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MIYAJI Kousuke

Academic OrganizationAcademic Assembly School of Science and Technology Institute of EngineeringTEL
Education and Research OrganizationFaculty of Engineering Electrical and Computer EngineeringFAX
PositionAssociate ProfessorMail Addresskmiyaji@shinshu-u.ac.jp
Address4-17-1, Wakasato, Nagano City 380-8553Web sitehttp://www.shinshu-u.ac.jp/faculty/engineering/chair/elec024/

Profile

Research Field
Electron device/Electronic equipment
Current Subject
High efficiency power management integrated circuit design
Keywords:Integrated circuit , DC-DC converter , Wireless power transmission , Energy harvesting , 3D integration
Analog sensing system and circuit design using emerging devices
Keywords:Current sensor , Capacitor sensor , Analog circuit design
Academic Societies
Academic Societies
JSAP
IEICE
IEEE SSCS, EDS, CAS, PELS

Committee of Academic Societies
2015-2018 , JSAP , SSDM2015 Program Committee Secretary
2014-2015 , ACM, IEEE, IEICE, IPSJ , ASP-DAC2015 Design Contest Committee
Academic Background
Graduate School
The University of Tokyo , (Department of Electronic Engineering , Graduate school of Engineering) , 2008
The University of Tokyo , (Department of Electronic Engineering , Graduate school of Engineering) , 2005

College
The University of Tokyo , (Faculty of Engineering) , 2003

Degree
Ph.D Eng. , The University of Tokyo
M. Eng. , The University of Tokyo
B. Eng. , The University of Tokyo

Research

Books, Articles, etc.
Books
環境磁界発電-原理と設計法-
科学情報出版株式会社 2016(Mar.)
Author:田代晋久、脇若弘之、佐藤敏郎、曽根原誠、水野勉、卜穎剛、宮地幸祐、中澤達夫、生稲弘明、笠井利幸


Articles
Number of traps and trap depth position on statistical distribution of random telegraph noise in scaled NAND flash memory
Japanese Journal of Applied Physics,55(4S):04EE08 2016(Apr.)
Author:Toshihiro Tomita, Kousuke Miyaji


Substrate Doping Concentration Dependence on Random Telegraph Noise Spatial and Statistical Distribution in 30nm NAND Flash Memory,” Japanese Journal of Applied Physics, vol. 54, no. 4S, p. 04DD02, April 2015.
Japanese Journal of Applied Physics,54(4S):04DD02 2015(Apr.)
Author:Toshihiro Tomita, Kousuke Miyaji


A Temperature tracking read reference current and write voltage generator for multi-level phase change memories
IEICE Transactions on Electronics,E97-C(4):342-350 2014(Apr.)
Author:Koh Johguchi, Toru Egami, Kousuke Miyaji and Ken Takeuchi


Co-design of application software and NAND flash memory in solid-state drive for relational database storage system
Japanese Journal of Applied Physics,53(4S):04EE09 2014(Apr.)
Author:Kousuke Miyaji, Chao Sun, Ayumi Soga, and Ken Takeuchi


Hybrid triple-level-cell /multi-level-cell NAND flash storage array with chip exchangeable method
Japanese Journal of Applied Physics,53(4S):04EE04 2014(Apr.)
Author:Shogo Hachiya, Koh Johguchi, Kousuke Miyaji and Ken Takeuchi


A High Performance and Energy-Efficient Cold Data Eviction Algorithm for 3D-TSV Hybrid ReRAM/MLC NAND SSD
IEEE Transactions on Circuit and Systems I,61(2):382-392 2014(Feb.)
Author:Chao Sun, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi


Control gate length, spacing, channel hole diameter, and stacked layer number design for bit-cost scalable-type three-dimensional stackable NAND flash memory
Japanese Journal of Applied Physics,53(2):024201 2014(Jan.)
Author:Kousuke Miyaji, Yuki Yanagihara, Reo Hirasawa, Sheyang Ning and Ken Takeuchi


A 6T-SRAM With a Post-Process Electron Injection Scheme That Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy
IEEE Journal of Solid-State Circuits,48(9):2239-2249 2013(Sep.)
Author:Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano and Ken Takeuchi


