ICHIDA, Hideki | Shinshu University Researcher Directory

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Position	Professor	Mail Address
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Research Field: Semiconductors, optical and atomic physics
Optical engineering and photonics
Applied materials

Research

Books, Articles, etc.: Articles
対話型・参加型教育を促す研究公正教材の国際動向 : 「Path2Integrity」「Dilemma Game」を題材に
RI : Research Integrity Reports,5:20-40 2021(Sep. 15)
Author:市田秀樹; 中村征樹

共同研究で何に留意すべきか : 国内の研究不正事案からの検討
RI : Research Integrity Reports,5:41-57 2021(Sep. 15)
Author:中村文彦; 市田秀樹; 中村征樹

二重投稿をめぐる動向 : 国際学会プロシーディング論文の扱いを中心に
RI : Research Integrity Reports,(4):31-48 2020(Mar. 31)
Author:市田秀樹; 中村征樹

Synthesis of Water-Soluble CuInS2 Quantum Dots by a Hydrothermal Method and Their Optical Properties
Bulletin of the Chemical Society of Japan,92(5):930-936 2019(Feb. 13)
Author:Kazutaka Iida; Yota Uehigashi; Hideki Ichida; Hang-Beom Bu; DaeGwi Kim
Abstract:Water-soluble CuInS2 (CIS) quantum dots (QDs) were hydrothermally prepared in the presence of N-acetyl-L-cysteine (NAC) as a stabilizer, and the optimal hydrothermal synthetic conditions for NAC-capped CIS QDs were investigated. The photoluminescence (PL) quantum yield (QY) of the CIS QDs synthesized under optimal conditions was 4%, which was comparable with the highest QY reported for water-soluble CIS core QDs. The introduction of a ZnS shell produced CIS/ZnS core/shell QDs and further increased the PL QY to 30%. Furthermore, bilayer structures consisting of Au nanoparticles and CIS/ZnS QDs were fabricated using a layer-bylayer method to enhance the PL of the CIS/ZnS QDs on the basis of the localized surface plasmon resonance of Au nanoparticles.

Hierarchical construction of SHG-active polar crystals by using multi-component crystals
CHEMICAL COMMUNICATIONS,52(94):13710-13713 2016
Author:Tetsuya Miyano; Tatsuya Sakai; Ichiro Hisaki; Hideki Ichida; Yasuo Kanematsu; Norimitsu Tohnai
Abstract:Organic salts composed of chiral amines and sulfonic acid with high hyperpolarizability allowed the construction of polar crystals with incorporated guest molecules. The polarity of the crystals was precisely regulated by employing suitable guest molecules. As a result, the crystals generated a strong second harmonic generation property.

Theory of the lifetime of an exciton incoherently created below its resonance frequency by inelastic scattering
PHYSICAL REVIEW B,91(23):235205/01-13 2015(Jun.)
Author:Motoaki Bamba; Shuji Wakaiki; Hideki Ichida; Kohji Mizoguchi; DaeGwi Kim; Masaaki Nakayama; Yasuo Kanematsu
Abstract:When an exciton in semiconductor is scattered and its energy is decreased far below the resonance energy of the bare exciton state, it has been considered that an exciton-polariton is created immediately by the scattering process because there is no exciton level at that energy. However, according to the recent time-resolved measurements of P emission originating from inelastic exciton-exciton scattering, it looks rather natural to consider that the exciton-polariton is created in a finite time scale which is restricted by a coherence volume of the exciton after the scattering. In this interpretation, the exciton remains in this time scale far below its resonance energy as a transient state in a series of processes. We propose an expression of the P-emission lifetime depending on the coherence volume of the scattered excitons through the conversion process from them to the polaritons. The coherence volume of the scattered excitons appears in the calculation of the inelastic scattering process on the assumption of a finite coherence volume of the bottleneck excitons. Time-resolved optical-gain measurements could be a way for investigating the validity of our interpretation.

Emission-energy dependence of ultrafast P-emission decay in ZnO from bulk to nanofilm
JOURNAL OF LUMINESCENCE,152:250-253 2014(Aug.)
Author:Shuji Wakaiki; Hideki Ichida; Motoaki Bamba; Toshiki Kawase; Masaki Kawakami; Kohji Mizoguchi; DaeGwi Kim; Masaaki Nakayama; Yasuo Kanematsu
Abstract:We have performed time-resolved photoluminescence (PL) spectroscopy for ZnO thin films with thicknesses of 90, 460, and 2800 nm under intense excitation condition. We clearly observed the P emission due to inelastic exciton-exciton scattering. It was found that, in the 460- and 2800-nm thick samples, the decay time of the P emission considerably depends on the detection energy inversely proportional to the group velocity of the polariton in a bulk crystal with each factor of proportionality. In contrast, the energy dependence is less remarkable in the 90-nm thick sample. The decay times are basically shortened with a decrease in the film thickness. The thickness dependence of the P-emission-decay profiles is explained by considering the crossover from the polariton modes in the 2800-nm thick sample (bulk-like film) to the exciton-/photon-like modes in the 90-nm thick sample (nanofilm). (C) 2013 Elsevier B.V. All rights reserved.

Thickness dependence of photoluminescence-decay profiles of exciton-exciton scattering in ZnO thin films
EUROPEAN PHYSICAL JOURNAL B,86(9):387/01-4 2013(Sep.)
Author:Shuji Wakaiki; Hideki Ichida; Toshiki Kawase; Kohji Mizoguchi; DaeGwi Kim; Masaaki Nakayama; Yasuo Kanematsu
Abstract:We have investigated the photoluminescence (PL) dynamics of ZnO thin films under intense excitation conditions using an optical-Kerr-gating method. The PL bands originating from exciton-exciton scattering (P emission) and biexciton (M emission) have been observed at 10 K. The ultrashort gating time of 0.6 ps has enabled us to obtain precise information of the temporal profiles of the peak energies and the intensities of the P- and M-PL bands. We have found that the decay time of the P emission becomes longer with increasing film thickness, while that of the M emission is independent of the film thickness. Although the decay time of the P emission is an increasing function of the film thickness, the relation is not in proportion, which is contrary to the predicted proportionality based on a simple model of photon-like polariton propagation.

Slow propagation of photon-like polaritons generated by exciton-exciton scattering in ZnO thin films
XVIIITH INTERNATIONAL CONFERENCE ON ULTRAFAST PHENOMENA,41:04014/01-3 2013
Author:H. Ichida; S. Wakaiki; T. Kawase; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu
Abstract:We report on the first observation of the thickness-dependent photoluminescence-decay time of exciton-exciton scattering in ZnO thin films, which indicates the slower propagation of photon-like polaritons compared to that in bulk by two orders magnitude.

Photoluminescence dynamics due to biexcitons and exciton-exciton scattering in the layered-type semiconductor PbI 2
Physical Review B - Condensed Matter and Materials Physics,86(15):155206 2012(Oct. 08)
Author:M. Ando; M. Yazaki; I. Katayama; H. Ichida; S. Wakaiki; Y. Kanematsu; J. Takeda
Abstract:The dynamics of photoluminescence due to biexcitons and exciton-exciton scattering (M and P emissions, respectively) has been investigated in the layered-type semiconductor PbI 2 by using the optical Kerr gate method. We simultaneously observed P and M emissions under high-density excitation. The M emission emerges instantaneously, whereas the P emission shows a delayed onset whose latency increases as the excitation photon energy increases. The latency to onset indicates that the P emission takes place after the relaxation of excitons with excess energy toward the bottleneck region via exciton-longitudinal optical (LO) phonon scattering processes. Based on the time-dependent peak energy shift of the P emission and a line-shape analysis of the M emission, we evaluated the effective temperatures of both photogenerated excitonic and biexcitonic systems as well as the self-energy due to the collisions among biexcitons. We conclude that these systems are separately formed in space owing to potential fluctuations between PbI 2 layers, and independently reach thermal equilibrium after ∼30 ps with different cooling processes. The exciton-exciton and exciton-LO phonon scattering processes play an important role in cooling the excitonic system, whereas the biexciton-biexciton and biexciton-exciton collisions are dominant in cooling the biexcitonic system. © 2012 American Physical Society.

Photoluminescence dynamics due to biexcitons and exciton-exciton scattering in the layered-type semiconductor PbI2
PHYSICAL REVIEW B,86(15):155206/01-6 2012(Oct.)
Author:M. Ando; M. Yazaki; I. Katayama; H. Ichida; S. Wakaiki; Y. Kanematsu; J. Takeda
Abstract:The dynamics of photoluminescence due to biexcitons and exciton-exciton scattering (M and P emissions, respectively) has been investigated in the layered-type semiconductor PbI2 by using the optical Kerr gate method. We simultaneously observed P and M emissions under high-density excitation. The M emission emerges instantaneously, whereas the P emission shows a delayed onset whose latency increases as the excitation photon energy increases. The latency to onset indicates that the P emission takes place after the relaxation of excitons with excess energy toward the bottleneck region via exciton-longitudinal optical (LO) phonon scattering processes. Based on the time-dependent peak energy shift of the P emission and a line-shape analysis of the M emission, we evaluated the effective temperatures of both photogenerated excitonic and biexcitonic systems as well as the self-energy due to the collisions among biexcitons. We conclude that these systems are separately formed in space owing to potential fluctuations between PbI2 layers, and independently reach thermal equilibrium after similar to 30 ps with different cooling processes. The exciton-exciton and exciton-LO phonon scattering processes play an important role in cooling the excitonic system, whereas the biexciton-biexciton and biexciton-exciton collisions are dominant in cooling the biexcitonic system.

Photoluminescence dynamics originating from exciton-exciton and exciton-electron scattering in a GaN thin film
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12,9(12):2497-2500 2012
Author:Shuji Wakaiki; Hitoshi Tokumaru; Hideki Ichida; Kohji Mizoguchi; DaeGwi Kim; Yasuo Kanematsu; Masaaki Nakayama
Abstract:We have investigated the photoluminescence (PL) dynamics of a GaN thin film under intense excitation conditions using an optical-Kerr-gating method. It has been found that the PL originating from the exciton-exciton scattering (P emission) appears at the temperatures lower than around 100 K, while at higher temperatures P emission vanishes and the PL originating from exciton-electron scattering (H emission) dominates. The ultrashort gating time of 0.6 ps enabled us to obtain precise information of the temporal profiles of the peak energy, the bandwidth, and the intensity of the P emission and H emission. We have found that the decay time of the H emission is shorter than that of the P emission. By taking into account the strong correlation between the decay time and the peak-energy position of the emissions, we conclude that the difference in the decay times is attributed to a change of the photon-like characteristics of the lower polariton branch that is the final state of the scattering process; namely, the photon-like component of the H emission is larger than that of the P emission. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Photoluminescence of excitons and biexcitons in (C4H9NH3)(2)PbBr4 crystals under high excitation density
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12,9(12):2501-2504 2012
Author:Yasuo Yamamoto; Goro Oohata; Kohji Mizoguchi; Hideki Ichida; Yasuo Kanematsu
Abstract:Optical properties in (C4H9NH3)(2)PbBr4 single crystals under high density excitation have been investigated by photoluminescence (PL) spectroscopy. The PL bands associated with the Gamma(1), Gamma(2) and Gamma(5) excitons and the biexcitons have been observed. While the Gamma(2) exciton and biexciton PL intensities are proportional to the 0.9 and 1.7 power of the excitation density, respectively, the Gamma(5) exciton PL intensity shows the nonlinear dependence on the excitation density. The excitation-density dependence of the PL bands is calculated by taking account of the dynamical change of the exciton and biexciton populations in an exciton-biexciton system consisting of two exciton states and a biexciton state. The calculated results well explain the nonlinear dependence of the Gamma(5) exciton PL intensity on the excitation density. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Selective Photoinduced Energy Transfer from a Thiophene Rotaxane to Acceptor
ORGANIC LETTERS,13(4):672-675 2011(Feb.)
Author:Kazuya Sakamoto; Yoshinori Takashima; Norio Hamada; Hideki Ichida; Hiroyasu Yamaguchi; Hitoshi Yamamoto; Akira Harada
Abstract:An energy transfer process was investigated using cyclodextrin-oligothiophene rotaxanes (2T-[2]rotaxane). The excited energy of 2T-[2]rotaxane is transferred to the sexithiophene derivative which is included in the cavity of beta-CD stoppers of 2T-[2]rotaxane.

