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TAISHI Toshinori

Academic OrganizationAcademic Assembly School of Science and Technology Institute of EngineeringTEL
Education and Research OrganizationFaculty of Engineering Electrical and Computer EngineeringFAX
PositionProfessorMail Address
Address4-17-1, Wakasato, Nagano 380-8553Web site


Research Field
Applied materials
Crystal engineering
Keywords:Crystal growth , Evaluation of crystalline defects , Silicon , Germanium , Oxide crystals
Current Subject
Crystal growth of beta-gallium oxide
Keywords:Gallium oxide , crystal growth , 2016-2018
Crystal growth of complete solid solution materials
Keywords:Complete solid solution , crystal growth , 2013-2018
Solution growth of silicon carbide
Keywords:Silicon carbide , Solution growth , 2012-2018
High quality germanium crystal growth
Keywords:Germanium , crystal growth , dislocation , mechanical strength , 2006-2013
Oxide crystal growth by vertical Bridgman method
Keywords:Oxide crystals , crystal growth , vertical Bridgman , 2003-2006
Czochralski growth of silicon crystals and evaluation of crystalline defects
Keywords:Silicon , crystal growth , Czochralsk , dislocation , defects , 1998-2003
Academic Background
Graduate School
Research Career
Research Career


Books, Articles, etc.
日本結晶成長学会誌,47(2):47-2-01-09 2020(Jul. 31)

Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth
2020(Feb. 15)
Author:K. Hyun, S.J. Kim, T. Taishi

The effect of Al addition to a Cr solvent without molten Si on the surface morphology in a solution growth of SiC
Japanese Journal of Applied Physics,59:025504(1-6) 2020(Jan. 09)
Author:K. Suzuki, T. Taishi

The effect of the structure of seed attachment on polytype and morphology in solution growth of SiC by TSSG method
Mater. Sci. Forum,924:35-38 2018(Jun.)
Author:K. Suzuki, K. Hyun, T. Taishi

Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M=Transition Metals) Solvents for the Solution Growth of SiC
Mater. Sci. Forum,924:43-46 2018(Jun.)
Author:K. Hyun, T. Taishi, K. Teshima

Solution growth of SiC from the crucible bottom with dipping under unsaturation state of carbon in solvent
Mater. Sci. Forum,924:51-54 2018(Jun.)
Author:T. Taishi,M. Takahashi,N. Tsuchimoto,K. Suzuki, K. Hyun

日本結晶成長学会誌,43:23-31 2016(Oct.)

Anisotropy of ionic conduction in single-crystal LixLa(1%x)/3NbO3 solid electrolyte grown by directional solidification
Jpn. J. Appl. Phys.,55:090306-1-3 2016(Sep.)
Author:Y. Fujiwara, T. Taishi, K. Hoshikawa, K. Kohama, H. Iba

The Growth of Potassium Tantalate Niobate (KTaxNb1-xO3) Single Crystal by Vertical Bridgman Method
Additive Manufacturing and Strategic Technologies in Advanced Ceramics: Ceramic Transactions,258:105-112 2016(Aug.)
Author:T. Taishi, K. Hosokawa, K. Hoshikawa, T. Kojima, J. Osada, M. Sasaura, Y. Furukawa, T. Komatsu

Colony structure in Ce-doped Al2O3/YAG eutectic systems grown by vertical Bridgman technique
J. Cryst. Growth,448:1-5 2016(Jul.)
Author:S. Yamada, M. Yoshimura, S. Sakata, T. Taishi, K. Hoshikawa

Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor
Author:Htay, MT; Mandokoro, T; Seki, H; Sakaizawa, T; Momose, N; Taishi, T; Hashimoto, Y; Ito, K

The growth of Al2O3/YAG:Ce melt growth composite by the vertical Bridgman technique using an a-axis Al2O3 seed
J. Cryst. Growth,427:16-20 2015
Author:Masafumi Yoshimura, Shin-ichi Sakata, Seiya Yamada, Toshinori Taishi, Keigo Hoshikawa

Vertical Bridgman growth of sapphire crystals, with thin-neck formation process
JOURNAL OF CRYSTAL GROWTH,401:146-149 2014(Sep. 01)
Author:Hoshikawa, K; Taishi, T; Ohba, E; Miyagawa, C; Kobayashi, T; Yanagisawa, J; Shinozuka, M

Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals
J. Cryst. Growth,401:388-391 2014(Sep. 01)
Author:T.Taishi, T.Kobayashi, M.Shinozuka, E.Ohba, C.Miyagawa, K.Hoshikawa

Constitutional supercooling in heavily As-doped Czochralski Si crystal growth
J. Cryst. Growth,393:42-44 2014(May 01)
Author:T. Taishi, Y. Ohno, I. Yonenaga

Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation
J. Cryst. Growth,402:83-89 2014
Author:C. Miyagawa, T. Kobayashi, T. Taishi, K. Hoshikawa

