論文 対話型・参加型教育を促す研究公正教材の国際動向 : 「Path2Integrity」「Dilemma Game」を題材に RI : Research Integrity Reports,5:20-40 2021(Sep. 15) Author:市田 秀樹; 中村 征樹
共同研究で何に留意すべきか : 国内の研究不正事案からの検討 RI : Research Integrity Reports,5:41-57 2021(Sep. 15) Author:中村 文彦; 市田 秀樹; 中村 征樹
二重投稿をめぐる動向 : 国際学会プロシーディング論文の扱いを中心に RI : Research Integrity Reports,(4):31-48 2020(Mar. 31) Author:市田 秀樹; 中村 征樹
Synthesis of Water-Soluble CuInS2 Quantum Dots by a Hydrothermal Method and Their Optical Properties Bulletin of the Chemical Society of Japan,92(5):930-936 2019(Feb. 13) Author:Kazutaka Iida; Yota Uehigashi; Hideki Ichida; Hang-Beom Bu; DaeGwi Kim
Hierarchical construction of SHG-active polar crystals by using multi-component crystals CHEMICAL COMMUNICATIONS,52(94):13710-13713 2016 Author:Tetsuya Miyano; Tatsuya Sakai; Ichiro Hisaki; Hideki Ichida; Yasuo Kanematsu; Norimitsu Tohnai Abstract:Organic salts composed of chiral amines and sulfonic acid with high hyperpolarizability allowed the construction of polar crystals with incorporated guest molecules. The polarity of the crystals was precisely regulated by employing suitable guest molecules. As a result, the crystals generated a strong second harmonic generation property.
Theory of the lifetime of an exciton incoherently created below its resonance frequency by inelastic scattering PHYSICAL REVIEW B,91(23):235205/01-13 2015(Jun.) Author:Motoaki Bamba; Shuji Wakaiki; Hideki Ichida; Kohji Mizoguchi; DaeGwi Kim; Masaaki Nakayama; Yasuo Kanematsu Abstract:When an exciton in semiconductor is scattered and its energy is decreased far below the resonance energy of the bare exciton state, it has been considered that an exciton-polariton is created immediately by the scattering process because there is no exciton level at that energy. However, according to the recent time-resolved measurements of P emission originating from inelastic exciton-exciton scattering, it looks rather natural to consider that the exciton-polariton is created in a finite time scale which is restricted by a coherence volume of the exciton after the scattering. In this interpretation, the exciton remains in this time scale far below its resonance energy as a transient state in a series of processes. We propose an expression of the P-emission lifetime depending on the coherence volume of the scattered excitons through the conversion process from them to the polaritons. The coherence volume of the scattered excitons appears in the calculation of the inelastic scattering process on the assumption of a finite coherence volume of the bottleneck excitons. Time-resolved optical-gain measurements could be a way for investigating the validity of our interpretation.
Emission-energy dependence of ultrafast P-emission decay in ZnO from bulk to nanofilm JOURNAL OF LUMINESCENCE,152:250-253 2014(Aug.) Author:Shuji Wakaiki; Hideki Ichida; Motoaki Bamba; Toshiki Kawase; Masaki Kawakami; Kohji Mizoguchi; DaeGwi Kim; Masaaki Nakayama; Yasuo Kanematsu Abstract:We have performed time-resolved photoluminescence (PL) spectroscopy for ZnO thin films with thicknesses of 90, 460, and 2800 nm under intense excitation condition. We clearly observed the P emission due to inelastic exciton-exciton scattering. It was found that, in the 460- and 2800-nm thick samples, the decay time of the P emission considerably depends on the detection energy inversely proportional to the group velocity of the polariton in a bulk crystal with each factor of proportionality. In contrast, the energy dependence is less remarkable in the 90-nm thick sample. The decay times are basically shortened with a decrease in the film thickness. The thickness dependence of the P-emission-decay profiles is explained by considering the crossover from the polariton modes in the 2800-nm thick sample (bulk-like film) to the exciton-/photon-like modes in the 90-nm thick sample (nanofilm). (C) 2013 Elsevier B.V. All rights reserved.
Thickness dependence of photoluminescence-decay profiles of exciton-exciton scattering in ZnO thin films EUROPEAN PHYSICAL JOURNAL B,86(9):387/01-04 2013(Sep.) Author:Shuji Wakaiki; Hideki Ichida; Toshiki Kawase; Kohji Mizoguchi; DaeGwi Kim; Masaaki Nakayama; Yasuo Kanematsu Abstract:We have investigated the photoluminescence (PL) dynamics of ZnO thin films under intense excitation conditions using an optical-Kerr-gating method. The PL bands originating from exciton-exciton scattering (P emission) and biexciton (M emission) have been observed at 10 K. The ultrashort gating time of 0.6 ps has enabled us to obtain precise information of the temporal profiles of the peak energies and the intensities of the P- and M-PL bands. We have found that the decay time of the P emission becomes longer with increasing film thickness, while that of the M emission is independent of the film thickness. Although the decay time of the P emission is an increasing function of the film thickness, the relation is not in proportion, which is contrary to the predicted proportionality based on a simple model of photon-like polariton propagation.
Slow propagation of photon-like polaritons generated by exciton-exciton scattering in ZnO thin films XVIIITH INTERNATIONAL CONFERENCE ON ULTRAFAST PHENOMENA,41:04014/01-03 2013 Author:H. Ichida; S. Wakaiki; T. Kawase; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu Abstract:We report on the first observation of the thickness-dependent photoluminescence-decay time of exciton-exciton scattering in ZnO thin films, which indicates the slower propagation of photon-like polaritons compared to that in bulk by two orders magnitude.
Photoluminescence dynamics due to biexcitons and exciton-exciton scattering in the layered-type semiconductor PbI2 PHYSICAL REVIEW B,86(15):155206/01-06 2012(Oct.) Author:M. Ando; M. Yazaki; I. Katayama; H. Ichida; S. Wakaiki; Y. Kanematsu; J. Takeda Abstract:The dynamics of photoluminescence due to biexcitons and exciton-exciton scattering (M and P emissions, respectively) has been investigated in the layered-type semiconductor PbI2 by using the optical Kerr gate method. We simultaneously observed P and M emissions under high-density excitation. The M emission emerges instantaneously, whereas the P emission shows a delayed onset whose latency increases as the excitation photon energy increases. The latency to onset indicates that the P emission takes place after the relaxation of excitons with excess energy toward the bottleneck region via exciton-longitudinal optical (LO) phonon scattering processes. Based on the time-dependent peak energy shift of the P emission and a line-shape analysis of the M emission, we evaluated the effective temperatures of both photogenerated excitonic and biexcitonic systems as well as the self-energy due to the collisions among biexcitons. We conclude that these systems are separately formed in space owing to potential fluctuations between PbI2 layers, and independently reach thermal equilibrium after similar to 30 ps with different cooling processes. The exciton-exciton and exciton-LO phonon scattering processes play an important role in cooling the excitonic system, whereas the biexciton-biexciton and biexciton-exciton collisions are dominant in cooling the biexcitonic system.