Photoluminescence decay profiles of exciton-exciton scattering in a ZnO thin film
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 1,8(1):116-119 2011
Author:Shuji Wakaiki; Hideki Ichida; Kohji Mizoguchi; DaeGwi Kim; Yasuo Kanematsu; Masaaki Nakayama
Abstract:We have investigated the photoluminescence (PL) dynamics of a ZnO thin film under intense excitation conditions at 10 K. In the ZnO thin film, a PL band due to exciton-exciton scattering, the so-called P emission, appears. The optical-Kerr-gating method with the ultrashort gating time of 0.6 ps enabled us to obtain precise information of the temporal profiles including the peak energy, the bandwidth and the intensity of the P emission, at various detection energies. We have found that the decay time of the P emission gradually shortens with decreasing detection energy. The change in the decay time can be reasonably attributed to the photon-like characteristics of the lower polariton branch that is the final state of the exciton-exciton scattering. Furthermore, we have shown that the decay time of the P emission is phenomenologically determined by the group velocity of the final state although the origin of the long decay time remains to be elucidated. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Single-Shot Time-Frequency Imaging of Phonon-Polariton Dispersion in Ferroelectric LiNbO3
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO),:CFO5: pp.1-2 2011
Author:Ikufumi Katayama; Hiroyuki Sakaibara; Hideki Ichida; Yasuo Kanematsu; Jun Takeda
Abstract:Single-shot observation of phonon-polariton dispersion in LiNbO3 is demonstrated using optical Kerr-gate method with an echelon mirror. Forward-and backward-propagating phonon-polaritons are observed in the time-frequency two-dimensional image. (C)2009 Optical Society of America

Nonradiative Transition Processes between the Relaxed Excited States of Ag- Centers Doped in KI Crystals
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,79(12):124708/01-6 2010(Dec.)
Author:Taketoshi Kawai; Keita Hirayama; Hideki Ichida; Yasuo Kanematsu; Kohji Mizoguchi
Abstract:Decay kinetics and intensities of the luminescence bands for Ag- centers doped in KI single crystals have been investigated over a wide temperature range between 5 and 310 K. The Ag- centers doped in KI exhibit a broad and largely Stokes-shifted C* luminescence band at about 1.60 eV in addition to the A' and C' luminescence bands, whose peaks are 2.65 and 3.67 eV, respectively. The luminescence intensities of these bands change with temperature while complementing each other. Decay times of the luminescence decrease in the temperature range where the luminescence diminishes with increasing temperature. The temperature evolutions of the decay times and the intensities of the luminescence are analyzed on the basis of a configuration coordinate model including the thermally activated nonradiative transitions among the relaxed excited states. From the analysis results, the parameters characterizing the respective nonradiative transitions are determined.

Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature
OPTICAL MATERIALS,31(9):1323-1326 2009(Jul.)
Author:Yoshikazu Terai; Takehiro Tokuno; Hideki Ichida; Yasuo Kanematsu; Yasufumi Fujiwara
Abstract:Low-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light-emitting diode (LED) grown by organometallic vapor phase epitaxy. Under forward bias at 77 K, the EL spectra from a cleaved edge of the LED were dominated by the luminescence due to an Er-20 center, indicating that injected carriers contribute effectively to the excitation of the Er-20 center. Excitation cross-sections of Er ions by current injection were obtained by the current density dependence of the EL intensity and its time response. The excitation cross-sections depended on temperature and the active layer thickness of the LED. (C) 2008 Published by Elsevier B.V.

Decay kinetics of the luminescence of Ag- centers doped in alkali halide crystals
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,246(6):1327-1333 2009(Jun.)
Author:Taketoshi Kawai; Ichiro Akai; Hideki Ichida; Yasuo Kanematsu; Kohji Mizoguchi; Tsutomu Karasawa
Abstract:Decay kinetics of the luminescence of Ag centers doped in NaCl, KBr, and CsBr single crystals have been investigated in the temperature range from 4 K to 260 K. At low temperature, the radiative transitions from the T-1(lu) states in the Ag centers exhibit the luminescence with the decay time constants of about 1.3 ns. With increasing temperature, the decay time constants decrease, fleeting a thermally activated non-radiative transition process from the 1T(lu) to T-3(lu) states. On the other hand the luminescence due to the radiative transitions from the 3T(lu) states have the decay time constants of about 1.0 ms at low temperature and about 10 mu s above 80 K from the analysis of the temperature dependence of the decay time constants, the parameters of a three-level model and a thermally activated non-radiative process from the T-1(lu) to T-3(lu) states are obtained. The parameters are discussed as compared with those of other Tl+-type centers doped in alkali halide crystals. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Ultrafast Dynamics of Electron-Hole Plasma Coupled to Optical Phonons in a ZnO Thin Film
ULTRAFAST PHENOMENA XVI,92:226-+ 2009
Author:Hideki Ichida; Shuji Wakaiki; Kohji Mizoguchi; DaeGwi Kim; Yasuo Kanematsu; Masaaki Nakayama
Abstract:We have investigated ultrafast photoluminescence dynamics of electron-hole plasma coupled to longitudinal optical phonons in a ZnO thin film. The dynamical change of the electron-hole-pair density is characterized by time-resolved photoluminescence spectra measured with an optical-Kerr-gating method.

Transient vibronic structure in ultrafast fluorescence spectra of photoactive yellow protein
PHOTOCHEMISTRY AND PHOTOBIOLOGY,84(4):937-940 2008(Jul.)
Author:Ryosuke Nakamura; Norio Hamada; Hideki Ichida; Fumio Tokunaga; Yasuo Kanematsu
Abstract:The ultrafast photo-induced dynamics of wild-type photoactive yellow protein and its site-directed mutant of E46Q in aqueous solution was studied at room temperature by femtosecond fluorescence spectroscopy using the optical Kerr-gate method. The vibronic structure appears, depending on the excitation photon energy, in the time-resolved fluorescence spectra just after photoexcitation, which winds with time and disappears on a time scale of sub-picoseconds. This result indicates that the wavepacket is localized in the electronic excited state followed by dumped oscillations and broadening, and also that the initial condition of the wavepacket prepared depending on the excitation photon energy affects much the following ultrafast dynamics in the electronic excited state.

Fast photoluminescence dynamics in ZnO thin films under high-density excitation conditions
JOURNAL OF LUMINESCENCE,128(5-6):1059-1061 2008(May)
Author:H. Ichida; S. Wakaiki; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama
Abstract:We have investigated the photoluminescence (PL) dynamics of crystalline ZnO thin films prepared by an rf-magnetron sputtering method under high-density excitation conditions at 10 K using an optical-Kerr gating (OKG.) method. In the time-resolved PL spectra, we clearly observed the change of the PL properties with increasing time delay. In the initial time region up to about 5 ps, a broad PL band appears at the low-energy side of the free exciton band, which is considered to be due to the electron-hole plasma (EHP) accompanied with a band-gap renormalization. After the broad PL band vanishes, a narrow PL band originating from exciton-exciton scattering, the so-called P emission, appears; namely, its peak energy reaches the energy lower than the free exciton energy by the exciton binding energy. Thus, the time-resolved PL spectra clearly demonstrate the dynamical change from the EHP emission to the P emission at the cross-point time of about 5 ps, which corresponds to the dynamical phase transition from the EHP state to the exciton state. (C) 2008 Elsevier B.V. All rights reserved.

Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5 mu m light-emitting devices with extremely stable wavelength
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,205(1):64-67 2008(Jan.)
Author:Yasufumi Fujiwara; Shouichi Takemoto; Takehiro Tokuno; Keiji Hidaka; Hideki Ichida; Masato Suzuki; Yoshikazu Terai; Yasuo Kanematsu; Masayoshi Tonouchi
Abstract:Energy-transfer processes in Er,O-codoped GaAs (GaAs: Er,O) have been investigated by means of a pump and probe reflection technique. Time-resolved reflectivity exhibited a characteristic dip; a negative signal due to bandgap re-normalization in less than 1 ps and then a gradual recovery. In the recovery process, there were two components, fast and slow. The fast recovery time (several ps) was inversely proportional to Er concentration. The analysis based on a rate equation indicated that it is due to the capture of electrons by charged traps. The slow recovery (30-60 ps) was well coincident with the time (54 ps) predicted theoretically in the framework of a multiphonon-assisted model. Optical excitation cross section of Er ions in GaAs:Er,O has also been studied in various samples and shown to depend strongly on Er concentration. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5 μm light-emitting devices with extremely stable wavelength
Physica Status Solidi (A) Applications and Materials Science,205(1):64-67 2008(Jan.)
Author:Yasufumi Fujiwara; Shouichi Takemoto; Takehiro Tokuno; Keiji Hidaka; Hideki Ichida; Masato Suzuki; Yoshikazu Terai; Yasuo Kanematsu; Masayoshi Tonouchi
Abstract:Energy-transfer processes in Er,O-codoped GaAs (GaAs : Er,O) have been investigated by means of a pump and probe reflection technique. Time-resolved reflectivity exhibited a characteristic dip; a negative signal due to bandgap renormalization in less than 1 ps and then a gradual recovery. In the recovery process, there were two components, fast and slow. The fast recovery time (several ps) was inversely proportional to Er concentration. The analysis based on a rate equation indicated that it is due to the capture of electrons by charged traps. The slow recovery (30-60 ps) was well coincident with the time (54 ps) predicted theoretically in the framework of a multiphonon-assisted model. Optical excitation cross section of Er ions in GaAs:Er,O has also been studied in various samples and shown to depend strongly on Er concentration. © 2008 WILEY VCH Verlag GmbH & Co. KGaA.

Nonradiative processes at low temperature in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9,5(9):2864-+ 2008
Author:A. Fujita; T. Tokuno; K. Hidaka; K. Fujii; K. Tachibana; H. Ichida; Y. Terai; Y. Kanematsu; Y. Fujiwara
Abstract:Er-related photoluminescence (PL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) grown by organometallic vapor phase epitaxy. The GaAs:Er,O which was slightly doped with Er exhibited both strong Er-related and band-edge luminescence. In the temperature dependence of the Er-related PL intensity, the intensity decreased with increasing temperature from 4.2 K to 30 K. The temperature region was quite coincident with the region where the Carbon-related PL intensity decreased. This behaviour implies the existence of a Carbon-related nonradiative process in GaAs. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coherent oscillations in ultrafast fluorescence of photoactive yellow protein
JOURNAL OF CHEMICAL PHYSICS,127(21):215102/01-7 2007(Dec.)
Author:Ryosuke Nakamura; Norio Hamada; Hideki Ichida; Fumio Tokunaga; Yasuo Kanematsu
Abstract:The ultrafast photoinduced dynamics of photoactive yellow protein in aqueous solution were studied at room temperature by femtosecond fluorescence spectroscopy using an optical Kerr-gate technique. Coherent oscillations of the wave packet were directly observed in the two-dimensional time-energy map of ultrafast fluorescence with 180 fs time resolution and 5 nm spectral resolution. The two-dimensional map revealed that four or more oscillatory components exist within the broad bandwidth of the fluorescence spectrum, each of which is restricted in the respective narrow spectral region. Typical frequencies of the oscillatory modes are 50 and 120 cm(-1). In the landscape on the map, the oscillatory components were recognized as the ridges which were winding and descending with time. The amplitude of the oscillatory and winding behaviors is a few hundred cm(-1), which is the same order as the frequencies of the oscillations. The mean spectral positions of the oscillatory components in the two-dimensional map are well explained by considering the vibrational energies of intramolecular modes in the electronic ground state of the chromophore. The entire view of the wave packet oscillations and broadening in the electronic excited state, accompanied by fluorescence transitions to the vibrational sublevels belonging to the electronic ground state, was obtained. (c) 2007 American Institute of Physics.

Energy-relaxation dynamics of photogenerated excitons observed from time-resolved photoluminescence of exciton-exciton scattering in CuI thin films
PHYSICAL REVIEW B,76(8):085417/01-5 2007(Aug.)
Author:H. Ichida; Y. Kanematsu; K. Mizoguchi; D. Kim; M. Nakayama
Abstract:We have investigated the excitation-photon-energy dependence of time-resolved photoluminescence spectra of the P emission due to exciton-exciton scattering at 10 K in CuI thin films from the viewpoint of energy-relaxation dynamics of photogenerated excitons. The ultrashort time resolution of 0.4 ps using an optical-Kerr-gating method enabled us to obtain precise information of the relaxation dynamics under various excitation-photon-energy conditions. It is found that the onset time of the P emission, which corresponds to the time required for the appearance of the P emission after the irradiation of an excitation pulse, increases with increasing excitation-photon energy, while the rise and decay times of the P emission are independent on the excitation-photon energy. These results indicate that the onset time is connected with an energy-relaxation time of the photogenerated excitons toward the bottleneck region of the exciton-polariton. On the basis of a Frohlich-interaction model, we have quantitatively analyzed the energy-relaxation time, taking account of interactions between the excitons and longitudinal optical (LO) phonons, the so-called cascade process of LO-phonon scattering, in momentum space.