Growth of potassium tantalate (KTaO3) crystalsby directional solidification
J. Cryst. Growth,380:39-42 2013(Oct. 01)
Author:Toshinori Taishi, Takayuki Takenaka,Kazuya Hosokawa,Noriko Bamba,Keigo Hoshikawa

Demonstration of crack-free c-axis sapphire crystal growth using the vertical Bridgman method
J. Cryst. Growth,372:95-99 2013
Author:Chihiro Miyagawa, Takumi Kobayashi, Toshinori Taishi, Keigo Hoshikawa

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3
J. Cryst. Growth,360:47-51 2012(Dec. 01)
Author:T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa and I.Yonenaga

Growth and characterization of germanium crystals from B2O3-coverd melt
,2012 3CG Collaborative Conference on Crystal Growth 2012(Dec.)
Author:T. Taishi

Fabrication of flower-shaped Bi(2)O(3) superstructure by a facile template-free process
APPLIED SURFACE SCIENCE,257(15):6577-6582 2011(May)
Author:Zhang, Li; Hashimoto, Yoshio; Taishi, Toshinori; Nakamura, Isao; Ni, Qing-Qing

Oxygen doped Ge crystals Czochralski-grown from the B2O3-fully-covered melt
Miroelectro. Eng.,88:496-498 2011(Feb.)
Author:T. Taishi, Y. Ohno, I. Yonenaga

Mild hydrothermal treatment to prepare highly dispersed multi-walled carbon nanotubes
APPLIED SURFACE SCIENCE,257(6):1845-1849 2011(Jan.)
Author:Zhang, Li; Hashimoto, Yoshio; Taishi, Toshinori; Ni, Qing-Qing

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities
J. Cryst. Growth,312:2783-2787 2010(Jun.)
Author:T. Taishi, H. Ise, Y. Murao, T. Osawa, M. Suezawa, Y. Tokumoto, Y. Ohno, K. Hoshikawa and I. Yonenaga

まてりあ,48:625 2009(Dec.)
Author:大野裕, 太子敏則, 徳本有紀, 米永一郎

Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth
Physica B,404:4612-4615 2009(Dec.)
Author:T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga

Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt
J. Cryst Growth,311:4615-4618 2009(Jun.)
Author:T. Taishi, Y. Ohno, I. Yonenaga

Generation and suppression of misfit dislocations at the seed/crystal interface in Si bulk crystal growth
Phys. Stat. Sol. (C),6:1886-1891 2009(Jun.)
Author:T. Taishi, K. Hoshikawa, Y. Ohno and I. Yonenaga

Single cyrystal growth of langataite (La3Ta0.5Ga5.5O14) by vertical Bridgman (VB) method along [21-1-0]in air and an Ar atmosphere
J. Cryst Growth,311:205-208 2008(Dec.)
Author:T. Taishi, N. Bamba, K. Hoshikawa and I. Yonenaga

High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors
J. Appl. Phys.,103:093502(1-4) 2008(May)
Author:I. Yonenaga, H. Koizumi, Y. Ohno and T. Taishi

日本結晶成長学会誌,34:17-22 2008(Apr.)
Author:干川圭吾, 太子敏則, 黄新明

まてりあ,46:823 2007(Dec.)

Si multicrystals grown by the Czochralski method with multi-seeds
J. Cryst. Growth,307:466-471 2007(Jul.)
Author:T. Hoshikawa, T. Taishi, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa

Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime
J. Cryst. Growth,306:452-457 2007(May)
Author:T. Taishi, T. Hoshikawa, M. Yamatani, K. Shirakawa X. Huang, S. Uda and K. Hoshikawa

Single-crystal growth of langasite (La3Ga5SiO14) by the vertical Bridgman (VB) method in air and in an Ar atmosphere
J. Cryst. Growth,304:4-6 2007(Mar.)
Author:T. Taishi, T. Hayashi, T. Fukami, K. Hoshikawa and I. Yonenaga

Solution growth of SiC -Unique approach by vertical-Bridgman-like technique-
Third International Workshop on Advanced Functional Nanomaterials 2015(Dec.)
Author:Toshinori Taishi

Growth of potassium tantalate niobate (KTaxNb1-xO3: KTN) crystals by the vertical Bridgman (VB) method
11th International Conference on Ceramic Materials and Components for Energy and Environmental Applications 2015
Author:Toshinori Taishi, Kazuya Hosokawa, Keigo Hoshikawa, Takahiro Kojima, Junya Osada, Masahiro Sasaura, Yasunori Furukawa, Takayuki Komatsu

SiC溶液成長 ~溶剤添加効果と炭素の溶解・輸送・成長のバランス~
応用物理学会第1回先進パワー半導体分科会 2014(Nov. 20)

まてりあ , 50(10):431 2011(May)

Czochralski germanium crystal growth with low dislocation density and oxygen impurities
TheForum on the Science and Technology of Silicon Materials 2010 2010(Nov.)
Author:T. Taishi