Photoluminescence dynamics originating from exciton-exciton and exciton-electron scattering in a GaN thin film PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12,9(12):2497-2500 2012 Author:Shuji Wakaiki; Hitoshi Tokumaru; Hideki Ichida; Kohji Mizoguchi; DaeGwi Kim; Yasuo Kanematsu; Masaaki Nakayama Abstract:We have investigated the photoluminescence (PL) dynamics of a GaN thin film under intense excitation conditions using an optical-Kerr-gating method. It has been found that the PL originating from the exciton-exciton scattering (P emission) appears at the temperatures lower than around 100 K, while at higher temperatures P emission vanishes and the PL originating from exciton-electron scattering (H emission) dominates. The ultrashort gating time of 0.6 ps enabled us to obtain precise information of the temporal profiles of the peak energy, the bandwidth, and the intensity of the P emission and H emission. We have found that the decay time of the H emission is shorter than that of the P emission. By taking into account the strong correlation between the decay time and the peak-energy position of the emissions, we conclude that the difference in the decay times is attributed to a change of the photon-like characteristics of the lower polariton branch that is the final state of the scattering process; namely, the photon-like component of the H emission is larger than that of the P emission. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Photoluminescence of excitons and biexcitons in (C4H9NH3)(2)PbBr4 crystals under high excitation density PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12,9(12):2501-2504 2012 Author:Yasuo Yamamoto; Goro Oohata; Kohji Mizoguchi; Hideki Ichida; Yasuo Kanematsu Abstract:Optical properties in (C4H9NH3)(2)PbBr4 single crystals under high density excitation have been investigated by photoluminescence (PL) spectroscopy. The PL bands associated with the Gamma(1), Gamma(2) and Gamma(5) excitons and the biexcitons have been observed. While the Gamma(2) exciton and biexciton PL intensities are proportional to the 0.9 and 1.7 power of the excitation density, respectively, the Gamma(5) exciton PL intensity shows the nonlinear dependence on the excitation density. The excitation-density dependence of the PL bands is calculated by taking account of the dynamical change of the exciton and biexciton populations in an exciton-biexciton system consisting of two exciton states and a biexciton state. The calculated results well explain the nonlinear dependence of the Gamma(5) exciton PL intensity on the excitation density. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Selective Photoinduced Energy Transfer from a Thiophene Rotaxane to Acceptor ORGANIC LETTERS,13(4):672-675 2011(Feb.) Author:Kazuya Sakamoto; Yoshinori Takashima; Norio Hamada; Hideki Ichida; Hiroyasu Yamaguchi; Hitoshi Yamamoto; Akira Harada Abstract:An energy transfer process was investigated using cyclodextrin-oligothiophene rotaxanes (2T-[2]rotaxane). The excited energy of 2T-[2]rotaxane is transferred to the sexithiophene derivative which is included in the cavity of beta-CD stoppers of 2T-[2]rotaxane.
Photoluminescence decay profiles of exciton-exciton scattering in a ZnO thin film PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 1,8(1):116-119 2011 Author:Shuji Wakaiki; Hideki Ichida; Kohji Mizoguchi; DaeGwi Kim; Yasuo Kanematsu; Masaaki Nakayama Abstract:We have investigated the photoluminescence (PL) dynamics of a ZnO thin film under intense excitation conditions at 10 K. In the ZnO thin film, a PL band due to exciton-exciton scattering, the so-called P emission, appears. The optical-Kerr-gating method with the ultrashort gating time of 0.6 ps enabled us to obtain precise information of the temporal profiles including the peak energy, the bandwidth and the intensity of the P emission, at various detection energies. We have found that the decay time of the P emission gradually shortens with decreasing detection energy. The change in the decay time can be reasonably attributed to the photon-like characteristics of the lower polariton branch that is the final state of the exciton-exciton scattering. Furthermore, we have shown that the decay time of the P emission is phenomenologically determined by the group velocity of the final state although the origin of the long decay time remains to be elucidated. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Single-Shot Time-Frequency Imaging of Phonon-Polariton Dispersion in Ferroelectric LiNbO3 2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO),:CFO5: pp.1-2 2011 Author:Ikufumi Katayama; Hiroyuki Sakaibara; Hideki Ichida; Yasuo Kanematsu; Jun Takeda Abstract:Single-shot observation of phonon-polariton dispersion in LiNbO3 is demonstrated using optical Kerr-gate method with an echelon mirror. Forward-and backward-propagating phonon-polaritons are observed in the time-frequency two-dimensional image. (C)2009 Optical Society of America
Nonradiative Transition Processes between the Relaxed Excited States of Ag- Centers Doped in KI Crystals JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,79(12):124708/01-06 2010(Dec.) Author:Taketoshi Kawai; Keita Hirayama; Hideki Ichida; Yasuo Kanematsu; Kohji Mizoguchi Abstract:Decay kinetics and intensities of the luminescence bands for Ag- centers doped in KI single crystals have been investigated over a wide temperature range between 5 and 310 K. The Ag- centers doped in KI exhibit a broad and largely Stokes-shifted C* luminescence band at about 1.60 eV in addition to the A' and C' luminescence bands, whose peaks are 2.65 and 3.67 eV, respectively. The luminescence intensities of these bands change with temperature while complementing each other. Decay times of the luminescence decrease in the temperature range where the luminescence diminishes with increasing temperature. The temperature evolutions of the decay times and the intensities of the luminescence are analyzed on the basis of a configuration coordinate model including the thermally activated nonradiative transitions among the relaxed excited states. From the analysis results, the parameters characterizing the respective nonradiative transitions are determined.
Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature OPTICAL MATERIALS,31(9):1323-1326 2009(Jul.) Author:Yoshikazu Terai; Takehiro Tokuno; Hideki Ichida; Yasuo Kanematsu; Yasufumi Fujiwara Abstract:Low-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light-emitting diode (LED) grown by organometallic vapor phase epitaxy. Under forward bias at 77 K, the EL spectra from a cleaved edge of the LED were dominated by the luminescence due to an Er-20 center, indicating that injected carriers contribute effectively to the excitation of the Er-20 center. Excitation cross-sections of Er ions by current injection were obtained by the current density dependence of the EL intensity and its time response. The excitation cross-sections depended on temperature and the active layer thickness of the LED. (C) 2008 Published by Elsevier B.V.