Ultrafast dynamics of photoactive yellow protein via the photoexcitation and emission processes
PHOTOCHEMISTRY AND PHOTOBIOLOGY,83(2):397-402 2007(Mar.)
Author:Ryosuke Nakamura; Norio Hamada; Hideki Ichida; Fumio Tokunaga; Yasuo Kanematsu
Abstract:Pump-dump fluorescence spectroscopy was performed for photoactive yellow protein (PYP) at room temperature. The effect of the dump pulse on the population of the potential energy surface of the electronic excited state was examined as depletion in the stationary fluorescence intensity. The dynamic behavior of the population in the electronic excited state was successfully probed in the various combinations of the pump-dump delay, the dump-pulse wavelength, the dump-pulse energy and the observation wavelength. The experimental results were compared with the results obtained by the femtosecond time-resolved fluorescence spectroscopy.

Dynamical process of exciton-exciton scattering in CuI thin films
JOURNAL OF LUMINESCENCE,122:396-398 2007(Jan.)
Author:Hideki Ichida; Takeya Shimomura; Kohji Mizoguchi; DaeGwi Kim; Yasuo Kanematsu; Masaaki Nakayama
Abstract:We have investigated the time-resolved photoluminescence (PL) spectra of CuI thin films under intense excitation conditions in the time region up to 25 ps. In the time-integrated PL spectra, we have clearly observed the PL band originated from the inelastic scattering of excitons, so-called P emission. The time-resolved PL spectra obtained by using an optical Kerr gating method exhibit that the peak energy of the P-emission band temporally changes in a picosecond region, which reflects the variation of the effective temperature of excitonic system. In the time profile of the P-emission band, we found the following two characteristic properties. One is that the decay time hardly depends on the excitation power. The other is that the rise time becomes considerably faster with increasing excitation power. Moreover, we have found that the inverse of the rise time of the P emission exhibits an almost quadratic dependence on the excitation power. (c) 2006 Elsevier B.V. All rights reserved.

Double-gated spectral snapshots for biomolecular fluorescence
JOURNAL OF LUMINESCENCE,122:297-300 2007(Jan.)
Author:Ryosuke Nakamura; Norio Hamada; Hideki Ichida; Fumio Tokunaga; Yasuo Kanematsu
Abstract:A versatile method to take femtosecond spectral snapshots of fluorescence has been developed based on a double gating technique in the combination of an optical Kerr gate and an image intensifier as an electrically driven gate set in front of a charge-coupled device detector. The application of a conventional optical-Kerr-gate method is limited to molecules with the short fluorescence lifetime up to a few hundred picoseconds, because long-lifetime fluorescence itself behaves as a source of the background signal due to insufficiency of the extinction ratio of polarizers employed for the Kerr gate. By using the image intensifier with the gate time of 200ps, we have successfully suppressed the background signal and overcome the application limit of optical-Kerr-gate method. The system performance has been demonstrated by measuring time-resolved fluorescence spectra for laser dye solution and the riboflavin solution as a typical sample of biomolecule. (c) 2006 Elsevier B.V. All rights reserved.

Visible and near-infrared luminescence from self-assembled lanthanide(III) clusters with organic photo sensitizers
JOURNAL OF LUMINESCENCE,122:262-264 2007(Jan.)
Author:Kazuhiro Manseki; Yasuchika Hasegawa; Yuji Wada; Hideki Ichida; Yasuo Kanematsu; Takashi Kushida
Abstract:Synthesis and photophysical properties of nonanuclear lanthanide(III) clusters, H-10[Ln(9)(hesa)(16)(mu-O)(10)(NO3)] (hesa = hexylsalicylate, Ln = Gd, Tb and Yb) were investigated. By the ligand excitation at 380 nm in methanol, the Tb cluster exhibited luminescence due to the 4f-4f transitions of Tb(III) around 487, 549, 580, 621, 646, 670, and 680 nm (D-5(4) -> 7F(i): i = 6, 5, 4, 3, 2, 1, 0). The Yb cluster also showed the photosensitized luminescence at around 980 nm (F-2(7/2) -> F-5/2). Especially, the Tb cluster gave a high emission quantum yield (Phi(s) > 0.90) in methanol. (c) 2006 Elsevier B.V. All rights reserved.

Temperature dependence of dynamical processes of photoluminescence from exciton-exciton scattering in CuI thin films
JOURNAL OF LUMINESCENCE,119:457-461 2006(Jul.)
Author:H Ichida; KO Mizoguchi; D Kim; Y Kanematsu; M Nakayama
Abstract:We have investigated the time-resolved photoluminescence spectra of the P emission due to exciton-exciton scattering in CuI thin films at various temperatures by using an optical-Kerr-gating method with a time resolution of 0.4 ps. It is found that the rise time of the P emission hardly changes with temperature. Since the rise time reflects collision processes of excitons in the lowest (n = 1) exciton state, the temperature dependence demonstrates that the exciton-collision rate is hardly influenced by temperature. On the other hand, the decay time of the P emission becomes faster from 8 to 5 ps with increasing temperature from 10 to 150K. This is due to the enhancement of the contribution of the photon state away from the polariton-bottleneck region to the photon-like polariton state leading to the P emission owing to thermal broadening in momentum space; namely the photon nature of the photon-like polariton becomes considerable. (c) 2006 Elsevier B.V. All rights reserved.

Inhomogeneity observed in the photocycle of photoactive yellow protein
JOURNAL OF LUMINESCENCE,119:122-126 2006(Jul.)
Author:N Hamada; K Matsumoto; K Soda; R Nakamura; H Ichida; F Tokunaga; Y Kanematsu
Abstract:In order to obtain insight into the hydrogen-bonding network surrounding the chromophore in biologically photofunctional proteins, photoactive yellow protein (PYP) has been modified by a combination of a site-directed mutagenesis and a substitution of the chromophore with an analogue. Fluorescence excitation and emission spectroscopies have been performed to evaluate the inhomogeneous nature of the spectra originated from the variation of conformational substates of the modified proteins. Noticeable inhomogeneity including contributions from two distinct substates has been observed for a PYP hybrid with the E46Q mutation and a substitution of the p-coumaric acid chromophore with caffeic acid. Transient absorption spectroscopy has been also conducted to clarify whether inhomogeneity affects the recovering kinetics or not. For the PYP hybrid, a remarkable difference of the recovery time from the signaling state has been observed, depending on the wavelength of the excitation light triggering the photocycle. Although this observation is preliminary, it indicates that kinetically inhomogeneous species likely exist in the PYP hybrid. (c) 2006 Elsevier B.V. All rights reserved.

Ultrafast photoluminescence dynamics of biexcitons in a CuCl thin film grown by vacuum deposition
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 10,3(10):3464-+ 2006
Author:M. Nakayama; S. Wakaiki; K. Mizoguchi; D. Kim; H. Ichida; Y. Kanematsu
Abstract:We have investigated the ultrafast dynamics of the biexciton photoluminescence (PL) in a 500-nm thick CuCl thin film at 10 K using an optical Kerr gating method with a time resolution of similar to 1 ps. The CuCl thin film was grown by vacuum deposition. It is found that the biexciton-PL intensity has an excitation-power dependent rise time, which reflects the formation process of biexcitons, while its decay time is independent of the excitation power: 6.0 ps that is dominated by the transit time of the exciton polaritons travelling through the thin film. Furthermore, from the time-resolved PL spectra of the biexciton, we have observed a peak shift as a function of time, which is connected with the heating and cooling processes of the effective temperature in the excitonic system. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Photoluminescence dynamics of exciton-exciton scattering processes in CuI thin films
PHYSICAL REVIEW B,72(4):045210/01-5 2005(Jul.)
Author:H Ichida; Y Kanematsu; T Shimomura; K Mizoguchi; D Kim; M Nakayama
Abstract:We have investigated the dynamical process of exciton-exciton scattering in CuI thin films grown on a (100) NaCl substrate under intense-excitation conditions. The time-integrated photoluminescence spectra clearly exhibit two photoluminescence bands which originate from the excitonic molecule and the inelastic scattering of excitons, so-called P emission. The time-resolved PL spectra obtained by using an optical Kerr gating method show that the peak energy of the P-emission band temporally changes in a picosecond region, which reflects the thermal distribution of excitons. In the time profile of the P-emission band, the rise time that is around 1 ps becomes remarkably fast with increasing excitation power, while the decay time hardly depends on the excitation power. Moreover, we have found that the inverse of the rise time of the P emission exhibits an almost quadratic dependence for the excitation power. This finding suggests that the inverse of the rise time corresponds to the rate of the exciton-exciton scattering.

Entire view of coherent oscillations in ultrafast fluorescence for photoactive yellow protein
ULTRAFAST PHENOMENA XIV,79:607-609 2005
Author:R Nakamura; N Hamada; H Ichida; Y Kanematsu; F Tokunaga
Abstract:Remarkable oscillatory components are observed in the 2-dimentional-time-wavelength map of ultrafast fluorescence for photoactive yellow protein, by using the optical Kerr gating system with 180-fs time resolution and 5-nm spectral resolution.

Bose-Einstein statistics behaviors of exciton-biexciton photoluminescence decay processes in a GaAs/AlAs type-II superlattice
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,21(2-4):651-655 2004(Mar.)
Author:M Nakayama; H Ichida
Abstract:We have investigated the Bose-Einstein (BE) statistics behavior of the exciton-biexciton (EX-BEX) system during the photoluminescence decay processes at 5 K in a (GaAs)(12)/(AlAs)(12) type-II superlattice. Owing to the long lifetime of the type-II exciton, which is of the order of microseconds due to the indirect transition nature, we have precisely evaluated the density relation between the EX and BEX from the line-shape analysis of time-resolved photoluminescence spectra. At an EX density around 1 x 10(10)/cm(2), the BEX density suddenly increases with a threshold-like profile. This behavior is quantitatively explained by the framework of BE statistics of the EX-BEX system. It is demonstrated that the threshold-like increase of the BEX density is recurred by the incidence of a second-excitation pulse with a time delay, which leads to the dynamical control of the BE statistics behavior. (C) 2003 Elsevier B.V. All rights reserved.

Quantum-statistics behavior of the exciton-biexciton system in GaAs/AlAs type-II superlattices
PHASE TRANSITIONS,75(7-8):979-987 2002(Oct.)
Author:M Nakayama; H Ichida
Abstract:We have investigated the quantum-statistics behavior of the exciton-biexciton system from the photoluminescence properties in (GaAs)(m)/(AlAs)(m) type-II superlattices with m = 12 and 13 monolayers, where the lowest-energy type-II exciton consists of the n = 1X electron of AlAs and n = 1Gamma heavy hole of GaAs. The long exciton lifetime of the order of mus due to the indirect transition nature enables us to obtain precisely the density relation between the exciton and biexciton from the line-shape analysis of time-resolved photoluminescence spectra. In a relatively low exciton-density region, the biexciton density obeys a well-known square law. At an exciton density around 1 x 10(10) cm(-2), the biexciton density suddenly increases with a threshold-like nature. This behavior, which is realized at a bath temperature up to 8 K under an excitation power of the order of 100 mW/cm(2), results from the characteristics of Bose-Einstein statistics of the exciton-biexciton system.

Control of Bose-Einstein statistics behavior of the exciton-biexciton system in a GaAs/AlAs type-II superlattice
Nonlinear Optics,29(4-6):203-209 2002(Jun.)
Author:Hideki Ichida; Masaaki Nakayama

Trtansition from biexcitons to electron-hole plasma in photoluminescence properties of a GaAs/AlAs multiple-quantum-well structure
INTERNATIONAL JOURNAL OF MODERN PHYSICS B,15(28-30):3793-3796 2001(Dec.)
Author:H Ichida; K Tsuji; K Mizoguchi; H Nishimura; M Nakayama
Abstract:We report photoluminescence (PL) properties under various excitation-power conditions in a GaAs (15.0 nm)/AlAs(15.0 nm) multiple-quantum-well structure. We have clearly observed the PL bands from the biexciton and electron-hole plasma, and estimated the biexciton binding energy and the band-gap renormalization in the electron-hole plasma. The spectral change of the PL bands as a function of the excitation power demonstrates the transition from the biexciton to the electron-hole plasma under intense excitation conditions.

