施し、その成果を外部に向けた発表や、インターネットなどのメディアを通した公開を介して社会に還元していき、地域社会への波及効果をねらった。本稿では、それらのワークショップ群の手法とその結果について報告する。Against the backdrop of an aging society and declining population, we focused on nursing care and welfare on the ground, and conducted and examined trial workshops to establish ways for utilizing design and science and technology in the local community. We implemented workshops on manufacturing where participants from various sectors including a variety of experts, researchers, medical professionals, students, companies and the general public gathered and held a dialogue about "things" that are important in nursing care and welfare sites from their respective professional points of view. The aim was to create a ripple effect on the local community by giving back the results to society through external presentations and disclosure to the public through media including the Internet. In this paper, we report the methods and results of these workshops.


見守りシステムにおける加速度計測情報に関する一検討
日本文理大学紀要 = Bulletin of Nippon Bunri University,46(2):103-112 2018(Oct.)
Author:福島 学; 市田 秀樹; 大里 一矢; 大塚 柊; 高橋 瑞希


要介護者のコミュニケーション支援システムの開発(その1)共通プラットフォームによる効率良いICT技術の利活用
日本文理大学紀要,45/46:11-16 2017(Nov.)
Author:福島 学; 坪倉 篤志; 濱田 大助; 市田 秀樹


"ものづくり"を通した持続可能で豊かな地域実現への取組み (創立50周年記念号)
日本文理大学紀要 = Bulletin of Nippon Bunri University,45(2):181-190 2017(Nov.)
Author:福島 学; 松永 多苗子; 川崎 敏之; 稲川 直裕; 筑紫 彰太; 室園 昌彦; 岡崎 覚万; 藤田 浩輝; 市田 秀樹; 長瀬 翔斗; 高橋 瑞希; 多賀 絵理; 大里 一矢; 大塚 柊


要介護者のコミュニケーション支援システムの開発(その2)共通プラットフォームによる効率良いICT技術の利活用 (創立50周年記念号 地域創生特集) -- (平成28年度地域志向プロジェクト研究)
日本文理大学紀要 = Bulletin of Nippon Bunri University,45(2):35-40 2017(Nov.)
Author:福島 学; 坪倉 篤志; 濱田 大助; 松永 多苗子; 市田 秀樹


水熱合成法により作製したCuInS2ナノ粒子の発光特性
光物性研究会論文集,28th 2017
Author:上東洋太; 飯田和貴; LEE Y-S.; 渡辺太一; 市田秀樹; KIM D.


LabVIEWを用いた研究成果統合と利活用の試み
日本文理大学紀要 = Bulletin of Nippon Bunri University,44(2):99-108 2016(Oct.)
Author:福島 学; 鵜飼 拓也; 島袋 倫; 米川 修平; 牧 佑樹; 蓑輪 佑樹; 清水 真大; 伊妻 拓哉; 梶原 百香; 田中 大貴; 市田 秀樹


地域企業求人動画制作を通した地域創成人材の育成 : 日本文理大学COC事業による"おおいた,つくりびと"プロジェクト
九州地区大学教育研究協議会議事録,65:171-174 2016(Sep. 02)
Author:市田 秀樹; 鈴木 照男; 小牧 渉; 泉 丙完; 吉村 充功


「適正技術教育」への新たなアプローチに向けて : 「Design for Life―地域が変わるものづくり」プロジェクトを手掛かりに
Communication-Design 特別号,1:86-93 2016(Mar.)
Author:辻田 俊哉; 市田 秀樹; 津田 和俊; 敦賀 和外; 中内 政貴; 松行 輝昌


水熱合成法によるZnS‐CuInS2混晶ナノ粒子の作製
光物性研究会論文集,27th:83‐86 2016
Author:中谷泰輔; 市田秀樹; 飯田和貴; BU H; KIM D


10aPS-33 コロイド法により作製したCdTeナノ粒子の光学特性の温度依存性(10aPS 領域5ポスターセッション(放射光,光電子分光,発光,非線形光学,フォトニック結晶),領域5(光物性))
日本物理学会講演概要集,69(2):543-543 2014(Aug. 22)
Author:渡辺 太一; 市田 秀樹; 高橋 幸司; 志村 邦夫; 中山 正昭; 金 大貴


27aCD-14 ZnO薄膜における励起子-励起子散乱発光ダイナミクスの膜厚依存性(27aCD 励起子・ポラリトン,領域5(光物性))
日本物理学会講演概要集,69(1):727-727 2014(Mar. 05)
Author:若生 周治; 市田 秀樹; 馬場 基彰; 川瀬 稔貴; 川上 将輝; 溝口 幸司; 金 大貴; 中山 正昭; 兼松 泰男


28pEJ-13 ZnO薄膜における励起子-励起子散乱発光の時間分解発光特性(28pEJ 超高速現象,領域5(光物性))
日本物理学会講演概要集,68(1):827-827 2013(Mar. 26)
Author:若生 周治; 市田 秀樹; 川瀬 稔貴; 川上 将輝; 溝口 幸司; 金 大貴; 中山 正昭; 兼松 泰男


18pHB-8 CuBrマイクロキャビティにおけるポラリトンレーザー発振(18pHB 励起子・ポラリトン,領域5(光物性))
日本物理学会講演概要集,67(2):674-674 2012(Aug. 24)
Author:川瀬 稔貴; 金谷 侑佳; 市田 秀樹; 若生 周治; 金 大貴; 兼松 泰男; 中山 正昭