Decay kinetics of the luminescence of Ag- centers doped in alkali halide crystals PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,246(6):1327-1333 2009(Jun.) Author:Taketoshi Kawai; Ichiro Akai; Hideki Ichida; Yasuo Kanematsu; Kohji Mizoguchi; Tsutomu Karasawa Abstract:Decay kinetics of the luminescence of Ag centers doped in NaCl, KBr, and CsBr single crystals have been investigated in the temperature range from 4 K to 260 K. At low temperature, the radiative transitions from the T-1(lu) states in the Ag centers exhibit the luminescence with the decay time constants of about 1.3 ns. With increasing temperature, the decay time constants decrease, fleeting a thermally activated non-radiative transition process from the 1T(lu) to T-3(lu) states. On the other hand the luminescence due to the radiative transitions from the 3T(lu) states have the decay time constants of about 1.0 ms at low temperature and about 10 mu s above 80 K from the analysis of the temperature dependence of the decay time constants, the parameters of a three-level model and a thermally activated non-radiative process from the T-1(lu) to T-3(lu) states are obtained. The parameters are discussed as compared with those of other Tl+-type centers doped in alkali halide crystals. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Ultrafast Dynamics of Electron-Hole Plasma Coupled to Optical Phonons in a ZnO Thin Film ULTRAFAST PHENOMENA XVI,92:226-+ 2009 Author:Hideki Ichida; Shuji Wakaiki; Kohji Mizoguchi; DaeGwi Kim; Yasuo Kanematsu; Masaaki Nakayama Abstract:We have investigated ultrafast photoluminescence dynamics of electron-hole plasma coupled to longitudinal optical phonons in a ZnO thin film. The dynamical change of the electron-hole-pair density is characterized by time-resolved photoluminescence spectra measured with an optical-Kerr-gating method.
Transient vibronic structure in ultrafast fluorescence spectra of photoactive yellow protein PHOTOCHEMISTRY AND PHOTOBIOLOGY,84(4):937-940 2008(Jul.) Author:Ryosuke Nakamura; Norio Hamada; Hideki Ichida; Fumio Tokunaga; Yasuo Kanematsu Abstract:The ultrafast photo-induced dynamics of wild-type photoactive yellow protein and its site-directed mutant of E46Q in aqueous solution was studied at room temperature by femtosecond fluorescence spectroscopy using the optical Kerr-gate method. The vibronic structure appears, depending on the excitation photon energy, in the time-resolved fluorescence spectra just after photoexcitation, which winds with time and disappears on a time scale of sub-picoseconds. This result indicates that the wavepacket is localized in the electronic excited state followed by dumped oscillations and broadening, and also that the initial condition of the wavepacket prepared depending on the excitation photon energy affects much the following ultrafast dynamics in the electronic excited state.
Fast photoluminescence dynamics in ZnO thin films under high-density excitation conditions JOURNAL OF LUMINESCENCE,128(5-6):1059-1061 2008(May) Author:H. Ichida; S. Wakaiki; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama Abstract:We have investigated the photoluminescence (PL) dynamics of crystalline ZnO thin films prepared by an rf-magnetron sputtering method under high-density excitation conditions at 10 K using an optical-Kerr gating (OKG.) method. In the time-resolved PL spectra, we clearly observed the change of the PL properties with increasing time delay. In the initial time region up to about 5 ps, a broad PL band appears at the low-energy side of the free exciton band, which is considered to be due to the electron-hole plasma (EHP) accompanied with a band-gap renormalization. After the broad PL band vanishes, a narrow PL band originating from exciton-exciton scattering, the so-called P emission, appears; namely, its peak energy reaches the energy lower than the free exciton energy by the exciton binding energy. Thus, the time-resolved PL spectra clearly demonstrate the dynamical change from the EHP emission to the P emission at the cross-point time of about 5 ps, which corresponds to the dynamical phase transition from the EHP state to the exciton state. (C) 2008 Elsevier B.V. All rights reserved.
Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5 mu m light-emitting devices with extremely stable wavelength PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,205(1):64-67 2008(Jan.) Author:Yasufumi Fujiwara; Shouichi Takemoto; Takehiro Tokuno; Keiji Hidaka; Hideki Ichida; Masato Suzuki; Yoshikazu Terai; Yasuo Kanematsu; Masayoshi Tonouchi Abstract:Energy-transfer processes in Er,O-codoped GaAs (GaAs: Er,O) have been investigated by means of a pump and probe reflection technique. Time-resolved reflectivity exhibited a characteristic dip; a negative signal due to bandgap re-normalization in less than 1 ps and then a gradual recovery. In the recovery process, there were two components, fast and slow. The fast recovery time (several ps) was inversely proportional to Er concentration. The analysis based on a rate equation indicated that it is due to the capture of electrons by charged traps. The slow recovery (30-60 ps) was well coincident with the time (54 ps) predicted theoretically in the framework of a multiphonon-assisted model. Optical excitation cross section of Er ions in GaAs:Er,O has also been studied in various samples and shown to depend strongly on Er concentration. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Nonradiative processes at low temperature in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9,5(9):2864-+ 2008 Author:A. Fujita; T. Tokuno; K. Hidaka; K. Fujii; K. Tachibana; H. Ichida; Y. Terai; Y. Kanematsu; Y. Fujiwara Abstract:Er-related photoluminescence (PL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) grown by organometallic vapor phase epitaxy. The GaAs:Er,O which was slightly doped with Er exhibited both strong Er-related and band-edge luminescence. In the temperature dependence of the Er-related PL intensity, the intensity decreased with increasing temperature from 4.2 K to 30 K. The temperature region was quite coincident with the region where the Carbon-related PL intensity decreased. This behaviour implies the existence of a Carbon-related nonradiative process in GaAs. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Coherent oscillations in ultrafast fluorescence of photoactive yellow protein JOURNAL OF CHEMICAL PHYSICS,127(21):215102/01-07 2007(Dec.) Author:Ryosuke Nakamura; Norio Hamada; Hideki Ichida; Fumio Tokunaga; Yasuo Kanematsu Abstract:The ultrafast photoinduced dynamics of photoactive yellow protein in aqueous solution were studied at room temperature by femtosecond fluorescence spectroscopy using an optical Kerr-gate technique. Coherent oscillations of the wave packet were directly observed in the two-dimensional time-energy map of ultrafast fluorescence with 180 fs time resolution and 5 nm spectral resolution. The two-dimensional map revealed that four or more oscillatory components exist within the broad bandwidth of the fluorescence spectrum, each of which is restricted in the respective narrow spectral region. Typical frequencies of the oscillatory modes are 50 and 120 cm(-1). In the landscape on the map, the oscillatory components were recognized as the ridges which were winding and descending with time. The amplitude of the oscillatory and winding behaviors is a few hundred cm(-1), which is the same order as the frequencies of the oscillations. The mean spectral positions of the oscillatory components in the two-dimensional map are well explained by considering the vibrational energies of intramolecular modes in the electronic ground state of the chromophore. The entire view of the wave packet oscillations and broadening in the electronic excited state, accompanied by fluorescence transitions to the vibrational sublevels belonging to the electronic ground state, was obtained. (c) 2007 American Institute of Physics.