Boson characteristics of the exciton-biexciton system in a GaAs/AlAs type-II superlattice
JOURNAL OF LUMINESCENCE,94:379-383 2001(Dec.)
Author:H Ichida; M Nakayama
Abstract:We report on the appearance of Bose-Einstein statistics of the exciton-biexciton system in a (GaAs)(12)/(AlAs)(12) type-II superlattice. The density relation of the exciton and biexciton is estimated from time-resolved photoluminescence spectra at various excitation powers and bath temperatures. The long lifetime of the type-II exciton, e.g., 2 mus at 5 K. enables us to obtain the precise information of the density relation. In a relatively low exciton-density region, the biexciton density obeys a well-known square law. At an exciton density around I x 10(10) cm(-2), the biexciton density suddenly increases with a threshold-like nature. This behavior, which is realized at temperatures up to 8 K, can be understood from Bose-Einstein statistics. (C) 2001 Elsevier Science B.V. All rights reserved.

Evidence for quantum statistics of the exciton-biexciton system in a GaAs/AlAs type-II superlattice
PHYSICAL REVIEW B,63(19):195316/01-6 2001(May)
Author:H Ichida; M Nakayama
Abstract:We have investigated the decay processes of the photoluminescence from excitons and biexcitons in a (GaAs)(12)(AlAs)(12) type-II superlattice, where electrons and holes are confined in the X-valley potential of the AlAs layer and in the Gamma -valley potential of the GaAs layer, respectively. The long lifetime of the type-II exciton, e.g., similar to2 mus at a bath temperature of 5 K, enables us to obtain the precise information of the exciton-biexciton density relation estimated from the line-shape analysis of time-resolved photoluminescence spectra. In a relatively low-exciton-density region (a time region later than similar to1 mus), the biexciton density obeys a well-known square law. At an exciton density around 1 x 10(10) cm(-2). the biexciton density suddenly increases with a thresholdlike nature. This behavior can be understood from Bose-Einstein statistics of the exciton-biexciton system. We have examined the quantum-statistics characteristics of the exciton-biexciton system at various excitation powers and bath temperatures. It is found that the quantum-statistics regime is realized at the bath temperature up to 8 K under a low excitation power of the order of 100 mW/cm(2) and that it continues in a long time range of the order of submicroseconds.

Transition from Biexciton to Electron-Hole Plasma in Photoluminescence Properties of a GaAs/AlAs Multiple-Quantum-Well Structure
Int. J. Modern Physics B,15(28-30):3793-3796 2001
Author:H. Ichida; K. Tsuji; K. Mizoguchi; H. Nishimura; M. Nakayama

Trtansition from biexcitons to electron-hole plasma in photoluminescence properties of a GaAs/AlAs multiple-quantum-well structure
PROCEEDINGS OF THE 2000 INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER,:225-228 2001
Author:H Ichida; K Tsuji; K Mizoguchi; H Nishimura; M Nakayama
Abstract:We report photoluminescence (PL) properties under various excitation-power conditions in a GaAs (15.0 nm)/AlAs(15.0 nm) multiple-quantum-well structure. We have clearly observed the PL bands from the biexciton and electron-hole plasma, and estimated the biexciton binding energy and the band-gap renormalization in the electron-hole plasma. The spectral change of the PL bands as a function of the excitation power demonstrates the transition from the biexciton to the electron-hole plasma under intense excitation conditions.

Stimulated emission from exciton-exciton scattering in CuBr thin films
JOURNAL OF LUMINESCENCE,87-9:235-237 2000(May)
Author:H Ichida; M Nakayama; H Nishimura
Abstract:We have investigated the photoluminescence properties under intense-excitation conditions in a CuBr thin film with the thickness of 100 nm grown on a (0 0 0 1) Al2O3 substrate by a vacuum deposition method. We have detected a new photoluminescence band with the intensity dependence on the excitation power exhibiting threshold behavior and almost quadratic characteristics. The threshold power at excitation by a pulsed nitrogen laser is similar to 8 mu J/cm(2) at 10 K, and the emission energy is lower than that of the n = 1 free exciton by the energy difference of the n = 1 and 2 excitons. In addition, we have observed the optical gain in the energy region of the new photoluminescence band. From the above results. we conclude that the new photoluminescence band results from the stimulated emission due to the inelastic scattering between n = 1 excitons, so-called Pt emission. (C) 2000 Elsevier Science B.V. Ail rights reserved.

Thermal-strain-induced splitting of heavy- and light-hole exciton energies in CuI thin films grown by vacuum evaporation
PHYSICAL REVIEW B,60(19):13879-13884 1999(Nov.)
Author:D Kim; M Nakayama; O Kojima; Tanaka, I; H Ichida; T Nakanishi; H Nishimura
Abstract:We hz;ve investigated thermal strain effects on excitons in CuI thin films with a thickness of 10-3000 nm grown by vacuum evaporation onto (0001) Al2O3, fused silica (quartz), and (001) NaCl substrates. The x-ray-diffraction patterns indicate that the crystalline thin film grown on every substrate is preferentially oriented along the [111] crystal axis. All the absorption spectra for the films with a thickness of 10-100 nm clearly show a doublet structure of the heavy-hole and light-hole excitons which are degenerate under a strain-free condition: The heavy-hole exciton has the higher energy for the Al2O3 and quartz substrates, while it has the lower energy for the NaCl one. The splitting energy increases as temperature decreases. This indicates that the in-plane strain, which results from the difference of the thermal expansion coefficients of CuI and the substrate, induces the splitting. The critical layer thickness for the thermal strain relaxation in the: Al2O3 substrate is estimated to be 400 nm from the observed exciton energies as a function of the layer thickness. The shifts of the exciton energies due to the thermal strain effects are successfully analyzed on the basis of a k.p perturbation theory. [S0163-1829(99)04543-9].

Bound-biexciton photoluminescence in CuCl thin films grown by vacuum deposition
JOURNAL OF PHYSICS-CONDENSED MATTER,11(39):7653-7662 1999(Oct.)
Author:M Nakayama; H Ichida; H Nishimura
Abstract:We report on the photoluminescence properties of CuCl thin films with the thicknesses of 20 and 100 nm under intense-excitation conditions produced with a pulsed nitrogen laser. We have clearly observed two photoluminescence bands with a superlinear (almost quadratic) excitation-power dependence. The high-energy band is attributed to the well-known free-biexciton photoluminescence. The excitation-power dependence of the low-energy band exhibits a saturation behaviour when the free-biexciton band grows remarkably. In addition, the energy and shape of the low-energy band do not change with the excitation power, which is contrary to the characteristics of the free-biexciton photoluminescence reflecting the thermal distribution in the energy dispersion. From these facts, we conclude that the origin of the low-energy band is a bound biexciton. Furthermore, we find from the temperature dependence of the PL properties that the thermal dissociation of the bound exciton induces the instability of the bound biexciton.

Photoluminescence of biexcitons and bound biexcitons from CuCl thin films
PROCEEDINGS OF THE THIRD INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER - EXCON '98,98(25):489-494 1998
Author:H Ichida; D Kim; M Nakayama; H Nishimura
Abstract:We have investigated the photoluminescence (PL) properties of CuCl thin films grown by a vacuum deposition under a high-density-excitation conditions with a pulsed nitrogen laser. We have clearly observed the PL band with superlinear excitation-power dependence in the low-energy side of the free-biexciton band. This band has two characteristics with the excitation-power dependence: The intensity exhibits the saturation behavior before the remarkable growth of the free-biexciton band, and the peak energy does not change. From these facts, we conclude that the origin is the bound biexciton: The binding energy is estimated to be 45 +/- 2 meV. In addition, we discuss the thermal stability of the bound biexciton from the temperature dependence of the PL spectra. We find that the thermal stability of the bound biexciton is similar to that of the bound exciton with the lowest binding energy of the exciton complexes.

Epitaxy effects on excitons in CuI thin films
PROCEEDINGS OF THE THIRD INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER - EXCON '98,98(25):477-482 1998
Author:D Kim; Tanaka, I; O Kojima; H Ichida; M Nakayama; H Nishimura
Abstract:We have investigated the absorption and luminescence spectra of the excitons in CuI thin films with thickness of 5-50 nm grown on (0001) Al2O3 and (001) NaCl substrates by vacuum deposition. The observed exciton energies indicate that the crystal structure of the CuI thin films on the Al2O3 substrate is a hexagonal (zincblende) type in the thickness region thinner (thicker) than 9 nm. On the other hand, for the fee-type NaCl substrate, such a crystal-structure change does not occur at any film thickness: All the films have a zincblende structure. In the zincblende-type CuI thin films, the absorption spectra clearly exhibit doublet structures around the Z(1,2) exciton energy. The doublet structures are due to the splitting of the heavy-hole- and light-hole-exciton energies, which are caused by the thermal strains arising from the difference of the thermal expansion coefficients of CuI and the substrate.

Presentations
Building a system that enables research institutions to conduct RCR surveys on their initiatives
ENRIO 2023 Congress on Research Integrity Practice 2023(Sep. 08)
Presenter:Masaki Nakamura; Hideki Ichida; Asako Miura; Jin Higashijima

Development of a Questionnaire to Assess the Current State of Research Integrity in Japan
Asia Pacific Research Integrity Network Meeting 2023 Tokyo, Japan 2023(Mar. 21)
Presenter:Masaki Nakamura; Hideki Ichida; Asako Miura; Jin Higashijima; Toshiya Kobayashi; Shoko Yamane; Fumihiko Nakamura; Mei Yamagata

A practical and systematic questionnaire survey to promote research integrity in Japan
Asia Pacific Research Integrity Network Meeting 2023 Tokyo, Japan 2023(Mar. 20)
Presenter:Hideki Ichida; Masaki Nakamura; Asako Miura; Jin Higashijima; Toshiya Kobayashi; Shoko Yamane; Fumihiko Nakamura; Mei Yamagata

An investigation on Correlation Analysis between MMG-meseared Muscle Fiber Activity Estimates and Echo Image Displacement
2-1P-18 Acoustical Society of Japan, 2021 Spring Meeting 2021(Mar. 11)
Presenter:大里一矢,山下涼介,石川直生,上原正志,樋口幸, 市田秀樹,福島学,石井秀樹,森竹隆広,柳川博文

1-Q-27 The clamped brachium MMG measurement by the upper/lower measurement point for muscle activity monitoring
1-Q-27 Acoustical Society of Japan, 2019 Autumn Meeting 2019(Sep. 04)
Presenter:Kazuya OSATO; Ryosuke YAMASHITA; Naoki ISHIKAWA; Masashi UEHARA; Sachi HIGUCHI; Hideki ICHIDA; Manabu FUKUSHIMA; Takahiro MORITAKE; Michiko KAZAMA; Hirofumi YANAGAWA

2-Q-49 An investigation on the Small Muscle Activity Measurement of Mechanomyogram(MMG)
2-Q-49, Acoustical Society of Japan, 2019 Spring Meeting 2019(Mar. 06)
Presenter:Kazuya Osato; Manabu Fukushima; Hideki Ichida; Shuhei Kawai; Masashi Uehara; Sachi Higuchi; Michiko Kazama; Takahiro Moritake; Hirofumi Yanagawa

20p-PB2-12 Preparation of ZnS-CuInS2 quantum dots
20p-PB2-12 2018(Sep. 20)
Presenter:Yota Uehigashi; Taisuke Nakatani; Kazutaka Iida; Hideki Ichida; DaeGwi Kim

1-P-42
1-P-42, Acoustical Society of Japan, 2018 Autumn Meeting 2018(Sep. 12)
Presenter:大里一矢; 大塚柊; 河合修平; 上原正志; 樋口幸; 市田秀樹; 福島学; 森竹隆広; 柳川博文

Preparation and optical properties of ZnS-CuInS2 quantum dots
EXCON2018 (The 12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials) 2018(Jul. 10)
Presenter:Yota Uehigashi; Taisuke Nakatani; Kazutaka Iida; Hideki Ichida; DaeGwi Kim

19p-P8-8 Photoluminescence properties of CuInS2 quantum dots prepared by a hydrothermal method
19p-P8-8 2018(Mar. 19)
Presenter:Uehigasi Y; Iida K; Ichida H; Kim D

科学技術を社会に生かす仕組み作りとその課題：オープンイノベーションの視点から
C-1-1(OS) 2017(Nov. 25)
Presenter:Hideki Ichida

高大社の協働講座による地域人材育成の可能性
大学教育学会第39回大会 2017(Jun. 11)
Presenter:吉村充功; 島岡成治; 近藤正一; 橋本堅次郎; 池畑義人; 市田秀樹; 鈴木照夫

