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TAISHI Toshinori

Academic OrganizationAcademic Assembly School of Science and Technology Institute of EngineeringTEL
Education and Research OrganizationFaculty of Engineering Electrical and Computer EngineeringFAX
PositionProfessorMail Address
Address4-17-1, Wakasato, Nagano 380-8553Web site


Research Field
Applied materials
Crystal engineering
Keywords:Crystal growth , Evaluation of crystalline defects , Silicon , Germanium , Oxide crystals
Current Subject
Study on polycrystalline SiC coating
Keywords:Silicon carbide , coating , 2019-2021
Crystal growth of beta-gallium oxide
Keywords:Gallium oxide , crystal growth , 2016-2021
Crystal growth of complete solid solution materials
Keywords:Complete solid solution , crystal growth , 2013-2018
Solution growth of silicon carbide
Keywords:Silicon carbide , Solution growth , 2012-2021
High quality germanium crystal growth
Keywords:Germanium , crystal growth , dislocation , mechanical strength , 2006-2013
Oxide crystal growth by vertical Bridgman method
Keywords:Oxide crystals , crystal growth , vertical Bridgman , 2003-2006
Czochralski growth of silicon crystals and evaluation of crystalline defects
Keywords:Silicon , crystal growth , Czochralsk , dislocation , defects , 1998-2003
Academic Background
Graduate School
Research Career
Research Career


Books, Articles, etc.
Growth of (100), (010) and (001) b-Ga2O3 single crystals by vertical Bridgman method
J. Cryst. Growth,556:125990 2021(Feb. 15)
Author:E. Ohba, T. Kobayashi, T. Taishi, K. Hoshikawa

日本結晶成長学会誌,47(2):47-2-05 2020(Jul. 31)
Author:宇田聡, 川瀬智博, 太子敏則

日本結晶成長学会誌,47(2):47-2-01 2020(Jul. 31)

Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth
Applied Surface Science,513:145798 2020(Feb. 15)
Author:K. Hyun, S.J. Kim, T. Taishi

Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth
2020(Feb. 15)
Author:K. Hyun, S.J. Kim, T. Taishi

The effect of Al addition to a Cr solvent without molten Si on the surface morphology in a solution growth of SiC
Japanese Journal of Applied Physics,59:025504(1-6) 2020(Jan. 09)
Author:K. Suzuki, T. Taishi

The effect of the structure of seed attachment on polytype and morphology in solution growth of SiC by TSSG method
Mater. Sci. Forum,924:35-38 2018(Jun.)
Author:K. Suzuki, K. Hyun, T. Taishi

Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M=Transition Metals) Solvents for the Solution Growth of SiC
Mater. Sci. Forum,924:43-46 2018(Jun.)
Author:K. Hyun, T. Taishi, K. Teshima

Solution growth of SiC from the crucible bottom with dipping under unsaturation state of carbon in solvent
Mater. Sci. Forum,924:51-54 2018(Jun.)
Author:T. Taishi,M. Takahashi,N. Tsuchimoto,K. Suzuki, K. Hyun

日本結晶成長学会誌,43:23-31 2016(Oct.)

Anisotropy of ionic conduction in single-crystal LixLa(1%x)/3NbO3 solid electrolyte grown by directional solidification
Jpn. J. Appl. Phys.,55:090306-1-090306-3 2016(Sep.)
Author:Y. Fujiwara, T. Taishi, K. Hoshikawa, K. Kohama, H. Iba

The Growth of Potassium Tantalate Niobate (KTaxNb1-xO3) Single Crystal by Vertical Bridgman Method
Additive Manufacturing and Strategic Technologies in Advanced Ceramics: Ceramic Transactions,258:105-112 2016(Aug.)
Author:T. Taishi, K. Hosokawa, K. Hoshikawa, T. Kojima, J. Osada, M. Sasaura, Y. Furukawa, T. Komatsu

Colony structure in Ce-doped Al2O3/YAG eutectic systems grown by vertical Bridgman technique
J. Cryst. Growth,448:1-5 2016(Jul.)
Author:S. Yamada, M. Yoshimura, S. Sakata, T. Taishi, K. Hoshikawa

Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor
Author:Htay, MT; Mandokoro, T; Seki, H; Sakaizawa, T; Momose, N; Taishi, T; Hashimoto, Y; Ito, K

The growth of Al2O3/YAG:Ce melt growth composite by the vertical Bridgman technique using an a-axis Al2O3 seed
J. Cryst. Growth,427:16-20 2015
Author:Masafumi Yoshimura, Shin-ichi Sakata, Seiya Yamada, Toshinori Taishi, Keigo Hoshikawa

Vertical Bridgman growth of sapphire crystals, with thin-neck formation process
JOURNAL OF CRYSTAL GROWTH,401:146-149 2014(Sep. 01)
Author:Hoshikawa, K; Taishi, T; Ohba, E; Miyagawa, C; Kobayashi, T; Yanagisawa, J; Shinozuka, M

Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals
J. Cryst. Growth,401:388-391 2014(Sep. 01)
Author:T.Taishi, T.Kobayashi, M.Shinozuka, E.Ohba, C.Miyagawa, K.Hoshikawa