Energy-relaxation dynamics of photogenerated excitons observed from time-resolved photoluminescence of exciton-exciton scattering in CuI thin films PHYSICAL REVIEW B,76(8):085417/01-05 2007(Aug.) Author:H. Ichida; Y. Kanematsu; K. Mizoguchi; D. Kim; M. Nakayama Abstract:We have investigated the excitation-photon-energy dependence of time-resolved photoluminescence spectra of the P emission due to exciton-exciton scattering at 10 K in CuI thin films from the viewpoint of energy-relaxation dynamics of photogenerated excitons. The ultrashort time resolution of 0.4 ps using an optical-Kerr-gating method enabled us to obtain precise information of the relaxation dynamics under various excitation-photon-energy conditions. It is found that the onset time of the P emission, which corresponds to the time required for the appearance of the P emission after the irradiation of an excitation pulse, increases with increasing excitation-photon energy, while the rise and decay times of the P emission are independent on the excitation-photon energy. These results indicate that the onset time is connected with an energy-relaxation time of the photogenerated excitons toward the bottleneck region of the exciton-polariton. On the basis of a Frohlich-interaction model, we have quantitatively analyzed the energy-relaxation time, taking account of interactions between the excitons and longitudinal optical (LO) phonons, the so-called cascade process of LO-phonon scattering, in momentum space.
Ultrafast dynamics of photoactive yellow protein via the photoexcitation and emission processes PHOTOCHEMISTRY AND PHOTOBIOLOGY,83(2):397-402 2007(Mar.) Author:Ryosuke Nakamura; Norio Hamada; Hideki Ichida; Fumio Tokunaga; Yasuo Kanematsu Abstract:Pump-dump fluorescence spectroscopy was performed for photoactive yellow protein (PYP) at room temperature. The effect of the dump pulse on the population of the potential energy surface of the electronic excited state was examined as depletion in the stationary fluorescence intensity. The dynamic behavior of the population in the electronic excited state was successfully probed in the various combinations of the pump-dump delay, the dump-pulse wavelength, the dump-pulse energy and the observation wavelength. The experimental results were compared with the results obtained by the femtosecond time-resolved fluorescence spectroscopy.
Dynamical process of exciton-exciton scattering in CuI thin films JOURNAL OF LUMINESCENCE,122:396-398 2007(Jan.) Author:Hideki Ichida; Takeya Shimomura; Kohji Mizoguchi; DaeGwi Kim; Yasuo Kanematsu; Masaaki Nakayama Abstract:We have investigated the time-resolved photoluminescence (PL) spectra of CuI thin films under intense excitation conditions in the time region up to 25 ps. In the time-integrated PL spectra, we have clearly observed the PL band originated from the inelastic scattering of excitons, so-called P emission. The time-resolved PL spectra obtained by using an optical Kerr gating method exhibit that the peak energy of the P-emission band temporally changes in a picosecond region, which reflects the variation of the effective temperature of excitonic system. In the time profile of the P-emission band, we found the following two characteristic properties. One is that the decay time hardly depends on the excitation power. The other is that the rise time becomes considerably faster with increasing excitation power. Moreover, we have found that the inverse of the rise time of the P emission exhibits an almost quadratic dependence on the excitation power. (c) 2006 Elsevier B.V. All rights reserved.
Double-gated spectral snapshots for biomolecular fluorescence JOURNAL OF LUMINESCENCE,122:297-300 2007(Jan.) Author:Ryosuke Nakamura; Norio Hamada; Hideki Ichida; Fumio Tokunaga; Yasuo Kanematsu Abstract:A versatile method to take femtosecond spectral snapshots of fluorescence has been developed based on a double gating technique in the combination of an optical Kerr gate and an image intensifier as an electrically driven gate set in front of a charge-coupled device detector. The application of a conventional optical-Kerr-gate method is limited to molecules with the short fluorescence lifetime up to a few hundred picoseconds, because long-lifetime fluorescence itself behaves as a source of the background signal due to insufficiency of the extinction ratio of polarizers employed for the Kerr gate. By using the image intensifier with the gate time of 200ps, we have successfully suppressed the background signal and overcome the application limit of optical-Kerr-gate method. The system performance has been demonstrated by measuring time-resolved fluorescence spectra for laser dye solution and the riboflavin solution as a typical sample of biomolecule. (c) 2006 Elsevier B.V. All rights reserved.
Visible and near-infrared luminescence from self-assembled lanthanide(III) clusters with organic photo sensitizers JOURNAL OF LUMINESCENCE,122:262-264 2007(Jan.) Author:Kazuhiro Manseki; Yasuchika Hasegawa; Yuji Wada; Hideki Ichida; Yasuo Kanematsu; Takashi Kushida Abstract:Synthesis and photophysical properties of nonanuclear lanthanide(III) clusters, H-10[Ln(9)(hesa)(16)(mu-O)(10)(NO3)] (hesa = hexylsalicylate, Ln = Gd, Tb and Yb) were investigated. By the ligand excitation at 380 nm in methanol, the Tb cluster exhibited luminescence due to the 4f-4f transitions of Tb(III) around 487, 549, 580, 621, 646, 670, and 680 nm (D-5(4) -> 7F(i): i = 6, 5, 4, 3, 2, 1, 0). The Yb cluster also showed the photosensitized luminescence at around 980 nm (F-2(7/2) -> F-5/2). Especially, the Tb cluster gave a high emission quantum yield (Phi(s) > 0.90) in methanol. (c) 2006 Elsevier B.V. All rights reserved.
Temperature dependence of dynamical processes of photoluminescence from exciton-exciton scattering in CuI thin films JOURNAL OF LUMINESCENCE,119:457-461 2006(Jul.) Author:H Ichida; KO Mizoguchi; D Kim; Y Kanematsu; M Nakayama Abstract:We have investigated the time-resolved photoluminescence spectra of the P emission due to exciton-exciton scattering in CuI thin films at various temperatures by using an optical-Kerr-gating method with a time resolution of 0.4 ps. It is found that the rise time of the P emission hardly changes with temperature. Since the rise time reflects collision processes of excitons in the lowest (n = 1) exciton state, the temperature dependence demonstrates that the exciton-collision rate is hardly influenced by temperature. On the other hand, the decay time of the P emission becomes faster from 8 to 5 ps with increasing temperature from 10 to 150K. This is due to the enhancement of the contribution of the photon state away from the polariton-bottleneck region to the photon-like polariton state leading to the P emission owing to thermal broadening in momentum space; namely the photon nature of the photon-like polariton becomes considerable. (c) 2006 Elsevier B.V. All rights reserved.