地域企業求人動画制作を通した地域創生人材の育成～日本文理大学ＣＯＣ事業による“おおいた，つくりびと”プロジェクト～
第65回九州地区大学教育研究協議会 2016(Sep. 03)
Presenter:市田秀樹; 鈴木照男; 小牧渉; 泉丙完; 吉村充功

23pPSA-44 Temperature Dependence of Optical Properties in Colloidal CdTe/CdS Quantum Dots
Meeting Abstracts of the Physical Society of Japan 2015(Mar. 23)
Presenter:Watanabe T; Ichida H; Takahashi K; Shimura K; Nakayama M; Kim D

21pCP-12 Emission dynamics involving inelastic exciton-exciton scattering in ZnO films
Meeting Abstracts of the Physical Society of Japan 2015(Mar. 21)
Presenter:Wakaiki S; Ichida H; Bamba M; Kawase T; Kawakami M; Mizoguchi K; Kim D; Nakayama M; Kanematsu Y

21pCP-11 Does inelastic exciton-exciton scattering immediately create photon-like polaritons below exciton resonance frequency?
Meeting Abstracts of the Physical Society of Japan 2015(Mar. 21)
Presenter:Bamba M; Wakaiki S; Ichida H; Mizoguchi K; Kim D; Nakayama M; Kanematsu Y

10aPS-33 Temperature dependence of optical properties of CdTe quantum dots prepared by a colloidal method
Meeting abstracts of the Physical Society of Japan 2014(Sep. 10)
Presenter:Watanabe T; Ichida H; Takahashi K; Shimura K; Nakayama M; Kim D

P-emission decay in ZnO from bulk to nanofilm
ICSCE-7(The 7th International Conference on Spontaneous Coherence in Excitonic Systems) 2014(Apr. 23)
Presenter:M. Bamba; S. Wakaiki; H. Ichida; M. Kawakami; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu

27aCD-14 Thickness dependence of photoluminescence decay time of exciton-exciton scattering in ZnO thin films
Meeting abstracts of the Physical Society of Japan 2014(Mar. 27)
Presenter:Wakaiki S; Ichida H; Bamba M; Kawase T; Kawakami M; Mizoguchi K; Kim D; Nakayama M; Kanematsu Y

Peculiar thickness-dependent behavior of the ultrafast P-emission dynamics for ZnO thin films. ?I
DPC'13(18th International Conference on Dynamical Processes in Excited States of Solids) 2013(Aug. 08)
Presenter:S. Wakaiki; H. Ichida; T. Kawase; M. Kawakami; M. Bamba; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu

28pEJ-13 Thickness dependence of photoluminescence decay time of exciton-exciton scattering in ZnO thin films
Meeting abstracts of the Physical Society of Japan 2013(Mar. 28)
Presenter:Wakaiki S; Ichida H; Kawase T; Kawakami M; Mizoguchi K; Kim D; Nakayama M; Kanematsu Y

18aPSB-28 Relaxation Process of Exciton-Biexciton luminescence in Organic-inorganic semiconductor (C_4H_9NH_3)_2PbBr_4
Meeting abstracts of the Physical Society of Japan 2012(Sep. 18)
Presenter:Yamamoto Y; Oohata G; Mizoguchi K; Ichida H; Kanematsu Y

18pHB-8 Polariton lasing in a CuBr microcavity
Meeting abstracts of the Physical Society of Japan 2012(Sep. 18)
Presenter:Kawase T; Kanatani Y; Ichida H; Wakaiki S; Kim D; Kanematsu Y; Nakayama M

Slow propagation of photon-like polaritons generated by exciton-exciton scattering in ZnO thin films
UP2012 (18th International Conference on Ultrafast Phenomena) 2012(Jul. 09)
Presenter:H. Ichida; S. Wakaiki; T. Kawase; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu

Thickness dependence of photoluminescence-decay profiles of exciton-exciton scattering in ZnO thin films
10th International Conference on Excitonic Processes in Condensed Matter, Nanostructured and Molecular Materials: EXCON2012 2012(Jul. 03)
Presenter:S. Wakaiki; H. Ichida; T. Kawase; K. Mizoguchi; D. Kim; M. Nakayama; Y. Kanematsu

16p-E4-19
第59回応用物理学関係連合講演会 2012(Mar. 16)
Presenter:若生周治; 市田秀樹; 川瀬稔貴; 溝口幸司; 金大貴; 中山正昭; 兼松泰男

24aTL-4 Dependence on the Detection Wavelength of Terahertz Phonon Polariton in LiNbO_3 Single Crystal
Meeting abstracts of the Physical Society of Japan 2011(Sep. 24)
Presenter:Sakaibara Hiroyuki; Katayama Ikufumi; Ichida Hideki; Kanematsu Yasuo; Takeda Jun

21pPSA-41 Quasi-phase matching for shaped mid-infrared pulse generation from broadband near-infrared pulses
Meeting abstracts of the Physical Society of Japan 2011(Sep. 21)
Presenter:Nakamura R; Ichida H; Kanematsu Y

21pPSA-65 Relaxation processes among the adiabatic potential surfaces due to the Jahn-Teller distortion in KI:Ag^-
Meeting abstracts of the Physical Society of Japan 2011(Sep. 21)
Presenter:Hirayama K; Kawai T; Ichida H; Kanematsu Y; Mizoguchi K

21pPSB-15 Dynamical transition process from electron-hole plasma emission to exciton-exciton scattering emission in a ZnO thin film
Meeting abstracts of the Physical Society of Japan 2011(Sep. 21)
Presenter:Wakaiki S; Ichida H; Mizoguchi K; Kim D; Kanematsu Y; Nakayama M

Photoluminescence dynamics originating from exciton-exciton and exciton-electron scattering in a GaN thin film
5th International Conference on Optical, Optoelectronic and Photonic Materials and Applications: ICOOPMA2012 2011(Jun. 28)
Presenter:S. Wakaiki; H. Tokumaru; H. Ichida; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama

Photoluminescence Dynamics due to Biexciton and Exciton-Exciton Scattering Process in Layered-type Semiconductor PbI2
16th International Conference on Luminescence & Optical Spectroscopy of Condensed Matter: ICL'11 2011(Jun. 28)
Presenter:M. Ando; M. Yazaki; I. Katayama; H. Ichida; S. Wakaiki; Y.Kanematsu; J. Takeda

Single-Shot Time-Frequency Imaging of Phonon-Polariton Dispersion in Ferroelectric LiNbO3
CLEO 2011: Laser Science to Photonic Applications 2011(May 01)
Presenter:I. Katayama; H. Sakaibara; H. Ichida; Y. Kanematsu; J. Takeda

26aHA-4 Single-shot Time-frequency Imaging of Phonon Polariton Dispersion in LiNbO_3 Single Crystal
Meeting abstracts of the Physical Society of Japan 2011(Mar. 26)
Presenter:Sakakibara Hiroyuki; Katayama Ikufumi; Ichida Hideki; Kanematsu Yasuo; Takeda Jun

25pPSA-46 Luminescence dynamics due to exciton-exciton scattering and biexciton in layered semiconductor PbI_2 II
Meeting abstracts of the Physical Society of Japan 2011(Mar. 25)
Presenter:Ando M; Katayama I; Ichida H; Wakaiki S; Kanematsu Y; Takeda J

25pPSB-54 Transient absorption spectroscopic studies of KI:Ag^-
Meeting abstracts of the Physical Society of Japan 2010(Sep. 25)
Presenter:Hirayama K; Kawai T; Ichida H; Kanematsu Y; Mizoguchi K

Photoluminescence decay profiles of exciton-exciton scattering in a ZnO thin film
9th International Conference on Excitonic and Photonic Processes in Condensed and Nano Materials: EXCON10 2010(Jul. 13)
Presenter:S. Wakaiki; H. Ichida; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama

23aPS-32 Red-edge dumping effects in Pump-Dump-Fluorescence spectra [IV]
Meeting abstracts of the Physical Society of Japan 2010(Mar. 23)
Presenter:Ichida H; Nakamura R; Hamada N; Kanematsu Y

19p-TM-14
第57回応用物理学関係連合講演会 2010(Mar. 19)
Presenter:若生周治; 市田秀樹; 溝口幸司; 金大貴; 兼松泰男; 中山正昭

27aPS-39 Red-edge dumping effects in Pump-Dump-Fluorescence spectra
Meeting abstracts of the Physical Society of Japan 2009(Sep. 27)
Presenter:Ichida H; Nakamura R; Hamada N; Kanematsu Y

27aPS-51 Luminescence Dynamics of KI:Ag
Meeting abstracts of the Physical Society of Japan 2009(Sep. 27)
Presenter:Hirayama K; Kawai T; Ichida H; Kanematsu Y; Mizoguchi K

30pVA-1 Red-edge dumping effects in Pump-Dump-Fluorescence spectra
Meeting abstracts of the Physical Society of Japan 2009(Mar. 30)
Presenter:Ichida H; Nakamura R; Hamada N; Kanematsu Y

28pPSA-22 Red-edge dumping effects in Pump-Dump-Fluorescence spectra [II]
Meeting abstracts of the Physical Society of Japan 2009(Mar. 28)
Presenter:Kanematsu Y; Ichida H; Hamada N; Nakamura R

20aPS-96 Rotational Dynamics of immobilized protein
Meeting abstracts of the Physical Society of Japan 2008(Sep. 20)
Presenter:Hamada Norio; Ichida Hideki; Nakamura Ryosuke; Ijiri Hiroshi; Mori Hajime; Kanematsu Yasuo

20aYG-10 "Molecular recognition" by tailored optical pulses
Meeting abstracts of the Physical Society of Japan 2008(Sep. 20)
Presenter:Kanematsu Y; Ichida H; Tanigawa K; Hamada N; Nakamura R

Time-resolved photoluminescence spectra of electron-hole plasma coupled to longitudinal optical phonons in ZnO thin film
The 15th International Conference on Luminescence and OpticalSpectroscopy of Condensed Matter: ICL08 2008(Jul. 09)
Presenter:H. Ichida; S. Wakaiki; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama

Ultrafast Dynamics of Electron-Hole Plasma Coupled to Optical Phonons in a ZnO Thin Film
16th International Conference on Ultrafast Phenomena: UP2008 2008(Jun. 10)
Presenter:H. Ichida; S. Wakaiki; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama

26aPS-46 Time-resolved-photoluminescence and transient-absorption properties under high-density-excitation conditions in ZnO thin films
Meeting abstracts of the Physical Society of Japan 2008(Mar. 26)
Presenter:Ichida H; Wakaiki S; Mizoguchi K; Kim D; Kanematsu Y; Nakayama M

26aPS-33 Photo-induced dynamics of photoactive protein : Excitation energy dependence
Meeting abstracts of the Physical Society of Japan 2008(Mar. 26)
Presenter:Nakamura Ryosuke; Hamada Norio; Ichida Hideki; Tokunaga Fumio; Kanematsu Yasuo

23pYD-3 Terahertz oscillation of protein crystals
Meeting abstracts of the Physical Society of Japan 2008(Mar. 23)
Presenter:Kanematsu Yasuo; Nakamura Ryosuke; Ichida Hideki; Hamada Norio; Sugawara Yoko; Ataka Mitsuo; Urabe Hisako

26aPS-35 Relaxation processes among the adiabatic potential surfaces of KI:Ag
Meeting abstracts of the Physical Society of Japan 2008(Feb. 29)
Presenter:Kawai T; Ichida H; Kanematsu Y; Mizoguchi K

1P325 Immobilization of diverse foreign proteins in viral polyhedra(Bioengineering, and new biophysical techniques and instrumentation,Oral Presentations)
Seibutsu Butsuri 2007(Dec. 21)
Presenter:Hamada Norio; Nakamura Ryousuke; Ijiri Hiroshi; Nakai Daisuke; Akagi Yuichiro; Hibi Hanako; Hirohata Rie; Ichida Hideki; Tokunaga Fumio; Kanematsu Yasuo; Mori Hajime

1P353 Low frequency modes of crystalline lysozyme and BPTI observed by Raman scattering and terahertz time-domain spectroscopy(New biophysical techniques and instrumentation,Poster Presentations)
Seibutsu Butsuri 2007(Dec. 21)
Presenter:Ichida Hideki; Nakamura Ryosuke; Hamada Norio; Sugawara Yoko; Ataka Mitsuo; Urabe Hisako; Kanematsu Yasuo

