URAKAMI Noriyuki
Academic Assembly School of Science and Technology Institute of Engineering
Faculty of Engineering Electrical and Computer Engineering
Associate Professor
Researcher Information
Field Of Study
Mail Address
- urakami★shinshu-u.ac.jp
Career
Educational Background
Research activity information
Paper
- Schottky barrier diode consisting of van der Waals heterojunction of MoS2 film and PtCoO2 contact
Urakami, Noriyuki; Fukai, Masaya; Hashimoto, Yoshio;
SOLID-STATE ELECTRONICS, 207, 108685, 2023
Lead, Corresponding
- Thermal chemical vapor deposition of layered carbon nitride films under a hydrogen gas atmosphere
Urakami, Noriyuki; Takashima, Kensuke; Shimizu, Masahiro; Hashimoto, Yoshio;
CrystEngComm, 25(5), 877-883, 2023
Lead, Corresponding - Fabrication of a layered gallium selenide photodetector array via oxygen plasma etching
Urakami, Noriyuki; Nakakura, Shinya; Hashimoto, Yoshio;
APPLIED PHYSICS EXPRESS, 16(5), 056503, 2023
Lead, Corresponding - Solid-source vapor growth and optoelectronic properties of arsenic-based layered group-IV monopnictides
Kagami, Shu; Urakami, Noriyuki; Suzuki, Yuichiro; Hashimoto, Yoshio;
CrystEngComm, 24(22), 4085-4092, 2022
Corresponding - Oxidation of tantalum disulfide (TaS2) films for gate dielectric and process design of two-dimensional field-effect device
Takeuchi, Hayate; Urakami, Noriyuki; Hashimoto, Yoshio;
Nanotechnology, 33(37), 375204, 2022
Corresponding - Electrical Properties in Ta2NiSe5 Film and van der Waals Heterojunction
Fukai, Masaya; Urakami, Noriyuki; Hashimoto, Yoshio;
COATINGS, 11(12), 1485, Dec. 2021
Corresponding - Demonstration of electronic devices in graphitic carbon nitride crystalline film
Urakami, Noriyuki; Ogihara, Kohei; Futamura, Hatsuki; Takashima, Kensuke; Hashimoto, Yoshio;
AIP Advances, 11(7), Jul. 2021
Lead, Corresponding - Solid-source vapor growth of rectangular germanium arsenide (GeAs) film
Suzuki, Yuichiro; Urakami, Noriyuki; Hashimoto, Yoshio;
Materials Letters, 283, Jan. 2021
Corresponding - Electronic transport and device application of crystalline graphitic carbon nitride film
Takashima, Kensuke; Urakami, Noriyuki; Hashimoto, Yoshio;
Materials Letters, 281, Dec. 2020
Corresponding - Photoluminescence of Layered Semiconductor Materials for Emission-Color Conversion of Blue Micro Light-Emitting Diode (mu LED)
Tsuboi, Yuma; Urakami, Noriyuki; Hashimoto, Yoshio;
COATINGS, 10(10), 985, Oct. 2020
Corresponding - Crystalline trigonal selenium flakes grown by vapor deposition and its photodetector application
Suzuki, Yuichiro; Doi, Fumiaki; Urakami, Noriyuki; Hashimoto, Yoshio;
Materials Letters, 275, 128207, Sep. 2020
Corresponding - Kinetics Study and Degradation Analysis through Raman Spectroscopy of Graphite as a Negative-Electrode Material for Potassium-Ion Batteries
Shimizu, Masahiro; Koya, Taro; Nakahigashi, Atsuhito; Urakami, Noriyuki; Yamakami, Tomohiko; Arai, Susumu;
JOURNAL OF PHYSICAL CHEMISTRY C, 124(24), 13008-13016, Jun. 2020 - Chemical Vapor Deposition of Boron-Incorporated Graphitic Carbon Nitride Film for Carbon-Based Wide Bandgap Semiconductor Materials
Urakami, Noriyuki; Kosaka, Maito; Hashimoto, Yoshio;
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 257(2), Feb. 2020