Inhomogeneity observed in the photocycle of photoactive yellow protein JOURNAL OF LUMINESCENCE,119:122-126 2006(Jul.) Author:N Hamada; K Matsumoto; K Soda; R Nakamura; H Ichida; F Tokunaga; Y Kanematsu Abstract:In order to obtain insight into the hydrogen-bonding network surrounding the chromophore in biologically photofunctional proteins, photoactive yellow protein (PYP) has been modified by a combination of a site-directed mutagenesis and a substitution of the chromophore with an analogue. Fluorescence excitation and emission spectroscopies have been performed to evaluate the inhomogeneous nature of the spectra originated from the variation of conformational substates of the modified proteins. Noticeable inhomogeneity including contributions from two distinct substates has been observed for a PYP hybrid with the E46Q mutation and a substitution of the p-coumaric acid chromophore with caffeic acid. Transient absorption spectroscopy has been also conducted to clarify whether inhomogeneity affects the recovering kinetics or not. For the PYP hybrid, a remarkable difference of the recovery time from the signaling state has been observed, depending on the wavelength of the excitation light triggering the photocycle. Although this observation is preliminary, it indicates that kinetically inhomogeneous species likely exist in the PYP hybrid. (c) 2006 Elsevier B.V. All rights reserved.
Ultrafast photoluminescence dynamics of biexcitons in a CuCl thin film grown by vacuum deposition PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 10,3(10):3464-+ 2006 Author:M. Nakayama; S. Wakaiki; K. Mizoguchi; D. Kim; H. Ichida; Y. Kanematsu Abstract:We have investigated the ultrafast dynamics of the biexciton photoluminescence (PL) in a 500-nm thick CuCl thin film at 10 K using an optical Kerr gating method with a time resolution of similar to 1 ps. The CuCl thin film was grown by vacuum deposition. It is found that the biexciton-PL intensity has an excitation-power dependent rise time, which reflects the formation process of biexcitons, while its decay time is independent of the excitation power: 6.0 ps that is dominated by the transit time of the exciton polaritons travelling through the thin film. Furthermore, from the time-resolved PL spectra of the biexciton, we have observed a peak shift as a function of time, which is connected with the heating and cooling processes of the effective temperature in the excitonic system. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Photoluminescence dynamics of exciton-exciton scattering processes in CuI thin films PHYSICAL REVIEW B,72(4):045210/01-05 2005(Jul.) Author:H Ichida; Y Kanematsu; T Shimomura; K Mizoguchi; D Kim; M Nakayama Abstract:We have investigated the dynamical process of exciton-exciton scattering in CuI thin films grown on a (100) NaCl substrate under intense-excitation conditions. The time-integrated photoluminescence spectra clearly exhibit two photoluminescence bands which originate from the excitonic molecule and the inelastic scattering of excitons, so-called P emission. The time-resolved PL spectra obtained by using an optical Kerr gating method show that the peak energy of the P-emission band temporally changes in a picosecond region, which reflects the thermal distribution of excitons. In the time profile of the P-emission band, the rise time that is around 1 ps becomes remarkably fast with increasing excitation power, while the decay time hardly depends on the excitation power. Moreover, we have found that the inverse of the rise time of the P emission exhibits an almost quadratic dependence for the excitation power. This finding suggests that the inverse of the rise time corresponds to the rate of the exciton-exciton scattering.
Entire view of coherent oscillations in ultrafast fluorescence for photoactive yellow protein ULTRAFAST PHENOMENA XIV,79:607-609 2005 Author:R Nakamura; N Hamada; H Ichida; Y Kanematsu; F Tokunaga Abstract:Remarkable oscillatory components are observed in the 2-dimentional-time-wavelength map of ultrafast fluorescence for photoactive yellow protein, by using the optical Kerr gating system with 180-fs time resolution and 5-nm spectral resolution.
Bose-Einstein statistics behaviors of exciton-biexciton photoluminescence decay processes in a GaAs/AlAs type-II superlattice PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,21(2-4):651-655 2004(Mar.) Author:M Nakayama; H Ichida Abstract:We have investigated the Bose-Einstein (BE) statistics behavior of the exciton-biexciton (EX-BEX) system during the photoluminescence decay processes at 5 K in a (GaAs)(12)/(AlAs)(12) type-II superlattice. Owing to the long lifetime of the type-II exciton, which is of the order of microseconds due to the indirect transition nature, we have precisely evaluated the density relation between the EX and BEX from the line-shape analysis of time-resolved photoluminescence spectra. At an EX density around 1 x 10(10)/cm(2), the BEX density suddenly increases with a threshold-like profile. This behavior is quantitatively explained by the framework of BE statistics of the EX-BEX system. It is demonstrated that the threshold-like increase of the BEX density is recurred by the incidence of a second-excitation pulse with a time delay, which leads to the dynamical control of the BE statistics behavior. (C) 2003 Elsevier B.V. All rights reserved.
Quantum-statistics behavior of the exciton-biexciton system in GaAs/AlAs type-II superlattices PHASE TRANSITIONS,75(7-8):979-987 2002(Oct.) Author:M Nakayama; H Ichida Abstract:We have investigated the quantum-statistics behavior of the exciton-biexciton system from the photoluminescence properties in (GaAs)(m)/(AlAs)(m) type-II superlattices with m = 12 and 13 monolayers, where the lowest-energy type-II exciton consists of the n = 1X electron of AlAs and n = 1Gamma heavy hole of GaAs. The long exciton lifetime of the order of mus due to the indirect transition nature enables us to obtain precisely the density relation between the exciton and biexciton from the line-shape analysis of time-resolved photoluminescence spectra. In a relatively low exciton-density region, the biexciton density obeys a well-known square law. At an exciton density around 1 x 10(10) cm(-2), the biexciton density suddenly increases with a threshold-like nature. This behavior, which is realized at a bath temperature up to 8 K under an excitation power of the order of 100 mW/cm(2), results from the characteristics of Bose-Einstein statistics of the exciton-biexciton system.
Control of Bose-Einstein statistics behavior of the exciton-biexciton system in a GaAs/AlAs type-II superlattice Nonlinear Optics,29(4-6):203-209 2002(Jun.) Author:Hideki Ichida; Masaaki Nakayama
Trtansition from biexcitons to electron-hole plasma in photoluminescence properties of a GaAs/AlAs multiple-quantum-well structure INTERNATIONAL JOURNAL OF MODERN PHYSICS B,15(28-30):3793-3796 2001(Dec.) Author:H Ichida; K Tsuji; K Mizoguchi; H Nishimura; M Nakayama Abstract:We report photoluminescence (PL) properties under various excitation-power conditions in a GaAs (15.0 nm)/AlAs(15.0 nm) multiple-quantum-well structure. We have clearly observed the PL bands from the biexciton and electron-hole plasma, and estimated the biexciton binding energy and the band-gap renormalization in the electron-hole plasma. The spectral change of the PL bands as a function of the excitation power demonstrates the transition from the biexciton to the electron-hole plasma under intense excitation conditions.