Low frequency modes of proteins observed by Raman scattering and terahertz spectroscopy
The 6th International Conference on Biological Physics: ICBP2007 2007(Sep. 28)
Presenter:Y. Kanematsu; R. Nakamura; H. Ichida; N. Hamada; Y. Sugawara; M. Ataka; H. Urabe

23pPSB-12 Photoluminescence dynamics of phonon side band peculiar to electron-hole-plasma conditions in ZnO thin films
Meeting abstracts of the Physical Society of Japan 2007(Sep. 23)
Presenter:Ichida H; Wakaiki S; Mizoguchi K; Kim D; Kanematsu Y; Nakayama M

23pPSA-101 Pump-dump spectroscopy using chirped pulses
Meeting abstracts of the Physical Society of Japan 2007(Sep. 23)
Presenter:Nakamura Ryosuke; Hamada Norio; Ichida Hideki; Tokunaga Fumio; Kanematsu Yasuo

21aRK-5 Low frequency modes of protein crystals observed by terahertz and Raman scattering spectroscopy
Meeting abstracts of the Physical Society of Japan 2007(Sep. 21)
Presenter:Kanematsu Yasuo; Nakamura Ryosuke; Ichida Hideki; Hamada Norio; Sugawara Yoko; Ataka Mitsuo; Urabe Hisako

4p-ZK-4
第68回応用物理学会学術講演会 2007(Sep. 04)
Presenter:藤田麻史; 徳野剛大; 日高圭二; 市田秀樹; 寺井慶和; 兼松泰男; 藤原康文

Ultrafast Photoluminescence Dynamics in ZnO Thin Films under Intense Excitation COnditions
16th International Conference on Dynamical Processes in Excited States of Solids: DPC07 2007(Jun. 18)
Presenter:H. Ichida; S. Wakaiki; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama

30a-ZW-5
第54回応用物理学関係連合講演会 2007(Mar. 30)
Presenter:藤田麻史; 徳野剛大; 日高圭二; 藤井慧; 橘康介; 市田秀樹; 寺井慶和; 兼松泰男; 藤原康文

19pPSB-21 Time-resolved photoluminescence spectra of ZnO thin films by using optical-Kerr gating method (III) : temperature dependence
Meeting abstracts of the Physical Society of Japan 2007(Mar. 19)
Presenter:Wakaiki S; Ichida H; Mizoguchi K; Kim D; Kanematsu Y; Nakayama M

19aZA-4 Initial dynamics of photoreceptor protein revealed by pump-dump fluorescence spectroscopy
Meeting abstracts of the Physical Society of Japan 2007(Mar. 19)
Presenter:Kanematsu Yasuo; Nakamura Ryosuke; Hamada Norio; Ichida Hideki; Tokunaga Fumio

19pTC-10 Effect on the Electronic State of Chromophore by Hydrogen Bond Network in Photoactive Yellow Protein
Meeting abstracts of the Physical Society of Japan 2007(Mar. 19)
Presenter:Okamoto Kentaro; Nakamura Ryosuke; Ichida Hideki; Hamaad Norio; Okamura Taka-aki; Yamamoto Hitoshi; Kanematsu Yasuo

18pZB-8 Time-resolved-photoluminescence and transient-absorption properties under high-density-excitation conditions in ZnO thin films
Meeting abstracts of the Physical Society of Japan 2007(Mar. 18)
Presenter:Ichida H; Wakaiki S; Mizoguchi K; Kim D; Kanematsu Y; Nakayama M

The first observation of THz time-domain reflection spectra of lysozyme crystals
Fifth East Asian Biophysics Symposium & Forty-Fourth Annual Meeting of the Biophysical Society of Japan 2006(Nov. 15)
Presenter:H. Ichida; R. Nakamura; Y. Sugawara; H. Urabe; Y. Kanematsu

Pump-dump fluorescence spectroscopy for photoactive yellow protein
Fifth East Asian Biophysics Symposium & Forty-Fourth Annual Meeting of the Biophysical Society of Japan 2006(Nov. 13)
Presenter:Y. Kanemtsu; R. Nakamura; N. Hamada; H. Ichida; F. Tokunga

Enhancement of photoreaction in Photoactive Yellow Protein by infrared laser pulse irradiation
Fifth East Asian Biophysics Symposium & Forty-Fourth Annual Meeting of the Biophysical Society of Japan 2006(Nov. 13)
Presenter:S. ida; H. Ichida; R. Nakamura; N. Hamada; Y. Kanematsu; F. Tokunada

25pWB-8 Time-resolved photoluminescence spectra of ZnO thin films by using optical-Kerr gating method (I) : excitation-power dependence
Meeting abstracts of the Physical Society of Japan 2006(Sep. 25)
Presenter:Wakaiki S; Ichida H; Mizoguchi K; Kim D; Kanematsu Y; Nakayama M

25pWB-9 Time-resolved photoluminescence spectra of ZnO thin films by using optical-Kerr gating method (II) : excitation-energy dependence
Meeting abstracts of the Physical Society of Japan 2006(Sep. 25)
Presenter:Ichida H; Wakaiki S; Mizoguchi K; Kim D; Kanematsu Y; Nakayama M

24pPSB-24 Electronic State Regulation of the Chromophore in Photoreceptor Proteins by Hydrogen Bond Network
Meeting abstracts of the Physical Society of Japan 2006(Sep. 24)
Presenter:Okamoto Kentaro; Nakamura Ryosuke; Ichida Hideki; Hamada Norio; Okamura Taka-aki; Yamamoto Hitoshi; Kanematsu Yasuo

23pRC-4 THz time-domain reflection spectra of lysozyme crystals
Meeting abstracts of the Physical Society of Japan 2006(Sep. 23)
Presenter:Kanematsu Y; Ichida H; Nakamura R; Sugawara Y; Urabe H

23pRC-3 Pump-dump spectroscopy for photoreceptor proteins
Meeting abstracts of the Physical Society of Japan 2006(Sep. 23)
Presenter:Nakamura Ryosuke; Hamada Norio; Ichida Hideki; Tokunaga Fumio; Kanematsu Yasuo

23pRC-2 Infrared light irradiation effect on the photocycle of Photoactive Yellow Protein (II)
Meeting abstracts of the Physical Society of Japan 2006(Sep. 23)
Presenter:Ida S; Ichida H; Hamada N; Nakamura R; Kanematsu Y; Tokunaga F

30a-H-6
第67回応用物理学会学術講演会 2006(Aug. 30)
Presenter:徳野剛大; 河村晋吾; 市田秀樹; 寺井慶和; 小泉淳; 竹田美和; 兼松泰男; 藤原康文

28aPS-19 Excitation-energy dependence of photoluminescence dynamics of exciton-exciton scattering processes in CuI thin films
Meeting abstracts of the Physical Society of Japan 2006(Mar. 28)
Presenter:Ichida H; Mizoguchi K; Kim D; Kanematsu Y; Nakayama M

28pPSB-66 The properties of Polyhedron
Meeting abstracts of the Physical Society of Japan 2006(Mar. 28)
Presenter:Hamada N; Nakamura R; Ichida H; Tokunaga F; Mori H; Kanematsu Y

28pPSB-57 Infrared light irradiation effect on the photocycle of Photoactive Yellow Protein
Meeting abstracts of the Physical Society of Japan 2006(Mar. 28)
Presenter:Ida S; Ichida H; Hamada N; Nakamura R; Kanematsu Y; Tokunaga F

28pPSB-56 Photo-induced structural modulation of proteins III
Meeting abstracts of the Physical Society of Japan 2006(Mar. 28)
Presenter:Nakamura Ryosuke; Hamada Norio; Ichida Hideki; Tokunaga Fumio; Kanematsu Yasuo

27pTH-6 Analysis of the interaction between a photoreceptor protein and fluorescent probes
Meeting abstracts of the Physical Society of Japan 2006(Mar. 27)
Presenter:Matsumoto K; Hamada N; Ichida H; Nakamura R; Kanematsu Y; Tokunaga F

23p-ZR-13
第53回応用物理学関係連合講演会 2006(Mar. 23)
Presenter:徳野剛大; 河村晋吾; 市田秀樹; 寺井慶和; 小泉淳; 竹田美和; 兼松泰男; 藤原康文

3P340 Properties of Polyhedra
Seibutsu Butsuri 2005(Nov. 25)
Presenter:Hamada N; Nakamura R; Ichida H; Kanematsu Y; Tokunaga F; Mori H

2P295 Pump-dump-fluorescence spectroscopy of photoactive proteins
Seibutsu Butsuri 2005(Nov. 24)
Presenter:Nakamura R; Okafuji A; Hamada N; Ichida H; Tokunaga F; Kanematsu Y

1P262 IR-light-induced structural modulation of Photoactive Yellow Protein
Seibutsu Butsuri 2005(Nov. 23)
Presenter:Ichida H; Matsumoto K; Hamada N; Nakamura R; Tokunaga F; Kanematsu Y

22pPSA-3 Analysis of fluorescence excitation energy transfer in photoreceptor proteins
Meeting abstracts of the Physical Society of Japan 2005(Sep. 22)
Presenter:Hamada Norio; Nakamura Ryosuke; Ichida Hideki; Matsumoto Kengo; Tokunaga Fumio; Kanematsu Yasuo

21pXG-1 Photo-induced structural modulation of proteins I : Pump-dump fluorescence depletion
Meeting abstracts of the Physical Society of Japan 2005(Sep. 21)
Presenter:Nakamura Ryosuke; Hamada Norio; Ichida Hideki; Tokunaga Fumio; Kanematu Yasuo

21pXG-2 Photo-induced structural modulation of proteins II
Meeting abstracts of the Physical Society of Japan 2005(Sep. 21)
Presenter:Ichida H; Nakamura R; Hamada N; Matsumoto K; Tokunaga F; Kanematsu Y

20aXB-3 Temperature dependence of photoluminescence dynamics of exciton-exciton scattering processes in Cul thin films
Meeting abstracts of the Physical Society of Japan 2005(Sep. 20)
Presenter:Ichida H; Mizoguchi K; Kim D; Kanematsu Y; Nakayama M

9a-K-3
第66回応用物理学会学術講演会 2005(Sep. 09)
Presenter:徳野剛大; 市田秀樹; 寺井慶和; 小泉淳; 竹田美和; 兼松泰男; 藤原康文

Temperature dependence of dynamical processes of photoluminescence from exciton-exciton scattering in CuI thin films
15th International Conference on Dynamical Processes in Exited States of Solids: DPC2005 2005(Aug. 03)
Presenter:H. Ichida; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama

Inhomogeneity of Signaling States in the Photocycle of Photoactive Yellow Protein
15th International Conference on Dynamical Processes in Exited States of Solids: DPC2005 2005(Aug. 01)
Presenter:K. Matsumoto; N. Hamada; K. Soda; H. Ichida; R. Nakamura; Y. Kanematsu; F. Tokunaga

First observation of fluorescence from a photo-induced intermediate state in photoactive yellow protein
15th International Conference on Dynamical Processes in Exited States of Solids: DPC2005 2005(Aug. 01)
Presenter:A. Okafuji; N. Hamada; K. Soda; K. Matsumoto; H. Ichida; R. Nakamura; F. Tokunaga; Y. Kanematsu

Dynamical process of exciton-exciton scattering in CuI thin films
The 14th International Conference on Luminescence:ICL05 2005(Jul. 27)
Presenter:H. Ichida; T. Shimomura; K. Mizoguchi; D. Kim; Y. Kanematsu; M. Nakayama

Visible and near-infrared luminescence from self-assembled lanthanide(III) clusters with organic photosensitizers
The 14th International Conference on Luminescence:ICL05 2005(Jul. 27)
Presenter:K. Manseki; Y. Hasegawa; Y. Wada; H. Ichida; Y. Kanematsu; T. Kushida

Double-gated spectral snapshots for biomolecular fluorescence
The 14th International Conference on Luminescence:ICL05 2005(Jul. 27)
Presenter:R. Nakamura; N. Hamada; H. Ichida; F. Tokunaga; Y. Kanematsu

27aPS-87 Evaluation of the protein's interaction I
Meeting abstracts of the Physical Society of Japan 2005(Mar. 27)
Presenter:Soda K; Matsumoto K; Hamada N; Ichida H; Nakamura R; Kanematsu Y; Tokunaga F

27aPS-88 Evaluation of the protein's interaction
Meeting abstracts of the Physical Society of Japan 2005(Mar. 27)
Presenter:Hamada N; Soda K; Matsumoto K; Ichida H; Nakamura R; Kanematsu Y; Tokunaga F; Mori H