Near Threshold Voltage Word-line Voltage Injection Self-Convergence Scheme for Local Electron Injected Asymmetric Pass Gate Transistor 6T-SRAM
IEEE Trans. Circuit and Systems I,59(8):1635-1643 2012(Aug.)
Author:Kousuke Miyaji Yasuhiro Shinozuka, Shinji Miyano and Ken Takeuchi


Endurance Enhancement and High Speed Set/Reset of 50nm Generation HfO2–based Resistive Random Access Memory (ReRAM) Cell by Intelligent Set/Reset Pulse Shape Optimization and Verify Scheme
Japanese Journal of Applied Physics,51(2):02BD07 2012(Apr.)
Author:Kazuhide Higuchi, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi


Initialize&and Weak-Program Erasing Scheme and Single-Pulse Programming Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive
IEICE Transactions on Electronics,E95-C(4):609-616 2012(Apr.)
Author:Kousuke Miyaji, Ryoji Yajima, Shigeki Sakai, Ken Takeuchi et al.


Analysis of Operation Margin and Read Speed in 6T- and 8T-SRAM with Local Electron Injected Asymmetric Pass Gate Transistor
IEICE Transactions on Electronics,E95-C(4):564-571 2012(Apr.)
Author:Kousuke Miyaji, Kentaro Honda, Shinji Miyano, Ken Takeuchi et al.


Zero Additional Process, Local Charge Trap, Embedded Flash Memory with Drain-side Assisted Erase Scheme Using Minimum Channel Length/Width Standard CMOS Single Transistor Cell
Japanese Journal of Applied Physics,51(4):04DD02 2012(Apr.)
Author:Kousuke Miyaji, Yasuhiro Shinozuka and Ken Takeuchi


Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in sub-20nm Bulk/SOI NAND Flash Memory
Japanese Journal of Applied Physics,51(4):04DD12 2012(Apr.)
Author:Kousuke Miyaji, Chinglin Hung and Ken Takeuchi


Improvement of Read Margin and its Distribution by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor Formed by Post-Process Local Electron Injection
IEEE Journal of Solid-State Circuits,46(9):2180-2188 2011(Sep.)
Author:Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda, Ken Takeuchi et al.


A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD
Solid-State Electronics,58:34-41 2011(Jan.)
Author:Kousuke Miyaji, Shinji Noda, Shigeki Sakai, Ken Takeuchi et al.


A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors
Japanese Journal of Applied Physics,49(12):121501 2010(Dec.)
Author:Shuhei Tanakamaru, Kousuke Miyaji, Shigeki Sakai, Ken Takeuchi et al.


A 1.2V Power Supply, 2.43 Times Power Efficient, Adaptive Charge Pump Circuit with Optimized VTH at Each Pump Stage for Ferroelectric (Fe)-NAND Flash Memories
Japanese Journal of Applied Physics,49(4S):04DD10 2010(Apr.)
Author:Shinji Noda, Kousuke Miyaji, Shigeki Sakai, Ken Takeuchi et al.


Silicon nanowire n-type metal-oxide-semiconductor field-effect transistors and single-electron transistors at room temperature under uniaxial tensile strain
Journal of Applied Physics (JAP),105(8):084514 2009(Jun.)
Author:Jeong YeonJoo, Kousuke Miyaji, Takuya Saraya and Toshiro Hiramoto


Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance-Voltage Method
Japanese Journal of Applied Physics,48(1):011205 2009(Jan.)
Author:Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Toshiro Hiramoto et al.


On the Origin of Negative Differential Conductance in Ultranarrow Wire Channel Silicon Single-Electron and Single-Hole Transistor
Japanese Journal of Applied Physics,47(3):1813-1817 2008(Mar.)
Author:Masaharu Kobayashi, Kousuke Miyaji and Toshiro Hiramoto


Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor
Applied Physics Letters,92(7):073502 2008(Feb.)
Author:Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi and Toshiro Hiramoto


Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature
Applied Physics Letters,91(5):053509 2007(Aug.)
Author:Kousuke Miyaji and Toshiro Hiramoto


Compact Analytical Model for Room-Temperature-Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels
IEEE Transactions on Nanotechnology,5(3):167-173 2006(May)
Author:Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto


Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors
Applied Physics Letters,88(14):143505 2006(Apr.)
Author:Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto


Temperature Dependence of Off-Currentin Bulk and FD SOI MOSFETs
Japanese Journal of Applied Physics,44(4B):2371-2375 2005(Apr.)
Author:Kousuke Miyaji, Masumi Saitoh, Toshiharu Nagumo and Toshiro Hiramoto


Presentations
A 13.56MHz CMOS Active Diode Full-Wave Rectifier Achieving ZVS with Voltage-Time-Conversion Delay-Locked Loop for Wireless Power Transmission
Asia and South Pacific Design Automation Conferenece , :27-28 2017(Jan.)
Author:Keita Yogosawa, Hideki Shinohara, Kousuke Miyaji


A ZVS CMOS Active Diode Rectifier with Voltage-Time-Conversion Delay-Locked Loop for Wireless Power Transmission
IEEE Asian Solid-State Circuits Conference (A-SSCC) , :15-3 2015(Nov.)
Author:Hideki Shinohara, Kousuke Miyaji


Effects of Cell Vth State and Number of Traps on Statistical Distribution of Random Telegraph Noise in Scaled NAND Flash Memory
International Conference on Solid State Devices and Materials (SSDM) , :1188-1189 2015(Sep.)
Author:Toshihiro Tomita, Kousuke Miyaji


Substrate Doping Concentration Dependence on Random Telegraph Noise Spatial and Statistical Distribution in 30nm NAND Flash Memory
International Conference on Solid State Devices and Materials (SSDM) , :462-463 2014(Sep.)
Author:Toshihiro Tomita, Kousuke Miyaji


3D-Integrated Storage Class Memory/NAND Flash Hybrid SSDs for Cloud Data Centers
Non-Volatile Memories Workshop (NVMW) , :Poster 64 2014(Mar.)
Author:Shun Okamoto, Chao Sun, Shogo Hachiya, Koh Johguchi, Kousuke Miyaji, Ken Takeuchi


TLC/MLC NAND Flash Mix-and-Match Design with Exchangeable Storage Array
International Conference on Solid State Devices and Materials (SSDM) , :894-895 2013(Sep.)
Author:Shogo Hachiya, Koh Johguchi, Kousuke Miyaji and Ken Takeuchi


Co-Design of Application Software and NAND Flash Memory for Database Storage System
International Conference on Solid State Devices and Materials (SSDM) , :130-131 2013(Sep.)
Author:Kousuke Miyaji, Chao Sun and Ken Takeuchi


Hybrid ReRAM and MLC NAND SSD Memory System with Data Fragmentation Suppression
Flash Memory Summit 2013(Aug.)
Author:Tomoko Iwasaki, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Chao Sun, Ken Takeuchi


High Performance and Energy-efficient Hybrid ReRAM/MLC NAND Flash SSD with Intelligent Data Management Algorithm
Symposium on Advanced Computing Systems and Infrastructures (SACSIS) , :117-118 2013(Jun.)
Author:Chao Sun, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi and Ken Takeuchi


Write Voltage and Read Reference Current Generator for Multi-Level Ge2Sb2Te5-based Phase Change Memories with Temperature Characteristics Tracking
IEEE International Memory Workshop (IMW) , :104-107 2013(May)
Author:Koh Johguchi, Toru Egami, Kousuke Miyaji and Ken Takeuchi


SCM capacity and NAND over-provisioning requirements for SCM/NAND flash hybrid enterprise SSD
IEEE International Memory Workshop (IMW) , :64-67 2013(May)
Author:Chao Sun, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi


Analysis on Static Noise Margin Improvement in 40nm 6T-SRAM with Post-Process Local Electron Injected Asymmetric Pass Gate Transistor
IEEE International Reliability Physics Symposium (IRPS) , :3B.6.1-3B.6.5 2013(Apr.)
Author:Kousuke Miyaji, Daisuke Kobayashi, Shinji Miyano and Ken Takeuchi


Over 10-times High-speed, Energy Efficient 3D TSV-Integrated Hybrid ReRAM/MLC NAND SSD by Intelligent Data Fragmentation Suppression
Asia and South Pacific Design Automation Conferenece , :81-82 2013(Jan.)
Author:Chao Sun, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Ken Takeuchi


An Integrated Variable Positive/Negative Temperature Coefficient Read Reference Generator for MLC PCM/NAND Hybrid 3D SSD
IEEE Asian Solid-State Circuits Conference (A-SSCC) , :313-316 2012(Nov.)
Author:Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi and Ken Takeuchi


x11 Performance Increase, x6.9 Endurance Enhancement, 93% Energy Reduction of 3D TSV-Integrated Hybrid ReRAM/MLC NAND SSDs by Data Fragmentation Suppression
IEEE Symposium on VLSI Circuits , :134-135 2012(Jun.)
Author:Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi et al.