Boson characteristics of the exciton-biexciton system in a GaAs/AlAs type-II superlattice JOURNAL OF LUMINESCENCE,94:379-383 2001(Dec.) Author:H Ichida; M Nakayama Abstract:We report on the appearance of Bose-Einstein statistics of the exciton-biexciton system in a (GaAs)(12)/(AlAs)(12) type-II superlattice. The density relation of the exciton and biexciton is estimated from time-resolved photoluminescence spectra at various excitation powers and bath temperatures. The long lifetime of the type-II exciton, e.g., 2 mus at 5 K. enables us to obtain the precise information of the density relation. In a relatively low exciton-density region, the biexciton density obeys a well-known square law. At an exciton density around I x 10(10) cm(-2), the biexciton density suddenly increases with a threshold-like nature. This behavior, which is realized at temperatures up to 8 K, can be understood from Bose-Einstein statistics. (C) 2001 Elsevier Science B.V. All rights reserved.
Evidence for quantum statistics of the exciton-biexciton system in a GaAs/AlAs type-II superlattice PHYSICAL REVIEW B,63(19):195316/01-06 2001(May) Author:H Ichida; M Nakayama Abstract:We have investigated the decay processes of the photoluminescence from excitons and biexcitons in a (GaAs)(12)(AlAs)(12) type-II superlattice, where electrons and holes are confined in the X-valley potential of the AlAs layer and in the Gamma -valley potential of the GaAs layer, respectively. The long lifetime of the type-II exciton, e.g., similar to2 mus at a bath temperature of 5 K, enables us to obtain the precise information of the exciton-biexciton density relation estimated from the line-shape analysis of time-resolved photoluminescence spectra. In a relatively low-exciton-density region (a time region later than similar to1 mus), the biexciton density obeys a well-known square law. At an exciton density around 1 x 10(10) cm(-2). the biexciton density suddenly increases with a thresholdlike nature. This behavior can be understood from Bose-Einstein statistics of the exciton-biexciton system. We have examined the quantum-statistics characteristics of the exciton-biexciton system at various excitation powers and bath temperatures. It is found that the quantum-statistics regime is realized at the bath temperature up to 8 K under a low excitation power of the order of 100 mW/cm(2) and that it continues in a long time range of the order of submicroseconds.
Transition from Biexciton to Electron-Hole Plasma in Photoluminescence Properties of a GaAs/AlAs Multiple-Quantum-Well Structure Int. J. Modern Physics B,15(28-30):3793-3796 2001 Author:H. Ichida; K. Tsuji; K. Mizoguchi; H. Nishimura; M. Nakayama
Trtansition from biexcitons to electron-hole plasma in photoluminescence properties of a GaAs/AlAs multiple-quantum-well structure PROCEEDINGS OF THE 2000 INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER,:225-228 2001 Author:H Ichida; K Tsuji; K Mizoguchi; H Nishimura; M Nakayama Abstract:We report photoluminescence (PL) properties under various excitation-power conditions in a GaAs (15.0 nm)/AlAs(15.0 nm) multiple-quantum-well structure. We have clearly observed the PL bands from the biexciton and electron-hole plasma, and estimated the biexciton binding energy and the band-gap renormalization in the electron-hole plasma. The spectral change of the PL bands as a function of the excitation power demonstrates the transition from the biexciton to the electron-hole plasma under intense excitation conditions.
Stimulated emission from exciton-exciton scattering in CuBr thin films JOURNAL OF LUMINESCENCE,87-9:235-237 2000(May) Author:H Ichida; M Nakayama; H Nishimura Abstract:We have investigated the photoluminescence properties under intense-excitation conditions in a CuBr thin film with the thickness of 100 nm grown on a (0 0 0 1) Al2O3 substrate by a vacuum deposition method. We have detected a new photoluminescence band with the intensity dependence on the excitation power exhibiting threshold behavior and almost quadratic characteristics. The threshold power at excitation by a pulsed nitrogen laser is similar to 8 mu J/cm(2) at 10 K, and the emission energy is lower than that of the n = 1 free exciton by the energy difference of the n = 1 and 2 excitons. In addition, we have observed the optical gain in the energy region of the new photoluminescence band. From the above results. we conclude that the new photoluminescence band results from the stimulated emission due to the inelastic scattering between n = 1 excitons, so-called Pt emission. (C) 2000 Elsevier Science B.V. Ail rights reserved.
Thermal-strain-induced splitting of heavy- and light-hole exciton energies in CuI thin films grown by vacuum evaporation PHYSICAL REVIEW B,60(19):13879-13884 1999(Nov.) Author:D Kim; M Nakayama; O Kojima; Tanaka, I; H Ichida; T Nakanishi; H Nishimura Abstract:We hz;ve investigated thermal strain effects on excitons in CuI thin films with a thickness of 10-3000 nm grown by vacuum evaporation onto (0001) Al2O3, fused silica (quartz), and (001) NaCl substrates. The x-ray-diffraction patterns indicate that the crystalline thin film grown on every substrate is preferentially oriented along the [111] crystal axis. All the absorption spectra for the films with a thickness of 10-100 nm clearly show a doublet structure of the heavy-hole and light-hole excitons which are degenerate under a strain-free condition: The heavy-hole exciton has the higher energy for the Al2O3 and quartz substrates, while it has the lower energy for the NaCl one. The splitting energy increases as temperature decreases. This indicates that the in-plane strain, which results from the difference of the thermal expansion coefficients of CuI and the substrate, induces the splitting. The critical layer thickness for the thermal strain relaxation in the: Al2O3 substrate is estimated to be 400 nm from the observed exciton energies as a function of the layer thickness. The shifts of the exciton energies due to the thermal strain effects are successfully analyzed on the basis of a k.p perturbation theory. [S0163-1829(99)04543-9].
Bound-biexciton photoluminescence in CuCl thin films grown by vacuum deposition JOURNAL OF PHYSICS-CONDENSED MATTER,11(39):7653-7662 1999(Oct.) Author:M Nakayama; H Ichida; H Nishimura Abstract:We report on the photoluminescence properties of CuCl thin films with the thicknesses of 20 and 100 nm under intense-excitation conditions produced with a pulsed nitrogen laser. We have clearly observed two photoluminescence bands with a superlinear (almost quadratic) excitation-power dependence. The high-energy band is attributed to the well-known free-biexciton photoluminescence. The excitation-power dependence of the low-energy band exhibits a saturation behaviour when the free-biexciton band grows remarkably. In addition, the energy and shape of the low-energy band do not change with the excitation power, which is contrary to the characteristics of the free-biexciton photoluminescence reflecting the thermal distribution in the energy dispersion. From these facts, we conclude that the origin of the low-energy band is a bound biexciton. Furthermore, we find from the temperature dependence of the PL properties that the thermal dissociation of the bound exciton induces the instability of the bound biexciton.
