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URAKAMI Noriyuki

Academic OrganizationAcademic Assembly School of Science and Technology Institute of EngineeringTEL
Education and Research OrganizationFaculty of Engineering Electrical and Computer EngineeringFAX
PositionAssistant ProfessorMail Addressurakami@shinshu-u.ac.jp
Address4-17-1, Wakasato, Nagano City 380-8553Web sitehttps://researchmap.jp/noriyuki-urakami/
https://publons.com/researcher/3226043/noriyuki-urakami

Profile

Research Field
electron/electronic material engineering
crystal engineering
Current Subject
Creation of carbon based compound semiconductor
Keywords:graphitic carbon nitride , 2016-
Fabrication and device application of layered materials
Keywords:Transition metal dichalcogenides , Group 13 monochalcogenides , Group 14 monopnictides , 2015-
Epitaxial growth of high quality dilute boride and dilute nitride alloys
Keywords:BGaP , InGaAsN , Surface nitridation , 2008-2014
Academic Societies
Academic Societies
Japan Society of Applied Physics
Academic Background
Graduate School
Toyohashi University of Technology , (Electrical and Electron Information Engineerign) , 2015

Research

Books, Articles, etc.
Articles
Solid-source vapor growth of rectangular germanium arsenide (GeAs) film
MATERIALS LETTERS,283 2021(Jan.)
Author:Suzuki, Yuichiro; Urakami, Noriyuki; Hashimoto, Yoshio;


Electronic transport and device application of crystalline graphitic carbon nitride film
MATERIALS LETTERS,281 2020(Dec.)
Author:Takashima, Kensuke; Urakami, Noriyuki; Hashimoto, Yoshio;


Photoluminescence of Layered Semiconductor Materials for Emission-Color Conversion of Blue Micro Light-Emitting Diode (mu LED)
COATINGS,10(10):985 2020(Oct.)
Author:Tsuboi, Yuma; Urakami, Noriyuki; Hashimoto, Yoshio;


Crystalline trigonal selenium flakes grown by vapor deposition and its photodetector application
MATERIALS LETTERS,275:128207 2020(Sep.)
Author:Suzuki, Yuichiro; Doi, Fumiaki; Urakami, Noriyuki; Hashimoto, Yoshio;


Kinetics Study and Degradation Analysis through Raman Spectroscopy of Graphite as a Negative-Electrode Material for Potassium-Ion Batteries
JOURNAL OF PHYSICAL CHEMISTRY C,124(24):13008-13016 2020(Jun.)
Author:Shimizu, Masahiro; Koya, Taro; Nakahigashi, Atsuhito; Urakami, Noriyuki; Yamakami, Tomohiko; Arai, Susumu;


Chemical Vapor Deposition of Boron-Incorporated Graphitic Carbon Nitride Film for Carbon-Based Wide Bandgap Semiconductor Materials
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,257(2) 2020(Feb.)
Author:Urakami, Noriyuki; Kosaka, Maito; Hashimoto, Yoshio;


Direct growth of NbSe2 and TiSe2 thin flakes via deposited film selenization
JAPANESE JOURNAL OF APPLIED PHYSICS,59 2020
Author:Hachiya, Ren; Urakami, Noriyuki; Hashimoto, Yoshio;


Thermal chemical vapor deposition and luminescence property of graphitic carbon nitride film for carbon-based semiconductor systems
JAPANESE JOURNAL OF APPLIED PHYSICS,58(1) 2019(Jan.)
Author:Urakami, Noriyuki; Kosaka, Maito; Hashimoto, Yoshio;


Temperature-dependent Raman spectroscopy of Cu2Sn1-xGexS3 thin films
JAPANESE JOURNAL OF APPLIED PHYSICS,57(8) 2018(Aug.)
Author:Okamura, Takayoshi; Htay, Myo Than; Yamaguchi, Kohei; Urakami, Noriyuki; Momose, Noritaka; Ito, Kentaro; Hashimoto, Yoshio;


Formation of graphitic carbon nitride and boron carbon nitride film on sapphire substrate
JAPANESE JOURNAL OF APPLIED PHYSICS,57(2) 2018(Feb.)
Author:Kosaka, Maito; Urakami, Noriyuki; Hashimoto, Yoshio;


Epitaxial growth of ReS2(001) thin film via deposited-Re sulfurization
JAPANESE JOURNAL OF APPLIED PHYSICS,57(2) 2018(Feb.)
Author:Urakami, Noriyuki; Okuda, Tetsuya; Hashimoto, Yoshio;


Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation
JOURNAL OF CRYSTAL GROWTH,435:19-23 2016
Author:Urakami, Noriyuki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro;


III-V-N Compounds for Multi-Junction Solar Cells on Si
2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC),:2792-2796 2014(Jun.)
Author:Yamane, K (Yamane, Keisuke) ; Urakami, N (Urakami, Noriyuki) ; Sekiguchi, H (Sekiguchi, Hiroto) ; Wakahara, A (Wakahara, Akihiro)


Growth of dilute BGaP alloys by molecular beam epitaxy
JOURNAL OF CRYSTAL GROWTH,378:96-99 2013
Author:Urakami, N.; Fukami, F.; Sekiguchi, H.; Okada, H.; Wakahara, A.;


Analysis of quantum levels for self-assembled InGaAsN/GaP quantum dots
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS,8(2):322-324 2011(Feb.)
Author:Fukami, F.; Umeno, K.; Furukawa, Y.; Urakami, N.; Mitsuyoshi, S.; Okada, H.; Yonezu, H.; Wakahara, A.


Annealing behavior on luminescence properties of self-assembled InGaAsN/GaP quantum dots
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS,8(2):263-265 2011(Feb.)
Author:Urakami, N.; Umeno, K.; Furukawa, Y.; Fukami, F.; Mitsuyoshi, S.; Okada, H.; Yonezu, H.; Wakahara, A.


Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,42(10):2772-2776 2010(Sep.)
Author:Umeno, K.; Furukawa, Y.; Urakami, N.; Noma, R.; Mitsuyoshi, S.; Wakahara, A.; Yonezu, H.;


Electrical and luminescence properties of Mg-doped p-type GaPN grown by molecular beam epitaxy
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS,7(10):2498-2501 2010(Sep.)
Author:Mitsuyoshi, S.; Umeno, K.; Furukawa, Y.; Urakami, N.; Wakahara, A.; Yonezu, H.


Growth and luminescence characterization of dilute InPN alloys grown by molecular beam epitaxy
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,28(3) 2010(May)
Author:Umeno, K.; Furukawa, Y.; Urakami, N.; Mitsuyoshi, S.; Yonezu, H.; Wakahara, A.; Ishikawa, F.; Kondow, M.;


Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE
JOURNAL OF CRYSTAL GROWTH,312(2):231-237 2010
Author:Umeno, K.; Furukawa, Y.; Urakami, N.; Mitsuyoshi, S.; Yonezu, H.; Wakahara, A.;