18aPSB-28 有機・無機複合半導体(C_4H_9NH_3)_2PbBr_4における励起子・励起子分子発光の緩和過程(18aPSB 領域5 ポスターセッション(励起子・光誘起相転移・低次元ほか),領域5(光物性))
日本物理学会講演概要集,67(2):665-665 2012(Aug. 24)
Author:山本 康男; 大畠 悟郎; 溝口 幸司; 市田 秀樹; 兼松 泰男


有機・無機複合半導体(C4H9NH3)2PbBr4における強励起発光スペクトルの観測と解析
光物性研究会論文集,23rd:97-100 2012
Author:山本康男; 大畠悟郎; 溝口幸司; 市田秀樹; 兼松泰男


励起子共鳴及びバンド間励起における半導体PbI2の高密度励起発光ダイナミクス
光物性研究会論文集,21st:238-241 2010
Author:安藤光健; 片山郁文; 市田秀樹; 兼松泰男; 武田淳


KI:Ag-の発光ダイナミクス
光物性研究会論文集,20th:29-32 2009
Author:平山景太; 河相武利; 市田秀樹; 兼松泰男; 溝口幸司


CuI薄膜における励起子―励起子散乱発光ダイナミクスの励起エネルギー依存性
光物性研究会論文集,18th:275-278 2007
Author:市田秀樹; 溝口幸司; KIM D; 兼松泰男; 中山正昭


光カーゲート法を用いたZnO薄膜の時間分解発光スペクトル:励起エネルギー依存性
光物性研究会論文集,17th:365-368 2006
Author:市田秀樹; 若生周治; 溝口幸司; KIM D; 兼松泰男; 中山正昭


光カーゲート法を用いたZnO薄膜の時間分解発光スペクトル:励起強度依存性
光物性研究会論文集,17th:229-232 2006
Author:若生周治; 市田秀樹; 溝口幸司; KIM D; 兼松泰男; 中山正昭


CuI薄膜における励起子―励起子散乱発光ダイナミクスの温度依存性
光物性研究会論文集,16th:95-98 2005(Dec.)
Author:市田秀樹; 溝口幸司; KIM D; 兼松泰男; 中山正昭


CuI薄膜における励起子‐励起子散乱発光のダイナミクス
光物性研究会論文集,15th:89-92 2004(Dec.)
Author:市田秀樹; 下村剛哉; 溝口幸司; 兼松泰男; 中山正昭


ポンプ・プローブ過渡吸収スペクトルのシングルショットイメージング計測
バイオイメージング,13(3):107-108 2004(Oct. 15)
Author:小西 毅; 伊東 一良; 市田 秀樹; 兼松 泰男; 雙木 満; 武山 哲英; 永岡 利之


光カーシャッターを用いたフェムト秒時間分解蛍光法と蛋白質研究への展開
レーザー学会研究会報告 = Reports on the Topical meeting of the Laser Society of Japan,318:35-39 2003(Dec. 15)
Author:中村 亮介; 市田 秀樹; 濱田 格雄; 兼松 泰男; 徳永 史生


光受容蛋白質PYPの光学特性
光物性研究会論文集,14th:107-110 2003(Dec. 05)
Author:市田秀樹; 浜田格雄; 中村亮介; 曽田幸司; 吉富寛; 山田寛士; 兼松泰男; 徳永史生


24pWE-8 GaAs/AlAsタイプ-II超格子における励起子-励起子分子のボース統計性の制御(24pWE 領域4,領域5合同 量子井戸・細線・ドット・励起子,領域4(半導体,メゾスコピック系・局在分野))
日本物理学会講演概要集,57(1):624-624 2002(Mar. 01)
Author:市田 秀樹; 中山 正昭


2段階励起法によるGaAs/AlAsタイプ‐II超格子における励起子‐励起子分子系のボース統計性の制御
光物性研究会論文集,12th:62-65 2001(Dec. 07)
Author:市田秀樹; 中山正昭


GaAs/AlAsタイプ-II超格子における励起子-励起子分子系の異常分布
光物性研究会論文集,11th:161-164 2000(Dec.)
Author:市田秀樹; 中山正昭


GaAs/AlAsタイプ‐II超格子におけるタイプ‐I電子・正孔プラズマ発光
光物性研究会論文集,10th:245-248 1999(Nov. 26)
Author:市田秀樹; 中山正昭; 西村仁


Thermal-strain-induced splitting of heavy- and light-hole exciton energies in Cul thin films grown by vacuum evaporation.(共著)
Phys. Rev. B,60(19):13879-13884 1999
Author:KIM D; NAKAYAMA M; KOJIMA O; TANAKA I; ICHIDA H; NAKANISHI T; NISHIMURA H


Observation of Bound Biexciton Photoluminescence in CuCl Thin Films
光物性研究会論文集,:13-16 1998(Nov.)
Author:市田秀樹; 金大貴; 中山正昭; 西村仁


GaAs/AlAsタイプ-II超格子の高密度励起状態における電子・正孔液滴形成
光物性研究会論文集,:169-172 1998(Nov.)
Author:市田 秀樹; 中山 正昭; 西村 仁


真空蒸着CuCl-CuBr混晶薄膜における高密度励起状態の発光特性(第43回物性若手夏の学校(1998年度),講義ノート)
物性研究,71(3):519 1998
Author:市田 秀樹; 金 大貴; 中山 正昭; 西村 仁


真空蒸着CuCl薄膜の高密度励起状態における発光特性
光物性研究会論文集,:9-12 1997(Nov.)
Author:市田秀樹; 金大貴; 中山正昭; 西村仁


CuBr薄膜における強励起状態の発光特性(第42回 物性若手夏の学校(1997年度))
物性研究,69(3):563 1997
Author:市田 秀樹; 中山 正昭; 濱崎 賢太; 西村 仁