Photoluminescence of biexcitons and bound biexcitons from CuCl thin films PROCEEDINGS OF THE THIRD INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER - EXCON '98,98(25):489-494 1998 Author:H Ichida; D Kim; M Nakayama; H Nishimura Abstract:We have investigated the photoluminescence (PL) properties of CuCl thin films grown by a vacuum deposition under a high-density-excitation conditions with a pulsed nitrogen laser. We have clearly observed the PL band with superlinear excitation-power dependence in the low-energy side of the free-biexciton band. This band has two characteristics with the excitation-power dependence: The intensity exhibits the saturation behavior before the remarkable growth of the free-biexciton band, and the peak energy does not change. From these facts, we conclude that the origin is the bound biexciton: The binding energy is estimated to be 45 +/- 2 meV. In addition, we discuss the thermal stability of the bound biexciton from the temperature dependence of the PL spectra. We find that the thermal stability of the bound biexciton is similar to that of the bound exciton with the lowest binding energy of the exciton complexes.
Epitaxy effects on excitons in CuI thin films PROCEEDINGS OF THE THIRD INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER - EXCON '98,98(25):477-482 1998 Author:D Kim; Tanaka, I; O Kojima; H Ichida; M Nakayama; H Nishimura Abstract:We have investigated the absorption and luminescence spectra of the excitons in CuI thin films with thickness of 5-50 nm grown on (0001) Al2O3 and (001) NaCl substrates by vacuum deposition. The observed exciton energies indicate that the crystal structure of the CuI thin films on the Al2O3 substrate is a hexagonal (zincblende) type in the thickness region thinner (thicker) than 9 nm. On the other hand, for the fee-type NaCl substrate, such a crystal-structure change does not occur at any film thickness: All the films have a zincblende structure. In the zincblende-type CuI thin films, the absorption spectra clearly exhibit doublet structures around the Z(1,2) exciton energy. The doublet structures are due to the splitting of the heavy-hole- and light-hole-exciton energies, which are caused by the thermal strains arising from the difference of the thermal expansion coefficients of CuI and the substrate.
Preparation and optical properties of ZnS-CuInS2 quantum dots EXCON2018 (The 12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials) 2018(Jul. 10) Presenter:Yota Uehigashi; Taisuke Nakatani; Kazutaka Iida; Hideki Ichida; DaeGwi Kim
P-emission decay in ZnO from bulk to nanofilm ICSCE-7(The 7th International Conference on Spontaneous Coherence in Excitonic Systems) 2014(Apr. 23) Presenter:M. Bamba; S. Wakaiki; H. Ichida; M. Kawakami; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu
Peculiar thickness-dependent behavior of the ultrafast P-emission dynamics for ZnO thin films I DPC'13(18th International Conference on Dynamical Processes in Excited States of Solids) 2013(Aug. 08) Presenter:S. Wakaiki; H. Ichida; T. Kawase; M. Kawakami; M. Bamba; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu
Slow propagation of photon-like polaritons generated by exciton-exciton scattering in ZnO thin films UP2012 (18th International Conference on Ultrafast Phenomena) 2012(Jul. 09) Presenter:H. Ichida; S. Wakaiki; T. Kawase; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu
Thickness dependence of photoluminescence-decay profiles of exciton-exciton scattering in ZnO thin films 10th International Conference on Excitonic Processes in Condensed Matter, Nanostructured and Molecular Materials: EXCON2012 2012(Jul. 03) Presenter:S. Wakaiki; H. Ichida; T. Kawase; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu
Photoluminescence dynamics originating from exciton-exciton and exciton-electron scattering in a GaN thin film 5th International Conference on Optical, Optoelectronic and Photonic Materials and Applications: ICOOPMA2012 2011(Jun. 28) Presenter:S. Wakaiki; H. Tokumaru; H. Ichida; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama
Photoluminescence Dynamics due to Biexciton and Exciton-Exciton Scattering Process in Layered-type Semiconductor PbI2 16th International Conference on Luminescence & Optical Spectroscopy of Condensed Matter: ICL'11 2011(Jun. 28) Presenter:M. Ando; M. Yazaki; I. Katayama; H. Ichida; S. Wakaiki; Y.Kanematsu; J. Takeda
Single-Shot Time-Frequency Imaging of Phonon-Polariton Dispersion in Ferroelectric LiNbO3 CLEO 2011: Laser Science to Photonic Applications 2011(May 01) Presenter:I. Katayama; H. Sakaibara; H. Ichida; Y. Kanematsu; J. Takeda
Photoluminescence decay profiles of exciton-exciton scattering in a ZnO thin film 9th International Conference on Excitonic and Photonic Processes in Condensed and Nano Materials: EXCON10 2010(Jul. 13) Presenter:S. Wakaiki; H. Ichida; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama
Time-resolved photoluminescence spectra of electron-hole plasma coupled to longitudinal optical phonons in ZnO thin film The 15th International Conference on Luminescence and OpticalSpectroscopy of Condensed Matter: ICL08 2008(Jul. 09) Presenter:H. Ichida; S. Wakaiki; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama
Ultrafast Dynamics of Electron-Hole Plasma Coupled to Optical Phonons in a ZnO Thin Film 16th International Conference on Ultrafast Phenomena: UP2008 2008(Jun. 10) Presenter:H. Ichida; S. Wakaiki; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama
Low frequency modes of proteins observed by Raman scattering and terahertz spectroscopy The 6th International Conference on Biological Physics: ICBP2007 2007(Sep. 28) Presenter:Y. Kanematsu; R. Nakamura; H. Ichida; N. Hamada; Y. Sugawara; M. Ataka; H. Urabe
Ultrafast Photoluminescence Dynamics in ZnO Thin Films under Intense Excitation COnditions 16th International Conference on Dynamical Processes in Excited States of Solids: DPC07 2007(Jun. 18) Presenter:H. Ichida; S. Wakaiki; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama
The first observation of THz time-domain reflection spectra of lysozyme crystals Fifth East Asian Biophysics Symposium & Forty-Fourth Annual Meeting of the Biophysical Society of Japan 2P504 2006(Nov. 15) Presenter:H. Ichida; R. Nakamura; Y. Sugawara; H. Urabe; Y. Kanematsu