27aPS-100 Time-gated excitation-emission spectroscopy to evaluate extracellular matrix
Meeting abstracts of the Physical Society of Japan 2005(Mar. 27)
Presenter:Nakamura Ryosuke; Hamada Norio; Ichida Hideki; Kanematsu Yasuo; Tokunaga Fumio

24pXQ-8 Photoluminescence dynamics of exciton-exciton scatterng processes in Cul thin films
Meeting abstracts of the Physical Society of Japan 2005(Mar. 24)
Presenter:Ichida H; Shimomura T; Mizoguchi K; Kim D; Kanematsu Y; Nakayama M

23p-ZR-13
第52回応用物理学関係連合講演会 2005(Mar. 23)
Presenter:市田秀樹; 徳野剛大; 小泉淳; 竹田美和; 兼松泰男; 藤原康文

2P263 Analysis of the recovery process from M intermediate to dark state in the photocycle of analogue PYP by transient absorption spectroscopy
Seibutsu Butsuri 2004(Dec. 14)
Presenter:Soda K; Hamada N; Ichida H; Nakamura R; Matsumoto K; Kanematsu Y; Tokunaga F

2P264 Detection of conformational change from dark state to M intermediate in a Photoactive Yellow Protein with hydrophobic fluorescent probes
Seibutsu Butsuri 2004(Dec. 14)
Presenter:Matsumoto K; Hamada N; Ichida H; Nakamura R; Kanematsu Y; Tokunaga F

2P265 Analysis of fluorescence spectrum for photoreceptor protein by alteration of hydrogen bonding network
Seibutsu Butsuri 2004(Dec. 14)
Presenter:Hamada N; Nakamura R; Ichida H; Soda K; Matsumoto K; Kanematsu Y; Tokunaga F

14aPS-76 Observation of low-frequency modes in photoreceptor proteins by using a THz-time-domain-reflection spectroscopy
Meeting abstracts of the Physical Society of Japan 2004(Sep. 14)
Presenter:Ichida H; Yamada H; Hamada N; Nakamura R; Kanematsu Y; Tokunaga F

14aPS-77 Development of fluorescence probing technique through amino acid residue in protein
Meeting abstracts of the Physical Society of Japan 2004(Sep. 14)
Presenter:Hamada Norio; Ichida Hideki; Nakamura Ryosuke; Kanematsu Yasuo; Tokunaga Fumio

14aPS-78 Simultaneous acquisition of multidimensional spectroscopic elements Time-gated excitation-emission matrix
Meeting abstracts of the Physical Society of Japan 2004(Sep. 14)
Presenter:Nakamura Ryosuke; Hamada Norio; Ichida Hideki; Soda Koji; Matsumoto Kengo; Kanematsu Yasuo; Tokunaga Fumio

14aPS-79 The light-modification effect in a Photoactive Yellow Protein crystal
Meeting abstracts of the Physical Society of Japan 2004(Sep. 14)
Presenter:Matsumoto K; Ichida H; Hamada N; Nakamura R; Kanematsu Y; Tokunaga F

13pPSA-36 Dynamics of the photo luminescence due to the exciton-exciton scattering in a CuI thin film
Meeting abstracts of the Physical Society of Japan 2004(Sep. 13)
Presenter:Shimomura T; Mizoguchi K; Kim D; Ichida H; Kanematsu Y; Nakayama M

13pPSA-84 Single-shot spectroscopy by using a ultrafast optical spectrogram scope
Meeting abstracts of the Physical Society of Japan 2004(Sep. 13)
Presenter:Ichida H; Ohnishi T; Tanimura K; Kanematsu Y; Konishi T

Ultrafast Coherent Vibrational Motion of Photoactive Yellow Protein Molecules
The 5th International Conference on Biological Physics: ICBP2004 2004(Aug. 23)
Presenter:Y. Kanematsu; R. Nakamura; N. Hamada; H. Ichida; F. Tokunaga

THz-time-domain-reflection spectroscopy of D96N bacteriorhodopsin
The 5th International Conference on Biological Physics: ICBP2004 2004(Aug. 23)
Presenter:H. Ichida; H. Yoshitomi; N. Hamada; R. Nakamura; F. Tokunaga; Y. Kanematsu

Entire view of coherent oscillations in ultrafast fluorescence for photoactive yellow protein
14th International Conference on Ultrafast Phenomena 2004(Jul. 29)
Presenter:R. Nakamura; N. Hamada; H. Ichida; Y. Kanematsu; F. Tokunaga

30aPS-31 THz time-domain-reflectance-spectroscopy of photoreceptor proteins
Meeting abstracts of the Physical Society of Japan 2004(Mar. 30)
Presenter:Yoshitomi H; Ichida H; Hamada N; Kumauchi M; Nakamura R; Kanematsu Y; Tokunaga F

29pPSB-22 Optical properties of a Crystalline Photoactive Yellow Protein
Meeting abstracts of the Physical Society of Japan 2004(Mar. 29)
Presenter:Ichida H; Hamada N; Nakamura R; Kanematsu Y; Tokunaga F

29pPSB-24 Development of new probe method of protein
Meeting abstracts of the Physical Society of Japan 2004(Mar. 29)
Presenter:Matsumoto Kengo; Hamada Norio; Nakamura Ryosuke; Ichida Hideki; Kanematsu Yasuo; Tokunaga Fumio

29pPSB-25 The Research for the photoreaction of photoactive yellow protein by fluorescence measurement
Meeting abstracts of the Physical Society of Japan 2004(Mar. 29)
Presenter:Soda Koji; Hamada Norio; Nakamura Ryosuke; Ichida Hideki; Kanematsu Yasuo; Tokunaga Fumio

29pPSB-27 Analysis of fluorescence spectrum for photoreceptor protein by alteration of hydrogen bonding network
Meeting abstracts of the Physical Society of Japan 2004(Mar. 29)
Presenter:Hamada Norio; Nakamura Ryosuke; Ichida Hideki; Soda Koji; Matsumoto Kengo; Yoshitomi Hirosi; Yamada Hirosi; Kanematsu Yasuo; Tokunaga Fumio

29pPSB-35 Research by fluorescence measurement on photoactive yellow protein with halogenated chromophore analogues
Meeting abstracts of the Physical Society of Japan 2004(Mar. 29)
Presenter:Yamada Hiroshi; Kumauchi Masato; Hamada Norio; Zheng Xiang-Guo; Park Il Ho; Nakamura Ryosuke; Ichida Hideki; Kanematsu Yasuo; Yoshihara Kazuo; Tokunaga Fumio

29pPSB-29 Ultrafast dynamics of photoreceptor proteins
Meeting abstracts of the Physical Society of Japan 2004(Mar. 03)
Presenter:Nakamura Ryosuke; Hamada Norio; Ichida Hideki; Soda Koji; Matsumoto Kengo; Kanematsu Yasuo; Tokunaga Fumio

The Optical Property of Bacteriorhodopsin : part I
Meeting abstracts of the Physical Society of Japan 2003(Sep. 23)
Presenter:Nakamura R; Hamada N; Ichida H; Kanematsu Y; Tokunaga F

The optical property of bacteriorhodopsin : part II
Meeting abstracts of the Physical Society of Japan 2003(Sep. 23)
Presenter:Hamada N; Nakamura R; Ichida H; Kanematsu Y; Tokunaga F

Sub-100fs time-resolved fluorescence spectroscopy by using the optical Kerr-gate technique
Meeting abstracts of the Physical Society of Japan 2003(Sep. 22)
Presenter:Ichida H; Nakamura R; Hamada N; Kanematsu Y

Bose-Einstein Statistics Behaviors of Exciton-Biexciton Photoluminescence Decay Processes in a GaAs/AlAs Type-II Superlattice
The 11th International Conferenceon Modulated Semiconductor Structures 2003(Jul. 14)
Presenter:M. Nakayama; H. Ichida

The Flourecence Spectrum Analysis of Photoactive Yellow Protein
Meeting abstracts of the Physical Society of Japan 2003(Mar. 29)
Presenter:Soda Koji; Hamada Norio; Nakamura Ryosuke; Ichida Hideki; Kanematu Yasuo; Tokunaga Fumio

Control of Bose-Einstein-statistics behavior of the exciton-biexciton system in a GaAs/AlAs type-II superlattice
5th International Conference on Excitonic Processes in Condensed Matter: EXCON'02 2002(Jul. 25)
Presenter:H. Ichida; M. Nakayama

24pWE-8 Control of Bose-Einstein statistics of the exciton-biexciton system in GaAs/AIAs type-H superlattices
Meeting abstracts of the Physical Society of Japan 2002(Mar. 24)
Presenter:Ichida H; Nakayama M

Interface effects on the Stark-ladder photoluminescence in a GaAS/AlAs type-II superlattice
Meeting abstracts of the Physical Society of Japan 2001(Sep. 19)
Presenter:Ichida H; Fukuda K; Nakayama M; Domoto C; Aida T

Bose-Einstein statistics of the exciton-biexciton system in GaAs/AlAs type-II superlattices (II)
Meeting abstracts of the Physical Society of Japan 2001(Sep. 18)
Presenter:Ichida H; Nakayama M

Boson characteristics of the exciton-biexciton system in a GaAs/AlAs type-II superlattice
International Conference on Dynamical Processes in Excited States of Solids: DPC'01 2001(Jul. 04)
Presenter:H. Ichida; M. Nakayama

Photoluminescence from the miniband edge of GaAs/AlAs superlattices
Meeting abstracts of the Physical Society of Japan 2001(Mar. 28)
Presenter:Yamamoto R; Ichida H; Mizoguchi K; Nakayama M

Bose-Einstein statistics of the exciton-biexciton system in GaAs/AlAs type-II superlattices
Meeting abstracts of the Physical Society of Japan 2001(Mar. 28)
Presenter:Ichida H; Nakayama M

Anomalous distribution of exciton-biexciton system in GaAs/AlAs type-II superlattices
Meeting abstracts of the Physical Society of Japan 2000(Sep. 23)
Presenter:Ichida H; Nakayama M

Transition from biexcitons to electron-hole plasma in photoluminescence properties of a GaAs/AlAs multiple-quantum-well structure
4th International Conference on Excitonic Processes in Condensed Matter EXCON'00 2000(Aug. 22)
Presenter:H. Ichida; K. Tsuji; K. Mizoguchi; H. Nishimura; M. Nakayama

Photoluminescence properties of GaAs/AlAs type-I superlattices under intense excitation conditions
Meeting abstracts of the Physical Society of Japan 2000(Mar. 24)
Presenter:Tsuji K; Ichida H; Mizoguchi K; Nakayama M; Nishimura H

25aC-10 Photoluminescence of the type-I electron-hole plasma in GaAs/AlAs type-II superlattices
Meeting abstracts of the Physical Society of Japan 1999(Sep. 25)
Presenter:Ichida H; Nakayama M; Nishimura H

Stimulated emission from exciton-exciton scattering in CuBr thin films
Int. Conf. on Luminescence and Optical Spectroscopy of Condensed Matter: ICL99 1999(Aug. 26)
Presenter:H. Ichida; M. Nakayama; H. Nishimura

31p-ZH-6 Photoluminescence Properties of GaAs/AlAs Type-II Superlattices
Meeting abstracts of the Physical Society of Japan 1999(Mar. 31)
Presenter:Ichida H; Nakayama M; Nishimura H

Photoluminescence of Biexcitons and Bound Biexcitons from CuCl Thin Films
The third international conference on excitonic processes in condensed matter: EXCON ’98 1998(Nov. 04)
Presenter:H. Ichida; D. Kim; M. Nakayama; H. Nishimura

Epitaxy effects on excitons in CuI thin films
The third international conference on excitonic processes in condensed matter: EXCON ’98 1998(Nov. 04)
Presenter:D. Kim; I. Tanaka; O. Kojima; H. Ichida; M. Nakayama; H. Nishimura

Photoluminescence Properties of GaAs/AlAs Type-II Superlattices under High-Density Excitation Conditions
Meeting abstracts of the Physical Society of Japan 1998(Sep. 27)
Presenter:NAKAYAMA M; KUMAMOTO Y; ICHIDA H; NISHIMURA H

Bound-biexciton photoluminescence in CuCl thin films grown by vacuum deposition
Meeting abstracts of the Physical Society of Japan 1998(Sep. 27)
Presenter:ICHIDA H; KIM D; NAKAYAMA M; NISHIMURA H

Photoluminescence Properties of CuBr-CuCl Alloy Thin Films Grown by Vacuum Deposition under Intense Excitations Conditions
Meeting abstracts of the Physical Society of Japan 1998(Apr. 02)
Presenter:ICHIDA H; KIM D; NAKAYAMA M; NISHIMURA H