Lead, Corresponding - Direct growth of NbSe2 and TiSe2 thin flakes via deposited film selenization
Hachiya, Ren; Urakami, Noriyuki; Hashimoto, Yoshio;
Japanese Journal of Applied Physics, 59, 2020
Corresponding - Thermal chemical vapor deposition and luminescence property of graphitic carbon nitride film for carbon-based semiconductor systems
Urakami, Noriyuki; Kosaka, Maito; Hashimoto, Yoshio;
Japanese Journal of Applied Physics, 58(1), Jan. 2019
Lead, Corresponding - Temperature-dependent Raman spectroscopy of Cu2Sn1-xGexS3 thin films
Okamura, Takayoshi; Htay, Myo Than; Yamaguchi, Kohei; Urakami, Noriyuki; Momose, Noritaka; Ito, Kentaro; Hashimoto, Yoshio;
Japanese Journal of Applied Physics, 57(8), Aug. 2018 - Epitaxial growth of ReS2(001) thin film via deposited-Re sulfurization
Urakami, Noriyuki; Okuda, Tetsuya; Hashimoto, Yoshio;
Japanese Journal of Applied Physics, 57(2), Feb. 2018
Lead, Corresponding - Formation of graphitic carbon nitride and boron carbon nitride film on sapphire substrate
Kosaka, Maito; Urakami, Noriyuki; Hashimoto, Yoshio;
Japanese Journal of Applied Physics, 57(2), Feb. 2018
Corresponding - Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation
Urakami, Noriyuki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro;
Journal of Crystal Growth, 435, 19-23, 2016
Lead - III-V-N Compounds for Multi-Junction Solar Cells on Si
Yamane, K (Yamane, Keisuke) ; Urakami, N (Urakami, Noriyuki) ; Sekiguchi, H (Sekiguchi, Hiroto) ; Wakahara, A (Wakahara, Akihiro)
2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2792-2796, Jun. 2014, Refereed - Growth of dilute BGaP alloys by molecular beam epitaxy
Urakami, N.; Fukami, F.; Sekiguchi, H.; Okada, H.; Wakahara, A.;
Journal of Crystal Growth, 378, 96-99, 2013
Lead - Annealing behavior on luminescence properties of self-assembled InGaAsN/GaP quantum dots
Urakami, N.; Umeno, K.; Furukawa, Y.; Fukami, F.; Mitsuyoshi, S.; Okada, H.; Yonezu, H.; Wakahara, A.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, 8(2), 263-265, Feb. 2011, Refereed
Lead - Analysis of quantum levels for self-assembled InGaAsN/GaP quantum dots
Fukami, F.; Umeno, K.; Furukawa, Y.; Urakami, N.; Mitsuyoshi, S.; Okada, H.; Yonezu, H.; Wakahara, A.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, 8(2), 322-324, Feb. 2011, Refereed - Electrical and luminescence properties of Mg-doped p-type GaPN grown by molecular beam epitaxy
Mitsuyoshi, S.; Umeno, K.; Furukawa, Y.; Urakami, N.; Wakahara, A.; Yonezu, H.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, 7(10), 2498-2501, Sep. 2010, Refereed - Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy
Umeno, K.; Furukawa, Y.; Urakami, N.; Noma, R.; Mitsuyoshi, S.; Wakahara, A.; Yonezu, H.;
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 42(10), 2772-2776, Sep. 2010 - Growth and luminescence characterization of dilute InPN alloys grown by molecular beam epitaxy
Umeno, K.; Furukawa, Y.; Urakami, N.; Mitsuyoshi, S.; Yonezu, H.; Wakahara, A.; Ishikawa, F.; Kondow, M.;
Journal of Vacuum Science & Technology B, 28(3), May 2010 - Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE
Umeno, K.; Furukawa, Y.; Urakami, N.; Mitsuyoshi, S.; Yonezu, H.; Wakahara, A.;
Journal of Crystal Growth, 312(2), 231-237, 2010