Pump-dump fluorescence spectroscopy for photoactive yellow protein Fifth East Asian Biophysics Symposium & Forty-Fourth Annual Meeting of the Biophysical Society of Japan 1P437 2006(Nov. 13) Presenter:Y. Kanemtsu; R. Nakamura; N. Hamada; H. Ichida; F. Tokunga
Enhancement of photoreaction in Photoactive Yellow Protein by infrared laser pulse irradiation Fifth East Asian Biophysics Symposium & Forty-Fourth Annual Meeting of the Biophysical Society of Japan 1P438 2006(Nov. 13) Presenter:S. ida; H. Ichida; R. Nakamura; N. Hamada; Y. Kanematsu; F. Tokunada
Temperature dependence of dynamical processes of photoluminescence from exciton-exciton scattering in CuI thin films 15th International Conference on Dynamical Processes in Exited States of Solids: DPC2005 2005(Aug. 03) Presenter:H. Ichida; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama
Inhomogeneity of Signaling States in the Photocycle of Photoactive Yellow Protein 15th International Conference on Dynamical Processes in Exited States of Solids: DPC2005 2005(Aug. 01) Presenter:K. Matsumoto; N. Hamada; K. Soda; H. Ichida; R. Nakamura; Y. Kanematsu; F. Tokunaga
First observation of fluorescence from a photo-induced intermediate state in photoactive yellow protein 15th International Conference on Dynamical Processes in Exited States of Solids: DPC2005 2005(Aug. 01) Presenter:A. Okafuji; N. Hamada; K. Soda; K. Matsumoto; H. Ichida; R. Nakamura; F. Tokunaga; Y. Kanematsu
Dynamical process of exciton-exciton scattering in CuI thin films The 14th International Conference on Luminescence:ICL05 2005(Jul. 27) Presenter:H. Ichida; T. Shimomura; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama
Visible and near-infrared luminescence from self-assembled lanthanide(III) clusters with organic photosensitizers The 14th International Conference on Luminescence:ICL05 2005(Jul. 27) Presenter:K. Manseki; Y. Hasegawa; Y. Wada; H. Ichida; Y. Kanematsu; T. Kushida
Double-gated spectral snapshots for biomolecular fluorescence The 14th International Conference on Luminescence:ICL05 2005(Jul. 27) Presenter:R. Nakamura; N. Hamada; H. Ichida; F. Tokunaga; Y. Kanematsu
Ultrafast Coherent Vibrational Motion of Photoactive Yellow Protein Molecules The 5th International Conference on Biological Physics: ICBP2004 2004(Aug. 23) Presenter:Y. Kanematsu; R. Nakamura; N. Hamada; H. Ichida; F. Tokunaga
THz-time-domain-reflection spectroscopy of D96N bacteriorhodopsin The 5th International Conference on Biological Physics: ICBP2004 2004(Aug. 23) Presenter:H. Ichida; H. Yoshitomi; N. Hamada; R. Nakamura; F. Tokunaga; Y. Kanematsu
Entire view of coherent oscillations in ultrafast fluorescence for photoactive yellow protein 14th International Conference on Ultrafast Phenomena 2004(Jul. 29) Presenter:R. Nakamura; N. Hamada; H. Ichida; Y. Kanematsu; F. Tokunaga
Bose-Einstein Statistics Behaviors of Exciton-Biexciton Photoluminescence Decay Processes in a GaAs/AlAs Type-II Superlattice The 11th International Conferenceon Modulated Semiconductor Structures 2003(Jul. 14) Presenter:M. Nakayama; H. Ichida
Control of Bose-Einstein-statistics behavior of the exciton-biexciton system in a GaAs/AlAs type-II superlattice 5th International Conference on Excitonic Processes in Condensed Matter: EXCON'02 2002(Jul. 25) Presenter:H. Ichida; M. Nakayama
Boson characteristics of the exciton-biexciton system in a GaAs/AlAs type-II superlattice International Conference on Dynamical Processes in Excited States of Solids: DPC'01 2001(Jul. 04) Presenter:H. Ichida; M. Nakayama
Transition from biexcitons to electron-hole plasma in photoluminescence properties of a GaAs/AlAs multiple-quantum-well structure 4th International Conference on Excitonic Processes in Condensed Matter EXCON'00 2000(Aug. 22) Presenter:H. Ichida; K. Tsuji; K. Mizoguchi; H. Nishimura; M. Nakayama
Stimulated emission from exciton-exciton scattering in CuBr thin films Int. Conf. on Luminescence and Optical Spectroscopy of Condensed Matter: ICL99 1999(Aug. 26) Presenter:H. Ichida; M. Nakayama; H. Nishimura
Photoluminescence of Biexcitons and Bound Biexcitons from CuCl Thin Films The third international conference on excitonic processes in condensed matter: EXCON ’98 1998(Nov. 04) Presenter:H. Ichida; D. Kim; M. Nakayama; H. Nishimura
Epitaxy effects on excitons in CuI thin films The third international conference on excitonic processes in condensed matter: EXCON ’98 1998(Nov. 04) Presenter:D. Kim; I. Tanaka; O. Kojima; H. Ichida; M. Nakayama; H. Nishimura
デザインを社会に活かす仕組みづくりとその課題 ～生きがいのあるくらしを創る オープンイノベーション・ワークショップを事例として～ 大分県立芸術文化短期大学研究紀要 = Bulletin of Oita prefectural College of Arts and Culture,(57):159-172 2020(Mar. 13) Author:松本 康史; 市田 秀樹; 森 淳一; 影山 隆之; 濱中 良志; 伊東 朋子 Abstract:超高齢・人口減少社会を背景に、介護・福祉現場に焦点を合わせ、デザインや科学技術を地域社会に活かす方法の確立に向けたワークショッフ群の試行と検討を行った。介護・福祉の現場において必要とされる「モノ」について、多様な専門家や研究者、医療関係者、学生、企業、一般市民など様々なセクターの参加者が集まり、それぞれの専門的な立場からの対話を通したモノづくりワークショップを実施し、その成果を外部に向けた発表や、インターネットなどのメディアを通した公開を介して社会に還元していき、地域社会への波及効果をねらった。本稿では、それらのワークショップ群の手法とその結果について報告する。Against the backdrop of an aging society and declining population, we focused on nursing care and welfare on the ground, and conducted and examined trial workshops to establish ways for utilizing design and science and technology in the local community. We implemented workshops on manufacturing where participants from various sectors including a variety of experts, researchers, medical professionals, students, companies and the general public gathered and held a dialogue about "things" that are important in nursing care and welfare sites from their respective professional points of view. The aim was to create a ripple effect on the local community by giving back the results to society through external presentations and disclosure to the public through media including the Internet. In this paper, we report the methods and results of these workshops.
光カーシャッターを用いたフェムト秒時間分解蛍光法と蛋白質研究への展開 レーザー学会研究会報告 = Reports on the Topical meeting of the Laser Society of Japan,318:35-39 2003(Dec. 15) Author:中村 亮介; 市田 秀樹; 濱田 格雄; 兼松 泰男; 徳永 史生
Thermal-strain-induced splitting of heavy- and light-hole exciton energies in Cul thin films grown by vacuum evaporation.(共著) Phys. Rev. B,60(19):13879-13884 1999 Author:KIM D; NAKAYAMA M; KOJIMA O; TANAKA I; ICHIDA H; NAKANISHI T; NISHIMURA H
Observation of Bound Biexciton Photoluminescence in CuCl Thin Films 光物性研究会論文集,:13-16 1998(Nov.) Author:市田秀樹; 金大貴; 中山正昭; 西村仁
研究者総覧