Constitutional supercooling in heavily As-doped Czochralski Si crystal growth
J. Cryst. Growth,393:42-44 2014(May 01)
Author:T. Taishi, Y. Ohno, I. Yonenaga

Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation
J. Cryst. Growth,402:83-89 2014
Author:C. Miyagawa, T. Kobayashi, T. Taishi, K. Hoshikawa

Growth of potassium tantalate (KTaO3) crystalsby directional solidification
J. Cryst. Growth,380:39-42 2013(Oct. 01)
Author:Toshinori Taishi, Takayuki Takenaka,Kazuya Hosokawa,Noriko Bamba,Keigo Hoshikawa

Demonstration of crack-free c-axis sapphire crystal growth using the vertical Bridgman method
J. Cryst. Growth,372:95-99 2013
Author:Chihiro Miyagawa, Takumi Kobayashi, Toshinori Taishi, Keigo Hoshikawa

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3
J. Cryst. Growth,360:47-51 2012(Dec. 01)
Author:T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa and I.Yonenaga

Growth and characterization of germanium crystals from B2O3-coverd melt
,2012 3CG Collaborative Conference on Crystal Growth 2012(Dec.)
Author:T. Taishi

Fabrication of flower-shaped Bi(2)O(3) superstructure by a facile template-free process
APPLIED SURFACE SCIENCE,257(15):6577-6582 2011(May)
Author:Zhang, Li; Hashimoto, Yoshio; Taishi, Toshinori; Nakamura, Isao; Ni, Qing-Qing

Oxygen doped Ge crystals Czochralski-grown from the B2O3-fully-covered melt
Miroelectro. Eng.,88:496-498 2011(Feb.)
Author:T. Taishi, Y. Ohno, I. Yonenaga

Mild hydrothermal treatment to prepare highly dispersed multi-walled carbon nanotubes
APPLIED SURFACE SCIENCE,257(6):1845-1849 2011(Jan.)
Author:Zhang, Li; Hashimoto, Yoshio; Taishi, Toshinori; Ni, Qing-Qing

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities
J. Cryst. Growth,312:2783-2787 2010(Jun.)
Author:T. Taishi, H. Ise, Y. Murao, T. Osawa, M. Suezawa, Y. Tokumoto, Y. Ohno, K. Hoshikawa and I. Yonenaga

まてりあ,48:625 2009(Dec.)
Author:大野裕, 太子敏則, 徳本有紀, 米永一郎

Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth
Physica B,404:4612-4615 2009(Dec.)
Author:T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga

Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt
J. Cryst Growth,311:4615-4618 2009(Jun.)
Author:T. Taishi, Y. Ohno, I. Yonenaga

Generation and suppression of misfit dislocations at the seed/crystal interface in Si bulk crystal growth
Phys. Stat. Sol. (C),6:1886-1891 2009(Jun.)
Author:T. Taishi, K. Hoshikawa, Y. Ohno and I. Yonenaga

Single cyrystal growth of langataite (La3Ta0.5Ga5.5O14) by vertical Bridgman (VB) method along [21-1-0]in air and an Ar atmosphere
J. Cryst Growth,311:205-208 2008(Dec.)
Author:T. Taishi, N. Bamba, K. Hoshikawa and I. Yonenaga

High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors
J. Appl. Phys.,103:093502(1-4) 2008(May)
Author:I. Yonenaga, H. Koizumi, Y. Ohno and T. Taishi

日本結晶成長学会誌,34:17-22 2008(Apr.)
Author:干川圭吾, 太子敏則, 黄新明

まてりあ,46:823 2007(Dec.)

Si multicrystals grown by the Czochralski method with multi-seeds
J. Cryst. Growth,307:466-471 2007(Jul.)
Author:T. Hoshikawa, T. Taishi, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa

Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime
J. Cryst. Growth,306:452-457 2007(May)
Author:T. Taishi, T. Hoshikawa, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa

Single-crystal growth of langasite (La3Ga5SiO14) by the vertical Bridgman (VB) method in air and in an Ar atmosphere
J. Cryst. Growth,304:4-6 2007(Mar.)
Author:T. Taishi, T. Hayashi, T. Fukami, K. Hoshikawa and I. Yonenaga

Solution growth of SiC -Unique approach by vertical-Bridgman-like technique-
Third International Workshop on Advanced Functional Nanomaterials 2015(Dec.)
Presenter:Toshinori Taishi

Growth of potassium tantalate niobate (KTaxNb1-xO3: KTN) crystals by the vertical Bridgman (VB) method
11th International Conference on Ceramic Materials and Components for Energy and Environmental Applications 2015
Presenter:Toshinori Taishi, Kazuya Hosokawa, Keigo Hoshikawa, Takahiro Kojima, Junya Osada, Masahiro Sasaura, Yasunori Furukawa, Takayuki Komatsu

SiC溶液成長 ~溶剤添加効果と炭素の溶解・輸送・成長のバランス~
応用物理学会第1回先進パワー半導体分科会 2014(Nov. 20)

まてりあ 50 10 431 2011(May)

Czochralski germanium crystal growth with low dislocation density and oxygen impurities
TheForum on the Science and Technology of Silicon Materials 2010 2010(Nov.)
Presenter:T. Taishi