Control Gate Length, Spacing and Stacked Layer Number Design for 3D-Stackable NAND Flash Memory
IEEE International Memory Workshop (IMW) , :84-87 2012(May)
Author:Yuki Yanagihara, Kousuke Miyaji and Ken Takeuchi


A 6T-SRAM with a Carrier Injection Scheme to Pinpoint and Repair Fails that Achieves 57% Faster Read and 31% Lower Read Energy
IEEE International Solid-State Circuits Conference (ISSCC) , :232-233 2012(Feb.)
Author:Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano and Ken Takeuchi


Pushing Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage from 13nm to 8nm with SOI NAND Flash Memory Cells
International Conference on Solid State Devices and Materials (SSDM) , :128-129 2011(Sep.)
Author:Kousuke Miyaji, Chinglin Hung and Ken Takeuchi


A Zero Additional Process to Standard CMOS, 8F2, Scalable Embedded Flash Memory with Drain-side Assisted Erase Scheme
International Conference on Solid State Devices and Materials (SSDM) , :981-982 2011(Sep.)
Author:Yasuhiro Shinozuka, Kousuke Miyaji and Ken Takeuchi


50nm HfO2 ReRAM with 50-Times Endurance Enhancement by Set/Reset Turnback Pulse&Verify Scheme
International Conference on Solid State Devices and Materials (SSDM) , :1011-1012 2011(Sep.)
Author:Kazuhide Higuchi, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi


Statistical VTH Shift Variation Self-Convergence Scheme Using Near Threshold VWL Injection for Local Electron Injected Asymmetric Pass Gate Transistor SRAM
IEEE Custom Integrated Circuits Conference (CICC) , :T-9 2011(Sep.)
Author:Kousuke Miyaji, Yasuhiro Shinozuka, Shinji Miyano and Ken Takeuchi


Initialize&Weak-Program Erasing Scheme for Elimination of Cell VTH Shift Variation Due to History Effect in Ferroelectric (Fe)-NAND Flash Memories
IEEESilicon Nanoelectronics Workshop , :81-82 2011(Jun.)
Author:Kousuke Miyaji, Ryoji Yajima, Shigeki Sakai, Ken Takeuchi et al.


0.5V Bit-Line-Voltage Self-Boost-Programming in Ferroelectric-NAND Flash Memory
IEEE International Memory Workshop (IMW) , :155-158 2011(May)
Author:Zhang Xizhen, Kousuke Miyaji, Mitsue Takahashi, Ken Takeuchi, and Shigeki Sakai


Elimination of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor
IEEE Custom Integrated Circuits Conference (CICC) , :M-10 2010(Sep.)
Author:Kentaro Honda, Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano and Ken Takeuchi


70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection
IEEE Symposium on VLSI Circuits , :41-42 2010(Jun.)
Author:Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano, Ken Takeuchi et al.


A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD
IEEE International Memory Workshop (IMW) , :42-45 2010(May)
Author:Kousuke Miyaji, Shinji Noda, Shigeki Sakai, Ken Takeuchi et al.


A Ferroelectric NAND Flash Memory for Low-Power and Highly Reliable Enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V Low-Power CPU and SoC
Materials Research Society (MRS) Spring Meeting 2010(Apr.)
Author:Kousuke Miyaji, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi et al.


Advanced NAND Flash Memory Devices and Solid-State Drives
Materials Research Society (MRS) Spring Meeting , :Tutorial G 2010(Apr.)
Author:Kousuke Miyaji, Ken Takeuchi


Experimental Study of Mobility in [110]- and [100]-Directed Multiple Silicon Nanowire GAA MOSFETs on (100) SOI
IEEE Symposium on VLSI Technology , :32-33 2008(Jun.)
Author:Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Toshiro Hiramoto et al.