Crystal Structures and Optical Properties of CuI Thin Films
Meeting abstracts of the Physical Society of Japan 1998(Mar. 31)
Presenter:KOJIMA O; TANAKA I; ICHIDA H; KIM D; NAKAYAMA M; NISHIMURA H

8a-J-10 Photoluminescence properties of CuCl thin films under high excitation conditions
Meeting abstracts of the Physical Society of Japan 1997(Sep. 08)
Presenter:Ichida H; Kim T; Nakayama M; Nishimura H

30p-YB-13 Photoluminescence Properties of CuBr Thin Films under high excitation conditions
Meeting abstracts of the Physical Society of Japan 1997(Mar. 30)
Presenter:Nakayama M; Ichida H; Hamasaki K; Nishimura H

MISC
The Safety Monitoring System using Acoustic Area Scanning Technology
日本文理大学紀要 = Bulletin of Nippon Bunri University,49(1):87-96 2021(Mar.)
Author:福島学; 大里一矢; 山下涼介; 樋口幸; 市田秀樹; 石井秀樹; 森竹隆広

Creating Mechanisms to Make the Best Use of Design in Society, and the Challenges Involved ; Case studies of Happiness Long Life Open-innovation Workshop
大分県立芸術文化短期大学研究紀要 = Bulletin of Oita prefectural College of Arts and Culture,(57):159-172 2020(Mar. 13)
Author:松本康史; 市田秀樹; 森淳一; 影山隆之; 濱中良志; 伊東朋子
Abstract:超高齢・人口減少社会を背景に、介護・福祉現場に焦点を合わせ、デザインや科学技術を地域社会に活かす方法の確立に向けたワークショッフ群の試行と検討を行った。介護・福祉の現場において必要とされる「モノ」について、多様な専門家や研究者、医療関係者、学生、企業、一般市民など様々なセクターの参加者が集まり、それぞれの専門的な立場からの対話を通したモノづくりワークショップを実施し、その成果を外部に向けた発表や、インターネットなどのメディアを通した公開を介して社会に還元していき、地域社会への波及効果をねらった。本稿では、それらのワークショップ群の手法とその結果について報告する。Against the backdrop of an aging society and declining population, we focused on nursing care and welfare on the ground, and conducted and examined trial workshops to establish ways for utilizing design and science and technology in the local community. We implemented workshops on manufacturing where participants from various sectors including a variety of experts, researchers, medical professionals, students, companies and the general public gathered and held a dialogue about "things" that are important in nursing care and welfare sites from their respective professional points of view. The aim was to create a ripple effect on the local community by giving back the results to society through external presentations and disclosure to the public through media including the Internet. In this paper, we report the methods and results of these workshops.

An Investigation on the Information from Acceleration Measurement for Welfare Monitoring System
日本文理大学紀要 = Bulletin of Nippon Bunri University,46(2):103-112 2018(Oct.)
Author:福島学; 市田秀樹; 大里一矢; 大塚柊; 高橋瑞希

要介護者のコミュニケーション支援システムの開発(その1)共通プラットフォームによる効率良いICT技術の利活用
日本文理大学紀要,45/46:11-16 2017(Nov.)
Author:福島学; 坪倉篤志; 濱田大助; 市田秀樹
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Challenge for a Sustainable Welfare Region Through "MoNoZuKuRi"
日本文理大学紀要 = Bulletin of Nippon Bunri University,45(2):181-190 2017(Nov.)
Author:福島学; 松永多苗子; 川崎敏之; 稲川直裕; 筑紫彰太; 室園昌彦; 岡崎覚万; 藤田浩輝; 市田秀樹; 長瀬翔斗; 高橋瑞希; 多賀絵理; 大里一矢; 大塚柊

要介護者のコミュニケーション支援システムの開発(その2)共通プラットフォームによる効率良いICT技術の利活用 (創立50周年記念号地域創生特集) -- (平成28年度地域志向プロジェクト研究)
日本文理大学紀要 = Bulletin of Nippon Bunri University,45(2):35-40 2017(Nov.)
Author:福島学; 坪倉篤志; 濱田大助; 松永多苗子; 市田秀樹

Photoluminescence properties of CuInS₂ quantum dots prepared by a hydrothermal method
光物性研究会論文集,28th 2017
Author:上東洋太; 飯田和貴; LEE Y-S.; 渡辺太一; 市田秀樹; KIM D.

An experiment of Integration and Utilization for Research Results using LabVIEW
日本文理大学紀要 = Bulletin of Nippon Bunri University,44(2):99-108 2016(Oct.)
Author:福島学; 鵜飼拓也; 島袋倫; 米川修平; 牧佑樹; 蓑輪佑樹; 清水真大; 伊妻拓哉; 梶原百香; 田中大貴; 市田秀樹

地域企業求人動画制作を通した地域創成人材の育成 : 日本文理大学COC事業による"おおいた,つくりびと"プロジェクト
九州地区大学教育研究協議会議事録,65:171-174 2016(Sep. 02)
Author:市田秀樹; 鈴木照男; 小牧渉; 泉丙完; 吉村充功

「適正技術教育」への新たなアプローチに向けて : 「Design for Life―地域が変わるものづくり」プロジェクトを手掛かりに
Communication-Design 特別号,1:86-93 2016(Mar.)
Author:辻田俊哉; 市田秀樹; 津田和俊; 敦賀和外; 中内政貴; 松行輝昌

水熱合成法によるZnS‐CuInS₂混晶ナノ粒子の作製
光物性研究会論文集,27th:83‐86 2016
Author:中谷泰輔; 市田秀樹; 飯田和貴; BU H; KIM D

10aPS-33 Temperature dependence of optical properties of CdTe quantum dots prepared by a colloidal method
Meeting abstracts of the Physical Society of Japan,69(2):543-543 2014(Aug. 22)
Author:Watanabe T.; Ichida H.; Takahashi K.; Shimura K.; Nakayama M.; Kim D.

27aCD-14 Thickness dependence of photoluminescence decay time of exciton-exciton scattering in ZnO thin films
Meeting abstracts of the Physical Society of Japan,69(1):727-727 2014(Mar. 05)
Author:Wakaiki S.; Ichida H.; Bamba M.; Kawase T.; Kawakami M.; Mizoguchi K.; Kim D.; Nakayama M.; Kanematsu Y.

28pEJ-13 Thickness dependence of photoluminescence decay time of exciton-exciton scattering in ZnO thin films
Meeting abstracts of the Physical Society of Japan,68(1):827-827 2013(Mar. 26)
Author:Wakaiki S.; Ichida H.; Kawase T.; Kawakami M.; Mizoguchi K.; Kim D.; Nakayama M.; Kanematsu Y.

18pHB-8 Polariton lasing in a CuBr microcavity
Meeting abstracts of the Physical Society of Japan,67(2):674-674 2012(Aug. 24)
Author:Kawase T.; Kanatani Y.; Ichida H.; Wakaiki S.; Kim D.; Kanematsu Y.; Nakayama M.

18aPSB-28 Relaxation Process of Exciton-Biexciton luminescence in Organic-inorganic semiconductor (C_4H_9NH_3)_2PbBr_4
Meeting abstracts of the Physical Society of Japan,67(2):665-665 2012(Aug. 24)
Author:Yamamoto Y.; Oohata G.; Mizoguchi K.; Ichida H.; Kanematsu Y.

有機・無機複合半導体(C₄H₉NH₃)₂PbBr₄における強励起発光スペクトルの観測と解析
光物性研究会論文集,23rd:97-100 2012
Author:山本康男; 大畠悟郎; 溝口幸司; 市田秀樹; 兼松泰男

励起子共鳴及びバンド間励起における半導体PbI₂の高密度励起発光ダイナミクス
光物性研究会論文集,21st:238-241 2010
Author:安藤光健; 片山郁文; 市田秀樹; 兼松泰男; 武田淳

KI:Ag^-の発光ダイナミクス
光物性研究会論文集,20th:29-32 2009
Author:平山景太; 河相武利; 市田秀樹; 兼松泰男; 溝口幸司

CuI薄膜における励起子―励起子散乱発光ダイナミクスの励起エネルギー依存性
光物性研究会論文集,18th:275-278 2007
Author:市田秀樹; 溝口幸司; KIM D; 兼松泰男; 中山正昭

光カーゲート法を用いたZnO薄膜の時間分解発光スペクトル:励起エネルギー依存性
光物性研究会論文集,17th:365-368 2006
Author:市田秀樹; 若生周治; 溝口幸司; KIM D; 兼松泰男; 中山正昭

光カーゲート法を用いたZnO薄膜の時間分解発光スペクトル:励起強度依存性
光物性研究会論文集,17th:229-232 2006
Author:若生周治; 市田秀樹; 溝口幸司; KIM D; 兼松泰男; 中山正昭

CuI薄膜における励起子―励起子散乱発光ダイナミクスの温度依存性
光物性研究会論文集,16th:95-98 2005(Dec.)
Author:市田秀樹; 溝口幸司; KIM D; 兼松泰男; 中山正昭

CuI薄膜における励起子‐励起子散乱発光のダイナミクス
光物性研究会論文集,15th:89-92 2004(Dec.)
Author:市田秀樹; 下村剛哉; 溝口幸司; 兼松泰男; 中山正昭

ポンプ・プローブ過渡吸収スペクトルのシングルショットイメージング計測
バイオイメージング,13(3):107-108 2004(Oct. 15)
Author:小西毅; 伊東一良; 市田秀樹; 兼松泰男; 雙木満; 武山哲英; 永岡利之

Optical Kerr shutter for femtosecond time-resolved fluorescence spectroscopy of photoactive proteins
レーザー学会研究会報告 = Reports on the Topical meeting of the Laser Society of Japan,318:35-39 2003(Dec. 15)
Author:NAKAMURA Ryosuke; ICHIDA Hideki; HAMADA Norio; KANEMATSU Yasuo; TOKUNAGA Fumio

光受容蛋白質PYPの光学特性
光物性研究会論文集,14th:107-110 2003(Dec. 05)
Author:市田秀樹; 浜田格雄; 中村亮介; 曽田幸司; 吉富寛; 山田寛士; 兼松泰男; 徳永史生

24pWE-8 Control of Bose-Einstein statistics of the exciton-biexciton system in GaAs/AIAs type-H superlattices
Meeting abstracts of the Physical Society of Japan,57(1):624-624 2002(Mar. 01)
Author:Ichida H.; Nakayama M.

2段階励起法によるGaAs/AlAsタイプ‐II超格子における励起子‐励起子分子系のボース統計性の制御
光物性研究会論文集,12th:62-65 2001(Dec. 07)
Author:市田秀樹; 中山正昭

GaAs/AlAsタイプ-II超格子における励起子-励起子分子系の異常分布
光物性研究会論文集,11th:161-164 2000(Dec.)
Author:市田秀樹; 中山正昭

GaAs/AlAsタイプ‐II超格子におけるタイプ‐I電子・正孔プラズマ発光
光物性研究会論文集,10th:245-248 1999(Nov. 26)
Author:市田秀樹; 中山正昭; 西村仁

Thermal-strain-induced splitting of heavy- and light-hole exciton energies in Cul thin films grown by vacuum evaporation.(共著)
Phys. Rev. B,60(19):13879-13884 1999
Author:KIM D; NAKAYAMA M; KOJIMA O; TANAKA I; ICHIDA H; NAKANISHI T; NISHIMURA H

Observation of Bound Biexciton Photoluminescence in CuCl Thin Films
光物性研究会論文集,:13-16 1998(Nov.)
Author:市田秀樹; 金大貴; 中山正昭; 西村仁

GaAs/AlAsタイプ-II超格子の高密度励起状態における電子・正孔液滴形成
光物性研究会論文集,:169-172 1998(Nov.)
Author:市田秀樹; 中山正昭; 西村仁

p-3 Photoluminescence Properties of CuCl-CuBr Alloy Conditions Grown by Vacuum Deposition under Intense Excitation Condetions
物性研究,71(3):519 1998
Author:Ichida H; Kim D; Nakayama M; Nishimura H

真空蒸着CuCl薄膜の高密度励起状態における発光特性
光物性研究会論文集,:9-12 1997(Nov.)
Author:市田秀樹; 金大貴; 中山正昭; 西村仁

CuBr薄膜における強励起状態の発光特性(第42回物性若手夏の学校(1997年度))
物性研究,69(3):563 1997
Author:市田秀樹; 中山正昭; 濱崎賢太; 西村仁

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ICHIDA Hideki

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ICHIDA　Hideki