Experimental Study on Silicon Nanowire nMOSFET and Single-Electron Transistor at Room Temperature under Uniaxial Tensile Strain
IEEE Silicon Nanoelectronics Workshop , :M0930 2008(Jun.)
Author:Yeon Joo Jeong, Kousuke Miyaji and Toshiro Hiramoto


Characteristic Modulation of Silicon MOSFETs and Single Electron Transistors with a Movable Gate Electrode
IEEE Silicon Nanoelectronics Workshop , :S1015 2008(Jun.)
Author:Jong Sin Park, Takuya Saraya, Kousuke Miyaji, Toshiro Hiramoto et Al.


Transport in Silicon Nanowire and Single-Electron Transistor
International Conference on Simulation of Semiconductor Devices and Processes (SISPAD) , :209-215 2007(Sep.)
Author:Toshiro Hiramoto, Kousuke Miyaji, Masaharu Kobayashi


Novel Long-Range-Extension of Coulomb Blockade Region in Room-Temperature Operating Silicon Single-Hole Transistor
IEEE Silicon Nanoelectronics Workshop , :115-116 2007(Jun.)
Author:Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi and Toshiro Hiramoto


Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor
International Conference on Solid State Devices and Materials (SSDM) , :836-837 2006(Sep.)
Author:Kousuke Miyaji and Toshiro Hiramoto


Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors
International Conference on Solid State Devices and Materials (SSDM) , :806-807 2006(Sep.)
Author:Masaharu Kobayashi, Kousuke Miyaji and Toshiro Hiramoto


On the Accuracy of Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels
International Semiconductor Device Research Symposium (ISDRS) , :WP7-07-06 2005(Dec.)
Author:Kousuke Miyaji, Masaharu Kobayashi, Tetsu Ohtou and Toshiro Hiramoto


Large Temperature Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Electron/Single-Hole Transistor
International Semiconductor Device Research Symposium (ISDRS) , :TP3-03 2005(Dec.)
Author:Masaharu Kobayashi, Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto


Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain
International Conference on Solid State Devices and Materials (SSDM) , :166-167 2005(Sep.)
Author:Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto


Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels
IEEE Silicon Nanoelectronics Workshop , :82-83 2005(Jun.)
Author:Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto


Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs
International Conference on Solid State Devices and Materials (SSDM) , :236-237 2004(Sep.)
Author:Kousuke Miyaji, Masumi Saitoh, Toshiharu Nagumo and Toshiro Hiramoto

Research Grants
Joint Research
2015 - 2017 , フィージビリティスタディ パッケージ内蔵パワーインダクタを用いたSSD向け三次元集積統合降圧DC-DCコンバータの研究開発
Research Activities
Journal Editorial Board
2012-2012 , IEICE Transactions on Electronics Special Section on Solid-State Circuit Design - Architecture, Circuit, Device and Design Methodology
2013-2013 , IEICE Transactions on Electronics Special Section on Solid-State Circuit Design - Architecture, Circuit, Device and Design Methodology
2015-2015 , IEICE Transactions on Electronics Special Section on VLSI Design and CAD Algorithms
2015-2016 , IEICE Transactions on Electronics Special Section on Design Methodologies for System on a Chip
2016-2016 , IEICE Transactions on Electronics Special Section on VLSI Design and CAD Algorithms
2016-2017 , IEICE Transactions on Electronics Special Section on Design Methodologies for System on a Chip
2016- , IEICE Transactions on Electronics
2017-2017 , IEICE Transactions on Electronics Special Section on VLSI Design and CAD Algorithms
2017-2018 , IEICE Transactions on Electronics Special Section on Design Methodologies for System on a Chip

Education

Lectures
2017
2017 , Electrical and Electronic Experiments Ⅲ
2017 , Electronic Circuits I
2017 , Fundamentals of Integrated Circuit Design
2016 , Electronic Circuits I
2016 , Electrical and Electronic Experiments Ⅲ
2016 , Fundamentals of Integrated Circuit Design
2016 , Electrical and Electronic Experiments Ⅱ
2016 , CMOS Analog Integrated Circuit Design
2015 , Electrical and Electronic Experiments Ⅲ
2015 , Fundamentals of Integrated Circuit Design
2015 , Electrical and Electronic Experiments Ⅱ
2015 , Circuit Elements